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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

SiC compatibility

SiC is a relatively chemically stable ceramic that has potential use in the extreme environments present in nuclear reactors. Reactions with high temperature steam, He, hydrothermal, molten salts, and liquid metals are some of the possible environments that SiC could be exposed to. While it is very stable in air, aqueous environments and very low oxygen partial pressures can lead to SiC recession. Generally, SiC does not react with the FliNaK or FliBe molten salts, or liquid metals, however contaminants in these working fluids leached from other materials can cause reaction layers to occur. Most of these systems require additional testing under neutron irradiation to determine if there are any combined effects.

Mouche, Peter↗
DOE OSTI2022

Additive manufacturing of complexly shaped SiC with high density via extrusion-based technique – Effects of slurry thixotropic behavior and 3D printing parameters

Here, additive manufacturing of dense SiC parts was achieved via an extrusion-based process followed by electrical-field assisted pressure-less sintering. The aim of this research was to study the effect of the rheological behavior of SiC slurry on the printing process and quality, as well as the influence of 3D printing parameters on the dimensions of the extruded filament, which are directly related to the printing precision and quality. Different solid contents and dispersant- Darvan 821A concentrations were studied to optimize the viscosity, thixotropy and sedimentation rate of the slurry. The optimal slurry was composed of 77.5 wt% SiC, Y 2 O 3 and Al 2 O 3 powders, 0.25 wt% dispersant and 0.01 wt% defoamer. The printing parameters studied included extrusion pressure, nozzle size, layer height and printing speed; the one that had the most prominent effect on filament width and height was indicated as layer height. The nozzle inner diameter of 1.04 mm, speed of 350 mm/min, layer height of 0.7 mm and extrusion air pressure of 0.31 MPa were the optimal printing parameters. Furthermore, the relationship between the printing parameters and the filament dimensions was successfully predicted by using machine learning and grey system theory. Finally, the relative density of the printed SiC parts sintered at 1900 oC reached 94.7±1.5%.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Erosion resistance test of SiC mirror sample for ITER divertor VUV spectrometer

A series of tests have been performed to validate the resistance of the Silicon Carbide (SiC) mirror as the first mirror material of ITER VUV spectrometers to all ITER environmental conditions. Here we focused on the erosion (and deposition) of the SiC mirror sample caused by high-energy neutral particles. The flux of neutral particles reaching the first mirror was calculated using the ZEMAX software with a simplified entrance duct model. In the calculation, the particle flux reaching the first wall is necessary and the previously reported values derived from the SOLPS calculations were used. Based on this estimated particle flux, the erosion resistance tests were performed to check the erosion effect due to the high-energy neutral particles on the first mirror of ITER divertor VUV spectrometer. In the experiment, erosion was induced by exposing the SiC mirror sample to hydrogen and deuterium plasmas (and ions). The target fluence of incident ions in experiment is based on the estimation of the flux of neutral particles in ITER. The surface shape, composition, erosion depth, and surface roughness were measured to check the damage of the mirror surface after erosion test. Based on simulations and erosion resistance tests, it was concluded that the SiC mirror can be used as the first mirror of ITER divertor VUV spectrometer.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Characterization of fusion welded ceramics in the SiC-ZrB 2 -ZrC system

Various SiC-ZrB 2 -ZrC ceramics were joined by fusion welding to determine the maximum silicon carbide content that could be joined. Commercial powders were hot pressed, machined, and preheated to 1450 °C before joining with a tungsten inert gas welding torch at 160–200 A. Resulting welds were cross-sectioned and analyzed to determine which compositions were weldable and to characterize microstructural evolution in welded samples. As compositions approached the ternary eutectic, the welds had smaller SiC grains and exhibited better weldability. Penetration depth of welds was controlled by a combination of current input and welding speed. Here, the ternary eutectic in the system was found at 36.9 ± 1.3 vol% SiC, 42.7 ± 1.5 vol% ZrB 2 , and 20.4 ± 1.9 vol% ZrC and its melting temperature was 2330 ± 23 °C. A ternary phase diagram for the SiC-ZrB 2 -ZrC was constructed and proposed via microstructural analysis of arc melted pellets on binary joins between each binary eutectic and the ternary eutectic in the system.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Corrosion behavior of a series of combinatorial physical vapor deposition coatings on SiC in a simulated boiling water reactor environment

Here, the simulated boiling water condition corrosion properties of multilayer and combinatorial physical vapor deposition metal coatings (Zr, Cr, and/or Ti) deposited on a SiC f -SiC composite were investigated. Various compositions within the ternary system were corroded to the most suitable composition preventing underlying SiC f -SiC from further attack. Mass measurements and visual observations were conducted to identify which coatings formed protective oxides and which coatings spalled. Transmission electron microscopy was conducted to observe the microstructure of the physical vapor deposition metal layer before and after corrosion as well as identify the oxide which were forming.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Failure analysis of nuclear transient-tested UN tristructural isotropic fuel particles in a 3D printed SiC matrix

Fully ceramic microencapsulated fuel elements containing UN tristructural isotropic (TRISO) fuel particles within a 3D printed SiC matrix were subjected to transient testing with varying energy depositions. Detailed post-irradiation examinations were performed, including leaching in hot HNO3 and post-leaching X-ray computed tomography, to quantify the percentage of failed TRISO particles and crack propagation within the particles and surrounding fuel matrix. In parallel, detailed finite element analyses were performed for comparison with experimental findings and to better evaluate transient failure modes. The lowest transient energy deposition—which still exceeded bounding values for high-temperature gas-cooled reactor applications—resulted in no detectable TRISO particle failures or matrix cracking, which was consistent with the simulations. Simulations of the higher-energy transients for which significant TRISO particle failure was expected were generally able to reproduce the transient temperatures and matrix cracking. Thus, the TRISO particle failures were explained based on the effects of local SiC matrix thickness and porosity. Results generally confirmed the high strength of the additively manufactured SiC matrix but also affirmed the need for a modified UN TRISO architecture to prevent SiC matrix cracks from propagating through TRISO layers. This unique failure mode has not historically been considered for TRISO fuels contained in weaker graphite matrices.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide (SiC) [Zhao, J. Nature 2024, 625 (7993), 60−65, 10.1038/s41586-023-06811-0] provided an important step toward integration of the graphene-based system into active components in postsilicon micro- and nanoelectronics. However, the exact atomic-scale structure and complex bonding configurations of the first epitaxial graphene carbon layer (C buffer ) remain an open problem. Our recent report [Kolmer, M. Communications Physics 2024, 7 (1), 16, 10.1038/s42005-023-01515-3] has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the C buffer –SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Bias voltage and epitaxial graphene thickness-dependent characterization of the collective C buffer –SiC interface showed that “Si” vacancy sites beneath C buffer are stable under STM electric fields. Moreover, the vacancies introduce localized electronic states below the Fermi level, thereby enhancing the charge-transfer phenomenon across the interface.

Thupakula, Umamahesh [Ames Laboratory (AMES), Ames↗
DOE OSTI2019

Revealing interfacial disorder at the growth-front of thick many-layer epitaxial graphene on SiC: a complementary neutron and X-ray scattering investigation

Epitaxial graphene on SiC provides both an excellent source of high-quality graphene as well as an architecture to support its application. Although single-layer graphene on Si-face SiC has garnered extensive interest, many-layer graphene produced on C-face SiC could be significantly more robust for enabling applications. Little is known, however, about the structural properties related to the growth evolution at the buried interface for thick many-layer graphene. Using complementary X-ray scattering and neutron reflectivity as well as electron microscopy, we demonstrate that thick many-layer epitaxial graphene exhibits two vastly different length-scales of the buried interface roughness as a consequence of the Si sublimation that produces the graphene. Over long lateral length-scales the roughness is extremely large (hundreds of Å) and it varies proportionally to the number of graphene layers. In contrast, over much shorter lateral length-scales we observe an atomically abrupt interface with SiC terraces. Graphene near the buried interface exhibits a slightly expanded interlayer spacing (~1%) and fluctuations of this spacing, indicating a tendency for disorder near the growth front. Nevertheless, Dirac cones are observed from the graphene while its domain size routinely reaches micron length-scales, indicating the persistence of high-quality graphene beginning just a short distance away from the buried interface. Discovering and reconciling the different length-scales of roughness by reflectivity was complicated by strong diffuse scattering and we provide a detailed discussion of how these difficulties were resolved. The insight from this analysis will be useful for other highly rough interfaces among broad classes of thin-film materials.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

Direct printing of metal contacts on 4H-SiC for radiation detection

Additive manufacturing (AM) has created the possibility of replacing traditional manufacturing techniques with faster, versatile and cost-effective production options. Here, we employed AM techniques to fabricate silicon carbide (SiC) radiation detectors based on commercial 4H-SiC wafers. Platinum (Pt) nanoparticle inks were synthesized and printed onto the surface of a 4H-SiC wafer using an aerosol jet printing technique to create Schottky diodes for radiation detection. The additive printed detectors were characterized for surface morphology through a scanning electron microscope (SEM) and atomic force microscope (AFM), and electronically by current-voltage (IV), capacitance-voltage (CV) and finally by alpha spectroscopy measurements. Lastly, the printed detector achieved an energy resolution of 3.24% FWHM at 5.486 MeV, compared to 0.62% FWHM of a SiC detector fabricated by conventional clean room technologies and 0.3% FWHM of a commercially available Si detector.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

In this work, a high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μ m-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. Furthermore, the turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

42 ENGINEERING↗
DOE OSTI2025

Computationally guided experimental validation of divacancy defect formation in 4H-SiC

Recent research into solid-state qubits for quantum information science has focused on optically addressable spin defects such as the negatively charged nitrogen-vacancy center in diamond and the neutrally charged divacancy (VV) in 4H-SiC as scalable quantum sensors and networking qubits. Within this context, direct investigations of the structural origin and defect formation dynamics of a sub-set of the VV center in 4H-SiC remain lacking. Here, we take a systematic experimental approach guided by predictions from first-principles simulations to gain a thorough mechanistic understanding of the VV defect formation and control in 4H-SiC. We study the effect of annealing time and temperature on VV formation in high-purity semi-insulating 4H-SiC samples following electron irradiation. Three different temperatures (1123, 1273, and 1473 K) and annealing duration (from 0.5 to 72 h) are chosen to explore VV formation in different regions. We find that samples annealed at 1273 K give the highest VV-related photoluminescence (PL) intensities, in agreement with the prediction from first-principles calculations. Furthermore, the logarithmic dependence of VV-related PL intensities on the annealing duration at 1273 K indicates that 1273 K provides sufficient thermal energy for silicon vacancy migration but not for VV migration. Together, these results suggest that efficient VV formation occurs above the V Si migration temperature and below the VV migration threshold.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Thermophysical Properties of Ti3SiC2 MAX Phase Composites with SiC Reinforcement

In the present work, dense (∼100%) Ti 3 SiC 2 composites (TSC) are processed along with 20 vol% of SiC reinforcement (TSC20) via spark plasma sintering at 1400°C, 40 MPa, 15 min, and dynamic vacuum environment. Thermal expansion of both the composites increases from RT to 1273 K and linear fitting of data yields coefficient of thermal expansion (CTE) of 9.4 × 10 −6 K −1 for TSC which decreases to 8.3 × 10 −6 K −1 for TSC20. With increase in temperature from RT to 773 K, specific heat for both TSC and TSC20 composites is observed to increase from 598-850 J.kg −1 .K −1 , whereas thermal diffusivity and thermal conductivity values decrease with testing temperature. SiC reinforcement in Ti 3 SiC 2 resulted in improved thermal diffusivity from 12.7 to 18.7 mm 2 .s −1 and thermal conductivity from ∼57 to ∼79 W.m −1 .K −1 at RT. However, with increase in temperature (773 K), thermal diffusivity and conductivity decrease, and values get closer for both TSC and TSC20 composites. Further extrapolation of thermal conductivity data showed cross-over at ∼973 K due to domination of phonon-phonon scattering and thus lower values of thermal conductivity for TSC20 than TSC. Therefore, reduced CTE and higher thermal conductivity of TSC20 make it a viable choice for applications in high temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2019

High-Temperature Creep Properties of SiC Fibers with Different Compositions

Silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites have been widely investigated for potential fusion reactor applications. In this present investigation, the high-temperature creep performance of five types of SiC fibers is evaluated and microstructural analysis is performed. The creep behavior of the fibers was assessed by the bend stress relaxation method at various applied strains at 1500°C and 1700°C. The fibers tested include developmental-grade fibers with different residual silicon amounts (~0%, 2% to 3%, and 5% to 6%) fabricated by laser chemical vapor deposition at Free Form Fibers. Generally, the creep behavior of the Free Form (FF) fibers was similar to Hi-Nicalon Type S and/Tyranno-SA SiC fibers currently used for fabrication of SiC/SiC composites for fusion applications. However, all FF fibers exhibited the formation of pores after the creep tests at 1700°C regardless of residual silicon amount, which can be improved by further development via optimization of the composition and microstructure.

Patel, Deep↗
DOE OSTI2025

Microstructural origin of high‐strength Tyranno SA4 SiC fiber studied by comparative Raman spectroscopy #

Tyranno SA4 grade SiC fiber is an emerging continuous fiber with excellent mechanical properties. The origin of the fiber's high-performance was studied by comparative Raman spectroscopy of four different grades of SiC fibers and reference SiC monolith. Analysis of the Raman spectra of fiber cross-sections, surface and homogeneity, and fibers under stress, revealed how differences in microstructure, such as crystalline order, size, and the presence of critical flaws, dictate mechanical properties. In conclusion, this information can help optimize SiC fiber manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds

The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Atomistic and mesoscale simulations to determine effective diffusion coefficient of fission products in SiC

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) particles serves as the barrier to prevent escape of fission products produced in the fuel kernel. Knowing the diffusion coefficient of fission products through SiC is critical to determining whether fission gas can escape from the particle. It has been observed in experiments that Ag accumulated in grain boundaries and triple junctions in SiC. It is hypothesized that grain boundary diffusion is the primary pathway by which fission products penetrate the SiC layer. In this report, the effective diffusion coefficient of the fission product Ag through the grain boundary network is calculated using a combination of atomistic and phase-field methods. The grain boundary diffusion coefficient is calculated using molecular dynamics simulations. The bulk diffusion coefficient is determined using a combination of density functional theory and nudged elastic band methods. An effective diffusion coefficient is calculated, accounting for the grain structure using a phase-field method. The effective diffusion coefficient will be incorporated into Bison and fission product release calculations are compared to available experimental data.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Survey and Benchmark of Benefits of High Voltage SiC Applications in Medium Voltage Power Distribution Grids

The main objective of this survey and benchmark study is to identify and document potential high-impact applications in today's and future medium voltage (MV) distribution grids that will significantly benefit from high voltage (HV) (i.e. > 3.3 kV) SiC-based power electronics equipment. In particular, it is desirable to identify applications that can utilize the high switching speed and high control bandwidth enabled by SiC-based equipment. Specifically, the benefits of using SiC are quantified through the benchmark analysis and design using simulation for the selected high-impact applications. In addition, to provide grid support services, it is necessary to consider grid requirements in the grid-connected converter's design. Therefore, the impact of grid requirements on the HV SiC-based grid-connected converter is evaluated.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1978

Beta-to-alpha transformation in polycrystalline SiC. II - Interfacial energetics

A phenomenological analysis of the energetics of the beta-to-alpha transformation in polycrystalline SiC is presented. It is found that the extreme anisotropy of the interfacial energy between alpha- and beta-SiC can account for the rapid growth of composite grains into the beta matrix during conventional sintering or hot-pressing processes. The composite grains consist of alpha-SiC plates 'sandwiched' between well-oriented and recrystallized beta-SiC 'envelopes'. The interfaces involving the 111 plane type of beta and (0001) of alpha have much lower energies than random beta/alpha interfaces.

Mitchell, T. E.↗