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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.
Proton beams uniformity available at NASA synchrocyclotron designed for radiation biology research by simulating space radiation environment
A radiation effects experimental program was performed, in which second surface mirror type thermal control coatings were exposed to ultraviolet radiation, electrons, and protons simultaneously. Stability was assessed by making periodic spectral reflectance measurements in situ (and in air after testing for comparison). Solar absorption coefficients were derived by computer. Many of the exposed materials showed large amounts of degradation in reflectance absorptance, principally due to the electron exposure. A series of tests was conducted, leading to the identification of a modified second surface mirror that shows considerable improvement and promise for stability during thermal control applications in a charged particle space radiation environment.
Radiation was found not to be an operational problem during the Apollo program. Doses received by the crewmen of Apollo missions 7 through 17 were small because no major solar-particle events occurred during those missions. One small event was detected by a radiation sensor outside the Apollo 12 spacecraft, but no increase in radiation dose to the crewmen inside the spacecraft was detected. Radiation protection for the Apollo program was focused on both the peculiarities of the natural space radiation environment and the increased prevalence of manmade radiation sources on the ground and onboard the spacecraft. Radiation-exposure risks to crewmen were assessed and balanced against mission gain to determine mission constraints. Operational radiation evaluation required specially designed radiation detection systems onboard the spacecraft in addition to the use of satellite data, solar observatory support, and other liaison. Control and management of radioactive sources and radiation-generating equipment was important in minimizing radiation exposure of ground-support personnel, researchers, and the Apollo flight and backup crewmen.
All the currently available results of the flight experiment for all the individually instrumented 130 transistors, relating to both biased and unbiased n- and p-channel RCA and -channel AMI devices were presented. The predictions of dose levels based on a detailed analysis of the space radiation environment as encountered by Explorer-55 and calculated by one dimensional slab geometry, and three dimensional spherical geometry were cited.
A computer code was developed to evaluate the space radiation environment encountered by geocentric satellites. The Short Orbital Flux Integration Program (SOFIP) is a compact routine of modular compositions, designed mostly with structured programming techniques in order to provide core and time economy and ease of use. The program in its simplest form produces for a given input trajectory a composite integral orbital spectrum of either protons or electrons. Additional features are available separately or in combination with the inclusion of the corresponding (optional) modules. The code is described in detail, and the function and usage of the various modules are explained. A program listing and sample outputs are attached.
The use of a multiply pulsed copper halide laser to significantly anneal out the damage to silicon solar cells caused by a simulated space radiation environment is investigated. Preliminary experiments demonstrate that the amount of damage can be decreased by 41% as measured by the maximum power generated.
The assumption that spherical-shell ion chamber rssponse is equal to the dose in the center of the cavity is found to be a poor approximation for ion chambers used for area monitoring in the space program. The dose response is calculated using the appropriate areal density distribution function. Effects of nuclear reaction are evaluated using proton buildup factors. Errors of up to 100% are found for some components of the space radiation environments.
The space radiation environment of the TOPEX spacecraft is investigated. A single trajectory was considered. The external (surface incident) charged particle radiation, predicted for the satellite, is determined by orbital flux integration for the specified trajectory. The latest standard models of the environment are used in the calculations. The evaluation is performed for solar maximum conditions. The spacecraft exposure to cosmic rays of galactic origin is evaluated over its flight path through the magnetosphere in terms of geomagnetic shielding effects, both for surface incident heavy ions and for particles emerging behind different material thickness. Limited shielding and dose evaluations are performed for simple infinite slab and spherical geometries. Results, given in graphical and tabular form, are analyzed, explained, and discussed. Conclusions are presented and commented on.
Gallium Arsenide (GaAs) solar cells are viewed as a potential primary power source on certain future Earth orbiting satellites. However, the relative merits of gallium arsenide over silicon in a space radiation environment are largely unknown because a general degradation model for gallium arsenide does not exist. The results of a test simulating the proton radiation environment existing in a polar orbit and the concomitant effects on GaAs and thin silicon (Si) solar cells are presented. The objectives and methodology of the simulation test were discussed. The electrical characteristics of GaAs and Si solar cells are given in graph form. It was concluded that GaAs cells are viable for use on satellites in low Earth orbit.
The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.
The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.
The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.
The effects of a simulated space radiation environment on the dimensional stability of an elastomer-toughened epoxy-graphite composite were determined. The response of the material was characterized following exposure to radiation doses equivalent to geosynchronous orbit lifetimes ranging from 6 months to 30 years. The results show that radiation interacts with the epoxy matrix to embrittle the composite, beginning at relatively low total doses (10 to the 7th power rads). The embrittlement results in thermal expansion changes and significant laminate microcracking during thermal cycling. These property changes could limit the service life of this material in some spacecraft applications.
The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.
n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.
NASA photovoltaic R and D efforts address future Agency space mission needs through a comprehensive, integrated program. Activities range from fundamental studies of materials and devices to technology demonstrations of prototype hardware. The program aims to develop and apply an improved understanding of photovoltaic energy conversion devices and systems that will increase the performance, reduce the mass, and extend the lifetime of photovoltaic arrays for use in space. To that end, there are efforts aimed at improving cell efficiency, reducing the effects of space particulate radiation damage (primarily electrons and protons), developing ultralightweight cells, and developing advanced ray component technology for high efficiency concentrator arrays and high performance, ultralightweight arrays. Current goals that have been quantified for the program are to develop cell and array technology capable of achieving 300 watts/kg for future missions for which mass is a critical factor, or 300 watts/sq m for future missions for which array size is a major driver (i.e., Space Station). A third important goal is to develop cell and array technology which will survive the GEO space radiation environment for at least 10 years.
Effects on the internal spacecraft electronics due to exposure to the natural and enhanced space radiation environment will be reviewed. The emphasis will be placed on the description of the nature of both the exposure environment and failure mechanisms in semiconductors. Understanding both the system environment and device effects is critical in the use of laboratory simulation environments to obtain the data necessary to design and qualify components for successful application.