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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Nonexcitonic mechanism for electronic and structural phase transitions in Ta 2 ⁢Ni⁢(Se,S) 5

Here, we present a first-principles study based on density functional theory (DFT) on the electronic and structural properties of Ta 2 NiSe 5 , a layered transition metal chalcogenide that has been considered as a possible candidate for an excitonic insulator. Our systematic DFT results however provide a nonexcitonic mechanism for the experimentally observed electronic and structural phase transitions in Ta 2 NiSe 5 , in particular explaining why sulfur substitution of selenium reduces the distortion angle in the low-temperature phase and potassium dosing closes the gap in the electronic structure. Moreover, the calculations show that these two effects couple to each other. Further, our first-principles calculations predict several changes in both the crystal structure and electronic structure under the effects of uniform charge dosing and uniaxial strain, which could be tested experimentally.

Tang, Weichen [University of California, Berkeley,↗
DOE OSTI2021

Temperature dependence of quantum oscillations from non-parabolic dispersions

The phase offset of quantum oscillations is commonly used to experimentally diagnose topologically nontrivial Fermi surfaces. This methodology, however, is inconclusive for spin-orbit-coupled metals where π -phase-shifts can also arise from non-topological origins. Here, we show that the linear dispersion in topological metals leads to a T 2 -temperature correction to the oscillation frequency that is absent for parabolic dispersions. We confirm this effect experimentally in the Dirac semi-metal Cd 3 As 2 and the multiband Dirac metal LaRhIn 5 . Both materials match a tuning-parameter-free theoretical prediction, emphasizing their unified origin. For topologically trivial Bi 2 O 2 Se, no frequency shift associated to linear bands is observed as expected. However, the π -phase shift in Bi 2 O 2 Se would lead to a false positive in a Landau-fan plot analysis. Our frequency-focused methodology does not require any input from ab-initio calculations, and hence is promising for identifying correlated topological materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Low Thermal Conductivity in Heteroanionic Materials with Layers of Homoleptic Polyhedra

Although BiAgOSe, an analogue of a well-studied thermoelectric material BiCuOSe, is thermodynamically stable, its synthesis is complicated by the low driving force of formation from the stable binary and ternary intermediates. Here we have developed a “subtraction strategy” to suppress byproducts and produce pure phase BiAgOSe using hydrothermal methods. Electronic structure calculations and optical characterization show that BiAgOSe is an indirect bandgap semiconductor with a bandgap of 0.95 eV. The prepared sample exhibits lower lattice thermal conductivities (0.61 W·m –1 ·K –1 at room temperature and 0.35 W·m –1 ·K –1 at 650 K) than BiCuOSe. Further, lattice dynamical simulations and variable temperature diffraction measurements demonstrate that the low lattice thermal conductivity arises from both the low sound velocity and high phonon–phonon scattering rates in BiAgOSe. These in turn result primarily from the soft Ag–Se bonds in the edge-sharing AgSe 4 tetrahedra and large sublattice mismatch between the quasi-two-dimensional [Bi 2 O 2 ] 2+ and [Ag 2 Se 2 ] 2– layers. These results highlight the advantages of manipulating the chemistry of homoleptic polyhedra in heteroanionic compounds for electronic structure and phonon transport control.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Massive Suppression of Proximity Pairing in Topological ( Bi 1 - x Sb x ) 2 Te 3 Films on Niobium

Interfacing bulk conducting topological Bi 2 Se 3 films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. Yet, bulk insulating topological (Bi 1-x Sb x ) 2 Te 3 films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is shown by ultrahigh-resolution band mappings and by contrasting quantified superconducting gaps with those of heavily n-doped topological Bi 2 Se 3 /Nb. The results underscore the limitations of using superconducting proximity effects to realize topological superconductivity in nearly intrinsic systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Exploring the Feasibility and Performance of Perovskite/Antimony Selenide Four-Terminal Tandem Solar Cells

The tandem solar cell presents a potential solution to surpass the Shockley–Queisser limit observed in single-junction solar cells. However, creating a tandem device that is both cost-effective and highly efficient poses a significant challenge. In this study, we present proof of concept for a four-terminal (4T) tandem solar cell utilizing a wide bandgap (1.6–1.8 eV) perovskite top cell and a narrow bandgap (1.2 eV) antimony selenide (Sb 2 Se 3 ) bottom cell. Using a one-dimensional (1D) solar cell capacitance simulator (SCAPS), our calculations indicate the feasibility of this architecture, projecting a simulated device performance of 23% for the perovskite/Sb 2 Se 3 4T tandem device. To validate this, we fabricated two wide bandgap semitransparent perovskite cells with bandgaps of 1.6 eV and 1.77 eV, respectively. These were then mechanically stacked with a narrow bandgap antimony selenide (1.2 eV) to create a tandem structure, resulting in experimental efficiencies exceeding 15%. The obtained results demonstrate promising device performance, showcasing the potential of combining perovskite top cells with the emerging, earth-abundant antimony selenide thin film solar technology to enhance overall device efficiency.

14 SOLAR ENERGY↗
DOE OSTI2020

One-dimensional antilocalization of electrons from spin disorder probed by nonlinear Hall effect

In recent years, nonreciprocal transport measurement has emerged as a probe of spin orbit interaction, spin texture, superconductivity, and other fundamental properties of materials. Here, we study the nonlinear Hall effect (NLHE) in Bi 2 Se 3 /CoFeB heterostructures measured by second harmonic voltage method. Magneto-optical Kerr effect measurements demonstrate the origin of the NLHE to be the asymmetric magnon scattering mechanism. Moreover, a linear relation between the nonlinear Hall resistance and the electron phase coherence length of Bi 2 Se 3 is observed between 5 and 50 K. In this work, we propose a phenomenological model that explains the enhancement of the NLHE below 50 K as a result of one-dimensional antilocalization of electrons from spin disorder, enabled by spin-momentum locking and conservation of angular momentum.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Achieving the 1D Atomic Chain Limit in Van der Waals Crystals

Experiments with graphene have demonstrated that 2D van der Waals materials can be stable, robust, and efficiently manipulated at the level of individual atomic planes. However, the stability and manipulation of 1D van der Waals materials and individual atomic chains remains elusive. Here, in this work, the ability to exfoliate and process two representative van der Waals materials containing 1D motifs, namely MoI 3 and Ta 2 Se 8 I, at the scale of individual atomic chains is demonstrated. High‐resolution transmission electron microscopy and atomic force microscopy studies confirm the presence of stable individual atomic chains of MoI 3 at room temperature. It is further shown that 1D van der Waals materials with low exfoliation energy, such as Ta 2 Se 8 I, can be processed with electron beams to achieve suspended individual atomic chains. Ab initio calculations corroborate the findings regarding the cleavage energies and the thermodynamic stability of individual atomic chains in these 1D van der Waals materials. These results demonstrate that the top‐down approach in material processing can be extended to the scale of individual chains.

1D materials↗
DOE OSTI2022

Large bilinear magnetoresistance from Rashba spin-splitting on the surface of a topological insulator

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of topological insulators (TIs). Here, in this paper, we report the observation of large bilinear magnetoresistance (BMR) in Bi 2 ⁢Se 3 films decorated with transition-metal atoms. The magnitude of the BMR sensitively depends on the type and amount of atoms deposited, with a maximum achieved value close to those of strong Rashba semiconductors. Our first-principles calculations reproduce the quantum well states and reveal sizable RSS in all Bi 2 ⁢Se 3 heterostructures with broken inversion symmetry. Our results show that charge-spin interconversion through RSS states in TIs can be fine tuned through surface atom deposition and easily detected via BMR for potential spintronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Emergence of Moiré Dirac Fermions at the Interface of Topological and 2D Magnetic Insulators

Dirac Fermions on the surface of the topological insulator are spin-momentum locked and topologically protected, making them interesting for spintronics and quantum computing applications. When in proximity to magnetism and superconductivity, these electronic states could result in quantum anomalous Hall effect and Majorana Fermions, respectively. An even more dramatic enrichment of the topological insulators’ physics is expected for moiré superlattices, where, analogously to the twisted graphene layers, electronic correlations could be strongly enhanced, a task previously notoriously difficult to achieve in topological matter. Until now, the experimental confirmation of such moiré properties has remained elusive. Here, we grow the two-dimensional van der Waals magnetic insulators FeX 2 (where X = Cl or Br) on top of the topological insulator Bi 2 Se 3 and establish a moiré superlattice formation at the interface. By means of scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we investigate the electronic properties of the formed moiré superlattice and demonstrate its tunability via the film choice. We reveal replicated Dirac cones and focus on their intersections, which, in the case of FeBr 2 /Bi 2 Se 3 , occur below the Fermi level. We identify the signatures of small gaps at the intersections around the M̅ i points that we attribute to the moiré interaction. These findings point to the specific type of magnetic moiré potential that breaks the time-reversal symmetry at these points but not at the $\barΓ$ point. Our observations provide an intriguing scenario of correlated topological phases induced by moiré superlattice that may result in topological superconductivity, high Chern number phases, and exotic noncollinear magnetic textures.

2D magnets↗
DOE OSTI2022

Spinor $GW$ Bethe-Salpeter calculations in BerkeleyGW: Implementation, symmetries, benchmarking, and performance

Computing the GW quasiparticle band structure and Bethe-Salpeter equation (BSE) absorption spectra for materials with spin-orbit coupling have commonly been done by treating GW corrections and spin-orbit coupling (SOC) as separate perturbations to density-functional theory. However, accurate treatment of materials with strong spin-orbit coupling (such as many topological materials of recent interest, and thermoelectrics) often requires a nonperturbative approach using spinor wave functions in the Kohn-Sham equation and GW/BSE. Such calculations have only recently become available, in particular for the BSE. Here, we have implemented this approach in the plane-wave pseudopotential GW/BSE code BerkeleyGW, which is highly parallelized and widely used in the electronic-structure community. We present reference results for quasiparticle band structures and optical absorption spectra of solids with different strengths of spin-orbit coupling, including Si, Ge, GaAs, GaSb, CdSe, Au, and Bi 2 Se 3 . The calculated quasiparticle band gaps of these systems are found to agree with experiment to within a few tens of meV. SOC splittings are found to be generally in better agreement with experiment, including quasiparticle corrections to band energies. The absorption spectrum of GaAs is not significantly impacted by the inclusion of spin-orbit coupling due to its relatively small value (0.2 eV) in the Λ direction, while the absorption spectrum of GaSb calculated with the spinor GW/BSE captures the large spin-orbit splitting of peaks in the spectrum. For the prototypical topological insulator Bi 2 Se 3 , we find a drastic change in the low-energy band structure compared to that of DFT, with the spinorial treatment of the GW approximation correctly capturing the parabolic nature of the valence and conduction bands after including off-diagonal self-energy matrix elements. We present the detailed methodology, approach to spatial symmetries for spinors, comparison against other codes, and performance compared to spinless GW/BSE calculations and perturbative approaches to SOC. This work aims to spur further development of spinor GW/BSE methodology in excited-state research software and enables a more accurate and detailed exploration of electronic and optical properties of materials containing elements with large atomic numbers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous–crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In 2 Se 3 ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer “shear glide” and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline–crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. Finally, the nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In 2 Se 3 -covered layer, resulted from the combinations of material absorption and scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Activation of anionic redox in d 0 transition metal chalcogenides by anion doping

Expanding the chemical space for designing novel anionic redox materials from oxides to sulfides has enabled to better apprehend fundamental aspects dealing with cationic-anionic relative band positioning. Pursuing with chalcogenides, but deviating from cationic substitution, we here present another twist to our band positioning strategy that relies on mixed ligands with the synthesis of the Li 2 TiS 3-x Se x solid solution series. Through the series the electrochemical activity displays a bell shape variation that peaks at 260 mAh/g for the composition x = 0.6 with barely no capacity for the x = 0 and x = 3 end members. We show that this capacity results from cumulated anionic (Se 2– /Se n– ) and (S 2– /S n– ) and cationic Ti 3+ /Ti 4+ redox processes and provide evidence for a metal-ligand charge transfer by temperature-driven electron localization. Moreover, DFT calculations reveal that an anionic redox process cannot take place without the dynamic involvement of the transition metal electronic states. These insights can guide the rational synthesis of other Li-rich chalcogenides that are of interest for the development of solid-state batteries.

25 ENERGY STORAGE↗
DOE OSTI2023

Non-volatile electric control of magnetic and topological properties of MnBi 2 Te 4 thin films

In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi 2 Te 4 on ferroelectric In 2 Se 3 or In 2 Te 3 , where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi 2 Te 4 and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Generation of out-of-plane ferroelectric behavior in a one-atom-thick monolayer

Ferroelectricity with out-of-plane polarization has so far been found in several two-dimensional (2D) materials, including monolayers comprising three to five planes of atoms, e.g. α-In 2 Se 3 and MoTe 2 . Here, we explore the generation of out-of-plane polarization within a one-atom-thick monolayer material, namely hexagonal boron nitride. We performed density-functional-theory calculations to explore inducing ferroelectric-like distortions through incorporation of isovalent substitutional impurities that are larger than the host atoms. This disparity in bond lengths causes a buckling of the h-BN, either up or down, which amounts to a dipole with two equivalent energies and opposing orientations. We tested several impurities to explore the magnitude of the induced dipole and the switching energy barrier for dipole inversion. The effects of strain, dipole–dipole interactions, and vertical heterostructures with graphene are further explored. Our results suggest a highly-tunable system with ground state antiferroelectricity and metastable ferroelectricity. Finally, we expect that this work will help foster new ways to include functionality in layered 2D-material-based applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Influence of Copper Composition on Cu 2 BaSn(S,Se) 4 Solution-Deposited Films and Photovoltaic Devices with Over 5% Efficiency

Cu 2 BaSn(S,Se) 4 is currently in the spotlight for prospective environmentally friendly, stable, thin-film solar cell application, with demonstrated device power conversion efficiency (PCE) exceeding 5% for vacuum-deposited absorbers. As suggested by first-principles calculations, experimental studies involving related Cu 2 ZnSn(S,Se) 4 and Cu(In,Ga)(S,Se) 2 absorbers prove that the detailed chemical composition typically plays a sensitive role in altering defects and electronic properties of these complicated compound semiconductors. Herein, the copper composition of Cu 2 BaSn(S,Se) 4 has been systematically modified, employing a solution-based deposition approach, to provide a more complete picture of the phase stability and optoelectronic property sensitivity for this material. X-ray diffraction and scanning electron microscopy show that phase purity is preserved over a film Cu content range of nominally 0.94 ≤ [Cu]/[Ba + Sn] ≤ 1.01. Terahertz spectroscopy and Hall effect measurements reveal that the majority carrier hole density of ~10 13 cm –3 and mobility (~5 cm 2 /V s), as well as the minority carrier lifetime (a bulk lifetime of 180 ps and a surface recombination velocity >106 cm/s), are nominally independent of Cu content. The champion PCEs exceed 4.7% for all copper compositions in the phase-pure region, with a record value of 5.1%, similar to the reported values for record vacuum-deposited devices. Furthermore, these results suggest that Cu 2 BaSn(S,Se) 4 films and solar cells (at the current performance level) may be less sensitive to Cu stoichiometry compared to kesterite materials and therefore may provide a more stable material platform to prepare thin-film solar cells.

(CBTSSe)↗