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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Electronic properties of corundum-like Ir 2 O 3 and Ir 2 O 3 -Ga 2 O 3 alloys

In the hexagonal, corundum-like structure, α-Ga 2 O 3 has a bandgap of ~5.1 eV, which, combined with its relatively small electron effective mass, high Baliga's figure of merit, and high breakdown field, makes it a promising candidate for power electronics. Ga 2 O 3 is easy to dope n-type, but impossible to dope p-type, impeding the realization of some electronic device designs. Developing a lattice-matched p-type material that forms a high-quality heterojunction with n-type Ga 2 O 3 would open new opportunities in electronics and perhaps optoelectronic devices. In this work, we studied Ir 2 O 3 as a candidate for that purpose. Using hybrid density functional theory calculations we predict the electronic band structure of α-Ir 2 O 3 and compare that to α-Ga 2 O 3 , and study the stability and electronic properties of α-(Ir x Ga 1–x ) 2 O 3 alloys. We discuss the band offset between the two materials and compare it with recently available experimental data. We find that the Ir d bands that compose the top of the valence band in α-Ir 2 O 3 are much higher in energy than O p bands in α-Ga 2 O 3 , possibly enabling effective p-type doping. Finally, our results provide an insight into using the Ir 2 O 3 or Ir 2 O 3 -Ga 2 O 3 alloys as p-type material lattice-matched to α-Ga 2 O 3 for the realization of p–n heterojunctions.

36 MATERIALS SCIENCE↗
NASA NTRS2002

Designing Crane Controls with Applied Mechanical and Electrical Safety Features

The use of overhead traveling bridge cranes in many varied applications is common practice. In particular, the use of cranes in the nuclear, military, commercial, aerospace, and other industries can involve safety critical situations. Considerations for Human Injury or Casualty, Loss of Assets, Endangering the Environment, or Economic Reduction must be addressed. Traditionally, in order to achieve additional safety in these applications, mechanical systems have been augmented with a variety of devices. These devices assure that a mechanical component failure shall reduce the risk of a catastrophic loss of the correct and/or safe load carrying capability. ASME NOG-1-1998, (Rules for Construction of Overhead and Gantry Cranes, Top Running Bridge, and Multiple Girder), provides design standards for cranes in safety critical areas. Over and above the minimum safety requirements of todays design standards, users struggle with obtaining a higher degree of reliability through more precise functional specifications while attempting to provide "smart" safety systems. Electrical control systems also may be equipped with protective devices similar to the mechanical design features. Demands for improvement of the cranes "control system" is often recognized, but difficult to quantify for this traditionally "mechanically" oriented market. Finite details for each operation must be examined and understood. As an example, load drift (or small motions) at close tolerances can be unacceptable (and considered critical). To meet these high functional demands encoders and other devices are independently added to control systems to provide motion and velocity feedback to the control drive. This paper will examine the implementation of Programmable Electronic Systems (PES). PES is a term this paper will use to describe any control system utilizing any programmable electronic device such as Programmable Logic Controllers (PLC), or an Adjustable Frequency Drive (AID) 'smart' programmable motion controller. Therefore the use of the term Programmable Electronic Systems (PES) is an encompassing description for a large spectrum of programmable electronic control devices.

Lytle, Bradford P.↗
NASA NTRS2010

NASA Electronic Parts and Packaging (NEPP) Program - Update

This slide presentation reviews the goals and mission of the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. The program has been supporting NASA for over 20 years. The focus is on the reliability aspects of electronic devices. In this work the program also supports the electronics industry. There are several areas that the program is involved in: Memories, systems on a chip (SOCs), data conversion devices, power MOSFETS, power converters, scaled CMOS, capacitors, linear devices, fiber optics, and other electronics such as sensors, cryogenic and SiGe that are used in space systems. Each of these area are reviewed with the work that is being done in reliability and effects of radiation on these technologies.

LaBel, Kenneth A.↗
NASA NTRS1977

Burst simulator for laser-Doppler velocimeter

Device allows for precheck of velocimeter electronics. Device uses voltage-controlled oscillators to generate fundamental frequency and pedestal frequency independently. Magnitude of each signal is adjustable. System allows variable asymmetry in burst signal to point of producing "double-pulse burst."

Youngbluth, O., Jr.↗
NASA NTRS1978

Nuclear electric power sources

Measurements on radioactive commercial p-n junction silicon cells show that these units are capable of delivering several hundred microwatts per curie of Am-241 alpha source, indicating their usefulness in such electronic devices as hearing aids, heart pacemakers, electronic watches, delay timers and nuclear dosimeter chargers. It is concluded that the Am-241 sources are superior to the beta sources used previously, because of higher alpha specific ionization and simultaneous production of low energy photons which are easily converted into photoelectrons for additional power.

Singh, J. J.↗
DOE OSTI2020

Wide Band Gap Chalcogenide Semiconductors

Wide band gap semiconductors are essential for today’s electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In–Ga–Zn–O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (EG > 2 eV) chalcogenide materials—namely, II–VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials—and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. Then, we finally review applications—for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes—that employ wide band gap chalcogenides as either an active or passive layer. Overall, by examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗
DOE OSTI2021

A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

A numerical model that describes the transport of mobile ionic species in metal–insulator–semiconductor (MIS) and photovoltaic (PV) devices subject to temperature and voltage stress is presented. The finite element method (FEM) is used to solve the Nernst–Planck equation while imposing Poisson's equation self-consistently as a restriction for the electrostatic potential. This allows the contribution of the ionic species to the potential to be taken into account. Using a variational formulation eases the implementation of diverse boundary conditions, including the incorporation of segregation kinetics at the device interfaces. Segregation across the dielectric–semiconductor interface is relevant to modeling the electronic device degradation in systems where contamination reaches the semiconductor. The model in closed systems with no-flux boundary conditions is validated first. In the limiting case of low contamination levels with respect to the gate bias, the FEM solution matches analytically derived approximations. Then, the implementation is broadened to include an open boundary at the dielectric–semiconductor interface to account for leakage of ions. The predicted time dependence of the flatband voltage in Na-contaminated MIS test structures agrees well with measurements. This model successfully captures the role of long-range ion transport at concentrations of relevance to electronic and PV device instability and neuromorphic computing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2010

Accelerated Aging System for Prognostics of Power Semiconductor Devices

Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

Celaya, Jose R.↗
DOE OSTI2021

High-performance carbon nanotube electronic ratchets

The rapid advancements in low-power portable/wearable electronic devices require concurrent development of technologies that can provide power without the need for bulky, heavy battery storage. Electronic ratchets, asymmetric transistor-based devices that can convert AC signals or electronic noise into DC power, have been proposed as one solution to this growing need. Here, the recent demonstration of conjugated polymer-based electronic ratchets offers a route toward lightweight, flexible power sources for portable applications. Here we demonstrate the fabrication of the first electronic ratchets where the active channel component consists of semiconducting single-walled carbon nanotubes (s-SWCNTs), which can transform electronic noise or AC signals to a stable DC current with higher output power (up to ca. 14 mW for a chemically doped device) than their polymer-based analogs. We also show that patterning of the dopant profile in the s-SWCNT channel enables reasonable power conversion performance (ca. 3.5 mW) with improved stability relative to homogeneously doped devices. Our findings demonstrate the promise for s-SWCNT electronic ratchets as energy harvesting devices for portable, low-power applications.

ENGINEERING,MATERIALS SCIENCE,NANOSCIENCE AND NANO↗
NASA NTRS2014

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.

Single Event Effects↗
NASA NTRS1996

Transmission Electron Microscope Measures Lattice Parameters

Convergent-beam microdiffraction (CBM) in thermionic-emission transmission electron microscope (TEM) is technique for measuring lattice parameters of nanometer-sized specimens of crystalline materials. Lattice parameters determined by use of CBM accurate to within few parts in thousand. Technique developed especially for use in quantifying lattice parameters, and thus strains, in epitaxial mismatched-crystal-lattice multilayer structures in multiple-quantum-well and other advanced semiconductor electronic devices. Ability to determine strains in indivdual layers contributes to understanding of novel electronic behaviors of devices.

Pike, William T.↗
NASA NTRS1984

Screening Plastic-Encapsulated Solid-State Devices

Suitability of plastic-encapsulated solid-state electronic devices for use in spacecraft discussed. Conclusion of preliminary study was plasticencapsulated parts sufficiently reliable to be considered for use in lowcost equipment used at moderate temperature and low humidity. Useful to engineers as guides to testing or use of plastic encapsulated semiconductors in severe terrestrial environments.

Buldhaupt, L.↗
NASA NTRS2003

Methods and devices based on brillouin selective sideband amplification

Opto-electronic devices and techniques using Brillouin scattering to select a sideband in a modulated optical carrier signal for amplification. Two lasers respectively provide a carrier signal beam and a Brillouin pump beam which are fed into an Brillouin optical medium in opposite directions. The relative frequency separation between the lasers is adjusted to align the frequency of the backscattered Brillouin signal with a desired sideband in the carrier signal to effect a Brillouin gain on the sideband. This effect can be used to implement photonic RF signal mixing and conversion with gain, conversion from phase modulation to amplitude modulation, photonic RF frequency multiplication, optical and RF pulse generation and manipulation, and frequency-locking of lasers.

Yao, X. Steve↗
DOE OSTI2022

Moiré engineering in van der Waals heterostructures

Isolated atomic planes can be assembled into a multilayer van der Waals (vdW) heterostructure in a precisely chosen sequence. These heterostructures feature moiré patterns if the constituent 2D material layers are stacked in an incommensurable way, due to a lattice mismatch or twist. This design-by-stacking has opened up the promising area of moiré engineering, a term that can be understood in two different perspectives, namely, (i) structural—engineering a moiré pattern by introducing twist, relative strain, or defects that affect the commensurability of the layers and (ii) functional—exploiting a moiré pattern to find and tune resulting physical properties of a vdW heterostructure. The latter meaning, referring to the application of a moiré pattern, is seen in the literature in the specific context of the observation of correlated electronic states and unconventional superconductivity in twisted bilayer graphene. The former meaning, referring to the design of the moiré pattern itself, is present in the literature but less commonly discussed or less understood. The underlying link between these two perspectives lies in the deformation field of the moiré superlattice. In this Perspective, we describe a path from designing a moiré pattern to employing the moiré pattern to tune physical properties of a vdW heterostructure. We also discuss the concept of moiré engineering in the context of twistronics, strain engineering, and defect engineering in vdW heterostructures. Although twistronics is always associated with moiré superlattices, strain and defect engineering are often not. Here, in this work, we demonstrate how strain and defect engineering can be understood within the context of moiré engineering. Adopting this perspective, we note that moiré engineering creates a compelling opportunity to design and develop multiscale electronic devices.

2D materials↗
DOE OSTI2024

Reliable operation of Cr 2 O 3 :Mg/ $β$-Ga 2 O 3 p–n heterojunction diodes at 600 °C

Beta gallium oxide (β-Ga 2 O 3 )-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are, thus, promising for applications in power electronic devices and harsh environment sensors. However, the long-term reliability of these ultra-wideband gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p–n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes during extended operation at 600 °C, as well as after 30 repeated cycles between 25 and 550 °C. The calculated pO 2 -temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga 2 O 3 and Cr 2 O 3 should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes show room-temperature on/off ratios >104 at ±5 V and a breakdown voltage (V Br ) of -390 V. The leakage current increases with increasing temperature up to 600 °C, which is attributed to Poole–Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-h thermal soak at 600 °C, both the device turn-on voltage and on-state resistance increase from 1.08 V and 5.34 mΩ cm 2 to 1.59 V and 7.1 mΩ cm 2 , respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr 2 O 3 /Ga 2 O 3 interface as observed from the time-of-flight secondary ion mass spectrometry analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for β-Ga 2 O 3 -based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A generic method for interfacing IEDs using low voltage interfaces to real-time simulators with hardware in the loop

This study presents an interface method (IM) to interconnect real-time simulators (RTSs) without amplifiers for different intelligent electronic devices (IEDs), such as protective relays, smart meters, and other devices. It is a significant topic for the power systems protection community because there are many protection devices with different requirements. These protection devices have pinouts that measure bus voltages/currents and breaker pole states and generate trip/close pulse signals. Most of the emulation test beds with RTSs and HIL need amplifiers to connect IEDs from different product manufacturers because the low-voltage interface levels are not available in some instruction manuals. Additionally, commercial amplifiers have cutoff frequency limitations and have an excessive cost when several IEDs are wired onto test beds. Then, the validation of protection and control systems with RTSs and IEDs in the loop from different vendors without amplifiers results in an unfeasible alternative. In this paper, the IM was based on using an interface box, power source, and RTS to identify IED inputs/outputs. Here, the sequence to recognize IED pinouts and calculate the current/voltage scaling factors is described. The IM was validated satisfactorily with RTS and a protection device (with unknown pinouts) in the loop.

42 ENGINEERING↗