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At least 253 records · Page 14

Fabrication Method for LOBSTER-Eye Optics in <110> Silicon

Soft x-ray optics can use narrow slots to direct x-rays into a desirable pattern on a focal plane. While square-pack, square-pore, slumped optics exist for this purpose, they are costly. Silicon (Si) is being examined as a possible low-cost replacement. A fabrication method was developed for narrow slots in <110> Si demonstrating the feasibility of stacked slot optics to replace micropores. Current micropore optics exist that have 20-micron-square pores on 26-micron pitch in glass with a depth of 1 mm and an extent of several square centimeters. Among several proposals to emulate the square pore optics are stacked slot chips with etched vertical slots. When the slots in the stack are positioned orthogonally to each other, the component will approach the soft x-ray focusing observed in the micropore optics. A specific improvement Si provides is that it can have narrower sidewalls between slots to permit greater throughput of x-rays through the optics. In general, Si can have more variation in slot geometry (width, length). Further, the sidewalls can be coated with high-Z materials to enhance reflection and potentially reduce the surface roughness of the reflecting surface. Narrow, close-packed deep slots in <110> Si have been produced using potassium hydroxide (KOH) etching and a patterned silicon nitride (SiN) mask. The achieved slot geometries have sufficient wall smoothness, as observed through scanning electron microscope (SEM) imaging, to enable evaluation of these slot plates as an optical element for soft x-rays. Etches of different angles to the crystal plane of Si were evaluated to identify a specific range of etch angles that will enable low undercut slots in the Si <110> material. These slots with the narrow sidewalls are demonstrated to several hundred microns in depth, and a technical path to 500-micron deep slots in a precision geometry of narrow, closepacked slots is feasible. Although intrinsic stress in ultrathin wall Si is observed, slots with walls approaching 1.5 microns can be achieved (a significant improvement over the 6-micron walls in micro - pore optics). The major advantages of this technique are the potential for higher x-ray throughout (due to narrow slot walls) and lower cost over the existing slumped micropore glass plates. KOH etching of smooth sidewalls has been demonstrated for many applications, suggesting its feasibility for implementation in x-ray optics. Si cannot be slumped like the micropore optics, so the focusing will be achieved with millimeter-scale slot plates that populate a spherical dome. The possibility for large-scale production exists for Si parts that is more difficult to achieve in micropore parts.

Chervenak, James↗

Hydrophobicity of Cryogenic Fluids for Fuel Transfer in Space Applicaitons

Introduction Hydrophobicity is the tendency of a fluid to repel another material or fluid. Hydrophobiciy can be measured through the wetting angle of the fluid on the surface of the other material. The greater the wetting angle, the more hydrophobic the surface is against the fluid. Hydrophobicity properties can be caused by one of two means, either through physical properties or chemical properties [\citenum{NARBUTT2020121}]. Physical hydrophobicity due to the surface of a solid creating surface roughness/patterning, minimizing the contact area between the fluid and the surface. This can be observed throughout nature, such as the surface of lotus leaves or butterfly wings. This physical property can be induced on a variety of surfaces, namely through laser etching, allowing a surface to be finely lineated to imitate these natural surfaces while controlling quantity, depth, and patterns of the etching on the surface [\citenum{10.1063/1.4905616}]. Physical hydrophobicity is therefore dependent on several variables, including the surface that the fluid is on and properties of the fluid itself, such as density and surface tension, both of which are dependent on temperature and/or pressure. Chemical hydrophobicity [\citenum{MadeiraHydrophobocicicici}] is due to the inherent chemical properties of the materials being used. This is most commonly due to the molecular structures changing the polarity of the materials. Depending on a nonpolar material will repel a polar material, proving to be hydrophobic, conversely if the polarity of the materials is the same (polar – polar, nonpolar – nonpolar), they will attract each other. Cryogenics refers to the behavior of materials at very low temperatures (<\ang{-100} C) [\citenum{ZOHURI20181}]. In space applications many things are inherently cryogenic, therefore this is an important field. There has been little research in how hydrophobicity changes at cryogenic temperatures. Cryogenic fluids are commonly used as fuels for spacecraft, therefore, integrating a hydrophobic surface can increase the transfer rate of the fuel. To test this, several experiments were set up to determine the hydrophobic properties of cryogenic fluids, including nitrogen (LN2), argon (LAr), oxygen (LOx), hydrogen (LH2), and methane (CH4), at cryogenic temperatures. Etched Wafer Testing A silicon wafer cut from a crystal of silicon [100] was used to model the potential hydrophobicity of various cryogenic fluids. Silicon [100] references to the crystallographic orientation of the silicon crystals in the wafer. These wafers were then laser etched to create a surface that is more likely to be hydrophobic. To test the hydrophobicity of the wafers at cryogenic temperatures, the temperatures of the wafers must be reduced to the same temperature as the cryogenic fluid being used to prevent rapid boil-off. To achieve this a double-walled vacuum insulated glass chamber was utilized. The chamber is open, with a double-walled glass that can be placed in a vacuum to remove condensation from the outside to allow easier viewing of the experiment. Furthermore, the silicon wafer's temperature must be lowered to the temperature of LN2, as well as maintain the temperature throughout the experiment. To achieve this a piece of 6061 aluminum was used, creating a stand-off for the wafer and it would allow for the insulation of the temperature of the wafers. The container was then filled with LN2 and once the LN2 stabilized the vaporization and the levels of LN2 dropped under the height of the wafer, the wafer was then allowed to air dry. Once the wafer was dry from the LN2, drops of LN2 were placed on the surface of the wafer for observation. During the first trial, the LN2 that was dropped on the surface displayed nonhydrophobic behaviors, spreading out along the surface, with a minimal wetting angle (too small to be measured). This process was repeated for liquid argon. Further testing with other cryogenic liquids will require different testing apparatuses due to being more volatile. Furthermore, several papers [\citenum{voltvolt7}] have suggested that running a voltage can induce a hydrophobic effect throughout a surface, further testing will include a voltage (constant and oscillating) to determine if voltage influences inducing hydrophobicity at cryogenic temperatures. Chemical Testing Coating the interior walls of the fuel tanks and fuel lines can successfully create a hydrophobic surface. The inherent problem is finding a material that can be used to coat the surface, furthermore, at these temperatures, the coating will remain solid, which could pose issues in maintaining the hydrophobic properties. To test this water (polar) is hydrophobic against oils and fats (nonpolar), therefore the same experiment as the etched wafer testing was conducted to determine if the hydrophobic properties will persist as the nonpolar material remains solid and the polar material remains a fluid. The water remained hydrophobic, allowing testing can expand to the cryogenic fluids. However, another hurdle is faced in finding a chemically opposite material to the cryogenic fluids being tested. As many of the cryogenic fluids being tested are diatomic, they are inherently nonpolar, therefore, the material used for the hydrophobic coating must be polar. Polar greases and lubricants are difficult to come by, however, lithium stearate, appears to be a potential candidate for creating a coated hydrophobic surface for cryogenic fluids at cryogenic temperatures.

Cryogenics↗

Characterization of lunar nitrogen components

Rocks of known and disparate cosmic-ray ages are analyzed to find the spallation production rate of N-15. A soil breccia of known formation age was analyzed for its bearing on the antiquity of the isotopically light component. Further stepwise heating analysis of soils shed further light on occurrences of the components. Lunar soil samples were etched slightly by fluorine, revealing significant differences in isotopic ratios between carbon on grain surfaces and bulk carbon; the surface carbon is not retained during agglutinate formation. Etching revealed that about 25% of the total nitrogen resides on the surface of grains; the nitrogen is isotopically heavy. Etching also revealed about 50% of helium in soils residing below the readily etched outermost 1% of soil grain surfaces.

Becker, R. H.↗

Effect of multiblade slurry saw induced damage on silicon solar cells

A correlation between the optimum etch loss and the depth of damage is established using wafers produced by the Multiblade Slurry (MBS) and the Internal Diameter (ID) saws. The observations are based on the measurement of the performance of solar cells fabricated on these wafers. Sample preparation and test results are described and the following conclusions are made: (1) the amount of silicon removal necessary for optimum solar cell performance coincides with the depth of saw-induced damage; (2) optimization of cell performance is not affected by the method of silicon removal; (3) sawing conditions should be optimized to minimize the extent of saw-induced damage; (4) the MBS saw is found to induce damage to a lesser extent; (5) since the extent of damage in MBS-sawn wafers is in the limit of etch loss required in texture etching, it is possible to achieve optimum improvement in cell performance by merely texture etching the surface of as-sawn wafers.

Daud, T.↗

Method for applying photographic resists to otherwise incompatible substrates

A method for applying photographic resists to otherwise incompatible substrates, such as a baking enamel paint surface, is described wherein the uncured enamel paint surface is coated with a non-curing lacquer which is, in turn, coated with a partially cured lacquer. The non-curing lacquer adheres to the enamel and a photo resist material satisfactorily adheres to the partially cured lacquer. Once normal photo etching techniques are employed the lacquer coats can be easily removed from the enamel leaving the photo etched image. In the case of edge lighted instrument panels, a coat of uncured enamel is placed over the cured enamel followed by the lacquer coats and the photo resists which is exposed and developed. Once the etched uncured enamel is cured, the lacquer coats are removed leaving an etched panel.

Fuhr, W.↗

ESCA study of Kapton exposed to atomic oxygen in low earth orbit or downstream from a radio-frequency oxygen plasma

The ESCA spectra of Kapton polyimide film exposed to atomic oxygen O(3P), either in low earth orbit (LEO) on the STS-8 Space Shuttle or downstream from a radio-frequency oxygen plasma, were compared. The major difference in surface chemistry induced by the two types of exposure to O(3P), both of which caused surface recession (etching), was a much larger uptake of oxygen by Kapton etched in the O2 plasma than in LEO. This difference is attributed to the presence of molecular oxygen in the plasma reactor and its absence in LEO: in the former case, O2 can react with radicals generated in the Kapton molecule as it etches, become incorporated in the etched polymer, and thereby yield a higher steady-state 'surface oxidation' level than in LEO.

Golub, Morton A.↗

Evaluation of Surlyn 8920 as PHE Visor Material and Evaluations of New Adhesives for Improving Bonding Between Teflon and Stainless Steel at Cryogenic Temperature

Two studies are presented, and in the first study, Surlyn 8920 (an ionic and amorphous low density polyethylene made by Dupont) was evaluated as a possible replacement of Plexyglass G as PHE visor material. Four formulations of the polymer were made by adding different amounts of UV stabilizer, energy quencher, and antioxident in a Brabender Plasticorder. The formulated polymers were molded in the form of sheets in a compression molder. Cut samples from the molded sheets were exposed in a weatherometer and tested on Instron Tensile Tester for strength and elongation. Specially molded samples of the formulated polymers were subjected to Charpy Impact Tests. In the second study, preliminary evaluations of adhesives for improvement of bonding between Teflon and stainless steel (SS) were performed. Kapton, a high temperature polyimide made by Dupont, and a rubber based adhesive made by Potter Paint Co., were evaluated against industrial quality epoxy, the current material used to bond Teflon and SS. The degreased surfaces of the SS discs were etched mechanically, with a few of these etched chemically. The surfaces of the SS discs were etched mechanically, with a few of these etched chemically. Bonding strengths were evaluated using lap shear tests on the Instron Tensile Tester for the samples bonded by Kapton and industrial quality epoxy. Bond strengths were also evaluated using a pull test on the Instron for the samples bonded by Potter adhesive (CWL-152) and industrial quality epoxy. Based on limited lap shear data, Kapton gave bond strength favorable compared to that of industrial epoxy. Based on limited pull test data, Kapton bonded and CWL-152 bonded samples showed poor strength compared to epoxy bonded sample.

Ray, Asit K.↗

Advanced silicon on insulator technology

Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

Godbey, D.↗

Electrochemical patterning of amorphous carbon on diamond

The ability to pattern ion-implantation damaged or other nondiamond carbon on a diamond substrate is useful for fabricating a variety of devices. We accomplished such patterning by an unmasked implantation into a diamond substrate followed by photolithography and a selective electrochemical etch. The use of a high resistivity medium coupled with applied biases over 50 V permitted etching without requiring contact between the substrate and an electrode. Many electrolytes gave etches that exhibit high selectivity for nondiamond carbon over both diamond and dielectrics such as photoresist. Optical, electrical, and Raman spectroscopic measurements elucidate the effects of the etch on the implanted diamond surface.

Marchywka, Mike↗

Making Porous Luminescent Regions In Silicon Wafers

Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

Fathauer, Robert W.↗

High quality InP-on-Si for solar cell applications

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

Shellenbarger, Zane A.↗

Development of microchannel plate x-ray optics

The goal of this research program was to develop a novel technique for focusing x-rays based on the optical system of a lobster's eye. A lobster eye employs many closely packed reflecting surfaces arranged within a spherical or cylindrical shell. These optics have two unique properties: they have unlimited fields of view and can be manufactured via replication of identical structures. Because the angular resolution is given by the ratio of the size of the individual optical elements to the focal length, optical elements with size on the order of one hundred microns are required to achieve good angular resolution with a compact telescope. We employed anisotropic etching of single crystal silicon wafers for the fabrication of micron-scale optical elements. This technique, commonly referred to as silicon micromachining, is based on silicon fabrication techniques developed by the microelectronics industry. We have succeeded in producing silicon lenses with a geometry suitable for a 1-d focusing x-ray optics. These lenses have an aspect ratio (40:1) suitable for x-ray reflection and have very good optical surface alignment. We have developed a number of process refinements which improved the quality of the lens geometry and the repeatability of the etch process. In addition to the silicon fabrication, an x-ray beam line was constructed at Columbia for testing the optics. Most recently, we have done several experiments to find the fundamental limits that the anisotropic etch process placed on the etched surface roughness.

Kaaret, Philip↗

Electron and Light Microscopy Techniques Suitable for Studying Fatigue Damage in a Crystallized Glass Ceramic

The crystals of Pyroceram are randomly oriented and highly reflective so that standard microscopy techniques are not satisfactory for studying this material. Standard replicating procedures proved difficult to use. New microscopy techniques and procedures have therefore been developed. A method for locating, orienting, and identifying specific areas to be viewed with an electron microscope is described. This method not require any special equipment. Plastic replicas were found to be unsatisfactory because of their tendency to adhere to Pryoceram. This caused them to tear when released or resulted in artifacts. Preshadowed silicon monoxide replicas were satisfactory but required a releasing agent. A method of depositing the releasing agent is described. To polish specimens without evidence of fire-polishing, it was found necessary to use a vibratory polishing technique. Chrome oxide was used as the abrasive and either water or kerosene as the lubricant. Vibratory polishing is extremely slow, but surfaces so polished show no evidence of fire polishing, even when examined by electron microscopy. The most satisfactory etching process used for Pyroceram 9608 consisted of a primary etch of 5 milliliters of hydrochloric acid (concentrated), 5 milliliters of hydrogen fluoride (45 percent), and 45 milliliters of water, and a secondary etch with methyl alcohol replacing the water. Best results were obtained with total etching times from 25 to 30 seconds. Staining of the Pyroceram surface with a Sanford's marker was found to be an expedient way to reduce the glare of reflected light.

Harrell, Shelley↗

Finite-Element Modeling of 3C-SiC Membranes

Finite-element modeling (FEM) of 3C-SiC thin-film membranes on Si substrates was used to determine the residual stress and center deflection with applied pressure. The anisotropic, three-dimensional model includes the entire 3C-SiC membrane and Si substrate with appropriate material properties and boundary conditions. Residual stress due to the thermal-expansion-coefficient mismatch between the3C-SiC film and Si substrate was included in the model. Both before-and after-etching, residual stresses were calculated. In-plane membrane stress and normal deflection with applied pressure were also calculated. FEM results predict a tensile residual stress fo 259 MPa in the 3C-SiC membrane before etching. This decreases to 247 MPa after etching the substrate below the membrane. The residual stress experimentally measured on sample made at Case Western Reserve University was 280 MPa on post-etched membranes. This is excellent agreement when an additional 30-40 MPa of residual stress to account for lattice mismatch is added to the FEM results.

DeAnna, R. G.↗

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗

Predictive Modeling in Plasma Reactor and Process Design

Research continues toward the improvement and increased understanding of high-density plasma tools. Such reactor systems are lauded for their independent control of ion flux and energy enabling high etch rates with low ion damage and for their improved ion velocity anisotropy resulting from thin collisionless sheaths and low neutral pressures. Still, with the transition to 300 mm processing, achieving etch uniformity and high etch rates concurrently may be a formidable task for such large diameter wafers for which computational modeling can play an important role in successful reactor and process design. The inductively coupled plasma (ICP) reactor is the focus of the present investigation. The present work attempts to understand the fundamental physical phenomena of such systems through computational modeling. Simulations will be presented using both computational fluid dynamics (CFD) techniques and the direct simulation Monte Carlo (DSMC) method for argon and chlorine discharges. ICP reactors generally operate at pressures on the order of 1 to 10 mTorr. At such low pressures, rarefaction can be significant to the degree that the constitutive relations used in typical CFD techniques become invalid and a particle simulation must be employed. This work will assess the extent to which CFD can be applied and evaluate the degree to which accuracy is lost in prediction of the phenomenon of interest; i.e., etch rate. If the CFD approach is found reasonably accurate and bench-marked with DSMC and experimental results, it has the potential to serve as a design tool due to the rapid time relative to DSMC. The continuum CFD simulation solves the governing equations for plasma flow using a finite difference technique with an implicit Gauss-Seidel Line Relaxation method for time marching toward a converged solution. The equation set consists of mass conservation for each species, separate energy equations for the electrons and heavy species, and momentum equations for the gas. The sheath is modeled by imposing the Bohm velocity to the ions near the walls. The DSMC method simulates each constituent of the gas as a separate species which would be analogous in CFD to employing separate species mass, momentum, and energy equations. All particles including electrons are moved and allowed to collide with one another with the stipulation that the electrons remain tied to the ions consistent with the concept of ambipolar diffusion. The velocities of the electrons are allowed to be modified during collisions and are not confined to a Maxwellian distribution. These benefits come at a price in terms of computational time and memory. The DSMC and CFD are made as consistent as possible by using similar chemistry and power deposition models. Although the comparison of CFD and DSMC is interesting, the main goal of this work is the increased understanding of high-density plasma flowfields that can then direct improvements in both techniques. This work is unique in the level of the physical models employed in both the DSMC and CFD for high-density plasma reactor applications. For example, the electrons are simulated in the present DSMC work which has not been done before for low temperature plasma processing problems. In the CFD approach, for the first time, the charged particle transport (discharge physics) has been self-consistently coupled to the gas flow and heat transfer.

Hash, D. B.↗

High-Density Plasma Reactors: Simulations for Design

The development of improved and more efficient plasma reactors is a costly process for the semiconductor industry. Until five years ago, the Industry made most of its advancements through a trial and error approach. More recently, the role of computational modeling in the design process has increased. Both conventional computational fluid dynamics (CFD) techniques like Navier-Stokes solvers as well as particle simulation methods are used to model plasma reactor flowfields. However, since high-density plasma reactors generally operate at low gas pressures on the order of 1 to 10 mTorr, a particle simulation may be necessary because of the failure of CFD techniques to model rarefaction effects. The direct simulation Monte Carlo method is the most widely accepted and employed particle simulation tool and has previously been used to investigate plasma reactor flowfields. A plasma DSMC code is currently under development at NASA Ames Research Center with its foundation as the object-oriented parallel Cornell DSMC code, MONACO. The present investigation is a follow up of a neutral flow investigation of the effects of process parameters as well as reactor design on etch rate and etch rate uniformity. The previous work concentrated on silicon etch of a chlorine flow in a configuration typical of electron cyclotron resonance (ECR) or helical resonator type reactors. The effects of the plasma on the dissociation chemistry were modeled by making assumptions about the electron temperature and number density. The electrons or ions themselves were not simulated.The present work extends these results by simulating the charged species.The electromagnetic fields are calculated such that power deposition is modeled self-consistently. Electron impact reactions are modeled along with mechanisms for charge exchange. An bipolar diffusion assumption is made whereby electrons remain tied to the ions. However, the velocities of tile electrons are allowed to be modified during collisions and are not confined to a Maxwellian distribution. The interaction between the neutral flow and plasma is examined, and results for etch rate uniformity from the previous research and the present plasma simulations are compared.

Hash, David B.↗

Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications

A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.

Hossain, T.↗