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At least 253 records · Page 14

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DOE OSTI2023

Particle Acceleration by Magnetic Reconnection in Geospace

Particles are accelerated to very high, non-thermal energies during explosive energy-release phenomena in space, solar, and astrophysical plasma environments. While it has been established that magnetic reconnection plays an important role in the dynamics of Earth’s magnetosphere, it remains unclear how magnetic reconnection can further explain particle acceleration to non-thermal energies. Here we review recent progress in our understanding of particle acceleration by magnetic reconnection in Earth’s magnetosphere. With improved resolutions, recent spacecraft missions have enabled detailed studies of particle acceleration at various structures such as the diffusion region, separatrix, jets, magnetic islands (flux ropes), and dipolarization front. With the guiding-center approximation of particle motion, many studies have discussed the relative importance of the parallel electric field as well as the Fermi and betatron effects. However, in order to fully understand the particle acceleration mechanism and further compare with particle acceleration in solar and astrophysical plasma environments, there is a need for further investigation of, for example, energy partition and the precise role of turbulence.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Oxidative Segregation of Group V Dopants in CdTe Solar Cells

Transparent conductive oxides are used in many technologies and it is important to understand their interfacial chemical reactions. Here, we use recently developed thermomechanical cleaving and X-ray photoelectron spectroscopy to probe oxidation states at the SnO 2 interface of CdTe solar cells. We show that tin oxide promotes the formation of nanometer-scale oxides of tellurium and sulfur, largely during CdCl 2 /O 2 activation. Surprisingly, in copper-doped devices, relatively low temperature anneals (180-260 degrees C) to diffuse and activate copper acceptors also cause significant oxidation changes at the front interface, providing a heretofore missing aspect of how back contact processes can modify device transport, recombination, and performance. For Group V-doped devices, this same oxidation process causes segregation of the dopants to the SnO 2 interface in their oxidized states, implying that adjacent regions in the absorber have been depleted of dopants. Intriguingly, we demonstrate that because of their layered, van der Walls-bonded crystal structure, spatially segregated Group V oxides may represent a mechanically weak layer in a finished device.

14 SOLAR ENERGY↗

DOE OSTI2021

Imaging CdCl 2 defect passivation and formation in polycrystalline CdTe films by cathodoluminescence

Polycrystalline thin-film solar cells are attractive for low-cost photovoltaics, but their efficiencies are hindered by material quality issues. State-of-the-art CdTe solar cells use CdCl 2 annealing treatments whose effects are still being discovered at a fundamental level. Here, a series of CdTe samples with different annealing temperatures is investigated with high-resolution hyperspectral cathodoluminescence mapping measured at both room temperature and low temperature on the same microscopic areas. A statistical analysis over a large number of grains is combined with a local analysis at grain boundaries. The results elucidate the dynamic interplay between grain boundary and intragrain defect passivation and formation, in the midst of grain growth. The CdCl 2 annealing initially contributes to an increase of the grain size and the passivation of both grain boundaries and grain interiors, increasing the overall luminescence and diffusion length. For higher annealing temperatures, a further increase of grain size is counterbalanced by the rise of bulk defects. The results illustrate the tradeoffs that lead to an optimal annealing temperature, as well as new methods for understanding defect passivation and creation in thin film solar cells.

14 SOLAR ENERGY↗

DOE OSTI2024

Micromechanical origin of heat transfer to granular flow

Heat transfer across a granular flow is comprised of two resistances in series : near the wall and within the bulk particle bed, neither of which is well understood due to the lack of experimental probes to separate their respective contribution. Here, we use a frequency modulated photothermal technique to separately quantify the thermal resistances in the near-wall and the bulk bed regions of particles in flowing states. Compared to the stationary state, the flowing leads to a higher near-wall resistance and a lower thermal conductivity of bulk beds. As a result, coupled with discrete element method simulation, we show that the near-wall resistance can be explained by particle diffusion in granular flows.

14 SOLAR ENERGY↗

DOE OSTI2023

Chemical and Electronic Structure at the Interface between a Sputter-Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se) 2 Solar Cell Absorber

The chemical and electronic structure of the interface between a sputter-deposited Zn(O,S) buffer layer and an industrial Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber for thin-film solar cells is investigated with X-ray and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy. We find a CIGSSe absorber surface band gap of 1.61 (±0.14) eV, which is significantly increased as compared to the minimal value derived with bulk-sensitive methods (≈1.1 eV). We find no indication for diffusion of absorber elements into the buffer layer. Surface- and bulk-sensitive measurements of the buffer layer suggest the presence of S-Zn and S-O bonds in the Zn(O,S) layer. We find that the naturally existing downward band bending toward the CIGSSe absorber surface is increased by the formation of the interface, likely enhancing carrier separation under illumination. We also derive a flat conduction band alignment, in line with the reported high conversion efficiencies of corresponding large-area solar cells.

14 SOLAR ENERGY↗

DOE OSTI2023

Measuring Photoexcited Electron and Hole Dynamics in ZnTe and Modeling Excited State Core-Valence Effects in Transient Extreme Ultraviolet Reflection Spectroscopy

Transient extreme ultraviolet (XUV) spectroscopy is becoming a valuable tool for characterizing solar energy materials because it can separate photoexcited electron and hole dynamics with element specificity. We use surface-sensitive femtosecond XUV reflection spectroscopy to separately measure photoexcited electron, hole, and band gap dynamics of ZnTe, a promising photocathode for CO 2 reduction. We develop an ab initio theoretical framework based on density functional theory and the Bethe-Salpeter equation to robustly assign the complex transient XUV spectra to the material's electronic states. Applying this framework, we identify the relaxation pathways and quantify their time scales in photoexcited ZnTe, including subpicosecond hot electron and hole thermalization, surface carrier diffusion, ultrafast band gap renormalization, and evidence of acoustic phonon oscillations.

14 SOLAR ENERGY↗

DOE OSTI2024

Spectral and Temperature-Dependent Optical Metrology: Towards More Robust, Effective and Durable Materials for Concentrated Solar Power

The primary objective of this project is to develop reliable and standardized spectroscopic measurement techniques to determine radiative properties, specifically the emittance and reflectance, of materials relevant for the next generation (Gen3) concentrated solar power (CSP) technologies. Experimental measurements will span near- and mid-infrared wavelengths (1–20 µm) with emphasis on quantifying the influences of: (1) operating temperatures of 25–1000 °C, (2) thermal cycling, and (3) environmental exposure of materials during operation (vacuum/air). A secondary goal is to develop open-access and digitized databases to host and share experimental data, together with standardized measurement protocols and operating procedures to determine optical properties of materials. This project will also include reasonable emphasis on developing predictive modeling tools to augment experimental data to extract more fundamental and material-specific radiative properties.

14 SOLAR ENERGY↗

DOE OSTI2020

Distributed Generation Market Demand (dGen) model

The Distributed Generation Market Demand (dGen) model simulates customer adoption of distributed energy resources (DERs) for residential, commercial, and industrial entities in the United States or other countries through 2050. The dGen model can be used for identifying the sectors, locations, and customers for whom adopting DERs would have a high economic value, for generating forecasts as an input to estimate distribution hosting capacity analysis, integrated resource planning, and load forecasting, and for understanding the economic or policy conditions in which DER adoption becomes viable, and for illustrating sensitivity to market and policy changes such as retail electricity rate structures, net energy metering, and technology costs.

Array↗

DOE OSTI2023

Interfacial Connections between Organic Perovskite/n + Silicon/Catalyst that Allow Integration of Solar Cell and Catalyst for Hydrogen Evolution from Water

Abstract The rapidly increasing solar conversion efficiency (PCE) of hybrid organic–inorganic perovskite (HOIP) thin‐film semiconductors has triggered interest in their use for direct solar‐driven water splitting to produce hydrogen. However, application of these low‐cost, electronic‐structure‐tunable HOIP tandem photoabsorbers has been hindered by the instability of the photovoltaic‐catalyst‐electrolyte (PV+E) interfaces. Here, photolytic water splitting is demonstrated using an integrated configuration consisting of an HOIP/n + silicon single junction photoabsorber and a platinum (Pt) thin film catalyst. An extended electrochemical (EC) lifetime in alkaline media is achieved using titanium nitride on both sides of the Si support to eliminate formation of insulating silicon oxide, and as an effective diffusion barrier to allow high‐temperature annealing of the catalyst/TiO 2 ‐protected‐n + silicon interface necessary to retard electrolytic corrosion. Halide composition is examined in the (FA 1‐x Cs x )PbI 3 system with a bandgap suitable for tandem operation. A fill factor of 72.5% is achieved using a Spiro‐OMeTAD‐hole‐transport‐layer (HTL)‐based HOIP/n + Si solar cell, and a high photocurrent density of −15.9 mA cm −2 (at 0 V vs reversible hydrogen electrode) is attained for the HOIP/n + Si/Pt photocathode in 1 m NaOH under simulated 1‐sun illumination. While this thin‐film design creates stable interfaces, the intrinsic photo‐ and electro‐degradation of the HOIP photoabsorber remains the main obstacle for future HOIP/Si tandem PEC devices.

08 HYDROGEN↗

DOE OSTI2020

Ultra-thin passivation layers in Cu(In,Ga)Se 2 thin-film solar cells: full-area passivated front contacts and their impact on bulk doping

In the search for highly transparent and non-toxic alternative front layers replacing state-of-the-art CdS in Cu(In,Ga)Se 2 thin-film solar cells, alternatives rarely exceed reference devices in terms of efficiency. Full-area ultra-thin aluminium oxide tunnelling layers do not require any contact patterning and thus overcome the main drawback of insulating passivation layers. Even a few monolayers of aluminium oxide can be deposited in a controlled manner by atomic layer deposition, they show excellent interface passivation properties, low absorption, and suitable current transport characteristics on test devices. Depositing a ZnO-based transparent front contact, however, results in extremely poor solar cell performance. The issue is not necessarily a low quality of the alternative front layer, but rather the intricate relation between front layer processing and electronic bulk properties in the absorber layer. We identify three challenges critical for the development of novel front passivation approaches:(i) both Cd and Zn impurities beneficially reduce the high native net dopant concentration in the space charge region, (ii) sputter deposition of ZnO damages the passivation layer resulting in increased interface recombination, (iii) thermal treatments of devices with ZnO layer result in substantial Zn diffusion, which can penetrate the full absorber thickness already at moderate temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Design Rules of the Mixing Phase and Impacts on Device Performance in High-Efficiency Organic Photovoltaics

In nonfullerene acceptor- (NFA-) based solar cells, the exciton splitting takes place at both domain interface and donor/acceptor mixture, which brings in the state of mixing phase into focus. The energetics and morphology are key parameters dictating the charge generation, diffusion, and recombination. It is revealed that tailoringthe electronic properties of the mixing region by doping with larger-bandgap components could reduce the density of state but elevate the filling state level, leading to improved open-circuit voltage ( V OC ) and reduced recombination. The monomolecular and bimolecular recombinations are shown to be intercorrelated, which show a Gaussian-like relationship with V OC and linear relationship with short-circuit current density ( J SC ) and fill factor (FF). The kinetics of hole transfer and exciton diffusion scale with J SC similarly, indicating the carrier generation in mixing region and crystalline domain are equally important. From the morphology perspective, the crystalline order could contribute to V OC improvement, and the fibrillar structure strongly affects the FF. These observations highlight the importance of the mixing region and its connection with crystalline domains and point out the design rules to optimize the mixing phase structure, which is an effective approach to further improve device performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was studied by exposing samples to AM1.5 simulation visible light and full-spectrum light at temperatures ranging from 55 to 78 °C for up to 300 h. Charge injection and loss were quantified based on shifts in the flatband voltage of capacitance–voltage curves measured with a mercury probe. The most probable mechanism of charge loss was found to be diffusion of negative charged hydrogen atoms through nitride and bottom oxide. The optimum recipe for each layer of the stack was investigated to minimize the loss of injected charge. The flatband voltage decay of the optimized stack was found to fit a power-law trend, suggesting the dispersive transport of hydrogen atoms with a dispersion parameter of ~0.06–0.07. The optimized stack is projected to maintain a negative charge density of about 3.6 × 10 12 cm –2 or more after 25 years of field operation in an environment such as Arizona, which would be sufficient for field-effect passivation under one-sun illumination. Furthermore, the high stability of the negative injected charge makes the plasma charging technology a safer and lower cost alternative to Al 2 O 3 -passivation technology commonly used to passivate p-type surfaces.

14 SOLAR ENERGY↗

DOE OSTI2024

Stabilization of Catalytically Active Surface Defects on Ga-doped La–Sr–Mn Perovskites for Improved Solar Thermochemical Generation of Hydrogen

Solar thermochemical hydrogen (STCH) production from water splitting typically requires performing redox cycles at temperatures above 1200 °C to reduce and re-oxidize the bulk of a reversible material. Bulk processes such as oxygen vacancy formation and oxygen diffusion energies dictate the viability of a material for STCH. The surface plays an important role in the formation and destruction of vacancies and interacts with gas phase water and surface adsorbed species. These surface processes can lead to surface reconfigurations and even the formation of surface phases with stoichiometry and oxygen content very different from the bulk composition. Understanding in-situ the surface chemical state and its evolution under water splitting is important to design nonstoichiometric oxides capable of longer-lasting STCH generation at lower temperatures. In this work, we describe the water splitting active defect sites in LSM ((La 0.65 Sr 0.35 ) 0.95 MnO 3–δ ) and Ga-doped LSM ((La 0.6 Sr 0.4 ) 0.95 (Mn 0.8 Ga 0.2 )O 3–δ ) perovskites during Operando thermochemical water splitting conditions using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) experiments at 800 °C under steam. We show that sub-stoichiometric La +3 in the oxygen-vacancy rich surface at operating conditions can be used to correlate surface water splitting activity and the creation of surface hydroxide intermediates. The addition of Ga in LSM is shown to drastically stabilize the surface chemical composition by preventing Sr segregation and stabilizing catalytically active surface defects that promote the binding of adsorbed hydroxides. Here, we use Operando AP-XPS quantification of metastable surface hydroxide intermediates (La(OH) 3 ) to determine the amount of catalytically active surface sites in LSM (2.9%) and in LSMG (7.8–8.1%, depending on the bulk oxidation state).

08 HYDROGEN↗

DOE OSTI2023

Performance and durability of electrically conductive tape for shingled Si heterojunction technology cells

We report electrically conductive tape (ECT) was characterized and used to assemble shingled cell strings at low temperature to achieve high reliability Pb- and Ag-free interconnections. The volume resistivity for two considered ECTs are 0.13 ± 0.06 mΩ·cm and 0.47 ± 0.20 mΩ·cm and specific contact resistances, 6.85± 2.00 mΩ·cm 2 and 6.30 ± 0.37 mΩ·cm 2 using the emerging IEC 62788-8-1 Technical Specification for assessment of electrically conductive adhesives (ECA). Durability and performance of the technology in glass–glass mini modules were evaluated with temperature cycling, damp heat testing, and combined-accelerated stress testing (CAST). Through temperature cycling (-40°C to 85°C) applying five times the mini module short-circuit current in forward bias and in the multi climate CAST protocol, there was negligible degradation of fill factor after replacing connectors at the modules' cable leads; however, CAST resulted in short circuit current loss attributed to degradation in light collection by the cells, not the ECT. The IEC 61215-2 85°C, 85% relative humidity damp heat testing showed susceptibility of the HJT cells to effects of humidity in the electroluminescence intensity around the module perimeter that degraded power performance by 4% (relative). Contrasting the IEC 61215-2 qualification testing-based damp heat testing with CAST, factors such as the optical stress of CAST may precipitate the degradation of the modules whereas the humidity levels and duration of IEC 61215-2 damp heat testing may lead to excessive levels of humidity diffused into the modules, potentially resulting in degradation that is unrepresentative of the field.

14 SOLAR ENERGY↗

DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

High efficiency silicon solar cells are characterized using current-voltage curves, electroluminescence imaging, impedance spectroscopy, capacitance transients, microwave photoconductive decay, and time-resolved photoluminescence imaging. The sample set is composed of cells from different manufacturers and includes an n-type silicon heterojunction (SHJ), an n-type passivated emitter rear totally diffused (PERT), and five different p-type passivated emitter rear contact (PERC) cells. Carrier lifetimes, both photoconductivity and photoluminescence, are measured co-located with the light excitation pulse and within the cell but away from the light spot. Luminescence intensity and excess carrier lifetimes correlate to cell voltage. The capacitance transient time constants correlate to the capacitance values extracted from impedance spectroscopy.

capacitance↗

DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

capacitance↗

DOE OSTI2024

Investigation of Sub‐Bandgap Emission and Unexpected n‐Type Behavior in Undoped Polycrystalline CdSe x Te 1‐x

Abstract Se alloying has enabled significantly higher carrier lifetimes and photocurrents in CdTe solar cells, but these benefits can be highly dependent on CdSe x Te 1‐x processing. This work evaluates the optoelectronic, chemical, and electronic properties of thick (3 µm) undoped CdSe x Te 1‐x of uniform composition and varied processing conditions (CdSe x Te 1‐x evaporation rate, CdCl 2 anneal, Se content) chosen to reflect various standard device processing conditions. Sub‐bandgap defect emission is observed, which increased as Se content increased and with “GrV‐optimized CdCl 2 ” (i.e., CdCl 2 anneal conditions used for group‐V‐doped devices). Low carrier lifetime is found for GrV‐optimized CdCl 2 , slow CdSe x Te 1‐x deposition, and low‐Se films. Interestingly, all films (including CdTe control) exhibited n‐type behavior, where electron density increased with Se up to an estimated ≈10 17 cm −3 . This behavior appears to originate during the CdCl 2 anneal, possibly from Se diffusion leading to anion vacancy (e.g., V Se , V Te ) and Cl Te generation.

14 SOLAR ENERGY↗

DOE OSTI2020

Fast Proton Transfer and Hydrogen Evolution Reactivity Mediated by [Co 13 C 2 (CO) 24 ] 4–

A common approach to speeding up proton transfer (PT) by molecular catalysts is manipulation of the secondary coordina-tion sphere with proton relays and these enhance overall reaction rates by orders of magnitude. In contrast, heterogenous electrocatalysts have band structures that promote facile PT concerted with electron transfer (ET), known as the Volmer mechanism. Here in this paper, we show that [Co 13 C 2 (CO) 24 ] 4– , containing multiple Co-Co bonds to statistically enhance observed rates of PT, promotes PT on the order of 2.3 × 10 9 M -1 s -1 which suggests a diffusion-limited rate. The fast ET and PT chemistry is at-tributed to the delocalized electronic structure of [Co 13 C 2 (CO) 24 ] 4– . Electrochemical characterization of [Co 13 C 2 (CO) 24 ] 4– in the presence and absence of protons reveals ET kinetics and diffusion behavior similar to other small clusters such as nano-materials and fullerenes.

08 HYDROGEN↗