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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Inadvertently programmed bits in Samsung 128 Mbit flash devices: a flaky investigation

JPL's X2000 avionics design pioneers new territory by specifying a non-volatile memory (NVM) board based on flash memories. The Samsung 128Mb device chosen was found to demonstrate bit errors (mostly program disturbs) and block-erase failures that increase with cycling. Low temperature, certain pseudo- random patterns, and, probably, higher bias increase the observable bit errors. An experiment was conducted to determine the wearout dependence of the bit errors to 100k cycles at cold temperature using flight-lot devices (some pre-irradiated). The results show an exponential growth rate, a wide part-to-part variation, and some annealing behavior.

flash memory program disturb wearout erase fail re↗
DOE OSTI2026

On the Ordering Mechanism of Cu + in 2D van der Waals Multiferroic CuCrP 2 S 6

CuCrP 2 S 6 is a van der Waals multiferroic where the tunable Cu + sublattice underpins its exceptional ferroelectric and electronic switching properties. Yet, the microscopic mechanism governing Cu + ordering has remained elusive. Here, we combine single-crystal X-ray and neutron diffraction with pair distribution function analysis to uncover a temperature-driven evolution of Cu + ordering, giving rise to an incommensurate quasi-antipolar phase between the paraelectric and antiferroelectric states. The modulation originates from correlated Cu + occupancy redistribution coupled to breathing distortion of surrounding S 3 triangles, establishing a symmetry-adapted lattice distortion mode. Diffuse scattering persisting over 35 K above the transition confirms that the structural instability follows an order-disorder mechanism. The spontaneous off-centering of Cu + positions CuCrP 2 S 6 as a model platform for correlated order-disorder phenomena in 2D layered ferroics, and provides design principles for next-generation memory and logic devices.

ferroelectrics↗
DOE OSTI2026

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.

Engineering - Electronic and electrical engineerin↗
DOE OSTI2024

Epitaxial Thin Film Growth on Recycled SrTiO 3 Substrates Toward Sustainable Processing of Complex Oxides

Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high‐quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO 3 (STO), MgO, LaAlO 3 , a‐Al 2 O 3, and many others. Recent successes in transferring these complex oxides as free‐standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost‐effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high‐resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre‐strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y 3 Fe 5 O 12 ) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high‐quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices.

pre-strained STO surfaces↗
DOE OSTI2025

Néel domain walls with bistable chirality in a perpendicularly magnetized ferrimagnetic insulator

Field-free spin-orbit torque-driven domain wall motion in magnetic thin films with perpendicular magnetic anisotropy (PMA) requires the domain walls to have Néel character. Conventionally, Néel domain walls are stabilized by the Dzyaloshinskii-Moriya interaction (DMI) in ultrathin films. Here, in a europium iron garnet thin film with PMA and an additional uniaxial in-plane anisotropy, we demonstrate two bistable Néel domain wall states in the absence of DMI, and the capability to toggle the wall states with an in-plane field pulse and consequently their directions of motion under a current pulse. We present a phase diagram for the bistable Néel domain wall states as a function of in-plane field pulse width and amplitude. By fitting the experimental data to an analytical model of Néel wall reversal through the nucleation and propagation of Bloch lines, we extract the length of the initial reversed domain wall segment and Bloch line nucleation energy barrier. Current-driven motion of in-plane anisotropy stabilized Néel walls is qualitatively different from that of DMI-stabilized ones owing to the different symmetry of the effective fields that stabilize the Néel configuration. Furthermore, we present a proof of principle demonstration for 2-bit random number generation based on the stochastic reversal of domain wall chirality. These results provide critical insight into the topological energy barrier of Bloch lines and identify paths towards domain wall-based memory and computing devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Stabilization of magnetic bubbles in [Ni/Co]n multilayers on an oxygen-reconstructed Nb(110) surface via an ultra-thin Cu interlayer

Magnetic thin films hosting topological spin textures, such as magnetic skyrmions, hold high potential for breakthroughs in the field of spintronics, due to good scalability and energy efficiency. Novel computational architectures such as memory-in-logic devices rely on material platforms able to host those topological spin textures. Furthermore, recently proposed designs of novel quantum information technologies are based on heterostructures where topological spin textures are in direct proximity to a superconducting layer. Here, we demonstrate the stabilization of out-of-plane magnetic bubbles in highly ordered [Ni/Co]n multilayers on a Nb(110) single crystal. This is achieved without the need for the removal of the well-known Nb(110)-oxide surface reconstruction, due to the introduction of an ultra-thin Cu interlayer in between the Nb substrate and the magnetic multilayer. The Cu interlayer generates a well-ordered hexagonal surface, which is key for the epitaxial growth of the [Ni/Co]n multilayers hosting the desired out-of-plane anisotropy. The magnetic ground state of the prepared material stacks is directly imaged via spin-polarized low-energy electron microscopy, revealing the presence of magnetic bubble domains with lateral sizes as small as 450 nm.

Dibajeh, Ahmad↗
DOE OSTI2025

Large enhancement of ferroelectric properties of perovskite oxides via nitrogen incorporation

Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning of those properties has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due to the difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO3 thin films have been synthesized by reactive pulsed-laser deposition in a nitrogen growth atmosphere. The enhanced hybridization between titanium and nitrogen induces a large ferroelectric polarization of 70 μC/cm2 and high Curie temperature of ~1213 K, which are ~2.8 times larger and ~810 K higher than in bulk BaTiO3, respectively. These results suggest great potential for anion-substituted perovskite oxides in producing emergent functionalities and device applications.

Wang, Tao↗
NASA NTRS1973

PLZT block data composers operated in differential phase mode

The use of PLZT ceramics with the 7/65/35 composition in block data composer (BDC) input devices for holographic memory systems has previously been described for operation in the strain biased, scattering, and edge effect modes. A new and promising mode of BDC operation is the differential phase mode in which each element of a matrix array BDC acts as a phase modulator. The phase modulation results from a phase difference in the optical path length between the electrically poled and depoled states of the PLZT. It is shown that a PLZT BDC can be used as a matrix-type phase modulator to record and process digital data by the differential phase mode in a holographic recording/processing system with readout contrast ratios of between 10:1 and 15:1. The differential phase mode has the advantages that strain bias is not required and that the thickness and strain variations in the PLZT are cancelled out.

Drake, M. D.↗
NASA NTRS1977

Mask and display program

Program is used to create complex lines, shapes, circles and alpha-numeric characters rapidly and easily, and format them for use on some pattern generation. System is applicable as aid to designers of microelectronics, integrated optics, bubble memories and other devices requiring precise artwork.

Routh, D.↗
NASA NTRS1982

Programable Interface Handles Many Peripherals

Microprocessor-based interface simplifies interconnection of peripheral device with common memory of network of minicomputers. Interface consists of microprocessor, bidirectional port that connects to common memory, bidirectional port that connects to user-selected peripheral, and asynchronous serial communications port. Programable interface is based around 6800 microprocessor. It is assembled from 90 integrated circuits.

Jasinski, M.↗
NASA NTRS1988

Index grating lifetime in photorefractive GaAs

The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measure was about 8 s under a read beam intensity of 0.7 mW/sq cm with the grating periodicity being 0.63 microns. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to about 10 mW/sq cm and 4 microns, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements, for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

Cheng, Li-Jen↗
NASA NTRS1989

Read disturb errors in a CMOS static RAM chip

Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.

Wood, Steven H.↗
NASA NTRS1995

Rotary actuator

Rotary actuators and other mechanical devices incorporating shape memory alloys are provided herein. Shape memory alloys are a group of metals which when deformed at temperatures below their martensite temperatures, resume the shapes which they had prior to the deformation if they are heated to temperatures above their austensite temperatures. Actuators in which shape memory alloys are employed include bias spring types, in which springs deform the shape memory alloy (SMA), and differential actuators, which use two SMA members mechanically connected in series. Another type uses concentric cylindrical members. One member is in the form of a sleeve surrounding a cylinder, both being constructed of shape memory alloys. Herein two capstans are mounted on a shaft which is supported in a framework. Each capstan is capable of rotating the shaft. Shape memory wire, as two separate lengths of wire, is wrapped around each capstan to form a winding around that capstan. The winding on one capstan is so wrapped that the wire is in a prestretched state. The winding on the other capstan is so wrapped that the wire is in a taut, but not a prestretched, state. Heating one performs work in one direction, thus deforming the other one. When the other SMA is heated the action is reversed.

Brudnicki, Myron↗
NASA NTRS2002

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Asbok K.↗
NASA NTRS2004

The Dynamics of the Atmospheric Radiation Environment at Aviation Altitudes

Single Event Effects vulnerability of on-board computers that regulate the: navigational, flight control, communication, and life support systems has become an issue in advanced modern aircraft, especially those that may be equipped with new technology devices in terabit memory banks (low voltage, nanometer feature size, gigabit integration). To address this concern, radiation spectrometers need to fly continually on a multitude of carriers over long periods of time so as to accumulate sufficient information that will broaden our understanding of the very dynamic and complex nature of the atmospheric radiation environment regarding: composition, spectral distribution, intensity, temporal variation, and spatial variation.

Stassinopoulos, Epaminondas G.↗
NASA NTRS2007

Structural Bus and Release Mechanisms on the ST5 Satellites: Summary and Status

The Space Technology 5 Mechanical System met the challenge of packaging a fully functional science and technology satellite system with its Deployer mechanism into a compact 0.07cu m volume. Three 25 kg satellites were orbited in constellation in March, 2006. The ST5 mechanical system is composed of 1) The Structural Bus; 2) Magnetometer Instrument Boom 3) Spacecraft Deployer Release Mechanism This system includes a highly integrated electronics enclosure as a multifunctional structure; a lightweight, magnetically clean Magnetometer Boom; the first use of Nitinol Shape-Memory Alloy trigger devices for deploying multiple spacecraft; an innovative compliant mount for the umbilical connector and a Deployer mechanism that imparts both separation velocity and mission spin rate to three constellation flying satellites These elements employed cutting-edge design and analysis tools, state-of-the-art testing facilities and proven engineering techniques to meet stringent performance criteria, enabling the mission s success.

Rossoni, Peter↗
NASA NTRS2011

Nanomaterials for Electronics and Optoelectronics

Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

Koehne, Jessica E.↗
NASA NTRS2018

Lessons Learned in the Flight Qualification of the S-NPP and NOAA-20 Solar Array Mechanisms

Deployable solar arrays are the energy source used on almost all Earth orbiting spacecraft and their release and deployment are mission-critical; fully testing them on the ground is a challenging endeavor. The 8 meter long deployable arrays flown on two sequential NASA weather satellites were each comprised of three rigid panels almost 2 meters wide. These large panels were deployed by hinges comprised of stacked constant force springs, eddy current dampers, and were restrained through launch by a set of four releasable hold-downs using shape memory alloy release devices. The ground qualification testing of such unwieldy deployable solar arrays, whose design was optimized for orbital operations, proved to be quite challenging and provides numerous lessons learned. A paperwork review and follow-up inspection after hardware storage determined that there were negative torque margins and missing lubricant, this paper will explain how these unexpected issues were overcome. The paper will also provide details on how the hinge subassemblies, the fully-assembled array, and mechanical ground support equipment were subsequently improved and qualified for a follow-on flight with considerably less difficulty. The solar arrays built by Ball Aerospace Corp. for the Suomi National Polar Partnership (S-NPP) satellite and the Joint Polar Satellite System (JPSS-1) satellite (now NOAA-20) were both successfully deployed on-obit and are performing well.

Helfrich, Daniel↗