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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Li, S. S.↗
NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗
NASA NTRS1985

Further observations of protons resulting from the decay of neutrons ejected by solar flares

The solar flare of 1984 April 24 produced a large gamma ray fluence with energy 2MeV. The time profile of the interplanetary flux from this flare indicates the presence of decaying solar neutrons. This makes a total of three neutron flares so far observed by this method. The three flares are used to place constraints on the fluence and spectra of neutrons emitted by the Sun.

Evenson, P. A.↗
NASA NTRS1985

A consideration of atomic oxygen interactions with space station

A computer model is developed in order to calculate fluence for a generalized spacecraft in orbital flight based on mass spectrometer and incoherent scatter (MSIS) measurements of ambient density. The calculations are used to identify criteria for the selection of materials for the construction of an LEO Space Station. The model is generalized such that the surfaces for study can be oriented in any direction with respect to: a body coordinate system fixed to the spacecraft (E surfaces); and a solar inertial coordinate system. A parametric study was performed in order to evaluate the effects of altitude, inclination, and solar activity on atomic oxygen fluence. Values are obtained for samples of Mylar, Kevlar, Kapton, Tedlar, Teflon and sulfone, as well as for some ethylene polymers. The range of values for material reactivities is from 360 microns for ram-facing surfaces to 200 microns for solar power surfaces during each cycle of solar activity. The possibility of improving reactivity by employing certain chemical coatings is also discussed.

Leger, L. J.↗
NASA NTRS1983

Secular variations in solar flare proton fluxes

Proton fluences in contemporary solar-flare events (1965-82) are analyzed to obtain values of average flux and characteristic rigidity R0 (MV). Both proton fluences F (E greater than 10MeV) and R0 (in the energy interval 10-30 MeV) values for individual events follow log-normal distribution. Comparison of contemporary average flux and R0 values with long-term averaged values, based on lunar sample data, indicate that the ancient solar-flare proton spectra were harder compared to that observed in contemporary flares. The contemporary and long-term (greater than 10,000 yr) averaged fluxes are similar, although such a comparison may not be meaningful because the contemporary averages suffer from uncertainty due to statistics of a single event. The long-term average data suggests a secular variation in solar-flare activity with enhanced proton fluxes during the last 100,000 years.

Goswami, J. N.↗
NASA NTRS1985

Unmelted meteoritic debris in the Late Pliocene iridium anomaly - Evidence for the ocean impact of a nonchondritic asteroid

Ir-bearing particles have been recovered from two piston cores in the Antarctic Basin in the southeastern Pacific. In core E13-3, the particles closely correspond to the Late Pliocene Ir anomaly and have a fluence of about 100 mg/cm sq. In core E13-4, 120 km to the southwest, the particle fluence is about 4 mg/cm sq. Particles with diameters from 0.5 to 4 mm contain at least 35 percent of the Ir in this horizon. Three types of particles have been identified: (1) vesicular, (2) basaltic, and (3) metal. The vesicular particles appear to be shock-melted debris derived from the oceanic impact of a howarditic asteroid containing a minor metal component. These particles have recrystallized from a melt and impact into the ocean has resulted in the incorporation of Na, K, Cl, and radiogenic Sr from the ocean water target. The basaltic clasts appear to be unmelted fragments of the original asteroid which may have separated from the main body prior to impact. Combined vesicular and basaltic particles are believed to have formed by collisions in the debris cloud. Estimates of the diameter of the projectile range from 100 to 500 m. By many orders of magnitude, this is the most massive achondrite sampled by a single meteorite fall.

Kyte, F. T.↗
NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1985

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗
NASA NTRS1985

Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

Garlick, G. F. J.↗
NASA NTRS1985

Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS1986

The Giotto radio-science experiment

The scientific objectives of the Giotto Radio Science Experiment (GRE) are to determine the columnar electron content of Comet Halley/s ionosphere and the cometary mass fluence from atmospheric drag by using the radio signals from Giotto during the Halley encounter. The radio science data (S and X-band Doppler and range measurements) will be collected at NASA/s deep-space 64 m tracking antenna at Tidbinbilla near Canberra, in Australia. In order to separate the effects of the terrestrial ionosphere and the interplanetary plasma, S-band Doppler measurements will also be taken at Tidbinbilla along the line-of-sight of Japan/s cometary probe Sakigake during the Giotto-Halley Encounter. The measurements of cometary electron content and mass fluence will be inverted to derive the spatial distribution of the electron and mass (dust and gas) density within Halley/s coma. The GRE is the only experiment on Giotto capable of measuring the low-energy (10 eV) electron bulk population of Halley/s ionosphere and the total cometary mass flow impacting upon the spacecraft.

Edenhofer, P.↗
NASA NTRS1985

PIN photodiodes irradiated with 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Reft, C. S.↗
NASA NTRS1986

Protecting spacecraft from atomic oxygen

Findings are reported from Space Shuttle flights STS-3, 4, 5, and 8 regarding the degradation of materials exposed to atomic oxygen in low earth orbit. Atomic oxygen, a strong oxidizing agent, is present in low concentrations at such altitudes, and a spacecraft can sweep up considerable volumes of it at orbital velocities of 5 miles/s, especially if mission lifetimes are measured in years or decades. Material loss has been found to be a function of the fluence (the number of oxygen atoms striking a unit area of surface over a given period); fluence is proportional to atmospheric density, orbital velocity, surface attitude relative to velocity vector, and duration of exposure. Atmospheric density depends first on altitude and second on the phase of the 11-year solar activity cycle. Metals, in the experiments, reacted less than nonmetals. Graphs and a table are included, permitting calculation of how far a surface of various organic materials will recede on a spacecraft in low earth orbit. The limited data base on atomic oxygen interactions with materials, using both Shuttle flight experiments and ground-based facilities must be augmented. Space Station design is imminent, and the understanding of such interactions is critical to the success of that design.

Leger, L. J.↗
NASA NTRS1987

Review of Low Earth Orbital (LEO) flight experiments

The atomic oxygen flux exposure experiments flown on Space Shuttle flights STS-5 and STS-8 are described along with the results of measurements made on hardware returned from the Solar Maximum repair mission (Space Shuttle flight 41-C). In general, these experiments have essentially provided for passive exposure of samples to oxygen fluences of approximately 1 to 3.5 x 10(20) atoms/sq cm. Atmospheric density is used to derive fluence and is dependent on solar activity, which has been on the decline side of the 11-year cycle. Thus, relatively low flight altitudes of less than 300 km were used to acquire these exposures. After exposure, the samples were analyzed using various methods ranging from mass loss to extensive scanning electron microscopy and surface analysis techniques. Results are summarized and implications for the space station are discussed.

Leger, L.↗
NASA NTRS1987

Radiation damage of gallium arsenide production cells

High efficiency liquid phase epitaxy (LPE) gallium arsenide cells were irradiated with 1 Mev electrons up to fluences of 1 times 10 to the 16th power cm-2. Measurements of spectral response and dark and illuminated I-V data were made at each fluence and then, using computer codes, the experimental data was fitted to gallium arsenide cell models. In this way it was possible to determine the extent of the damage, and hence damage coefficients in both the emitter and base of the cell.

Mardesich, N.↗
NASA NTRS1985

Performance of GaAs and silicon concentrator cells under 1 MeV electron irradiation

Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 1 MeV electrons at fluences up to 1 x 10 to the 15th electrons per square cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentrations were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4 mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS1987

Performance of GaAs and silicon concentrator cells under 37 MeV proton irradiation

Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 37 MeV protons at fluences up to 2.8 x 10 to the 12th protons/sq cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150 x AMO. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short circuit current and irradiance. The cells are 5 x 5 mm with a 4-mm diameter illuminated area.

Curtis, Henry B.↗
NASA NTRS1987

Radiation damage of gallium arsenide production cells

High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

Mardesich, N.↗