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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Atomic oxygen interaction at defect sights in protective coatings on polymers flown on LDEF

Although the Long Duration Exposure Facility (LDEF) has exposed materials with a fixed orientation relative to the ambient low-Earth-orbital environment, arrival of atomic oxygen is angularly distributed as a result of the atomic oxygen's high temperature Maxwellian velocity distribution and the LDEF's orbital inclination. Thus, atomic oxygen entering defects in protective coatings on polymeric surfaces can cause wider undercut cavities than the size of the defect in the protective coating. Because only a small fraction of atomic oxygen reacts upon first impact with most polymeric materials, secondary reactions with lower energy thermally accommodated atomic oxygen can occur. The secondary reactions of scattered and/or thermally accommodated atomic oxygen also contribute to widening the undercut cavity beneath the protective coating defect. As the undercut cavity enlarges, exposing more polymer, the probability of atomic oxygen reacting with underlying polymeric material increases because of multiple opportunities for reaction. Thus, the effective atomic oxygen erosion yield for atoms entering defects increases above that of the unprotected material. Based on the results of analytical modeling and computational modeling, aluminized Kapton multilayer insulation exposed to atomic oxygen on row 9 lost the entire externally exposed layer of polyimide Kapton, yet based on the results of this investigation, the bottom surface aluminum film must have remained in place, but crazed. Atomic oxygen undercutting at defect sites in protective coatings on graphite epoxy composites indicates that between 40 to 100 percent of the atomic oxygen thermally accommodates upon impact, and that the reaction probability of thermally accommodated atomic oxygen may range from 7.7 x 10(exp -6) to 2.1 x 10(exp -3), depending upon the degree of thermal accommodation upon each impact.

Banks, Bruce A.↗
NASA NTRS1984

Oxygen in GaAs - Direct and indirect effects

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Gatos, H. C.↗
NASA NTRS1986

Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs

It is shown that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 sq cm/V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.

Walukiewicz, W.↗
NASA NTRS1999

Effects of natural and synthetic auxins on the gravitropic growth habit of roots in two auxin-resistant mutants of Arabidopsis, axr1 and axr4: evidence for defects in the auxin influx mechanism of axr4

The partially agravitropic growth habit of roots of an auxin-resistant mutant of Arabidopsis thaliana, axr4, was restored by the addition of 30-300 nM 1-naphthaleneacetic acid (NAA) to the growth medium. Neither indole 3-acetic acid (IAA) nor 2,4-dichlorophenoxyacetic acid (2,4-D) showed such an effect. Growth of axr4 roots was resistant to IAA and 2,4-D, but not at all to NAA. The differential effects of the three auxins suggest that the defects of axr4 result from a lower auxin influx into its cells. The partially agravitropic growth habit of axr1 roots, which was less severe than that of axr4 roots, was only slightly affected by the three auxins in the growth medium at concentrations up to 300 nM; growth of axr1 roots was resistant to all three of the auxins. These results suggest that the lesion of axrl mutants is different from that of axr4.

Arabidopsis/drug effects/genetics/growth & develop↗
NASA NTRS1994

UV filters for lighting of plants

The wavelength dependent interaction of biological systems with radiation is commonly described by appropriate action spectra. Particularly effective plant responses are obtained for ultraviolet (UV) radiation. Excess shortwave UV-B radiation will induce genetic defects and plant damage. Besides the ecological discussion of the deleterious effects of the excess UV radiation there is increasing interest in horticultural applications of this spectral region. Several metabolic pathways leading to valuable secondary plant products like colors, odors, taste, or resulting in mechanical strength and vitality are triggered by UV radiation. Thus, in ecologically as well as in economically oriented experiments the exact generation and knowledge of the spectral irradiance, particularly near the UV absorption edge, is essential. The ideal filter 'material' to control the UV absorption edge would be ozone itself. However, due to problems in controlling the toxic and chemically aggressive, instable gas, only rather 'small ozone filters' have been realized so far. In artificial plant lighting conventional solid filter materials such as glass sheets and plastic foils (celluloseacetate or cellulosetriacetate) which can be easily handled have been used to absorb the UV-C and the excess shortwave UV-B radiation of the lamp emissions. Different filter glasses are available which provide absorption properties suitable for gradual changes of the spectral UV-B illumination of artificial lighting. Using a distinct set of lamps and filter glasses an acceptable simulation of the UV-B part of natural global radiation can be achieved. The aging of these and other filter materials under the extreme UV radiation in the lamphouse of a solar simulator is presently unavoidable. This instability can be dealt with only by a precise spectral monitoring and by replacing the filters accordingly. For this reason attempts would be useful to develop real ozone filters which can replace glass filters. In any case chamber experiments require a careful selection of the filter material used and must be accompanied by a continuous UV-B monitoring.

Doehring, T.↗
NASA NTRS1992

An energy analysis of crack-initiation and arrest in epoxy

The objective of this work is to study fracture processes such as crack initiation and arrest in epoxy. A compact tension specimen with displacement-controlled loading is employed to observe multiple crack initiations and arrests. The energy release rate at crack initiation is significantly higher than that at crack arrest, as has been observed elsewhere. In this study, the difference between these energy release rates is found to depend on specimen size (scale effect), and is quantitatively related to the fracture surface morphology. The scale effect, similar to that in strength theory, is conventionally attributed to the statistics of defects which control the fracture process. Triangular shaped ripples, deltoids, are formed on the fracture surface of the epoxy during the slow sub-critical crack growth, prior to the smooth mirrorlike surface characteristic of fast cracks. The deltoids are complimentary on the two crack faces which excludes any inelastic deformation from consideration. The deltoids are analogous to the ripples created on a river surface downstream from a small obstacle. However, in spite of the expectation based on this analogy and the observed scale effect, there are no 'defects' at the apex of the deltoids detectable down to the 0.1 micron level. This suggests that the formation of deltoids during the slow process of subcritical crack growth is an intrinsic feature of the fracture process itself, triggered by inhomogeneity of material on a submicron scale. This inhomogeneity may be related to a fluctuation in the cross-link density of the epoxy.

Chudnovsky, A.↗
NASA NTRS1982

Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings

The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.

Long, D. M.↗
NASA NTRS1999

Visualization of Subsurface Defects in Composites using a Focal Plane Array Infrared Camera

A technique for enhanced defect visualization in composites via transient thermography is presented in this paper. The effort targets automated defect map construction for multiple defects located in the observed area. Experimental data were collected on composite panels of different thickness with square inclusions and flat bottom holes of different depth and orientation. The time evolution of the thermal response and spatial thermal profiles are analyzed. The pattern generated by carbon fibers and the vignetting effect of the focal plane array camera make defect visualization difficult. An improvement of the defect visibility is made by the pulse phase technique and the spatial background treatment. The relationship between a size of a defect and its reconstructed image is analyzed as well. The image processing technique for noise reduction is discussed.

Plotnikov, Yuri A.↗
NASA NTRS1973

Rates and mechanisms of the atomic oxygen reaction with nickel at elevated temperatures

The oxidation of nickel by atomic oxygen at pressure from 1 to 45 N/sq m between 1050 and 1250 K was investigated. In these ranges, the oxidation was found to follow the parobolic rate law, viz., K sub p = 0.0000114 exp(-13410/T) g squared/cm4/sec for films of greater than 1 micron thickness and was pressure independent. The activation enthalpy for the oxidation reaction was 112 + or - 11 kj/mole (27 + or - 3 kcal/mole). Of a number of possible mechanisms and defect structures considered, it was shown that the most likely was a saturated surface defect model for atomic oxidation, based on reaction activation enthalpies, impurity effects, pressure independence, and magnitudes of rates. A model judged somewhat less likely was one having doubly ionized cationic defects rate controlling in both atomic and molecular oxygen. From comparisons of the appropriate processes, the following enthalpy values were derived: enthalpy of activation (Ni diffusion in Ni0) = 110 + or - 30 kj/mole and standard enthalpy change for reaction formation (doubly ionized cation vacancies in Ni0 from atomic oxygen)= -9 + or - 25 kj/mole.

Christian, J. D.↗
NASA NTRS1971

Lithium - An impurity of interest in radiation effects of silicon.

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Naber, J. A.↗
NASA NTRS1974

A study of relationships between performance in system tests and space

Approaches for measuring the effectiveness of tests and test programs are considered, taking into account system test effectiveness, thermal-vacuum test effectiveness, and vibration test effectiveness. Methods for predicting space performance on the basis of system test effectiveness are discussed along with aspects of defect detection in thermal-vacuum tests. Questions regarding the thermal-vacuum test costs in relation to the probability of early space failures are also explored.

Timmins, A. R.↗
NASA NTRS1975

A review of the state-of-the-art of the non-destructive testing of flight pressure vessels

The design of flight vessels is based on a nominal stress requirement and a fracture mechanics approach, and optimization of the weight of the vessel is based on the smallest size defect that can be detected with a high degree of confidence. The wide variety of metals used for fabrication, and the different defects that may be present in them at every stage, up to completion of the vessel, is described. Techniques currently being used for NDT are described along with their advantages, limitations and limits of detectability at high levels of confidence. Techniques considered for use in the future to improve the limits of the minimum flaw size that can currently be detected include the Delta Scan and Acoustic Emission techniques. The construction of space vessels for use in the future has been modified to reduce the presence of critical defects and so to improve the cost effectiveness of projected NDT requirements.

Noronha, P. J.↗
NASA NTRS1985

High Efficiency Large Area Polysilicon Solar Cells

Large area (100 sq cm) polysilicon solar cells having efficiencies of up to 14.1% (100 mW/sq cm, 25 C) were fabricated and a detailed analysis was performed to identify the efficiency loss mechanisms. The 1-5 characteristics of the best cell were dominated by recombination in the quasi-neutral base due to the combination of minority carrier diffusion length and base resistivity. An analysis of the microstructural defects present in the material and their effect on the electrical properties is presented.

Johnson, S. M.↗