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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Extended-magnetohydrodynamics in under-dense plasmas

Extended-magnetohydrodynamics (MHD) transports magnetic flux and electron energy in high-energy-density experiments, but individual transport effects remain unobserved experimentally. Two factors are responsible in defining the transport: electron temperature and electron current. Here, each electron energy transport term has a direct analog in magnetic flux transport. To measure the thermally driven transport of magnetic flux and electron energy, a simple experimental configuration is explored computationally using a laser-heated pre-magnetized under-dense plasma. Changes to the laser heating profile precipitate clear diagnostic signatures from the Nernst, cross-gradient-Nernst, anisotropic conduction, and Righi-Leduc heat-flow. With a wide operating parameter range, this configuration can be used in both small and large scale facilities to benchmark MHD and kinetic transport in collisional/semi-collisional, local/non-local, and magnetized/unmagnetized regimes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing

The diffusion behavior of Mg in Mg/N co-implanted GaN is investigated in response to a set of annealing conditions and methodologies, namely, 1000 °C/30 min thermal anneal, by high-temperature pulsed gyrotron microwave annealing at 1420 or 1500 °C, or by thermal and microwave annealing, sequentially. After 1000 °C annealing, the diffusion of Mg in GaN is found to be negligible, as measured by secondary ion mass spectrometry. Annealing by gyrotron microwave annealing alone induces the diffusion of Mg at a rate on the order of 10 −12 cm 2 /s. However, the use of a thermal anneal before microwave gyrotron annealing reduces this rate by an order of magnitude to 10 −13 cm 2 /s. We find that a model that considers Mg diffusion from an inhomogeneous medium that contains a defect-rich implanted region near-surface to a relatively pristine region below the implant range better explains the observed diffusion behavior than a conventional model that assumes a homogeneous medium. By analyzing the diffusion behavior using the Boltzmann–Matano method, we present a discussion of reduction in [V Ga ] by thermal annealing at 1000 °C, leading to a suppressed diffusion coefficient during subsequent high-temperature annealing relative to diffusion after 1420/1500 °C annealing alone. This effect holds potential for improvement in the precision of selectively doped regions for future applications based on the (Al)GaN material system. An improved field profile control in real devices can increase the breakdown and current-handling capabilities in power electronic applications.

Meyers, V.↗
DOE OSTI2020

Measurements of plasma parameters in the divertor island of Wendelstein 7-X through line-ratio spectroscopy on helium

We report electron temperature T e and density n e have been measured in the divertor island of Wendelstein 7-X by means of a new thermal He-beam system utilizing line-ratio spectroscopy. This system is equipped with a poloidal arrangement of five gas valves that allows to infer 2D plasma profiles T e ( R,Z ) and n e ( R,Z ) across the magnetic island forming the island divertor. A local maximum in T e ( R,Z ) was measured along the flux surfaces located between the island center and the outer separatrix. In the island center, characterized by closed field lines, a clear local minimum in T e was measured, indicating that no direct heat deposition occurs in this region and that the perpendicular heat flux from the core plasma into this domain is small. Increasing the island size leads to a reduction of the connection length in the scrape-off layer (SOL) and to a shift of the island center towards the divertor target. In this scenario, the T e ( R,Z ) are reduced in the entire island domain. Density profiles are found flat across the divertor island for both island size scenarios. These findings are supported by similar observations made with a reciprocating probe plunging through the same SOL island at the mid-plane of W7-X representing the upstream position in this 3D divertor geometry.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Study of detached plasma profile in the divertor simulation experimental module of tandem mirror GAMMA 10/PDX

A divertor simulation experimental module (D-module) in the tandem mirror GAMMA 10/PDX was used for the study of plasma detachment. In previous studies, it was difficult to measure far-upstream plasma parameters in the D-module, and only electrostatic probes on the target plate were used to perform electron temperature and density measurements. Furthermore, to study the detached plasma structure, a Thomson scattering (TS) system and a microwave interferometer system have been installed to measure the inside plasma parameters of the D-module, and a movable electrostatic probe has been placed at the inlet of the D-module to measure the inlet plasma density and temperature. The TS system in the central cell observed the electron temperature and density of the core plasma simultaneously. These measurements revealed the entire density and temperature structure from the core plasma to the divertor plate. The line average electron density measured by the microwave interferometer showed a rollover behavior during detachment. The results indicated that the ionization region was located around the center of the D-module, and it appears to move upstream along the axis.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Two-well injector direct-phonon terahertz quantum cascade lasers

We present an experimental study on a terahertz quantum cascade laser (THz QCL) design that combines both two-well injector and direct-phonon scattering schemes, i.e., a so-called two-well injector direct-phonon design. As a result of the two-well injector direct-phonon scheme presented here, the lasers benefit from both a direct phonon scattering scheme for the lower laser level depopulation and a setback for the doping profile that reduces the overlap of the doped region with active laser states. Additionally, our design also has efficient isolation of the active laser levels from excited and continuum states as indicated by negative differential resistance behavior all the way up to room temperature. This scheme serves as a good platform for improving the temperature performance of THz QCLs as indicated by the encouraging temperature performance results of the device with a relatively high doping level of 7.56 × 10 10 cm −2 and T max ∼ 167 K. With the right optimization of the molecular beam epitaxy growth and interface quality, the injection coupling strength, and the doping density and its profile, the device could potentially reach higher temperatures than the latest records reached for the maximum operating temperature (T max ) of THz QCLs.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Linear ion-scale microstability analysis of high and low-collisionality NSTX discharges and NSTX-U projections

Linear gyrokinetic simulations were conducted to investigate ion-gyroradius-scale micro-instability predictions for high-beta NSTX discharges and NSTX-U projections that span over an order of magnitude variation in collisionality. A complex mix of microtearing modes and hybrid trapped electron modes/kinetic ballooning modes (TEM/KBM) is predicted for all experimental or projected conditions. Ion temperature gradient (ITG) instabilities are typically stable in the NSTX discharges investigated, consistent with the observed neoclassical ion thermal transport. ITG thresholds inferred from the simulations are typically much higher than the experimental NSTX gradients, as well as the projected gradients in the NSTX-U scenario, which assumed ion temperatures limited by neoclassical transport only. The analysis suggests ITG instabilities are unlikely to contribute significant anomalous thermal losses in high-beta, lower collisionality NSTX-U scenarios. On the other hand, the NSTX experimental profiles and NSTX-U projections are predicted to be very close to the predicted onset of unstable KBM at most radii investigated. The proximity of the various discharges to the KBM instability threshold implies it may play an important role in setting profile shapes and limiting global energy confinement. Here, it remains to be understood and predicted how KBM contributes to multi-channel transport (thermal and particle transport, for both ions and electrons) in a way that is consistent with experimental inferences.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultrathin silicon oxide prepared by in-line plasma-assisted N 2 O oxidation (PANO) and the application for n-type polysilicon passivated contact

We develop a plasma-assisted nitrous-oxide (N 2 O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO x ) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO x into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO x on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO x . Champion implied open-circuit voltage (iV oc ) and single-sided recombination saturated current (J 0 ) reach 730 mV and 4.3 fA/cm 2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm 2 (3 × 10 15 cm -3 ) after subsequent AlO x /SiN x hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiO x ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiO x (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρ c ) is typically <10 mΩ cm 2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiO x and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.

14 SOLAR ENERGY↗
DOE OSTI2020

Structure of supported DPPC/cholesterol bilayers studied via X-ray reflectivity

The electron density profile of bilayers of DPPC/cholesterol mixtures supported on semiconductor grade silicon substrates were studied with the objective of determining how the proximity of a solid interface modifies the phase diagram of mixed bilayers. The bilayers were studiedin situimmersed in waterviasynchrotron X-ray reflectivity (XRR). Measurements were performed as a function of temperature through the main phase transition and cholesterol mole fractions up to 40%. Analysis of XRR yields the bilayer thickness, roughness and leaflet asymmetry. We find that the structure of the pure DPPC bilayers in the gel phase is in agreement with previous X-ray measurements of supported bilayers depositedviavesicle fusion and multilamellar vesicles but show more clearly defined features than measurements made on films formed using Langmuir-Blodget Langmuir-Shaffer (LB) deposition. Examination of bilayer thicknessvs.temperature shows that the melting temperature for supported bilayers is shifted upwards by approximately 4 degrees C relative to multilamellar vesicles and that the melting temperature decreases with increasing cholesterol content up to 20%. For pure DPPC bilayers the leaflets melt in two stages with the distal leaflet melting first. For cholesterol concentrations of 10% and 20% there is no clear indication of separate melting. Finally. for 33% and 40% cholesterol content no clear transition is seen in the bilayer thickness, but an abrupt change in roughness indicates possible microdomain formation in the 40% cholesterol sample.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Observation of non-thermal electron formation during the thermal quench of shattered pellet injection shutdowns in DIII-D

Formation of non-thermal (hot) electrons is studied during the thermal quench of shattered pellet injection (SPI) discharge shutdowns in the DIII-D tokamak. Both pure neon and mixed neon/deuterium shutdowns are studied. High-energy radiation (SXR and EUV) brightness levels show indications of non-thermal electron formation during the TQ. The non-thermal densities are of order 10 18 m –3 and non-thermal temperatures are estimated to be of order 10 keV. The non-thermal electrons appear to be mostly lost during the subsequent current quench, as no signal of relativistic runaway electrons is typically seen at the end of the current quench. In conclusion, the non-thermals appear to have an effect on the deposition profile of the SPI pellets, especially at the end of the TQ, due to increased pellet ablation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

In Situ Recrystallization of Co-Evaporated Cu(In,Ga)Se2 Thin Films by Copper Chloride Vapor Treatment towards Solar Cell Applications

Cu(In,Ga)Se2 (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates and a low temperature during the process, a copper chloride vapor treatment was introduced in between the second and third stages to enhance the films properties. X-ray diffraction and scanning electron microscopy demonstrate that drastic changes occur after this recrystallization process, yielding films with much larger grains. Secondary ion mass spectrometry shows that the depth profile of many elements is not modified (such as Cu, In and Se) while others change dramatically (such as Ga and Na). Because of the competing effects of these changes, not all parameters of the solar cells are enhanced, yielding an increase of 15% in the device efficiency at the most.

14 SOLAR ENERGY↗
DOE OSTI2023

MHz free electron laser x-ray diffraction and modeling of pulsed laser heated diamond anvil cell

A new diamond anvil cell experimental approach has been implemented at the European x-ray Free Electron Laser, combining pulsed laser heating with MHz x-ray diffraction. In this report we use this setup to determine liquidus temperatures under extreme conditions, based on the determination of time-resolved crystallization. The focus is on a Fe-Si-O ternary system, relevant for planetary cores. This time-resolved diagnostic is complemented by a finite-element model, reproducing temporal temperature profiles measured experimentally using streaked optical pyrometry. This model calculates the temperature and strain fields by including (i) pressure and temperature dependencies of material properties, and (ii) the heat-induced thermal stress, including feedback effect on material parameter variations. Making our model more realistic, these improvements are critical as they give 7000 K temperature differences compared to previous models. Laser intensities are determined by seeking minimal deviation between measured and modeled temperatures. Combining models and streak optical pyrometry data extends temperature determination below detection limit. The presented approach can be used to infer the liquidus temperature by the appearance of SiO 2 diffraction spots. In addition, temperatures obtained by the model agree with crystallization temperatures reported for Fe–Si alloys. Our model reproduces the planetary relevant experimental conditions, providing temperature, pressure, and volume conditions. Those predictions are then used to determine liquidus temperatures at experimental timescales where chemical migration is limited. This synergy of novel time-resolved experiments and finite-element modeling pushes further the interpretation capabilities in diamond anvil cell experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Impact of collisionality on turbulence in the edge of tokamak plasma using 3D global simulations

Collisionality is one of the key parameters in determining turbulent transport in the plasma edge, regulating phenomena such as 'shoulder formation', separation of scale lengths in the scrape-off layer (SOL), turbulence damping and zonal flow dynamics. Understanding its role is therefore of primary importance for future reactors like ITER. Getting reliable predictions and a better characterization of plasma flow properties when varying collisionality remains, however, a critical challenge for the simulations. This paper focuses on the impact of varying collisionality in a non-isothermal three-dimensional fluid model of the plasma edge. A high field side limited configuration encompassing open and closed magnetic field lines with parameters typical of a medium-sized tokamak is considered. The present model can consistently account for the variations of collisionality and its impact on both the parallel resistivity η ∥ and the ion and electron parallel thermal conductivities χ ∥e,i . Details on mean flow and turbulence properties are given. Changing collisionality leads to significant changes in the flow properties both on the mean and fluctuating quantities. In particular, lowering collisionality decreases the size of coherent structures, the fluctuation levels of turbulence, and steepens the density and temperature equilibrium profiles around the separatrix leading to a global reduction of the turbulent transport. The SOL width is observed to increase with collisionality, eventually resulting in the disappearance of the scale lengths separation between near and far SOL, consistently with previous experimental observations. At low collisionality, where the presence of narrow feature is well-established, a contribution of heat conduction increases up to compete with heat convection.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Development of an Open-source Alloy Selection and Lifetime Assessment Tool for Structural Components in CSP

Lack of sufficient data on high temperature mechanical and corrosion behavior of structural materials is a huge barrier in the technological maturity of current and future Concentrating Solar Power (CSP) technologies. Rapid development and selection of materials cannot be achieved by expensive and time-consuming acquisition of experimental data. The goal of the proposed work is development of an open-source alloy selection and lifetime prediction tool that will integrate validated physics-based models to describe influence of temperature, alloy composition, environment and component geometry (thickness) on mechanical and corrosion behavior of Ni and Fe-based alloys employed in molten salts/sCO 2 heat exchangers. This one-year project leveraged the extensive dataset on the creep\corrosion behavior of candidate materials generated at ORNL through past projects and input from current collaborations with industrial partners. Based on previous experience and the feedback provided by industry (Brayton Energy and Echogen), three candidate materials of interest, Ni-based alloys 740H, 282 and 625 and application-specific operating conditions (max. temperature of 730 °C and stress of 150 MPa) were identified for the heat exchanger. An extensive corrosion and creep dataset was assimilated for the relevant operating conditions and was supported by detailed characterization of about 100 metallographic cross-sections. The corrosion dataset consisted of scanning electron microscopy images (secondary electron and backscatter electron), measured concentration profiles of alloying elements using energy dispersive X-ray spectroscopy (EDS), widths of denuded zones (dissolution of strengthening phases) and depths of attack in molten KCl-MgCl 2 mixtures using image analyses. The creep dataset comprised of creep rupture data and creep strain curves (for 740H and 282). Coupled thermodynamic-kinetic microstructure-based models were employed to predict the stress-corrosion induced compositional and phase evolutions in the alloy during operation under the identified operating conditions. Reduced order models were developed from advanced physics-based models and were integrated in a user-friendly alloy selection tool. The corrosion model was able to predict the time to a critical Cr concentration at the oxide/alloy interface (chemical lifetime) within ±10% (1 standard deviation) of typical statistical variation in corrosion tests and EDS measurement errors (±0.5 wt%). The initial scope of the project was limited to predict creep rupture times (Larson-Miller parameter). Based on the input provided by industry, the mechanical lifetime of the heat exchanger is governed by accumulated creep strains (2%) rather than creep rupture. To be able to predict the times to specific creep strains, a more extensive creep model development was undertaken largely beyond the initial scope of the project. The continuum damage mechanics creep model was able to predict times to 2% creep strain, t 2% with an accuracy of ±500h. Ultimately, a screening protocol for SiC was generated to demonstrate the pathway for integration of one of the currently immature materials from a commercial adoption standpoint in the current material evaluation tool. The modeling tool developed here is accessible to the science community and stakeholders and lays the foundation for methods that will enable a rapid evaluation of optimum materials for CSP applications and reliable prediction of material degradation thereby considerably reducing operational costs, improving reliability and increasing overhaul intervals. However, the complete potential of such a tool to include a wider range of materials and test conditions can only be realized with a more concentrated combined experimental-characterization-computation effort.

14 SOLAR ENERGY↗
DOE OSTI2024

Electron ITB formation in EAST high poloidal beta plasmas under dominant electron heating

Abstract Plasma confinement and transport in tokamaks play a crucial role in the development of high poloidal beta steady-state operation scenarios. Therefore, it is very important to study the relevant mechanism of internal transport barriers (ITBs), which can help plasmas to obtain better confinement in order to achieve higher fusion gain. This paper mainly introduces the analysis of the characteristics of electron heat transport of discharges with ITB in high β P operation regime in Experimental Advanced Superconducting Tokamak (EAST). Based on the statistical analysis of stable discharges with β P > 1.5, it is found that there is an obvious bifurcation of the normalised electron temperature gradient (ETG) ( R / L T e ) in the range of β P = 2–2.2. Then the discharges of lower β P ( β P < 2, where the value of β P is below the bifurcation threshold) and of higher β P ( β P > 2.2, where the value of β P is above the threshold) were selected for analysis. The diagnostic data provided by Thomson scattering, x-ray crystal spectrometry and charge exchange recombination spectroscopy are used to provide reliable parameter profiles and then combined with the data of external magnetic probe measurements and the polarisation interferometer diagnosis system to fully reconstruct the balance. A relevant plasma current calculation model is used to calculate and analyse the current density profiles and power deposition, and then the transport analysis is carried out. Interestingly, in the higher β P discharges, it is found that the turbulence intensity provided by the CO 2 laser collective scattering system gradually decreases and the normalised ETG R / L T e gradually increases. It is also found that the electron heat transport coefficient decreases in the discharge with higher β P and the growth rate of the electron-scale turbulence calculated by transport gyro-Landau fluid (TGLF) is significantly reduced. Meanwhile, similar conclusions are also obtained in the discharges when the β P is further increased.

Wang, Z. H. (ORCID:0009000203431036)↗
DOE OSTI2020

AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier

Semiconductor lasers based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide and an increased electron barrier layer are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Additional use of strained wide-bandgap layers as blocking barriers limiting electron leakage from the active region makes it possible to increase the output power at the same pump current. The developed lasers with a stripe contact 100 μm wide demonstrate at room temperature an output optical power of 4.0 – 4.4 W (pump current 14 A) in a continuous-wave regime and 15 – 17 W (100 A) in a pulsed regime (100 ns, 1 kHz) at wavelengths of 1450 – 1500 nm. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Reliability and Lifetime Prediction Model of Sintered Silver Under High-Temperature Cycling

Although excellent reliability has been reported for sintered silver as a die-attach material under both thermal and power cycling loads in power electronics applications, the promise of this material as a large-area attachment at temperatures beyond 200 degrees C needs to be investigated. This paper presents insights into the thermomechanical behavior and reliability of sintered silver under extreme thermal cycling conditions. In this study, we bonded sintered silver samples and subjected it to a thermal cycling profile of -40 °C to 200 °C with high ramp rates. We periodically monitored samples under thermal cycling to detect the presence of any failure mechanisms using a scanning acoustic microscope. We also included 95Pb5Sn solder in the study to obtain reference data. Results show the occurrence of cracks in sintered silver followed by a rapid rate of crack growth that exceeded the failure criterion in just 50 cycles. The predominant failure mechanism we observed was adhesive failure. As a large-area attachment, solder exhibited a higher reliability than sintered silver but failed within 100 cycles. Finally, we performed thermomechanical modeling to compute strain energy density values and correlated these with the experimentally observed crack growth rates to formulate a lifetime prediction model for sintered silver.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2021

Effect of buffer termination on intermixing and conductivity in LaTiO 3 /SrTiO 3 heterostructures integrated on Si(100)

Here, the control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO 3 (LTO) grown epitaxially on SrTiO 3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO 2 -terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La 1-x Sr x TiO 3 . La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Metalorganic chemical vapor deposition of ZnGeN 2 films on GaN: effects of cation stoichiometry on surface morphology and crystallinity

Novel optoelectronic device designs based on the heterostructures of III-N and II-IV-N 2 are promising to advance device performance significantly. For example, by utilizing InGaN-ZnGeN 2 quantum well (QW) structures instead of pure InGaN, the band structure engineering in the QW active region can lead to improved electron-hole wavefunction overlap, and thus enhance the radiative efficiency for photon generation. These novel heterostructures have great potential to address the current challenge of low quantum efficiency in InGaN QW based light emitting diodes emitting in green and beyond. The materials development of ZnGeN 2 is still at an early stage as compared to the much matured GaN material system. In an ideal octet rule preserving ordered structure of ZnGeN 2 , every N atom is coordinated by exactly two Zn and two Ge atoms. However, local violation of octet rule can be caused by non-ideal coordination of N by the cations. The disordered structure is thermodynamically less favorable but can still be achieved, for example, in kinetics-limited growth regime. The ordered ZnGeN 2 has a bandgap very close to that of GaN (~3.4 eV) and a lattice mismatch of <0.1% with GaN. Interestingly, the valence band of ZnGeN 2 has been predicted to be ~1 eV above that of GaN, which has inspired novel designs for high efficiency light emitters. In this work, we investigated the metalorganic chemical vapor deposition (MOCVD) of ZnGeN 2 films on GaN/c-sapphire templates. Diethylzinc (DEZn), germane (GeH4) and ammonia were used as the precursors for Zn, Ge and N, respectively. A systematic study was conducted to investigate the cation stoichiometry as a function of growth temperature (TG), total reactor pressure (P) and DEZn/GeH 4 molar flow rate ratio (RII/IV). Under the investigated growth window, the Zn/(Zn+Ge) composition in the films, determined from energy dispersive X-ray spectroscopy, decreased monotonically with increase in TG but increased with increase in P and RII/IV. Atom probe tomography data did not indicate the presence of any secondary phases such as Zn 3 N 2 or Ge 3 N 4 . The surface morphology and crystallinity of the grown films had strong correlation with the Zn/(Zn+Ge) composition. The scanning electron microscopy images showed that the near-stoichiometric films have planar surfaces whereas Zn-rich films had crystallites on their surface and the Zn-poor films had faceted surface. Scanning transmission electron microscopy (STEM) imaging revealed that the Zn-rich and Zn-poor films have columnar and filament-like morphology, respectively, whereas the near-stoichiometric films have continuous film-like cross-sectional morphology. TEM nano-diffraction patterns as well as X-ray diffraction 2θ-ω scan profiles indicate that the near stoichiometric films are single crystalline. Nano-diffraction pattern of the stoichiometric films resembled that of a disordered ZnGeN 2 structure. Room temperature Raman spectra of near-stoichiometric films showed only the phonon density of states like features of a cation disordered ZnGeN 2 . Cathodoluminescence and photoluminescence spectra measured at different temperatures had similar features with peak emission wavelength at ~ 2 eV. In conclusion, the stoichiometry of ZnGeN 2 films can be widely tuned by tuning the MOCVD growth parameters. The surface morphology and the crystallinity of the films were found to have strong correlation with the Zn/(Zn+Ge) composition. The stoichiometric ZnGeN 2 films grown on GaN were demonstrated with uniform surface morphology and high crystalline quality. The results from this work will provide pathway to implement ZnGeN 2 in device structures.

Karim, Md Rezaul↗