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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

AGR-5/6/7 Fuel Fabrication Report

The U.S. Department of Energy Office of Nuclear Energy (DOE NE) and the Idaho National Laboratory (INL) Advanced Reactor Technologies (ART) Advanced Gas Reactor (AGR) Fuel Development and Qualification program (referred to as AGR Fuel program hereafter) are pursuing qualification of tristructural isotropic (TRISO) coated particle fuel for use in high temperature gas cooled reactors (HTGRs). The AGR Fuel program was established to provide a fuel qualification data set in support of the licensing and operation of an HTGR. BWX Technologies Nuclear Operations Group (BWXT-NOG) was subcontracted to fabricate the fuel for the AGR program. Several investments and innovations were realized in preparation to fabricate fuel for the AGR-5/6/7 irradiation experiments that brought fuel fabrication fully out of the laboratory and into engineering-scale operations. These included: • Increased the kernel fabrication line capacity and uniformity • Upgraded ancillary support equipment and processes for the tristructural isotropic (TRISO) coating furnace • Demonstrated efficient production of the matrix precursor powder by dry jet milling of co mingled components • Demonstrated an engineering-scale method for quick and efficient overcoating TRISO particles with the matrix precursor • Demonstrated an automated, multi cavity compacting system with a volumetric feed system • Demonstrated a combined-cycle thermal treatment furnace These changes increased production rates of some of these processes by an order of magnitude or more while eliminating the use of flammable solvents, multiple grinding and sorting operations, and the weighing out of individual die charges. Three fuel kernel lots were fabricated for production of the fuel for AGR-5/6/7. The initial lot (J52R-16-39316) was certified to fuel specifications but was not used because the kernels had a high fraction of internal fissures that caused an unacceptable fraction of the kernels to fragment when charged to the coating furnace where the TRISO coating would be deposited. Fragmented kernels increased the dispersed uranium in the particles and produced a worrisome fraction of dimpled particles with an elevated probability of in-pile failure. After some efforts to identify the cause of the fissure formation, two additional lots were produced with much lower fissure fractions, J52R-16-69317 and 69318. The latter kernel lot was a backup to the first and was not needed. Multiple kernel batches were composited to form each of the lots so as to simulate a commercial-scale operation where kernel batches would also be composited. Multiple TRISO coating runs were performed and the product characterized so that several could be composited into a TRISO lot. TRISO lot J52R-16-98005 conformed to all fuel specifications except the mean outer pyrocarbon (OPyC) layer thickness was thinner than specified. Furthermore, it was determined that the TRISO lot had a dispersed uranium fraction (DUF) that might result in the compacts not meeting the DUF specification. A review of the role of the OPyC layer and consequences of the DUF by the Technical Coordination Team and INL concluded that the fuel was acceptable for use in the AGR-5/6/7 irradiation experiment. The TRISO particles were overcoated with the matrix precursor that had been produced in a jet-milling operation. The overcoating was performed in equipment originally designed to coat pharmaceuticals. The overcoating process performed well; producing highly spherical and uniform overcoats requiring little upgrading and no recycle or rework. TRISO particles were overcoated with the matrix precursor to achieve nominal volumetric packing fractions (PFs) of TRISO particles of 25% and 40% for the irradiation experiments. The 40% PF compacts occupy the first and fifth test capsule in the test train while the inner three capsules are loaded with 25% PF compacts. The resinated graphite matrix precursor powder was a derivative of the German A3-27 matrix formulation, which differs from previous AGR irradiation campaigns that used an A3-3 formulation. Jet milling of the matrix powder precursor produced a finer mean graphite particle size than the milling operations used for the A3-3 matrix powder precursor. Changes made in the matrix formula and equipment yielded compacts with significantly higher matrix density than was attained in previous AGR irradiation campaigns. The changes in the matrix formulation and the means of milling the powders also complicated resolution of the three fuel compact defect fractions, DUF, exposed kernel fraction (EKF), and the silicon carbide defect fraction (SDF). Characterization data from BWXT-NOG had some anomalous results, so samples of the fuel compacts and overcoated TRISO particles were also analyzed by Oak Ridge National Laboratory (ORNL) to ensure that the defect fractions were accurately characterized.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

SiC as a core-edge integrated wall solution in DIII-D

Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Z eff , across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Z eff , potentially by as much as ~50%. It is discussed how SiC may be expected to "self-condition" and create wall conditions similar to siliconization, further lowering Z eff due to efficient oxygen gettering. Furthermore, the potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Additive manufacturing and testing of a ceramic heat exchanger for high-temperature and high-pressure applications for concentrating solar power

Heat exchangers with excellent corrosion and oxidation resistances are essential for the next-generation concentrating solar power (CSP) plants using a molten salt heat transfer fluid and a supercritical CO 2 Brayton power cycle that can operate at temperatures > 700 °C for higher efficiencies. Techniques were developed for additively manufacturing ceramic materials for applications involving high temperature, high pressure, and high corrosion resistance as needed for the CSP application. Based on a previous ceramic heat exchanger design with its cross-section geometry of the flow channels optimized for heat transfer and mechanical strength, lab-scale prototype heat exchangers, with integrated headers and incorporated flow channel dimensional compensations, were fabricated by using the binder jetting process. The printed prototype heat exchangers were successfully densified through the processes of liquid polymer infiltration and pyrolysis. In addition, thermophysical properties of the densified silicon carbide parts were measured to provide necessary design information. Experimental heat transfer testing of the lab-scale prototype heat exchanger was conducted, and the experimental data agreed reasonably well with the simulated results. Furthermore, this agreement provides validation of the simulation models for their applicability to the development of a full-scale ceramic heat exchanger.

14 SOLAR ENERGY↗
DOE OSTI2024

Thermal Management of Wide-Bandgap Semiconductor Amplifiers Used for Plasma Heating and Control

Princeton Fusion Systems (PFS) has designed, built, and tested a Load Switch printed circuit board (PCB) to demonstrate the capabilities of 2 kV silicon carbide (SiC) cascodes in development by Qorvo towards plasma heating and control applications. Initial tests have been conducted at low power (~100 W) for validation with thermal finite element analysis (FEA) modeling performed by the National Renewable Energy Laboratory (NREL). Comparisons of experimental data with the thermal modeling results, along with considerations for operating in plasma systems, will be discussed.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2020

Electronic stopping in molecular dynamics simulations of cascades in 3C–SiC

Here, we investigate the effect of the electronic stopping power on defect production due to ion irradiation of cubic silicon carbide using molecular dynamics simulations. We simulate 20 keV and 30 keV Si and C ions, with and without the electronic energy loss. The results show that the electronic stopping effects are more profound in the case of C irradiation, where the ratio of the electronic energy loss S e to the nuclear energy loss S n is much larger compared to the ratio for Si ions. These findings indicate that this ratio plays a role in the effect of the electronic stopping on ion irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A Reliable, Cost-Effective Transformerless Medium-Voltage Inverter for Grid Integration of Combined Solar and Energy Storage

The goal of this project is to utilize an innovative holistic power electronic inverter design approach, which can leverage best-in-class silicon carbide (SiC) power modules, novel multi-level power electronic circuits, high frequency transformers, switching sequence based control and co-designed electro-thermal management methods, to realize a 300 kW transformerless medium-voltage (MV) inverter system. The system cost of the inverter is considered as a primary design objective alongside high power density, efficiency, low electromagnetic interference (EMI) and long lifespan. This design-oriented research activity, especially the proposed multi-objective optimization approach, will have broad impacts in holistic power electronic system design methods and in technologies that can be commercialized into a wide variety of wide bandgap power electronic applications.

14 SOLAR ENERGY↗
DOE OSTI2021

Benefits of high-voltage SiC-based power electronics in medium-voltage power-distribution grids

Medium-voltage (MV) power electronics equipment has been increasingly applied in distribution grids, and high-voltage (HV) silicon carbide (SiC) power semiconductors have attracted considerable attention in recent years. This paper first overviews the development and status of HV SiC power semiconductors. Then, MV power-converter applications in distribution grids are summarized and the benefits of HV SiC in these applications are presented. Microgrids, including conventional and asynchronous microgrids, that can fully demonstrate the benefits of HV SiC power semiconductors are selected to investigate the benefits of HV SiC in detail, including converter-level benefits and system-level benefits. Finally, an asynchronous microgrid power-conditioning system (PCS) prototype using a 10 kV SiC MOSFET is presented.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability

In this paper, the concept and prototype of an aging detector for silicon carbide (SiC) power metal oxide semiconductor field effect transistor (MOSFET) are proposed and described. It leverages the resonant peak values of gate-source voltage at different instants during the switching transients to decode the change of multiple aging indicators, such as the increases of on-state resistance and threshold voltage. Modeling-based analysis is conducted to support the idea. The detector can be fully integrated into gate drivers without any additional connection to the power stage and is functional during normal power stage operation. A prototype unit was built, and preliminary tests were conducted to validate the idea and the practicality of the detector.

aging↗
DOE OSTI2020

Why Wideband Gap Needs Techno-Economics

The wideband gap community when discussing projects antidotally refers to the cost of the technology, frequently noting the higher wideband gap upfront cost in comparison to the incumbent state of art. Other technologies such as photovoltaics have embraced techno-economics analysis (TEA) as a method of analytically articulating the impacts of research advancements on system performance and lifetime costs. Our TEA shows the potential impact of research advancements on Gallium Oxide (Ga2O3) and Silicon Carbide (SiC) wafer manufacturing cost, the impact on the levelized cost of electricity (LCOE) when using a SiC based solar inverter, and lastly how the high cost of devices (SiC in this case) can be offset by other system cuts, such as the footprint and cooling reductions in a 1MW variable frequency motor drive. The specific goal is to show analytically the lifetime cost and performance benefits of adopting wideband gap technology whether it is at the device level or it is cumulative benefit though a simplified balance of system.

14 SOLAR ENERGY↗
DOE OSTI2023

SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm 2

Thermal management has become a major barrier in the development of high-power micro-devices. Microchannel heat sinks (MCHS) are a promising method to dissipate high heat fluxes from high power density devices. Reducing the thermal resistance will reduce the temperature increase of the electronic device, allowing for higher powers to be achieved while maintaining a safe operating temperature. This paper reports on the use of silicon carbide (Sic) microchannels to dissipate high heat fluxes up to 1 kW/cm 2 over a footprint of 0.25 cm 2 . The use of high aspect ratio and decreased hydraulic diameter channels has allowed for very low thermal resistances to be achieved at higher heat duties compared to previous studies. The experiments performed resulted in heater temperatures of less than 60 °C and thermal resistances as low as 0.024 cm 2 . ° $C$/W between the heater surface and fluid inlet temperature. In conclusion, the demonstrated thermal performance of the SiC MCHS is an encouraging means for dissipating heat from high power density microelectronic devices.

42 ENGINEERING↗
DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Neutronic Consideration of TREAT Facility Fuel SiC Recladding

The Transient Reactor Test (TREAT) Facility is an air-cooled reactor composed of graphite-urania fuel encapsulated in zirconium alloy canisters and surrounded by ~2 ft (~61 cm) of nuclear grade graphite. The primary role of TREAT is to provide in-pile nuclear-heated safety research via transient testing [1]. Benchmark efforts have demonstrated sensitivity of TREAT neutronics models to graphite cross section data and key neutron poisons found in the fuel assemblies [2]. During fabrication of TREAT fuel assemblies, a small concentration of boron was inadvertently introduced with variable concentration into the aggregate of fuel blocks prepared for TREAT use. The concentration of boron, and its respective uncertainty, represent the most sensitive component in a neutronics study; unfortunately, nothing can be done to reduce or otherwise mitigate its impact. Hydrogen in the fuel blocks reduces the mean free path of the core and its true quantity and uncertainty is approximated. The hydrogen remains from pitch binder used in the fuel fabrication process and was not completely released due to incomplete fuel graphitization. Destructive fuel testing is necessary to quantify the actual hydrogen content and to improve benchmark model quality. A third neutron poison of some significance is the hafnium impurity in the Zircaloy-3 (Zry-3) assembly cladding. The quantity of hafnium is expected to be within nominal manufacturing limits for nuclear grade zircaloy. Recladding the fuel assemblies with material that is less neutron absorbing is expected to benefit reactor neutron economy. Moreover, TREAT’s total transient energy is restricted based on the rate of Zry-3 oxidation in TREAT’s air coolant environment. Hence, cladding with more benign air reaction kinetics could dramatically uprate the facility’s experimental capability. Silicon carbide (SiC) has been proposed as a candidate material for recladding TREAT assemblies, as SiC/SiC demonstrate favorable properties within nuclear environments [3]. The current operational limits of TREAT are restricted by the oxidation of Zry-3. Change of the cladding to SiC could feasibly double the current temperature limitation. Recladding opportunities allow for previously damaged fuel assemblies to be returned to service, as Zry-3 is not commercially available. The initial effort required to consider proceeding with any recladding effort is to neutronically characterize key reactor parameters while replacing Zry-3 with SiC. A characterization summary, with respective results, is provided herein.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Thermal Management for Planar Package Power Electronics (CRADA Final Report)

The National Renewable Energy Laboratory (NREL) and John Deere Electronic Solutions (JDES) collaborated to develop and evaluate computer models and simulations related to the thermal performance of semiconductor device packaging for an inverter of an off-road vehicle ("Semiconductor Packaging"). The objective of the research was for NREL and JDES to develop a two or three-dimensional computer-aided design model of the Semiconductor Packaging ("Computer Model") for thermal performance evaluation in a simulation. The project developed computer models of a Semiconductor Package of silicon-carbide semiconductor devices with appropriate thermal dissipation via one or more of the following thermal features: a double-sided planar cooling configuration, an air-cooled configuration, a liquid-cooled configuration for off-road inverter applications in a relevant simulated operating environment. It is noted that surface area and prototype product embodiment consisting of air-cooled and liquid-cooled configurations may and may not be in direct contact with power semiconductor chips. The idea was to explore and develop packaging and thermal management technology for power semiconductors that was most effective in the performance yet had least burden in overall product cost for a given application.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter

High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-kV silicon carbide MOSFET in medium-voltage (MV) application. Design considerations, including insulation scheme, high-voltage-insulated transformer design, and load voltage regulation scheme, are proposed. In addition, the performance of the secondary-side-regulated (SSR) GDPS and that of the primary-side-regulated (PSR) GDPS are compared for several aspects, including interwinding capacitance, load voltage regulation rate, conversion efficiency, and hardware complexity. Finally, an SSR GDPS and a PSR GDPS, with an insulation voltage of 20 kV, are built in the lab. Furthermore, the test results demonstrate that the PSR GDPS is more preferable because of lower interwinding capacitance, lower load voltage regulation rate, higher conversion efficiency, and simpler control circuit.

42 ENGINEERING↗
DOE OSTI2022

Improved Double Pulse Test for Accurate Dynamic Characterization of Medium Voltage SiC Devices

This article presents an improved double pulse test (DPT) for accurate dynamic characterization of the medium voltage (MV) silicon carbide device. The difference between low voltage (LV) and MV DPT setup grounding is first introduced, which results in different measurement considerations. Then, parasitic capacitances in the DPT and their impact on the DPT are discussed considering different grounding points and device connections. Approaches are proposed to minimize the impact of parasitic capacitances on DPT results. In addition, the impact of switching V-I timing alignment on the testing results is discussed, compared to that in the LV DPT; a V-I alignment approach is introduced for the MV DPT. A 10 kV/20 A SiC mosfet -based DPT is taken as an example of the improved DPT, and test results show that it can minimize the impact from parasitic and improve the accuracy of the device switching loss estimation.

42 ENGINEERING↗
DOE OSTI2021

Evaluation of Low-Pressure-Sintered Multi-Layer Substrates for Medium-Voltage SiC Power Modules: Preprint

Direct-bonded aluminum (DBA) multi-layer substrates have been fabricated using low-pressure silver sintering. These multi-layer substrates can be used to reduce the peak electric field strength inside power modules. This benefit is particularly important for medium-voltage silicon carbide (SiC) MOSFETs due to their higher operating voltages. The voiding content and defect density of the bond used to create the multi-layer substrate stackup is critical to the thermal performance and reliability of the power module. This work two low-pressure-assisted sintering techniques; one using nano-silver preform and the other using nano-silver paste to bond 23 mm by 49 mm DBA substrates. Scanning acoustic microscopy (C-SAM) is used to evaluate the bond quality after sintering. To evaluate the reliability of the sintered multi-layer substrates, passive thermal cycling from –40 °C to 200 °C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1,000 thermal cycles, minor cracking was observed, but no failures have occurred.

28 EE - Advanced Manufacturing Office (EE-5A)↗
DOE OSTI2021

Dynamic Probabilistic Risk Assessment Based Response Surface Approach for FLEX and Accident Tolerant Fuels for Medium Break LOCA Spectrum

After the Fukushima Daiichi Accident, the safety features such as accident tolerant fuel (ATF) and diverse and flexible coping strategies (FLEX) for existing nuclear fleets are being investigated by the US Department of Energy under the Light Water Reactor Sustainability Program. This research is being conducted to quantify the risk-benefit of these safety features. Dynamic probabilistic risk assessment (DPRA)-based response-surface approach has been presented to quantify the FLEX and ATF benefits by estimating the risk associated with each option. ATFs with multilayered silicon carbide (SiC), iron-chromium-aluminum, and chromium-coated zirconium cladding were considered in this study. While these ATF candidates perform better than the current zirconium cladding (Zr), they may introduce additional failure modes in some operating conditions. The fuel failure analysis modules (FAMs) were developed to investigate ATF performance. The dynamic risk assessments were performed using RAVEN, a DPRA tool, coupled with RELAP5 and FAMs. A cumulative distribution function-based index provided a mean of comparing the benefits of safety enhancements. For medium break loss of coolant accidents, FLEX operational timing window for each fuel type was estimated. Among these ATF candidates, SiC-type ATF was the most beneficial candidate for an increased safety margin than Zr-based fuel and was found to complement FLEX strategies in terms of risk and coping time.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗