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Thin films of LaF3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively hysteresis-free and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.
Multiple commutation paths exist for switching devices in a three-level active neutral point clamped (3L-ANPC) inverter operation based on the selected switching state and current direction. In addition, the capacitive coupling path of the nonswitching device is a key design aspect for enabling high voltage and high current operation of gallium nitride (GaN) switches in 3L-ANPC topology. A comprehensive study of the switching transient events of inner, outer, and clamping devices of 3L-ANPC is presented in this article. The commutation mechanisms for worst-case transient voltage overshoots (TVOs) are identified. A simplified equivalent circuit model is presented to determine the design criteria for the power layout structure's parasitic inductances. A power layout strategy satisfying the design criteria is then proposed using an insulated metal substrate power printed circuit board (PCB) to enable efficient high-power operation. The proposed design minimizes the commutation and capacitive coupling path inductances to 6 nH and 11.5 nH, respectively. This enables the fast switching operation of GaN HEMTs at 800 V dc, 36 A with a low TVO of 31% verified through experimental three-level double pulse test results. Experimental evaluation of a three-phase 3L-ANPC hardware prototype based on the proposed power layout shows 99% efficiency at 800 V, 9.5 kVA and 50 kHz switching frequency. The proposed design achieves a low case-to-ambient thermal resistance of 2.3 °C/W.
The self-magnetic pinch (SMP) diode is a type of radiographic diode used to generate an intense electron beam for radiographic applications. At Sandia National Laboratories, SMP was the diode load for the six-cavity radiographic integrated test stand inductive voltage adder (IVA) driver operated in a magnetically insulated transmission line (MITL). The MITL contributes a flow current in addition to the current generated within the diode itself. Extensive experiments with a MITL of 40Ω load impedance [T. J. Renk et al., Phys. Plasmas 29, 023105 (2022)] indicate that the additional flow current leads to results similar to what might be expected from a conventional high-voltage interface driver, where flow current is not present. However, when the MITL flow impedance was increased to 80 Ω, qualitatively different diode behavior was observed. This includes large retrapping waves suggestive of an initial coupling to low impedance as well as diode current decreasing with time even as the total current does not. A key observation is that the driver generates total current (flow + diode) consistent with the flow impedance of the MITL used. The case is made in this paper that the 80Ω MITL experiments detailed here can only be understood when the IVA-MITL-SMP diode is considered as a total system. Additionally, the constraint of fixed total current plus the relatively high flow impedance limits the ability of the diode (whether SMP or other type) to act as an independent load. An unexpected new result is that in tracking the behavior of the electron strike angle on the converter as a function of time, we observed that the conventional cIV x “Radiographic” radiation scaling (where x~2.2) begins to break down for voltages above 8 MV, and cubic scaling is required to recover accurate angle tracking.
Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.
Next generation gas turbine engine health monitoring for high performance jet engine-powered aircraft will incorporate integrated microelectronic sensors specifically designed to enhance aircraft functionality, engine efficiency, and safety. Temperature, air flow and pressure associated with the gas path as well as emissions from the engine correlate to the state of the combustor and other engine health conditions. Monitoring these parameters accurately requires positioning electronic sensors in the hot zone of the gas turbine engine, which exposes them to temperatures in excess of 400ºC. At these temperatures, signal amplification is needed at the transducer level to distinguish the desired measured signal from the significant electronic noise generated by the harsh environment. In this presentation, we report on the simulation, development, fabrication, and testing on a high temperature Class-A amplifier which utilizes a 4H-SiC Static Induction Transistor (SIT) as the active device and input/output matching and DC bias networks comprised of thin-film spiral inductors, metal-insulator-metal capacitors, and thick film chip resistors. A small signal model that emulates the operation of the 4H-SiC SIT from 25 to 400ºC, with an emphasis on operation at 400οC, was utilized. Measurements were performed from 25 to 400ºC to generate current-voltage curves, capacitive transistor characteristics and high frequency scattering parameters (S-parameters). The measured data was used to extrapolate the transconductance, gm, as a function of temperature for model development. Circuit simulation tools were used to generate S-parameters, which were compared to the measured values. At 400οC, a maximum difference between measured and simulated S-parameters for frequencies from 20 to 100 MHz were 3.84%, 0.68%, 10.61%, and 3.26% for S21, S12, S11, and S22, respectively. The average transit frequency, ft, was calculated from measured values to be 197.8 MHz, while the simulated value from the model was found to be 200 MHz. The Amplifier’s S-parameters were recorded at 20-100 MHz over a temperature range of 25-400ºC and show a gain of approximately 15.8 and 5.80 dBm at 25 and 400ºC, respectively. The input and output reflection coefficients at 50 MHz and 400ºC were -18.5 and -15.2 dB, respectively. The noise figure and phase noise were measured over the temperature range of 25-400ºC and recorded. The noise figure increased 21% at 50 MHz over the temperature range, while the 1 kHz offset of the phase noise remained below -110 dB. The stability factor, K, calculated with measured and simulated data demonstrates unconditional stability over the frequency range at 400ºC. Lastly, the 1-dB compression point was measured at 50 MHz and 400ºC with an approximated output of 9.5 dBm.
The short-circuit currents and photo-emfs were measured for various ceramics including barium titanate, lead metaniobate, and lead titanate. It is suggested that the emfs and currents arise from the presence of photoconductor-insulator sandwiches in the presence of space-charge-produced internal fields. Results are in agreement with the proposed theory and indicate that the ferroelectric ceramics are not only producers of high-voltage photoelectricity but a photo-battery, the polarity and magnitude of which can be switched by application of an electrical signal.
The satellite surface potential monitor (SSPM) has been developed for the P78-2 SCATHA (Spacecraft Charging At The High Altitudes) satellite to determine the response of selected spacecraft materials to charged-particle environmental fluxes. Since the monitor infers total surface voltages from a single point on the interior side of insulators, a ground simulation program was undertaken to develop analytical techniques to model the monitors and to obtain an experimental calibration of the relationship between the flight measurement techniques and actual measurements. The experimental testing was conducted using monoenergetic electron beams irradiating samples in the dark. An analytical computer model was developed in the NASCAP (NASA Charging Analyzer Program) code. The analytical model material properties for Kapton that controlled backscatter and secondary yield were adjusted to obtain a single set of values that produced reasonable fits for both voltages and currents. The analytical techniques developed in the ground technology investigation have been applied to space flight conditions. Predictions were compared with limited flight data. The agreement is very good indicating that the technique, and NASCAP, can be used to predict spacecraft material charging behavior. Details of the testing, the analytical modelling technique and flight data comparisons are presented.
High voltage power systems in space will interact with the space plasma in a variety of ways. One of these, snapover, is characterized by sudden enlargement of the current collection area across normally insulating surfaces generating enhanced electron current collection. Power drain on solar array power systems results from this enhanced current collection. Optical observations of the snapover phenomena in the laboratory indicates a functional relation between glow area and bia potential as a consequence of the fold/cusp bifurcation in chaos theory. Successful characterizations of snapover as a chaotic phenomena may provide a means of snapover prevention and control through chaotic synchronization.
Two polymeric coatings have been developed for the Propulsive Small Expendable Deployer System (ProSEDS) mission. ProSEDS is designed to provide an on-orbit demonstration of the electrodynamic propulsion capabilities of tethers in space. The ProSEDS experiment will be a secondary payload on a Delta II unmanned expendable booster scheduled for launch in August 2000. A 5-km conductive tether is attached to the Delta 11 second stage and collects current from the low Earth orbit (LEO) plasma to facilitate de-orbit of the spent stage. The conductive tether is attached to a 10-km non-conductive tether, the other end of which is attached to an endmass containing several scientific instruments. A bare metal tether would have the best conductivity but thermal concerns preclude this design. A conductive polymer developed by Triton Systems has been optimized for conductivity and thermo-optical properties. The current design for the ProSEDS conductive tether is seven strands of 28 AWG aluminum wire individually coated with 8.7 micrometers (0.35 mil) of an atomic oxygen-resistant conductive polymer composed of a mixture of 87% Clear Oxygen-Resistant polymer (COR) and 13% polyanaline (PANi), wrapped around a braided Kevlar (TM) 49 core. Extensive testing has been performed at the Marshall Space Flight Center (MSFC) to qualify this material for flight on ProSEDS. Atomic oxygen exposure was performed, with solar absorptance and infrared emittance measured before and after exposure. Conductivity was measured before and after atomic oxygen exposure. High voltage tests, up to 1500 V, of the current collecting ability of the COR/PANi have been completed. Approximately 160 meters of the conductive tether closest to the Delta 11 second stage is insulated to prevent any electron reconnection to the tether from the plasma contactor. The insulation is composed of polyimide overcoated with TOR-BP, another polymeric coating developed by Triton for this mission. TOR-BP acts as both insulator and a protective coating against atomic oxygen erosion. The insulation has been tested to withstand 5000 V.
A high-voltage self-aligning push to mate electrical interconnect device is provided. The electrical interconnect device includes a housing with a mating end and a receiving end. The interconnect also includes an insulator bushing configured to be affixed to the receiving end of the housing. The interconnect also includes a center pin disposed within the housing. The center pin extends from the mating end of the housing to the receiving end of the housing. The interconnect also includes a connector socket disposed within the insulator bushing and which is in electrical communication with the center pin. The interconnect also includes an alignment sleeve including a chamfered mating funnel defining a void configured to accept and surround the housing and at least a portion of insulator bushing.
Abstract Dielectric breakdown strength is one of the critical performance metrics for pure gases and gas mixtures used in large, high pressure gas time projection chambers. In this paper we experimentally study dielectric breakdown strengths of several important time projection chamber working gases and gas-phase insulators over the pressure range 100 mbar to 10 bar, and gap sizes ranging from 0.1 to 10 mm. Gases characterized include argon, xenon, CO $$_2$$ 2 , CF $$_4$$ 4 , and mixtures 90-10 argon-CH $$_4$$ 4 , 90-10 argon-CO $$_2$$ 2 and 99-1 argon-CF $$_4$$ 4 . We develop a theoretical model for high voltage breakdown based on microphysical simulations that use electron swarm Monte Carlo results as input to Townsend- and Meek-like discharge criteria. This model is shown to be highly predictive at high pressure, out-performing traditional Paschen–Townsend and Meek–Raether models significantly. At lower pressure-times-distance, the Townsend-like model is an excellent description for noble gases whereas the Meek-like model provides a highly accurate prediction for insulating gases.
We investigate the behavior of the metal-insulator transition (MIT) in TiS 3 nanowire field-effect transistors, in the strongly nonequilibrium limit that has, thus far, largely been neglected. Under high electric fields within the TiS 3 channel (≤115 kV/cm), we observe the emergence of a critical fixed point, separating insulating and metallic regions in the transfer curves of the device. The critical gate voltage that defines this fixed point evolves systematically with the drain bias (field), allowing us to map out a phase diagram that identifies the conditions for metallicity or for insulating behavior. Dependent upon the choice of the gate voltage used to tune the carrier concentration in the nanowire, the existence of the field-induced MIT allows the TiS 3 to be either insulating or metallic over an extensive range of temperature. The possible connection of this strongly nonequilibrium state to some form of charge density wave is discussed.
An auxiliary payload package called PIX (plasma interaction experiment) was launched on March 5, 1978, on the LANDSAT 3 launch vehicle to study interactions between the space charged-particle environment and surfaces at high applied positive and negative voltages. Three experimental surfaces were used in this package: a plain disk to act as a control, a disk on a Kapton sheet to determine the effect of surrounding insulation on current collection, and a small solar-array segment to evaluate the effect of distributing biased surfaces among an array of insulators. Only half of the results from the 4 hours of PIX operations were recovered. The results did verify effects found in ground simulation testing. The results of this experiment are discussed in detail.
The behavior of a defect in the insulation of a short biased section of cable in a Low Earth Orbit (LEO) space environment was examined. Such studies are of the utmost importance for large space power systems where great quantities of cabling will be deployed. An insulated probe containing a pinhole was placed into a hypothetical high speed LEO plasma. The NASA Charging Analyzer Program (NASCAP/LEO) was used to explore sheath growth about the probe as a function of applied voltage and to predict I-V behavior. A set of independent current calculations using Langmuir's formulations for concentric spheres and coaxial cylinders were also performed. The case of concentric spheres was here extended to include the case of concentric hemispheres. Several simple Langmuir-type models were then constructed to bracket the current collected by the cable. The space-charge sheath radius and impact parameters were used to determine the proper current regime. I-V curves were plotted for the models and comparisons were made with NASCAP/LEO results. Finally, NASCAP/LEO potential contours and surface cell potential plots were examined to explain interesting features in the NASCAP/LEO I-V curve.
Abstract All‐solid‐state lithium‐metal batteries (ASSLMBs) are promising for transportation electrification due to their superior safety and high energy density. Lithium halide electrolytes provide excellent processing flexibility, high ionic conductivity, and anodic stability (>4.1 V), making them highly compatible with high‐voltage cathodes, surpassing sulfide electrolytes (<2.1 V). Nevertheless, halide electrolytes suffer from low cathodic stability and form an electronically conductive interphase with lithium, resulting in a critical current density (CCD) of nearly zero. Herein, Li 3 YbCl 6 electrolytes are synthesized that are kinetically stable with lithium by forming an electronic insulating solid electrolyte interphase. Guided by critical overpotential criteria, a PI 3 interlayer is designed that transforms into Li 6 PI 3 upon contact with lithium, substantially reducing the interfacial resistance of Li 3 YbCl 6 against lithium to 34 Ω and achieving a high critical overpotential of 114 mV. By substituting Yb with Lu, Li 3 LuCl 6 electrolytes with Li 6 PI 3 interlayers reach a CCD of 1.0 mA cm −2 at a capacity of 1.0 mAh cm −2 , comparable to sulfide electrolytes but with higher oxidation stability. Additionally, Li 6 PI 3 enables stable cycling of Li//Li cells with Li 3 LuCl 6 electrolytes at 0.5 mA cm −2 for 400 cycles and maintains 86.5% capacity in Li//LiCoO 2 cells after 220 cycles at 30 °C, paving the way for high‐performance ASSLMBs.
Heat-flux gauges of proposed type put out relatively large signal voltages. Thermocouples in N top-surface/bottom-surface pairs connected in series put out N times voltage of conventional (N=1) pair on insulating layer of same thickness at same heat flux. Useful in such applications as engine instrumentation and radiation-measuring equipment.
An active radiator tile (ART) thermal valve has been fabricated using silicon micromachining. Intended for orbital satellite heat control applications, the operational principal of the ART is to control heat flow between two thermally isolated surfaces by bring the surfaces into intimate mechanical contact using electrostatic actuation. Prototype devices have been tested in a vacuum and demonstrate thermal actuation voltages as low as 40 volts, very good thermal insulation in the OFF state, and a large increase in radiative heat flow in the ON state. Thin, anodized aluminum was developed as a coating for high infrared emissivity and high solar reflectance.
High voltage power systems in space will interact with the space plasma in a variety of ways. One of these, Snapover, is characterized by a sudden enlargement of the electron current collection area across normally insulating surfaces. A power drain on solar array power systems will results from this enhanced current collection. Optical observations of the snapover phenomena in the laboratory indicates a functional relation between bia potential and surface glow area. This paper shall explore the potential benefits of modeling the relation between current and bia potential as an aspect of bifurcation analysis in chaos theory. Successful characterizations of snapover as a chaotic phenomena may provide a means of snapover prevention and control through chaotic synchronization.