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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Satellite Power Systems (SPS) concept definition study, exhibit C. Volume 6: In-depth element investigation

Computer assisted design of a gallium arsenide solid state dc-to-RF converter with supportive fabrication data was investigated. Specific tasks performed include: computer program checkout; amplifier comparisons; computer design analysis of GaSa solar cells; and GaAs diode evaluation. Results obtained in the design and evaluation of transistors for the microwave space power system are presented.

Hanley, G.↗
NASA NTRS1993

Bonding Diamond To Metal In Electronic Circuits

Improved technique for bonding diamond to metal evolved from older technique of soldering or brazing and more suitable for fabrication of delicate electronic circuits. Involves diffusion bonding, developed to take advantage of electrically insulating, heat-conducting properties of diamond, using small diamond bars as supports for slow-wave transmission-line structures in traveling-wave-tube microwave amplifiers. No fillets or side coats formed because metal bonding strips not melted. Technique also used to mount such devices as transistors and diodes electrically insulated from, but thermally connected to, heat sinks.

Jacquez, Andrew E.↗
NASA NTRS1994

Active-Pixel Cosmic-Ray Sensor

Cosmic-ray sensor comprises planar rectangular array of lateral bipolar npn floating-base transistors each of which defines pixel. Collector contacts of all transistors in each row connected to same X (column) line conductor; emitter contacts of all transistors in each column connected to same Y (row) line conductor; and current in each row and column line sensed by amplifier, output of which fed to signal-processing circuits.

Fossum, Eric R.↗
NASA NTRS2001

The HP 85192B EEFet3 GaAs FET Nonlinear Model Used in the High Efficiency Microwave Power Amplifier (HEMPA)

Most nonlinear circuit analysis programs that exist today were designed primarily for transient analysis. By incorporating more accurate models in simulation programs, accurate predictions of GaAs field effect transistors (FET) behavior can be accomplished. However, should the designer need to simulate GaAs FETs that operate at high DC-to-RF conversion efficiencies, a more sophisticated model is needed. A relevant and appropriate method is called harmonic-balance, as described by Quere et al.

Sims, William Herbert, III↗
NASA NTRS2007

Broadband Characterization of a 100 to 180 GHz Amplifier

Atmospheric science and weather forecasting require measurements of the temperature and humidity vs. altitude. These sounding measurements are obtained at frequencies close to the resonance frequencies of oxygen (118 GHz) and water (183 GHz) molecules. We have characterized a broadband amplifier that will increase the sensitivity of sounding and other instruments at these frequencies. This study demonstrated for the first t1me continuous low noise amplification from 100 to 180 GHz. The measured InP monolithic millimeter-wave Integrated circuit (MMIC) amplifier had more than 18 dB of gain from 100 to 180 GHz and 15 dB of gain up to 220 GHz. This is the widest bandwidth low noise amplifier result at these frequencies to date. The circuit was fabricated in Northrop Grumman Corporation 35 nm InP high electron mobility transistor (HEMT).

high electron mobility transistors (HEMT's)↗
NASA NTRS1974

Full wave modulator-demodulator amplifier apparatus

A full-wave modulator-demodulator apparatus is described including an operational amplifier having a first input terminal coupled to a circuit input terminal, and a second input terminal alternately coupled to the circuit input terminal. A circuit is ground by a switching circuit responsive to a phase reference signal and the operational amplifier is alternately switched between a non-inverting mode and an inverting mode. The switching circuit includes three field-effect transistors operatively associated to provide the desired switching function in response to an alternating reference signal of the same frequency as an AC input signal applied to the circuit input terminal.

Black, J. M.↗
NASA NTRS2007

Multiloop Rapid-Rise/Rapid Fall High-Voltage Power Supply

A proposed multiloop power supply would generate a potential as high as 1.25 kV with rise and fall times <100 s. This power supply would, moreover, be programmable to generate output potentials from 20 to 1,250 V and would be capable of supplying a current of at least 300 A at 1,250 V. This power supply is intended to be a means of electronic shuttering of a microchannel plate that would be used to intensify the output of a charge-coupled-device imager to obtain exposure times as short as 1 ms. The basic design of this power supply could also be adapted to other applications in which high voltages and high slew rates are needed. At the time of reporting the information for this article, there was no commercially available power supply capable of satisfying the stated combination of voltage, rise-time, and fall-time requirements. The power supply would include a preregulator that would be used to program a voltage 1/30 of the desired output voltage. By means of a circuit that would include a pulse-width modulator (PWM), two voltage doublers, and a transformer having two primary and two secondary windings, the preregulator output voltage would be amplified by a factor of 30. A resistor would limit the current by controlling a drive voltage applied to field-effect transistors (FETs) during turn-on of the PWM. Two feedback loops would be used to regulate the high output voltage. A pulse transformer would be used to turn on four FETs to short-circuit output capacitors when the outputs of the PWM were disabled. Application of a 0-to-5-V square to a PWM shut-down pin would cause a 20-to-1,250-V square wave to appear at the output.

Bearden, Douglas↗
DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1990

Electro-optic network analyzer

The bandwidth of frequency domain measurement methods of electrical signals has usually been far greater than the bandwidth of time domain methods. The primary limits of the time domain approach have been the 20 to 30 GHz bandwidth limit for electronic waveform acquisition instrumentation, and the lack of usable electrical pulse generators for excitation of a test device. The bandwidth of frequency domain network analysis appears to have reached a plateau of between 100 to 200 GHz, while time domain measurement have improved markedly in both bandwidth and sensitivity with the introduction of the pulsed laser based electro-optic sampling approach. Network analysis or the measurement of device scattering parameters provides information necessary to the design of electronic network such as high frequency amplifiers, mixers, and phase shifter. The bandwidth of frequency domain network analysis is currently being exceeded by the next generations of high frequency transistors and devices. Thus the electro-optic approach is a natural means of extending network analysis into the range above 100 GHz by employing time domain methods. In this approach, a suitable electrical excitation pulse is generated and propagated along a transmission line toward a test device. In the picosecond domain, laser driven photoconductive switches provide a unique method of generating electrical transients. Several materials were studied for generating short electrical pulses using photoconductive switches. The various semiconductive materials tested for photoconductive switching, and the electro-optic measurement technique used to characterize the material performance are described.

Jackson, Todd A.↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗
NASA NTRS2000

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

Weinreb, S.↗
NASA NTRS1975

Voltage monitoring system

A description is given of a system for monitoring the voltage at a remote location and determining when the voltage exceeds upper and lower levels. The system includes transmission lines for transmitting the voltage back to a central station and applying such to an amplifier having a pair of outputs. One of the outputs of the amplifier is applied to an oscillograph. The other output is fed through an isolation transformer, a full wave rectifier, to a pair of unijunctional transistor circuits for producing pulses when the voltage exceeds or drops below a predetermined level. These pulses, in turn, energize a relay which turns on the oscillograph for recording the voltages being monitored.

Canicatti, C. L.↗
NASA NTRS1995

Integrated Cryogenic Satellite Communications Cross-Link Receiver Experiment

An experiment has been devised which will validate, in space, a miniature, high-performance receiver. The receiver blends three complementary technologies; high temperature superconductivity (HTS), pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuits (MMIC), and a miniature pulse tube cryogenic cooler. Specifically, an HTS band pass filter, InP MMIC low noise amplifier, HTS-sapphire resonator stabilized local oscillator (LO), and a miniature pulse tube cooler will be integrated into a complete 20 GHz receiver downconverter. This cooled downconverter will be interfaced with customized signal processing electronics and integrated onto the space shuttle's 'HitchHiker' carrier. A pseudorandom data sequence will be transmitted to the receiver, which is in low Earth orbit (LEO), via the Advanced Communication Technology Satellite (ACTS) on a 20 GHz carrier. The modulation format is QPSK and the data rate is 2.048 Mbps. The bit error rate (BER) will be measured in situ. The receiver is also equipped with a radiometer mode so that experiment success is not totally contingent upon the BER measurement. In this mode, the receiver uses the Earth and deep space as a hot and cold calibration source, respectively. The experiment closely simulates an actual cross-link scenario. Since the receiver performance depends on channel conditions, its true characteristics would be masked in a terrestrial measurement by atmospheric absorption and background radiation. Furthermore, the receiver's performance depends on its physical temperature, which is a sensitive function of platform environment, thermal design, and cryocooler performance. This empirical data is important for building confidence in the technology.

Romanofsky, R. R.↗
NASA NTRS2007

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Hunter, Gary W.↗
NASA NTRS2006

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C

While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

Neudeck, Philip G.↗
NASA NTRS1996

Highly Efficient Amplifier for Ka-Band Communications

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Source record↗
NASA NTRS2008

The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124 Operational Amplifier

Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs.

Buchner, Stephen↗
NASA NTRS1979

High-Speed, high-power, switching transistor

Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.

Carnahan, D.↗