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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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249 records · Page 14

All sources NASA NTRS DOE OSTI

NASA NTRS2015

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micros to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

Wright, Kenneth H., Jr.↗

NASA NTRS2015

CarbAl Heat Transfer Material

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Fink, Richard↗

NASA NTRS2016

Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk BiCMOS/DMOS technology. Since we do not know the number of overlayers used in the fabrication processes, linear energy transfer calculations are determined based on the top-surface incident ion species and kinetic energy.

Power MOSFET↗

NASA NTRS2017

Coilgun Acceleration Model Containing Interactions Between Multiple Coils

Electromagnetic (EM) accelerators have the potential to fill a performance range not currently being met by conventional chemical and electric propulsion systems by providing a specific impulse of 600-1000 seconds and a thrust-to-power ratio greater than 200 mN/kW. A propulsion system based on EM acceleration of small projectiles has the traditional advantages of using a pulsed system, including precise control over a range of thrust and power levels as well as rapid response and repetition rates. Furthermore, EM accelerators have lower power requirements than conventional electric propulsion systems since no plasma creation is necessary. A coilgun is a specific type of EM device where a high-current pulse through a coil of wire interacts with a conductive projectile via an induced magnetic field to accelerate the projectile. There are no physical or electrical connections to the projectile, which leads to less system degradation and a longer life expectancy. Multi-staging a coilgun by adding multiple turns on a single coil or on the projectile increases the inductance, thus permitting acceleration of the projectile to higher velocities. Previously, a simplified problem of modeling an inductively-coupled, single-coil coilgun using a circuit-based analysis coupled to the one-dimensional momentum equation through Lenz's law was solved; however, the analysis was only conducted on uncoupled coils. The problem is significantly more complicated when multiple, independently-powered coils simultaneously operate and interact with each other and the projectile through induced magnetic fields. This paper presents a multi-coil model developed with the magnetostatic finite element solver QuickField. In the model, mutual inductance values between pairs of conductors were found by first computing the magnetic field energy for different cases where individual coils or multiple coils carry current, then integrating over the entire finite element domain for each case, and finally using the definition of inductive energy storage to solve for the self and mutual inductance. The electric circuit model is coupled to the projectile through Lenz's law, with the coils coupled through mutual inductance but able to be independently triggered at different times to optimize the acceleration profile. This initial model to predict the behavior of a projectile's acceleration through a coupled, multi-coil coilgun increases the potential of building a highly efficient coilgun thruster with key advantages over other EM thruster systems, thus making it a promising candidate for satellite main propulsion or attitude control thrusters.

Liu, Connie↗

NASA NTRS2019

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Semiconductors↗

NASA NTRS2016

Laser-Induced Fluorescence Measurements of Energetic Ions in a 100-A LaB6 Hollow Cathode

Increasingly long-duration space missions require a better understanding of the failure mechanisms of hollow cathodes to enable prediction of lifetime. Energetic ions have been measured in the plume of hollow cathodes but the energies are higher than can be explained classically. One of the mechanisms that appears to be contributing to the ion heating is ion acoustic turbulence (IAT), which has been investigated with plasma probes recently at JPL. In this work the ion velocity distribution has been measured using laser-induced fluorescence (LIF) at several high-current operating conditions on the centerline of a 100 A class hollow cathode at JPL. A retarding potential analyzer was (RPA) was used to measure the ion energy profile in the far plume and a Langmuir probe was used to measure electron temperature and plasma potential fluctuations. RPA energies are shown to correlate with the values measured by LIF. The ion temperature is shown to increase with distance downstream of the cathode. A parametric study of the ion heating as a function of discharge current and cathode flow rate was performed. It was found that for increasing current the ion temperature evolution did not vary even though the wave IAT wave energy increased. The effect of flow rate was more pronounced, with higher values reducing both ion temperature and wave energy linearly. These results indicate that IAT is at least partially responsible for energetic ion production in the hollow cathode plume.

Dodson, Christopher A.↗

NASA NTRS2017

High Current Lanthanum Hexaboride Hollow Cathode for 20-200 kW Hall Thrusters

The demand for higher power Hall and ion thrusters continues for providing high thrust and long life for deep space mission. The X3 nested Hall thruster is capable of power levels in the 20 to 200-kW range, and is being developed by the University of Michigan and Aerojet for future cargo and manned-missions. The cathode for this thruster is required to produce discharge currents of 50 to 350 A with lifetimes in excess of 10 khrs. A high-current lanthanum hexaboride (LaB6) hollow cathode was previously developed at JPL for these applications, and was successfully operated at over 250 A of discharge current. An updated version of this cathode has been designed, built and tested at JPL, and then used to run the X3 nested Hall thruster at currents of up to 250 A. The new version is designed to reduced orifice plate overheating at high currents, and is capable of injecting auxiliary gas directly into the near-cathode plume from two locations to minimize energetic ion generation at high current. The cathode is predicted to be capable of producing over 350 A of discharge current, and has been tested to date at JPL at steady-state discharge currents from 25 A to 300 A.

Goebel, Dan M.↗

NASA NTRS2006

Effects of an internally-mounted cathode on hall thruster plume properties

The effects of cathode position on the plume properties of an 8 kW BHT-8000 Busek Hall thruster are discussed. Experiments were conducted at the Jet Propulsion Laboratory (JPL) in a vacuum chamber suitable for the development and qualification of high-power Hall thrusters. Multi-mode Hall thruster operation was demonstrated at operating conditions ranging from 200-500 V discharge voltage, 10-40 A discharge current, and 2-8 kW discharge power. Reductions in plume divergence and increased near-field plume symmetries were found to result from the use of an internally-mounted cathode instead of the traditional externally-mounted configuration. High-current hollow cathodes developed at JPL utilizing lanthanum hexaboride (LaB6) emitters were also demonstrated. Discharge currents up to 100 A were achieved with the cathode operating alone and up to 40 A during operation with the Hall thruster. LaB6 cathodes were investigated because of their potential to reduce overall system cost and risk due to less stringent xenon purity and handling requirements.

Fitzgerald, Dennis J.↗

NASA NTRS2021

Screening and Qualification of BME Feedthrough Capacitors for a Space Project

Surface mount technology feedthrough ceramic capacitors are gaining popularity in Hi-Rel systems due to small size and great filtering characteristics. In this work, BME feedthrough capacitors compliant with AEC-Q200 requirements have been evaluated, screened and qualified for a space project. Evaluation included analysis of the effect of post-soldering thermal shocks, temperature dependencies of leakage currents, distribution of breakdown voltages, assessments of high-current capability, and thermal resistance of the parts. The parts have been screened and qualified at conditions close to the military requirements for ceramic capacitors. No failures were detected during screening including burning-in, but two samples failed during monitored 2000 hour life testing at 125C and two times rated voltage. Failure analysis revealed manufacturing defects that required additional analysis of screening and qualification test conditions. Highly accelerated life testing (HALT) has been carried out to assess reliability acceleration factors and the probability of failure at the use conditions. An approach to selection of adequate burning-in and life test conditions is discussed.

Alexander Teverovsky↗

NASA NTRS2021

Screening and Qualification of BME Feedthrough Capacitors for a Space Project

Alexander Teverovsky↗

NASA NTRSDate not supplied

DC Performance Testing of MgB2 Superconducting Straight Wire Samples

To enable turboelectric aircraft that utilize fully superconducting motors and generators, testing of high-current, low-AC-loss superconducting wires and coils must be performed. A preliminary investigation was conducted on the critical current capabilityof a magnesium diboride sample and on the complications that arise from testing the sample with a cryocooler. While a cryocooler provides the benefit of a wide and continuous operating temperature range, cooling a sample by conduction through solid media without a heat-exchange gas is difficult. This paper outlines the hardware and software used to conduct the first DC performance tests on magnesium diboride superconducting samples, along with several check-out tests and mitigation steps needed to produce quality superconducting data using a cryocooler rather than a cryogen

Superconductor↗

DOE OSTI2020

Interdigitated power connector

An electrical connector carries large amounts of electrical current between two circuit boards with low resistance and low self-inductance by means of an interdigitated anode and cathode, thereby providing low dynamic voltage loss. The connector also may include, near where power will be consumed, an interposer board with on-board capacitance to provide even lower dynamic voltage loss. The connector has application to delivering low-voltage, high-current power from a power supply on a first board to electronics on a second board: the low resistance provides low voltage drop for a load current that is constant, while the low inductance and the capacitors provide low voltage fluctuation for a load current that changes. These issues are of great importance, for example, in designing high-performance computers.

Coteus, Paul W.↗

DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗

DOE OSTI2024

Secondary Beams at Jefferson Laboratory

This thesis explores the possibility of producing secondary beams at the Thomas Jefferson National Accelerator Facility (TJNAF). Their possible applications in future experiments are studied using advanced Monte Carlo simulations with state-of-the-art software. In Jefferson Lab’s Hall-A, the interaction of the high-current O(100) µA, medium-energy O(11) GeV electron beam produced by the Continuous Electron Beams Accelerator Facility (CEBAF) with the Beam-Dump (BD) generates a substantial shower of standard model particles. This interaction creates a high-intensity secondary muon and neutrino beam and hypothetical Light Dark Matter (LDM) particles. Additionally, with the proposed Compact Photon Source (CPS), Hall-D could offer the possibility of producing an intense muon beam alongside a photon beam.

Fulci, Antonino↗

DOE OSTI2025

Packaging a 650V/400A GaN Half-bridge Power Module with Ultra-low Parasitics for Electric Vehicle Drive Applications

This paper proposes a compact and efficient half-bridge power module with three 650 V / 150 A GaN dies in parallel. The power module incorporates a main power printed circuit board (PCB), an interface PCB, and a flex PCB to achieve low parasitics in both power loop and gate-side connection, resolving the issue of high parasitics typically encountered with wire bonding in high-current applications. Additionally, the interface PCB decouples the design constraints between the power loop and the gate loops. The proposed design is optimized with a vertical loop configuration to reduce power loop inductance through magnetic flux cancellation. Finite element analysis indicates that the power loop inductance is 0.58 nH at 100 MHz, while the maximum die junction temperature reaches 131 °C under an ambient temperature of 65 °C and a load current of 385 A. The proposed multi-piece PCB structure reduces the inductance of the drive circuit to minimize EMI and to mitigate false triggering. At the same time, it reduces impedance mismatches across different driver circuits, thereby achieving dynamic current sharing in multi-chip parallel configurations. Under simulation conditions of 400 V / 385 A, the current imbalance among chips was limited to 5 A. A 400 V / 385 A double-pulse test was conducted to experimentally validate the performance of the proposed power module.

30 DIRECT ENERGY CONVERSION↗