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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Gravitational star formation thresholds and gas density in three galaxies

It has long been held that the star formation rate (SFR) may be described as a power law of the gas density, p(exp n), as given by Schmidt (1959). However, this relation has as yet remained poorly defined and is likewise poorly understood. In particular, most studies have been investigations of global gas and star formation properties of galaxies, due to lack of adequate high-resolution data for detailed studies of individual galaxies. The three spiral galaxies in this study have published maps of both H2 (as traced by CO), and HI, thereby enabling the authors to investigate the relationship between total gas surface density and SFR. The purpose of the present investigation is the comparison of spatially-resolved total surface gas density in three galaxies (NGC 6946, M51, and M83) to sigma sub c as given by the above model. CO, HI and H alpha data for NGC 6946 were taken from Tacconi-Garman (1988), and for M51 and M83 from Lord (1987). The authors used a CO-H2 conversion of N(H2)/I sub CO(exp cos i = 2.8 x 10(exp 20) atoms cm(-2)/(K kms(-1), and summed the H2 and HI data for each galaxy to obtain the total hydrogen gas density. This total was then multiplied by a factor of 1.36 to include the contribution of helium to the total surface gas density. The authors assumed distances to NGC 6946, M51, and M83 to be 6.0, 9.6, and 8.9 Mpc respectively, with inclination angles of 30, 20, and 26 degrees. H alpha flux was used as the measure of SFR for NGC 6946, and SFR for the remaining two galaxies was taken directly from Lord as computed from H alpha measurements. The results of these full-disk studies thus show a remarkable correlation between the total gas density and the threshold densities given by the gravitational stability criterion. In particular, the threshold density appears to mark a lower boundary to the range of gas densities in these galaxies, which may have consequence in determining appropriate models for star formation and gas dynamics. More evidence is required to verify this result, and the authors are currently undertaking a high-resolution study of the nearby spiral M33 and other galaxies to further investigate this problem.

Oey, M. S.↗
NASA NTRS1991

Effect of initial delamination on Mode 1 and Mode 2 interlaminar fracture toughness and fatigue fracture threshold

Static and fatigue double-cantilever beam (DCB) and end-notch flexure (ENF) tests were conducted to determine the effect of the simulated initial delamination in interlaminar fracture toughness, G(sub c), and fatigue fracture threshold, G(sub th). Unidirectional, 24-ply specimens of S2/SP250 glass/epoxy were tested using Kapton inserts of four different thickness - 13, 25, 75, and 130 microns, at the midplane at one end, or with tension or shear precracks, to simulate an initial delamination. To determine G(sub c), the fatigue fracture threshold below which no delamination growth would occur in less than 1 x 10(exp 6) cycles, fatigue tests were conducted by cyclically loading specimens until delamination growth was detected. Consistent values of model 1 fracture toughness, G(sub Ic), were measured from DCB specimens with inserts of thickness 75 microns or thinner, or with shear precracks. The fatigue DCB tests gave similar values of G(sub Ith) for the 13, 25, and 75 microns specimens. Results for the shear precracked specimens were significantly lower that for specimens without precracks. Results for both the static and fatigue ENF tests showed that measured G(IIc) and G(IIth) values decreased with decreasing insert thickness, so that no limiting thickness could be determined. Results for specimens with inserts of 75 microns or thicker were significantly higher than the results for precracked specimens or specimens with 13 or 25 microns inserts.

Murri, Gretchen Bostaph↗
NASA NTRS1990

Stimulated Raman-scattering threshold behavior of binary mixture micrometer-sized droplets

Stimulated Raman scattering (SRS) from binary liquid mixture micrometer-sized droplets irradiated by nanosecond laser pulses exhibits previously unreported features. SRS emission at wavelength shifts corresponding to combination frequencies of the individual component Stokes shifts are observed in droplets but not in bulk mixtures. Furthermore, droplet SRS thresholds are determined by component refractive indices and concentrations, in contrast to bulk thresholds, for which self-focusing likely plays a dominant role.

Biswas, Abhijit↗
NASA NTRS1991

Vibration suppression using a constrained rate-feedback-threshold control strategy

A finite time, minimum force rate-feedback-threshold controller is developed to bring a system with or without known external disturbances back into an 'allowable' state bound in finite time. The disturbances are assumed to be expandable in terms of Fourier series. The optimal control is defined by a two-point boundary value problem coupled to a set of definite integral constraints. Quasi-closed form solutions are derived which replace the solution of the two-point boundary value problem and definite integral constraints with the solution of algebraic equations and the calculation of matrix exponentials. Examples are provided which demonstrate the threshold control technique and compare the quasi-closed form solutions with numerical and MACSYMA generated exact solutions.

Zimmerman, D. C.↗
NASA NTRS1992

Aerosol-induced laser breakdown thresholds - Effect of resonant particles

Laser intensity thresholds for the onset of stimulated Raman scattering and the breakdown in resonant micron-sized droplets are reduced to below those for nonresonant droplets by a factor of about 3. This reduction is most likely caused by the enhancement of electromagnetic energy (photon) densities within the droplets over and above that in nonresonant droplets. The magnitude of the threshold reduction for breakdown is consistent with the assertion that: (1) input (pump) wavelength resonances that initiate plasma have cavity Qs of about 10 exp 4; and (2) finite regions of high-electromagnetic-energy density within the droplet, with dimensions of the order of the Debye length, are required to initiate plasma.

Pinnick, R. G.↗
NASA NTRS1991

Does a threshold stress for creep exist in HfC-dispersed NiAl?

Recently it was proposed (Jha et al., 1989; Whittenberger et al., 1990) on the basis of constant velocity testing at 1300 K that dispersion strengthened NiAl composites containing about 4 wt pct HfC possess threshold stresses for creep. Further, 1300 K compression testing has been conducted on NiAl+4HfC, and diametrically opposite behavior has been found: for constant load creep tests a normal power law behavior was observed. However, additional constant velocity testing still indicates that the flow stress is essentially independent of strain rate below 10 exp -6/s. Examination of NiAl+4.3HfC specimens deformed under constant velocity conditions revealed that the original hot extruded small grain structure could be converted to large, elongated grains during testing. Such a transformation appears to be responsible for the apparent threshold stress behavior in HfC dispersed NiAl.

Whittenberger, J. D.↗
NASA NTRS1991

Theoretical temperature-dependent branching ratios and laser thresholds of the 3F4 to 3H6 levels of Tm(3+) in ten garnets

The calculated energy levels, the branching ratios, and the estimated thresholds for thulium operating on the 3F4 to 3H6 transitions are reported. Garnet materials with the general formula A3B2C3O12 are evaluated. Calculations are performed for the A side under the assumption of D2 symmetry. X-ray data available in the literature are used to evaluate the crystal-field components, A sub nm. Even-n components are employed to calculate the crystal-field splittings within the manifold. Thermal occupation factors are determined in a straightforward manner using a Boltzmann distribution for the respective manifolds. Odd-n components are applied to calculate the transition probabilities for electric field transitions. It is determined that the magnetic dipole contributions to the transition probability are comparable to the electric dipole contributions in some cases. Thresholds as a function of the density of thulium atoms are calculated.

Filer, Elizabeth D.↗
NASA NTRS1992

The influence of prior exercise at anaerobic threshold on decompression sickness

This study was conducted to examine the effects of exercise prior to decompression on the incidence of altitude decompression sickness (DCS). In a balanced, two-period, crossover trial, 39 healthy individuals were each exposed twice, without denitrogenation, to an altitude of 6400 m in a hypobaric chamber. Under the experimental condition, subjects exercised at their predetermined anaerobic threshold levels for 30 min each day for 3 d prior to altitude exposure; the other condition was a non-exercise control. Under both conditions, subjects performed exercise simulating space extravehicular activities at altitude for a period of 3 h, while breathing 100 percent oxygen. There were nine preferences (untied responses) for DCS, four under control and five under experimental conditions; all were Type I, pain-only bends. No carry-over effects between exposures was detected, and the test for treatment differences showed p = 0.56 for symptoms. No significant difference in DCS preferences was found after subjects exercised up to their anaerobic threshold levels during the days prior to decompression.

Kumar, K. V.↗
NASA NTRS1993

Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at about 2.0 microns

The first low threshold continuous operation of InGaAs strained layer quantum well lasers at about 2.0 microns is reported. The threshold current density of 5-micron wide and 1.5 mm long ridge waveguide lasers was less than 380 A/sq cm. The external differential quantum efficiency of 1 mm long lasers was as high as 15 percent and laser operation was observed at temperatures as high as 50 C. The lasers are characterized by T(0) = 54 C which is the highest characteristic temperature ever achieved at this wavelength in any material system.

Forouhar, S.↗
NASA NTRS1994

Program For Thresholding In Digital Images

THRTOOL program applies thresholding techniques to Sun rasterfiles. Provides for choice among four methods of thresholding. Written in C language and implemented on Sun series and Silicon Graphics IRIS machines.

Nolf, Scott R.↗
NASA NTRS1994

Proton and helium cyclotron anisotropy instability thresholds in the magnetosheath

Both the protons and the helium ions of the terrestrial magnetosheath typically display T (sub perpendicular) greater than T (sub parallel), where perpendicular to and parallel to denote directions perpendicular and parallel to the background magnetic field. Observations of the highly compressed magnetosheath show an inverse correlation between these ion temperature anisotropies and the parallel proton beta. Computer simulations have demonstrated that these correlations are due to wave-particle scattering by electromagnetic ion cyclotron anisotropy instabilities. These correlations correspond to linear theory thresholds of the proton cyclotron and the helium cyclotron instabilities. This paper uses linear Vlasov theory and the assumption of a constant maximum growth rate to obtain closed-form expressions for these thresholds as a function of the relative helium density and the parallel proton beta in a parameter model of the magnetosheath.

Gary, S. Peter↗
NASA NTRS1994

Star formation thresholds in H II galaxies with H I companions

We present high resolution Very Large Array (VLA) 21 cm line observations of five H II galaxies combined with previous lower resolution data from Taylor et al. (1993) and optical broadband R and H-alpha Charge Coupled Device (CCD) images of the systems. Following Kennicutt (1989) we calculated the threshold H I surface density for star formation for the H II galaxies and compared the location and shape of this predicted threshold density contour with the optical shape of the galaxies. We find generally a good correlation between these two, although a constant density contour of 10(exp 21)/sq cm fits the images of the optical galaxies equally as well. The H I synthesis observations have revealed that the H II galaxies have sharply peaked H I radial profiles, in contrast to the relatively flattened profiles of low surface brightness (LSB) galaxies, suggesting that large central concentrations of gas are a necessary condition for the occurrence of bursts of massive star formation seen in H II galaxies. These observations are consistent with the hypothesis that LSB galaxies represent the quiescent phase of H II galaxies, if a suitable mechanism exists (such as galaxy interactions) to cause H I to concentrate at the center of LSB galaxies prior to the onset of the burst of star formation. However, it is noted that the H II galaxies (and dwarf galaxies in general) span a relatively large range in mass. Since many properties correlate with mass (e.g., gas mass fraction), we point out that great care needs to be taken in choosing the proper comparison samples of LSB and H II galaxies.

Taylor, Christopher L.↗
NASA NTRS1997

Atomic, Molecular, and Optical Physics: Optical Excitation Function of H(1s-2p) Produced by electron Impact from Threshold to 1.8 keV

The optical excitation function of prompt Lyman-Alpha radiation, produced by electron impact on atomic hydrogen, has been measured over the extended energy range from threshold to 1.8 keV. Measurements were obtained in a crossed-beams experiment using both magnetically confined and electrostatically focused electrons in collision with atomic hydrogen produced by an intense discharge source. A vacuum-ultraviolet mono- chromator system was used to measure the emitted Lyman-Alpha radiation. The absolute H(1s-2p) electron impact excitation cross section was obtained from the experimental optical excitation function by normalizing to the accepted optical oscillator strength, with corrections for polarization and cascade. Statistical and known systematic uncertainties in our data range from +/- 4% near threshold to +/- 2% at 1.8 keV. Multistate coupling affecting the shape of the excitation function up to 1 keV impact energy is apparent in both the present experimental data and present theoretical results obtained with convergent close- coupling (CCC) theory. This shape function effect leads to an uncertainty in absolute cross sections at the 10% level in the analysis of the experimental data. The derived optimized absolute cross sections are within 7% of the CCC calculations over the 14 eV-1.8 keV range. The present CCC calculations converge on the Bethe- Fano profile for H(1s-2p) excitation at high energy. For this reason agreement with the CCC values to within 3% is achieved in a nonoptimal normalization of the experimental data to the Bethe-Fano profile. The fundamental H(1s-2p) electron impact cross section is thereby determined to an unprecedented accuracy over the 14 eV - 1.8 keV energy range.

James, G. K.↗
NASA NTRS2000

Fuzzy Behavior Modulation with Threshold Activation for Autonomous Vehicle Navigation

This paper describes fuzzy logic techniques used in a hierarchical behavior-based architecture for robot navigation. An architectural feature for threshold activation of fuzzy-behaviors is emphasized, which is potentially useful for tuning navigation performance in real world applications. The target application is autonomous local navigation of a small planetary rover. Threshold activation of low-level navigation behaviors is the primary focus. A preliminary assessment of its impact on local navigation performance is provided based on computer simulations.

Tunstel, Edward↗
NASA NTRS2000

Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides

In this paper for the first time we study the influence of the polysilicon gate on the random dopant induced threshold voltage fluctuations in sub 100 nm MOSFETs with tunnelling gate oxides. This is done by using an efficient 3D 'atomistic' simulation technique described elsewhere. Devices with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveale that the polysilicon gate is responsible for a substantial fraction of the threshold voltage fluctuations in both devices when the gate oxide is scaled to tunnelling thickness in the range of 1 - 2 nm.

Asenov, Asen↗
NASA NTRS1999

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub 50 nm MOSFETs: a Statistical 3D 'Atomistic' Simulation Study

A 3D 'atomistic' simulation study of random dopant induced threshold voltage fluctuations and lowering in sub 50 nm MOSFETs is presented. The attention is focused mainly on devices with 30 nm effective channel length which represent the expected level of scaling at the end of the Silicon Roadmap. An efficient algorithm, based on a single 3D ap solution of the Poisson equation and a simplified current continuity equation, is used in the simulations. Large samples of microscopically different devices (typically 200) arc used in order to obtain statistically reliable results. The influence of different aspects of the conventional MOSFET design on the threshold voltage fluctuations and lowering are investigated. Results for fluctuation resistant device architectures based on low-doped epitaxial channel MOSFETs are also presented.

Asenov, Asen↗
NASA NTRS1999

Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETs

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

Asenov, Asen↗
NASA NTRS1998

Octave-Band Thresholds for Modeled Reverberant Fields

Auditory thresholds for 10 subjects were obtained for speech stimuli reverberation. The reverberation was produced and manipulated by 3-D audio modeling based on an actual room. The independent variables were octave-band-filtering (bypassed, 0.25 - 2.0 kHz Fc) and reverberation time (0.2- 1.1 sec). An ANOVA revealed significant effects (threshold range: -19 to -35 dB re 60 dB SRL).

Begault, Durand R.↗