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At least 253 records · Page 14

Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification

Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Intentional carbon doping reveals CH as an abundant charged impurity in nominally undoped synthetic WS 2 and WSe 2

Understanding the physical properties and controlling the generation of intrinsic and extrinsic defects is central to the technological adoption of 2D materials in devices. Here we identify a charged carbon-hydrogen complex at a chalcogen site (CH X ) as a common, charged impurity in synthetically grown transition metal dichalcogenides (TMDs). This conclusion is drawn by comparing high resolution scanning probe microscopy measurements of nominally undoped and intentionally carbon doped TMD samples. While CH impurity densities in undoped CVD-grown WS 2 and MOCVD-grown WSe 2 can range anywhere from parts per million to parts per thousand, CH densities in the percentage levels were selectively generated by a post-synthetic methane plasma treatment. Our study indicates that methane plasma treatment is a selective and clean method for the controlled introduction of a charged carbon-hydrogen complex at a surface chalcogen site, adefect that is commonly present in synthetic TMDs.

36 MATERIALS SCIENCE↗

Low temperature CVD growth of WSe 2 enabled by moisture-assisted defects in the precursor powder

Two-dimensional transition metal dichalcogenides (TMDs) have been proposed for a wide variety of applications, such as neuromorphic computing, flexible field effect transistors, photonics, and solar cells, among others. However, for most of these applications to be feasible, it is necessary to integrate these materials with the current existing silicon technology. Although chemical vapor deposition is a promising method for the growth of high-quality and large-area TMD crystals, the high temperatures necessary for the growth make this technique incompatible with the processes used in the semiconductor industry. Herein, we demonstrate the possibility of low-temperature growth of TMDs, using tungsten selenide (WSe 2 ) as a model, by simply using moisture-assisted defective tungsten oxide (WO 3 ) precursor powders during the growth of these materials. Density functional theory calculations reveal the mechanism by which moisture promotes the defect formation on the precursor crystal structure and how it dictates the reduction of the temperature of the growth. The results were compared with the standard growth at high temperatures and with a precursor mixture with alkali salts to show the high quality of the WSe 2 grown at temperatures as low as 550 °C. To conclude, the work improves the understanding of nucleation and growth mechanisms of WSe 2 at low temperatures and provides a useful strategy for the growth of TMDs at temperatures required for the back-end-of-line compatibility with current silicon technology.

2D materials↗

Giant resistance switch in twisted transition metal dichalcogenide tunnel junctions

Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here, in this work, we predict an extremely large resistance switching based on the relative spin–orbit splitting in twisted transition metal dichalcogenide (TMD) monolayers tunnel junctions. Because of the valence band spin splitting which depends on the valley index in the Brillouin zone, the perpendicular electronic transport through the junction depends on the relative reciprocal space overlap of the spin-dependent Fermi surfaces of both layers, which can be tuned by twisting one layer. Our quantum transport calculations reveal a switching resistance larger than 10 6 % when the relative alignment of TMDs goes from 0° to 60° and when the angle is kept fixed at 60° and the Fermi level is varied. By creating vacancies, we evaluate how inter-valley scattering affects the efficiency and find that the resistance switching remains large (10 4 %) for typical values of vacancy concentration. Not only should this resistance switching be observed at room temperature due to the large spin splitting, but our results also show how twist angle engineering and control of van der Waals heterostructures could be used for next-generation memory and electronic applications.

36 MATERIALS SCIENCE↗

Small-𝑥 asymptotics of the leading-twist flavor-singlet quark TMDs

In this paper, we investigate the small-𝑥 behavior of the flavor-singlet, leading-twist quark transverse-momentum-dependent parton distribution functions (TMDs) using the light-cone operator treatment. This formalism allows us to express TMD operators at small 𝑥 in terms of polarized dipole amplitudes, enabling a systematic approach to their small-𝑥 evolution. We derive the evolution equations for these TMDs and solve them within the large-𝑁 𝑐 approximation under the linearized, double-logarithmic approximation, where 𝑁 𝑐 represents the number of quark colors. Expanding on previous work on unpolarized and helicity TMDs, we present the small-𝑥 asymptotics for a comprehensive set of TMDs, including the Sivers function, helicity worm-gear, transversity, pretzelosity, Boer-Mulders, and transversity worm-gear distributions. Our results provide a complete picture of the small-𝑥 asymptotic behavior for all leading-twist flavor-singlet quark TMDs. We also discuss the implications of our findings for phenomenological applications and outline potential avenues for further research, particularly in understanding nonlinear effects and extending beyond the double-logarithmic approximation and large-𝑁 𝑐 approximations.

Adamiak, Daniel [Thomas Jefferson National Acceler↗

Role of weak interlayer coupling in ultrafast exciton-exciton annihilation in two-dimensional rhenium dichalcogenides

Strong interactions between excitons are a characteristic feature of two-dimensional (2D) semiconductors, determining important excitonic properties, such as exciton lifetime, coherence, and photon-emission efficiency. Rhenium disulfide (ReS 2 ), a member of the 2D transition-metal dichalcogenide (TMD) family, has recently attracted great attention due to its unique excitons that exhibit excellent polarization selectivity and coherence features. However, an in-depth understanding of exciton-exciton interactions in ReS 2 is still lacking. In this work, we used ultrafast pump-probe spectroscopy to study exciton-exciton interactions in monolayer (1L), bilayer (2L), and triple layer ReS 2 . Additionally, we directly measure the rate of exciton-exciton annihilation, a representative Auger-type interaction between excitons. It decreases with increasing layer number, as observed in other 2D TMDs. However, while other TMDs exhibit a sharp weakening of exciton-exciton annihilation between 1L and 2L, such behavior was not observed in ReS 2 . We attribute this distinct feature in ReS 2 to the relatively weak interlayer coupling, which prohibits a substantial change in the electronic structure when the thickness varies. This work not only highlights the unique excitonic properties of ReS 2 but also provides novel insight into the thickness dependence of exciton-exciton interactions in 2D systems.

36 MATERIALS SCIENCE↗

Flexoinduced ferroelectricity in low-dimensional transition metal dichalcogenides

We developed a Landau-type theory for the description of polar phenomena in low-dimensional transition metal dichalcogenides (TMDs), specifically exploring the flexoelectric origin of the polarization induced by a spontaneous bending and by inversion symmetry breaking due to the interactions with substrate. We consider the appearance of the spontaneous out-of-plane polarization due to the flexoelectric coupling with the strain gradient of the spontaneous surface rippling and surface-induced piezoelectricity. Additionally, performed calculations proved that the out-of-plane spontaneous polarization, originating from the flexoelectric effect in a rippled TMD, is bistable and reversible by a nonuniform electric field. In contrast, the spontaneous polarization induced by a misfit strain and symmetry-sensitive surface-induced piezoelectric coupling, cannot be reversed by an external electric field. Special attention is paid to the spectral analysis of the linear dielectric susceptibility and gain factor, which enhancement is critically important for the observation of the polar phenomena in low-dimensional TMDs by the surface-enhanced vibrational spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Competing magnetic states in transition metal dichalcogenide moiré materials

Small-twist-angle transition metal dichalcogenide (TMD) heterobilayers develop isolated flat moiré bands that are approximately described by triangular lattice generalized Hubbard models. In this paper we explore the metallic and insulating states that appear under different control conditions at a density of one electron per moiré period and the transitions between them. By combining fully self-consistent Hartree-Fock theory calculations with strong-coupling expansions around the atomic limit, we identify four different magnetic states and one nonmagnetic state near the model phase diagram’s metal-insulator phase transition line. Here, ferromagnetic insulating states, stabilized by nonlocal direct exchange interactions, are surprisingly prominent.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Twistronics of Janus transition metal dichalcogenide bilayers

Twisted multilayers of two-dimensional (2D) materials are an increasingly important platform for investigating quantum phases of matter, and in particular, strongly correlated electrons. The moiré pattern introduced by the relative twist between layers creates effective potentials of long wavelength, leading to electron localization. However, in contrast to the abundance of 2D materials, few twisted heterostructures have been studied until now. Here, in this study, we develop a first-principles continuum theory to study the electronic bands introduced by moire patterns of twisted Janus transition metal dichalcogenide (TMD) homo- and heterobilayers. The model includes lattice relaxation, stacking-dependent effective mass, and Rashba spin-orbit coupling. We then perform a high-throughput generation and characterization of DFT-extracted continuum models for more than a hundred possible combinations of materials and stackings. Our model predicts that the moiré physics and emergent symmetries depend on chemical composition, vertical layer orientation, and twist angle, so that the miniband wave functions can form triangular, honeycomb, and kagome networks. Rashba spin-orbit effects, peculiar of these systems, can dominate the moiré bandwidth at small angles. Our work enables detailed investigation of Janus twisted heterostructures, allowing the discovery and control of novel electronic phenomena.

36 MATERIALS SCIENCE↗

Time-reversal invariant topological moiré flat band: A platform for the fractional quantum spin Hall effect

Motivated by recent observation of the quantum spin Hall effect in monolayer germanene and twisted bilayer transition-metal-dichalcogenides (TMDs), we study the topological phases of moir twisted bilayers with time-reversal symmetry and spin sz conservation. By using a continuum model description which can be applied to both germanene and TMD bilayers, we show that at small twist angles the emergent moir flat bands can be topologically nontrivial due to inversion symmetry breaking. Each of these flat bands admits a lowest-Landau-level description for each spin projection in the chiral limit and at magic twist angle. Furthermore, this allows for the construction of a many-body Laughlin state with time-reversal symmetry which can be stabilized by a short-range pseudopotential, and therefore serves as an ideal platform for realizing the so-far elusive fractional quantum spin Hall effect with emergent spin-1/2 U(1) symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tomography of pions and protons via transverse momentum dependent distributions

We perform the first simultaneous extraction of parton collinear and transverse degrees of freedom from low-energy fixed-target Drell-Yan data in order to compare the transverse momentum dependent (TMD) parton distribution functions (PDFs) of the pion and proton. We demonstrate that the transverse separation of the quark field encoded in TMDs of the pion is more than 4⁢𝜎 smaller than that of the proton. Additionally, we find the transverse separation of the quark field decreases as its longitudinal momentum fraction decreases. In studying the nuclear modification of TMDs, we find clear evidence for a transverse EMC effect. We comment on possible explanations for these intriguing behaviors, which call for a deeper examination of tomography in a variety of strongly interacting quark-gluon systems.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Event generator for jet tomography in electron-ion collisions

We develop the first event generator, the electron-heavy-ion-jet-interaction-generator (eHIJING), for the jet tomography study of electron-ion collisions. In this generator, energetic jet partons produced from the initial hard scattering undergo multiple collisions with the nuclear target. The collision rate is proportional to the transverse-momentum-dependent (TMD) gluon density in the nucleus, which is given by a simple model inspired by the physics of gluon saturation. Medium-modified QCD splitting functions within the higher-twist (HT) and generalized higher-twist (GHT) frameworks are utilized to simulate parton showering in the nuclear medium that takes into account the non-Abelian Landau-Pomeranchuck-Midgal interference effect. Employing eHIJING, we revisit hadron production in semi-inclusive deep inelastic scattering (SIDIS) as measured by EMC, HERMES, and recent CLAS experiments. eHIJING with both GT and GHT frameworks gives reasonably good descriptions of these experimental data. Predictions for experiments at the future electron-ion colliders are also provided. It is demonstrated that future measurements of the transverse momentum broadening of single hadron spectra can be used to map out the two-dimensional kinematic (Q 2 , x B ) dependence of the jet transport coefficient $\hat{q}$ in cold nuclear matter.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Off-shell pion properties: Electromagnetic form factors and light-front wave functions

The off-shell pion electromagnetic form factors are explored with corresponding off-shell light-front wave functions modeled by constituent quark and antiquark. We apply the Mandelstam approach for the microscopic computation of the form factors relating the model parameters with the pion decay constant and charge radius. Analyzing the existing data on the cross sections for the Sullivan process, 1 H(e,e',π + )⁢n, Charged pion form factor between Q 2 = 0.60, and 2.45 GeV 2 . I. Measurements of the cross section for the 1 H⁡(e,e'⁢π + )⁢n reaction, we extract the off-shell pion form factor using the relation derived from the generalized Ward-Takahashi identity for the pion electromagnetic current. They are compared with our previous results from exactly solvable manifestly covariant model of a (3+1)-dimensional fermion field theory. We find that the adopted constituent quark model reproduces the extracted off-shell form factor F 1 ⁡(Q 2 ,t) from the experimental data within a few percent difference and matches well with our previous theoretical simulation which exhibits a variation of about 10% for the extracted off-shell pion form factor g(Q 2 ,t). We also identify the pion valence parton distribution function (PDF) and transverse momentum distribution (TMD) in terms of the light-front wave function and discuss their off-shell properties.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Hybridized Exciton-Photon-Phonon States in a Transition Metal Dichalcogenide van der Waals Heterostructure Microcavity

Excitons in atomically thin transition-metal dichalcogenides (TMDs) have been established as an attractive platform to explore polaritonic physics, owing to their enormous binding energies and giant oscillator strength. Basic spectral features of exciton polaritons in TMD microcavities, thus far, were conventionally explained via two-coupled-oscillator models. This ignores, however, the impact of phonons on the polariton energy structure. Here we establish and quantify the threefold coupling between excitons, cavity photons, and phonons. For this purpose, we employ energy-momentum-resolved photoluminescence and spatially resolved coherent two-dimensional spectroscopy to investigate the spectral properties of a high-quality-factor microcavity with an embedded WSe 2 van der Waals heterostructure at room temperature. Our approach reveals a rich multibranch structure which thus far has not been captured in previous experiments. Simulation of the data reveals hybridized exciton-photon-phonon states, providing new physical insight into the exciton polariton system based on layered TMDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin Polarons and Ferromagnetism in Doped Dilute Moiré-Mott Insulators

Moiré heterostructures of transition metal dichalcogenides (TMDs) exhibit Mott-insulating behavior both at half filling as well as at fractional fillings, where electronic degrees of freedom form self-organized Wigner crystal states. An open question concerns magnetic states obtained by lifting the pseudospin-1/2 degeneracy of these states at lowest temperatures. While at half filling virtual hopping is expected to induce (weak) antiferromagnetic exchange interactions, these are strongly suppressed when considering dilute filling fractions. We argue that, instead, a small concentration of doped electrons leads to the formation of spin polarons, inducing ferromagnetic order at experimentally relevant temperatures, consistent with recently observed ferromagnetic states in moiré TMD systems. Here, we predict explicit signatures of polaron formation in the magnetization profile.

Kondo lattice model↗

Universality in the Near-Side Energy-Energy Correlator

We investigate the energy-energy correlator (EEC) of hadrons produced on the same side in e + e − annihilation or in leading jets in p p collisions. We observe a remarkable universality of the correlator. Using a nonperturbative transverse momentum dependent (TMD) fragmentation function to model the transition from the “free-hadron” region to the perturbative collinear region, we are able to describe the near-side shapes and peaks over a wide range of energy for both the e + e − annihilation and the p p jet substructure measurements in terms of just two parameters. We present further predictions for the ratio of the projected three-point energy correlator to the EEC. The excellent agreement between our calculations and the experimental data may provide new insights into the role of nonperturbative physics for EECs, and suggests the possibility of exploring nonperturbative TMDs using theoretical tools developed for the energy correlators. Published by the American Physical Society 2025

Liu, Xiaohui (ORCID:0000000277011205)↗

Lattice QCD Benchmark of Proton Helicity and Flavor-Dependent Unpolarized Transverse Momentum-Dependent Parton Distribution Functions at Physical Quark Masses

We present the first lattice QCD calculations of the isovector helicity transverse momentum-dependent parton distribution function (TMDPDF) and the flavor-dependent unpolarized TMDPDFs for up and down quarks in the proton. Our computations utilize domain-wall fermion discretization with physical quark masses. Employing Coulomb-gauge-fixed quark correlation functions within the large-momentum effective theory framework, we access nonperturbative transverse quark separations 𝑏 𝑇 up to approximately 1 fm, corresponding to transverse momenta as low as 200 MeV. Based on the quasi-TMD factorization theorem, we construct renormalization-group–invariant ratios that are equal to the corresponding light-cone TMDPDF ratios. At moderate 𝑥, our results reveal that the isovector helicity and unpolarized TMDPDFs exhibit nearly identical transverse structure up to a normalization factor, and the unpolarized distributions display only mild flavor dependence. These findings not only support key trends observed in recent global analyses but also provide robust, nonperturbative constraints that can distinguish between different parameterizations. This Letter establishes a first-principles benchmark for TMDPDFs, offering valuable input for ongoing and future experimental efforts to map the proton’s three-dimensional structure.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Modified atomic layer deposition of MoS 2 thin films

As one of the most attractive transition metal dichalcogenides (TMDs), the growth of molybdenum disulfide (MoS 2 ) with industrial compatibility is of great importance. Atomic layer deposition (ALD) has been shown to be a promising method to achieve the growth of high-quality TMD materials. However, MoS 2 films deposited by ALD often are amorphous with nonideal stoichiometry and require high-temperature post-deposition annealing. Here, we introduce a modified ALD recipe using Mo(CO) 6 and H 2 S, resulting in controllable linear growth behavior, a S-to-Mo ratio of 2:1, and crystalline films at a temperature as low as 190 °C. The growth mechanisms and key factors leading to this improvement are proposed and complemented by kinetics calculations. This newly developed methodology relies on aligning the process time with the reaction kinetics of carbonyl disassociation. The MoS 2 films prepared herein were shown to be active hydrogen evolution reaction catalysts.

2D materials↗