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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films

Magnetic and electrical transport properties of fluorine-ion-beam irradiated GaMnAs films were studied as a function of ion fluence and energy of impinging ions. The different nature of defects created by ions of low- and high-energies is explored in this work by means of transport and magnetization measurements. Our results show that the saturation magnetization of the irradiated samples is suppressed as the ion fluence is increased. Interestingly, however, the same effect is not observed in the case of critical temperature, which remains nearly the same for irradiated and non-irradiated samples measured by superconducting quantum interference device. Magnetotransport measurements appear to provide more reliable results regarding the critical temperature, since they are consistent with the ion-irradiation-induced disorder in the GaMnAs film, quantified here as the increase of the resistivity. We discuss this behavior based on the inhomogeneity of damages caused by the irradiation process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Silicon/HfO{sub 2} interface: Effects of proton irradiation

Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO{sub 2} interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Stabilization of Preternatural Barium Oxidation States as an Unexpected Byproduct of β-Decay: Discovery of a New Halide Semiconductor Alloy

137 Cs has a wide range of roles in the nuclear industry. The solid material, safely encapsulated in CsCl as 137 CsCl, is stored as fission product waste from nuclear power production and legacy waste from nuclear weapons production; it has also served as a radiation source in food and sewage irradiators as well as medical devices. However, because of the solubility of the chloride salt and the relatively high specific activity of 137 Cs, damaged or broken capsules can lead to severe radiological accidents. Safe capsule design and material recycling are complicated by the unclear structural evolution during β-decay, which remains ambiguous due to the differing oxidation states of Cs (1+) and Ba (2+). Here, in this study, we use first-principles calculations to investigate the evolving structure–property relationships of Cs 1–x Ba x Cl during β-decay. Despite the well-established 2+ formal oxidation state of alkali-earth metals, we find that Ba 1+ can be stabilized in the form of a mixed-valence alloy at low concentrations. Specifically, we identify three regimes for the β-decay of 137 Cs into CsCl: Ba-doped CsCl (Ba ≤ 14%), wherein Ba has the expected 2+ oxidation state; Cs–Ba–Cl alloys, where Ba has a mix of the usual Ba 2+ and highly unusual Ba 1+ oxidation state in the form of a quasi-disordered mixed-valence alloy (Ba = 25%); and phase separation into a CsCl + BaCl 2 + Ba (m) mechanical mixture, where Ba reverts to its expected 2+ oxidation state (Ba > 25%). Surprisingly, the Cs 0.75 Ba 0.25 Cl mixed-valence alloy is a narrow indirect band gap semiconductor (1.05 eV) despite the insulating nature of both CsCl and BaCl 2 . It also exhibits strongly excitonic polarized optical properties, has glass-like ultralow thermal conductivity (directional average of 0.21 W/mK at 300 K), and shows greater resistance to deformation under both tensile and volumetric strengths compared with the original CsCl structure (e.g., shear and Young’s modulus of 9.04 and 31.62 GPa, respectively). These findings imply that transmutation of 137 Cs leads to highly unusual chemical bonding that stabilizes Ba 1+ in local regions of the quasi-disordered Cs 0.25 Ba 0.75 Cl, resulting in anomalous physical properties. Moreover, this discovery provides valuable insight for safe nuclear waste capsule design, which can aid in preventing environmental or human exposure to radioactive materials.

Fuhr, Addis S. [Oak Ridge National Laboratory (ORN↗
DOE OSTI2015

Collimated electron beam accelerated at 12 kV from a Penning discharge

A pulsed electron beam accelerated at 12 kV with a duration of 40 μs per pulse is obtained from a Penning discharge with a hollow anode and two cathodes. The electrons are extracted through a hole in one of the cathodes and focused by a pair of coils. The electron beam has a diameter of a few mm in the cross section, while the beam current reaches peak values of 400 mA, depending on the magnetic field inside the focussing coils. This relatively inexpensive and compact device is suitable for the irradiation of small material samples placed in high vacuum.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification

Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Sandia National Laboratories (FY19 Progress Report)

The Energetic Neutrons campaign led by Sandia National Laboratories (SNL) had a successful year testing electronic devices under 14 MeV neutron irradiation at OMEGA. During FY19 SNL employees were trained to take over new responsibilities while visiting LLE, continued collaborating with external organizations and generated knowledge that supports SNL's National Security mission.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2025

Neutron production and dosimetry with D(D,n) 3 He, 12 C(D,n) 13 N and 7 Li(p,n) 7 Be reactions at the Sandia Ion Beam Laboratory

Neutrons are produced at the Sandia Ion Beam Laboratory (IBL) using a beam of 280 keV D 2 + ions onto an erbium deuteride target. At test locations in the forward direction these neutrons have energies of about 2.9 MeV and a maximum flux on the flange of the test chamber of about 10 10 n/cm 2 /hour. Dosimetry is done by counting associated charged particles and by nickel foil activation dosimetry. Neutrons with higher energies, up to 6 MeV are produced using higher energy deuterium, up to 3 MeV, from the Pelletron ion accelerator at the IBL on a deuteride target. This report provides detailed information on the methods used for the production and dosimetry of neutrons by the D(D,n) 3 He nuclear reaction at the IBL. Neutron production by the 7 Li(p,n) 7 Be reaction with a proton beam from the Pelletron on a lithium target, such as LiF is also discussed. This produces neutrons with lower energy, in the range from about 0.1 to 1.3 MeV. Neutron production by the 12 C(D,n) 13 N reaction is also discussed. The purpose of this report is to provide information needed to test the effects of neutron irradiation on semiconductor materials and devices at the Sandia IBL.

36 MATERIALS SCIENCE↗
NASA NTRS1977

The self-calibrating sensor of the Eclectic Satellite Pyrheliometer /ESP/ program

A self-calibrating thermopile sensor having a cavity type receiver is described. Its incorporation into pyrheliometric instrumentation, including the electronics and control, is also discussed. Completed devices are capable of solar irradiance measurements with an accuracy to within 0.5% and can detect solar variability to a level approaching 0.001% in space.

Hickey, J. R.↗
DOE OSTI2021

Nuclear Material Control and Accountancy Approach for Pebble Fueled Reactors using a Novel Pebble-Type Identification and Classification Technology

In FY21, Argonne National Laboratory (ANL) with researchers at Texas A&M University (TAMU) designed and engineered a prototypical device for accounting types of irradiated pebbles (for example with different 235U enrichments or pure graphite) in Pebble-Fueled Reactors (PFRs). Through engagements with reactor designers, a need arose to assist in identifying and categorizing types of pebbles as a complementary nuclear material control method that would synergize with designers’ use of fuel burnup measurements for material accountancy needs. As part of an overall nuclear material control approach, a concept of pebble batch accounting was investigated using extrinsic non-radiological features to identify intrinsic characteristics. This concept of batch accounting led to the ability of identifying types of pebbles based on characteristics such as initial 235U enrichment of pebble batches or dates of introduction into the reactor core. Identification was achieved by embedding the 5-mm thick graphite periphery of pebbles with 2-mm diameter inert Yttria-Stabilized Zirconia (YSZ) microspheres to achieve an averaged volumetric density (i.e., common spacing between microspheres) unique to that type of pebble. With an ultrasound imaging system in proximity with each pebble, the YSZ microspheres in the pebble proved visible and their spacing became the unique feature upon which pebble type categorization could occur. At the culmination of FY21, ANL intended on delivering and installing the prototype at TAMU for initial testing but, due to the on-going pandemic, this was postponed until FY22.

Gariazzo, Claudio↗
DOE OSTI2015

Optimal electron irradiation as a tool for functionalization of MoS{sub 2}: Theoretical and experimental investigation

We demonstrate the utility of electron irradiation as a tool to enhance device functionality of graphene-analogous MoS{sub 2}. With the help of first-principles based calculations, vacancy-induced changes of various electronic properties are shown to be a combined result of crystal-field modification and spin-orbital coupling. A comparative theoretical study of various possible vacancy configurations both in bulk and monolayer MoS{sub 2} and related changes in their respective band-structures help us to explain plausible irradiation induced effects. Experimentally, various structural forms of MoS{sub 2} in bulk, few layered flakes, and nanocrystals are observed to exhibit important modification of their magnetic, transport, and vibrational properties, following low doses of electron irradiation. While irradiated single crystals and nanocrystals show an enhanced magnetization, transport properties of few-layered devices show a significant increase in their conductivity, which can be very useful for fabrication of electronic devices. Our theoretical calculations reveal that this increase in n-type conductivity and magnetization can be correlated with the presence of sulfur and molybdenum vacancies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Flash healing of laser-induced graphene

The advancement of laser-induced graphene (LIG) technology has streamlined the fabrications of flexible graphene devices. However, the ultrafast kinetics triggered by laser irradiation generates intrinsic amorphous characteristics, leading to high resistivity and compromised performance in electronic devices. Healing graphene defects in specific patterns is technologically challenging by conventional methods. Herein, we report the rapid rectification of LIG’s topological defects by flash Joule heating in milliseconds (referred to as F-LIG), whilst preserving its overall structure and porosity. The F-LIG exhibits a decreased I D /I G ratio from 0.84 – 0.33 and increased crystalline domain from Raman analysis, coupled with a 5-fold surge in conductivity. Pair distribution function and atomic-resolution imaging delineate a broader-range order of F-LIG with a shorter C-C bond of 1.425 Å. The improved crystallinity and conductivity of F-LIG with excellent flexibility enables its utilization in high-performance soft electronics and low-voltage disinfections. Notably, our F-LIG/polydimethylsiloxane strain sensor exhibits a gauge factor of 129.3 within 10% strain, which outperforms pristine LIG by 800%, showcasing significant potential for human-machine interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Performance enhancement of fullerene based solar cells upon NIR laser irradiation

Photovoltaic performance enhancement of fullerene based solar cells was achieved upon exposure to near-infrared (NIR) laser pulses. In this work, the solar cells were fabricated with poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61 -butyric acid methyl ester (PCBM) under ambient conditions. The cells were then post-treated with NIR femto-second laser pulses at 800 nm for different intervals of time. An enhancement of 50% in the power conversion efficiency was achieved for the devices with 15 minutes of NIR laser irradiation compared to that of the control device. The enhancement in the power conversion efficiency is attributed to the formation of a covalent linkage between P3HT and PCBM as suggested by Matrix-assisted laser desorption/ionization time of flight mass spectroscopic analysis on a blend of a thiophene oligomer and PCBM before and after NIR laser exposure.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Luminescence imaging of water during carbon-ion irradiation for range estimation

Purpose: The authors previously reported successful luminescence imaging of water during proton irradiation and its application to range estimation. However, since the feasibility of this approach for carbon-ion irradiation remained unclear, the authors conducted luminescence imaging during carbon-ion irradiation and estimated the ranges. Methods: The authors placed a pure-water phantom on the patient couch of a carbon-ion therapy system and measured the luminescence images with a high-sensitivity, cooled charge-coupled device camera during carbon-ion irradiation. The authors also carried out imaging of three types of phantoms (tap-water, an acrylic block, and a plastic scintillator) and compared their intensities and distributions with those of a phantom containing pure-water. Results: The luminescence images of pure-water phantoms during carbon-ion irradiation showed clear Bragg peaks, and the measured carbon-ion ranges from the images were almost the same as those obtained by simulation. The image of the tap-water phantom showed almost the same distribution as that of the pure-water phantom. The acrylic block phantom’s luminescence image produced seven times higher luminescence and had a 13% shorter range than that of the water phantoms; the range with the acrylic phantom generally matched the calculated value. The plastic scintillator showed ∼15 000 times higher light than that of water. Conclusions: Luminescence imaging during carbon-ion irradiation of water is not only possible but also a promising method for range estimation in carbon-ion therapy.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2021

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗
DOE OSTI2022

Bifacial all-perovskite tandem solar cells

The efficiency of all-perovskite tandem devices falls far below theoretical efficiency limits, mainly because a widening bandgap fails to increase open-circuit voltage. We report on a bifacial all-perovskite tandem structures with an equivalent efficiency of 29.3% under back-to-front irradiance ratio of 30. This increases energy yield and reduces the required bandgap of a wide-bandgap cell. Open-circuit voltage deficit is therefore minimized, although its performance under only front irradiance is not ideal. The bifacial device needs a sputtered rear transparent electrode, which could reduce photon path length and deteriorate stability of Pb-Sn perovskites. Embedding a light-scattering micrometer-sized particle layer into perovskite to trap light, effectively increases absorptance by 5 to 15% in the infrared region. Using a nonacidic hole transport layer markedly stabilizes the hole-extraction interface by avoiding proton-accelerated formation of iodine. These two strategies together increase efficiency of semitransparent Pb-Sn cells from 15.6 to 19.4%, enabling fabrication of efficient bifacial all-perovskite tandem devices.

14 SOLAR ENERGY↗
DOE OSTI2014

A light-modified ferroelectric resistive switching behavior in Ag/BaMoO{sub 4}/FTO device at ambient temperature

BaMoO{sub 4} powder was prepared by a facile hydrothermal synthesis. And the BaMoO{sub 4}/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO{sub 4} layer is about 20 µm. The bipolar resistive switching effect has been observed in Ag/BaMoO{sub 4}/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers. - Graphical abstract: We fabricate a resistive switching device based on Ag/BaMoO{sub 4}/FTO, the device shows superior white-light controlled bipolar resistive switching memristive characteristics. - Highlights: • The BaMoO{sub 4} nanosquares powder was prepared by a hydrothermal synthesis. • The resistive switching of the Ag/BaMoO{sub 4}/FTO device was observed for the first time. • It is shown that the resistive switching is greatly improved under the white light irradiation. • The mechanism of resistive switching is attributed to the ferroelectric polarization reversal.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗