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Results for “MAGNETIC SWITCHING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Intrinsic quantized anomalous Hall effect in a moiré heterostructure

The quantum anomalous Hall (QAH) effect combines topology and magnetism to produce precisely quantized Hall resistance at zero magnetic field. We report the observation of a QAH effect in twisted bilayer graphene aligned to hexagonal boron nitride. The effect is driven by intrinsic strong interactions, which polarize the electrons into a single spin- and valley-resolved moiré miniband with Chern number C = 1. In contrast to magnetically doped systems, the measured transport energy gap is larger than the Curie temperature for magnetic ordering, and quantization to within 0.1% of the von Klitzing constant persists to temperatures of several kelvin at zero magnetic field. Electrical currents as small as 1 nanoampere controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.

Science & Technology - Other Topics↗
DOE OSTI2020

Spin orbit torque switching of synthetic Co/Ir/Co trilayers with perpendicular anisotropy and tunable interlayer coupling

Spin orbit torque (SOT) has attracted much attention as an energy efficient electrical method to switch the magnetization in single magnetic layer with both in-plane and perpendicular anisotropy. Here, we report SOT switching of synthetic antiferromagnetic and ferrimagnetic Co/Ir/Co trilayers, where the net magnetization and the interlayer coupling strength are highly controllable. Here, a weak external field dependence of the SOT switching was observed due to the robust domain wall structure in the trilayer. The switching current density was observed to scale inversely with the net magnetization. For trilayers with the same net magnetization, switching current is independent of the layer order because switching in the thicker Co layer dominates. In both ferromagnetic and antiferromagetic regimes, the switching current reflects the interlayer coupling strength.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2014

Switching current density reduction in perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions

We investigate the switching current density reduction of perpendicular magnetic anisotropy spin transfer torque magnetic tunneling junctions using micromagnetic simulations. We find that the switching current density can be reduced with elongated lateral shapes of the magnetic tunnel junctions, and additional reduction can be achieved by using a noncollinear polarizer layer. The reduction is closely related to the details of spin configurations during switching processes with the additional in-plane anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fabrication of FeO{sub x} thin films and the modulation of transport and magnetic properties by resistance switching in Au/α-Fe{sub 2}O{sub 3}/Pt heterostructure

It was found that by using the same α-Fe{sub 2}O{sub 3} target in fabrication process, an oxygen-deficient and an oxygen-sufficient atmosphere facilitated the formation of Fe{sub 3}O{sub 4} and α-Fe{sub 2}O{sub 3}, respectively. The Au/α-Fe{sub 2}O{sub 3}/Pt heterostructure showed a memristive bipolar resistance switching. A clear difference was observed in the transport and magnetic properties between the two resistance states. The enhanced conductivity and magnetization in the Au/α-Fe{sub 2}O{sub 3}/Pt heterostructure are believed to result from an enhanced electron hopping between Fe{sup 3+}-Fe{sup 2+} pairs and Fe{sup 3+}-O-Fe{sup 2+} double exchange coupling effect. The enhanced Fe{sup 2+} comes from a redox transition between two phases (one behaves like Fe{sub 3}O{sub 4} and the other like α-Fe{sub 2}O{sub 3}), due to the electrochemical migration of oxygen vacancies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Spin–orbit torque in a three-fold-symmetric bilayer and its effect on magnetization dynamics

Field-free switching of perpendicular magnetization has previously been observed in an epitaxial L1 1 -ordered CoPt/CuPt bilayer and attributed to spin–orbit torque (SOT) arising from the crystallographic 3m point group of the interface. Using a first-principles nonequilibrium Green's function formalism combined with the Anderson disorder model, we calculate the angular dependence of the SOT in a CoPt/CuPt bilayer and find that the magnitude of the 3m SOT is about 20% of the conventional dampinglike SOT. We further study the magnetization dynamics in perpendicularly magnetized films in the presence of 3m SOT and Dzyaloshinskii–Moriya interaction, using the equations of motion for domain wall dynamics and micromagnetic simulations. For systems where strong interfacial DMI results in the Néel character of domain walls, we find that a very large current density is required to achieve deterministic switching, because reorientation of the magnetization inside the domain wall is necessary to induce the switching asymmetry. For thicker films with relatively weak interfacial DMI and the Bloch character of domain walls, deterministic switching is possible at much smaller current densities, which may explain the recent experimental findings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Single-shot switching in Tb/Co-multilayer based nanoscale magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal of the magnetization by an ultrashort laser pulse is extremely important. Here we demonstrate single-shot switching of Tb/Co-multilayer based nanoscale MTJs by combining the optical writing and the electrical read-out methods. A 90-fs-long laser pulse switches the magnetization of the storage layer (SL). The change in the tunneling magnetoresistance (TMR) between the SL and a reference layer (RL) is probed electrically across the oxide barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The nature of the magnetization reversal of both SL and RL in a continuous film is probed with a depth-resolved magneto-optical Kerr effect (MOKE) magnetometry. The ultrafast dynamics in the continuous full-MTJ stack is investigated with the time-resolved pump–probe technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Multiphase Resistivity Model for Magnetic Nanocomposites Developed for High Frequency, High Power Transformation

New power conversion systems that offer promise to transform electricity grids into unified interactive supply networks require high-resistivity soft-magnetic materials to allow for switching of magnetic materials at frequencies approaching 100 kHz for power transformation in the megawatt range. Amorphous and nanocomposite soft-magnetic materials, which represent the state of the art in terms of high power densities and low losses at high frequencies, have resistivities that depend on the structures and spatial distributions of multiple phases in thin ribbons. We present a multiphase resistivity model applicable to nanocomposite materials by considering an equivalent circuit approach considering paths through an amorphous, crystalline, and growth inhibitor shell phase. We detail: (a) identification of amorphous, crystalline, and shell phases; (b) consideration of the role of the morphology of each phase in an equivalent circuit model for the resistance; (c) a two-band model for the Fe/Co composition dependence of the resistivity in crystalline and amorphous phases; (d) a virtual bound state model for resistivity to explain increased resistivity due to early transition-metal growth inhibitors in the shell surrounding the nanocrystalline phase; and (e) disorder effects on amorphous phase resistivity. Experimental design and results for systems of interest in high-frequency power transformation are discussed in the context of our model including: (a) techniques for measurements of cross-section and density, (b) four-point probe and surface resistivity measurements, and (c) measurements in Fe- and Co-rich systems comparing amorphous and nanocomposite materials.

DeGeorge, V↗
DOE OSTI2014

Magnetic properties of Fe doped SmCrO{sub 3} perovskite

The compound SmCr{sub 1−x} Fe{sub x}O{sub 3} perovskites were prepared by citric acid route. the samples were characterized by XRD and SEM. The temperature and field dependent magnetization measurements were carried out in the temperature range of 5K −400 K at 0.01T field and −5T to 5T field at 2K. SmCrO3 compound has shown two magnetic transition temperatures at 197 K and 38 K. The observed behavior at 197 K is the characteristic of anti-ferromagnetic ordering of Cr{sup 3+} moments with weak ferromagnetism. The drop in magnetization below 38 K is due to the spin reorientation of Sm{sup 3+} in anti ferromagnetic arrangement and Cr{sup 3+}spins. the doping of Fe in SmCrO{sub 3} compound has shown a decrease in T{sub N1} and also the two magnetization reversals at 177K and 57K. The magnetic behavior at low temperatures is (T<T{sub N1}) explained in the context of competition among moments of rare earth (Sm) and transition metal ion(Cr/Fe). The existence of the two magnetization reversals offers the characteristic switching of magnetization without changing the direction of the applied magnetic field.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Reversible Control of Interfacial Magnetism through Ionic-Liquid-Assisted Polarization Switching

The ability to control magnetism of materials via electric field enables a myriad of technological innovations in information storage, sensing, and computing. In this paper, we use ionic-liquid-assisted ferroelectric switching to demonstrate reversible modulation of interfacial magnetism in a multiferroic heterostructure composed of ferromagnetic (FM) La 0.8 Sr 0.2 MnO 3 and ferroelectric (FE) PbZr 0.2 Ti 0.8 O 3 . It is shown that ionic liquids can be used to persistently and reversibly switch a large area of a FE film. Finally, this is a prerequisite for polarized neutron reflectometry (PNR) studies that are conducted to directly probe magnetoelectric coupling of the FE polarization to the interfacial magnetization.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tailoring magnetization reversal of a single-domain bar nanomagnet via its end geometry

Nanoscale single-domain bar magnets are building blocks for a variety of fundamental and applied mesoscopic magnetic systems, such as artificial spin ices, magnetic shape-morphing microbots, and magnetic majority logic gates. The magnetization reversal switching field of the bar nanomagnets is a crucial parameter that determines the physical properties and functionalities of their constituted artificial systems. Previous methods on tuning the magnetization reversal switching field of a bar nanomagnet usually relied on modifying its aspect ratio, such as its length, width, and/or thickness. Here, we show that the switching field of a bar nanomagnet saturates when extending its length beyond a certain value, preventing further tailoring of the magnetization reversal via aspect ratios. We showcase a highly tunable switching field of a bar nanomagnet by tailoring its end geometry without altering its size. This provides an easy method to control the magnetization reversal of a single-domain bar nanomagnet. It would enable new research and/or applications, such as designing artificial spin ices with additional tuning parameters, engineering magnetic microbots with more flexibility, and developing magnetic quantum-dot cellular automata systems for low power computing.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices

We performed thousands of single-shot, real-time measurements of spin-transfer-torque induced switching in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junctions having in-plane magnetizations. Our investigation discovered a variety of switching paths occurring in consecutive, nominally identical switching trials of a single device. By mapping the voltage as a function of time to an effective magnetization angle, we determined that reversal of a single device occurs via a variety of thermally activated paths. Our results show a complex switching behavior that has not been captured by previous observations and cannot be fully explained within the simple macrospin model.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Investigation of the magnetic properties of insulating thin films using the longitudinal spin Seebeck effect

The longitudinal spin Seebeck effect is used as a detector for the magnetic properties and switching characteristics of magnetic thin insulating films. We use a 300 nm and a 20 nm thick Yttrium Iron Garnet (YIG, Y{sub 3}Fe{sub 5}O{sub 12}) film prepared by pulsed laser deposition and afterwards coated by platinum for the detection of the thermally excited magnons by the inverse spin Hall effect. The inverse spin Hall signals reveal a magnetic uniaxial anisotropy along the direction of the platinum stripe in the thicker film. For the thin film we find a more isotropic behavior, which is complementarily observed using the magnetoresistance occurring at the platinum/YIG interface. We explain our results on the basis of x-ray diffraction data, which reveal a miscut of the substrate and film surface and an expansion of the YIG lattice. Both findings favor a growth-induced magnetic anisotropy that we observe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Magnetic manipulation by resistance switching in CeO{sub 2}/PrBa{sub 2}Cu{sub 3}O{sub 7−δ}/Pt heterostructure: The role of oxygen vacancies

Pronounced bipolar resistance switching with a good retention property has been observed in CeO{sub 2}/PrBa{sub 2}Cu{sub 3}O{sub 7−δ}/Pt heterostructure. The low resistance state and high resistance state exhibited distinguished ferromagnetic signals, as compared to the nearly non-magnetic initial state. It is found that the migration of the oxygen vacancies under electric field is mainly responsible for the electric and the magnetic changes. The modified interfacial electronic structure by the oxygen vacancy migration and the trapping/detrapping of the carriers leads to the resistance switching. The exchange interaction of the hydrogen-like orbitals formed around the singly occupied oxygen vacancies in CeO{sub 2} is accounting for the emerged and modulated ferromagnetic signals. Temperature dependence of resistance in the low resistance state follows a variable range hopping law, further confirming that the amount of oxygen vacancies in the CeO{sub 2} layer directly affects the hydrogen-like orbital radius, which determines the strength of the ferromagnetic coupling.

36 MATERIALS SCIENCE↗
DOE OSTI2015

In-plane current induced domain wall nucleation and its stochasticity in perpendicular magnetic anisotropy Hall cross structures

Hall cross structures in magnetic nanowires are commonly used for electrical detection of magnetization reversal in which a domain wall (DW) is conventionally nucleated by a local Oersted field. In this letter, we demonstrate DW nucleation in Co/Ni perpendicular magnetic anisotropy nanowire at the magnetic Hall cross junction. The DWs are nucleated by applying an in-plane pulsed current through the nanowire without the need of a local Oersted field. The change in Hall resistance, detected using anomalous Hall effect, is governed by the magnetic volume switched at the Hall junction, which can be tuned by varying the magnitude of the applied current density and pulse width. The nucleated DWs are driven simultaneously under the spin transfer torque effect when the applied current density is above a threshold. The possibility of multiple DW generation and variation in magnetic volume switched makes nucleation process stochastic in nature. The in-plane current induced stochastic nature of DW generation may find applications in random number generation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Spin-Orbit Torque Switching of a Nearly Compensated Ferrimagnet by Topological Surface States

Utilizing spin-orbit torque (SOT) to switch a magnetic moment provides a promising route for low-power-dissipation spintronic devices. Here, the SOT switching of a nearly compensated ferrimagnet Gd x (FeCo) 1-x by the topological insulator [Bi 2 Se 3 and (BiSb) 2 Te 3 ] is investigated at room temperature. The switching current density of (BiSb) 2 Te 3 (1.20 × 10 5 A cm -2 ) is more than one order of magnitude smaller than that in conventional heavy-metal-based structures, which indicates the ultrahigh efficiency of charge-spin conversion (>1) in topological surface states. By tuning the net magnetic moment of Gd x (FeCo) 1-x via changing the composition, the SOT efficiency has a significant enhancement (6.5 times) near the magnetic compensation point, and at the same time the switching speed can be as fast as several picoseconds. Combining the topological surface states and the nearly compensated ferrimagnets provides a promising route for practical energy-efficient and high-speed spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Structural, magnetic, and electronic properties of iron selenide Fe{sub 6-7}Se{sub 8} nanoparticles obtained by thermal decomposition in high-temperature organic solvents

Iron selenide nanoparticles with the NiAs-like crystal structure were synthesized by thermal decomposition of iron chloride and selenium powder in a high-temperature organic solvent. Depending on the time of the compound processing at 340 °C, the nanocrystals with monoclinic (M)-Fe{sub 3}Se{sub 4} or hexagonal (H)-Fe{sub 7}Se{sub 8} structures as well as a mixture of these two phases can be obtained. The magnetic behavior of the monoclinic and hexagonal phases is very different. The applied-field and temperature dependences of magnetization reveal a complicated transformation between ferrimagnetic (FRM) and antiferromagnetic (AFM) structures, which can be related to the spin rotation process connected with the redistribution of cation vacancies. From XRD and Mössbauer data, the 3c type superstructure of vacancy ordering was found in the hexagonal Fe{sub 7}Se{sub 8}. Redistribution of vacancies in Fe{sub 7}Se{sub 8} from random to ordered leads to the transformation of the magnetic structure from FRM to AFM. The Mössbauer data indicate that vacancies in the monoclinic Fe{sub 3}Se{sub 4} prefer to appear near the Fe{sup 3+} ions and stimulate the magnetic transition with the rotation of the Fe{sup 3+} magnetic moments. Unusually high coercive force H{sub c} was found in both (H) and (M) nanocrystals with the highest (“giant”) value of about 25 kOe in monoclinic Fe{sub 3}Se{sub 4}. This is explained by the strong surface magnetic anisotropy which is essentially larger than the core anisotropy. Such a large coercivity is rare for materials without rare earth or noble metal elements, and the Fe{sub 3}Se{sub 4}-based compounds can be the low-cost, nontoxic alternative materials for advanced magnets. In addition, an unusual effect of “switching” of magnetization in a field of 10 kOe was found in the Fe{sub 3}Se{sub 4} nanoparticles below 280 K, which can be important for applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators.

Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi 2 Se 3 TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. Additionally, by applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (similar to 6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Theory and phase-field simulations of electrical control of spin cycloids in a multiferroic

Cycloidal spin orders are common in multiferroics. One of the prototypical examples is BiFeO 3 (BFO) which shows a large polarization and a cycloidal antiferromagnetic (AFM) order at room temperature. Here, we employ Landau theory and phase-field simulations to analyze the coupled switching dynamics of polarization and cycloidal AFM orders in BFO. We identify 14 types of transitional spin structures between two cycloids and nine electric-field-induced spin switching paths. We demonstrate the electric-field-induced rotation of wave vectors of the cycloidal spins and discover two types of cycloidal spin switching dynamics: fast local spin flips and slow rotation of wave vectors. Also, we construct roadmaps to achieve the switching between any two spin cycloids through multistep applications of electric fields. Furthermore, this paper provides a theoretical framework for the phenomenological description of spin cycloids and a fundamental understanding of the switching mechanisms to achieve electrical control of magnetic orders.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗