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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Vibration suppression using a constrained rate-feedback-threshold control strategy

A finite time, minimum force rate-feedback-threshold controller is developed to bring a system with or without known external disturbances back into an 'allowable' state bound in finite time. The disturbances are assumed to be expandable in terms of Fourier series. The optimal control is defined by a two-point boundary value problem coupled to a set of definite integral constraints. Quasi-closed form solutions are derived which replace the solution of the two-point boundary value problem and definite integral constraints with the solution of algebraic equations and the calculation of matrix exponentials. Examples are provided which demonstrate the threshold control technique and compare the quasi-closed form solutions with numerical and MACSYMA generated exact solutions.

Zimmerman, D. C.↗
NASA NTRS1992

Aerosol-induced laser breakdown thresholds - Effect of resonant particles

Laser intensity thresholds for the onset of stimulated Raman scattering and the breakdown in resonant micron-sized droplets are reduced to below those for nonresonant droplets by a factor of about 3. This reduction is most likely caused by the enhancement of electromagnetic energy (photon) densities within the droplets over and above that in nonresonant droplets. The magnitude of the threshold reduction for breakdown is consistent with the assertion that: (1) input (pump) wavelength resonances that initiate plasma have cavity Qs of about 10 exp 4; and (2) finite regions of high-electromagnetic-energy density within the droplet, with dimensions of the order of the Debye length, are required to initiate plasma.

Pinnick, R. G.↗
NASA NTRS1991

Does a threshold stress for creep exist in HfC-dispersed NiAl?

Recently it was proposed (Jha et al., 1989; Whittenberger et al., 1990) on the basis of constant velocity testing at 1300 K that dispersion strengthened NiAl composites containing about 4 wt pct HfC possess threshold stresses for creep. Further, 1300 K compression testing has been conducted on NiAl+4HfC, and diametrically opposite behavior has been found: for constant load creep tests a normal power law behavior was observed. However, additional constant velocity testing still indicates that the flow stress is essentially independent of strain rate below 10 exp -6/s. Examination of NiAl+4.3HfC specimens deformed under constant velocity conditions revealed that the original hot extruded small grain structure could be converted to large, elongated grains during testing. Such a transformation appears to be responsible for the apparent threshold stress behavior in HfC dispersed NiAl.

Whittenberger, J. D.↗
NASA NTRS1991

Theoretical temperature-dependent branching ratios and laser thresholds of the 3F4 to 3H6 levels of Tm(3+) in ten garnets

The calculated energy levels, the branching ratios, and the estimated thresholds for thulium operating on the 3F4 to 3H6 transitions are reported. Garnet materials with the general formula A3B2C3O12 are evaluated. Calculations are performed for the A side under the assumption of D2 symmetry. X-ray data available in the literature are used to evaluate the crystal-field components, A sub nm. Even-n components are employed to calculate the crystal-field splittings within the manifold. Thermal occupation factors are determined in a straightforward manner using a Boltzmann distribution for the respective manifolds. Odd-n components are applied to calculate the transition probabilities for electric field transitions. It is determined that the magnetic dipole contributions to the transition probability are comparable to the electric dipole contributions in some cases. Thresholds as a function of the density of thulium atoms are calculated.

Filer, Elizabeth D.↗
NASA NTRS1992

The influence of prior exercise at anaerobic threshold on decompression sickness

This study was conducted to examine the effects of exercise prior to decompression on the incidence of altitude decompression sickness (DCS). In a balanced, two-period, crossover trial, 39 healthy individuals were each exposed twice, without denitrogenation, to an altitude of 6400 m in a hypobaric chamber. Under the experimental condition, subjects exercised at their predetermined anaerobic threshold levels for 30 min each day for 3 d prior to altitude exposure; the other condition was a non-exercise control. Under both conditions, subjects performed exercise simulating space extravehicular activities at altitude for a period of 3 h, while breathing 100 percent oxygen. There were nine preferences (untied responses) for DCS, four under control and five under experimental conditions; all were Type I, pain-only bends. No carry-over effects between exposures was detected, and the test for treatment differences showed p = 0.56 for symptoms. No significant difference in DCS preferences was found after subjects exercised up to their anaerobic threshold levels during the days prior to decompression.

Kumar, K. V.↗
NASA NTRS1993

Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at about 2.0 microns

The first low threshold continuous operation of InGaAs strained layer quantum well lasers at about 2.0 microns is reported. The threshold current density of 5-micron wide and 1.5 mm long ridge waveguide lasers was less than 380 A/sq cm. The external differential quantum efficiency of 1 mm long lasers was as high as 15 percent and laser operation was observed at temperatures as high as 50 C. The lasers are characterized by T(0) = 54 C which is the highest characteristic temperature ever achieved at this wavelength in any material system.

Forouhar, S.↗
NASA NTRS1994

Program For Thresholding In Digital Images

THRTOOL program applies thresholding techniques to Sun rasterfiles. Provides for choice among four methods of thresholding. Written in C language and implemented on Sun series and Silicon Graphics IRIS machines.

Nolf, Scott R.↗
NASA NTRS1994

Proton and helium cyclotron anisotropy instability thresholds in the magnetosheath

Both the protons and the helium ions of the terrestrial magnetosheath typically display T (sub perpendicular) greater than T (sub parallel), where perpendicular to and parallel to denote directions perpendicular and parallel to the background magnetic field. Observations of the highly compressed magnetosheath show an inverse correlation between these ion temperature anisotropies and the parallel proton beta. Computer simulations have demonstrated that these correlations are due to wave-particle scattering by electromagnetic ion cyclotron anisotropy instabilities. These correlations correspond to linear theory thresholds of the proton cyclotron and the helium cyclotron instabilities. This paper uses linear Vlasov theory and the assumption of a constant maximum growth rate to obtain closed-form expressions for these thresholds as a function of the relative helium density and the parallel proton beta in a parameter model of the magnetosheath.

Gary, S. Peter↗
NASA NTRS1994

Star formation thresholds in H II galaxies with H I companions

We present high resolution Very Large Array (VLA) 21 cm line observations of five H II galaxies combined with previous lower resolution data from Taylor et al. (1993) and optical broadband R and H-alpha Charge Coupled Device (CCD) images of the systems. Following Kennicutt (1989) we calculated the threshold H I surface density for star formation for the H II galaxies and compared the location and shape of this predicted threshold density contour with the optical shape of the galaxies. We find generally a good correlation between these two, although a constant density contour of 10(exp 21)/sq cm fits the images of the optical galaxies equally as well. The H I synthesis observations have revealed that the H II galaxies have sharply peaked H I radial profiles, in contrast to the relatively flattened profiles of low surface brightness (LSB) galaxies, suggesting that large central concentrations of gas are a necessary condition for the occurrence of bursts of massive star formation seen in H II galaxies. These observations are consistent with the hypothesis that LSB galaxies represent the quiescent phase of H II galaxies, if a suitable mechanism exists (such as galaxy interactions) to cause H I to concentrate at the center of LSB galaxies prior to the onset of the burst of star formation. However, it is noted that the H II galaxies (and dwarf galaxies in general) span a relatively large range in mass. Since many properties correlate with mass (e.g., gas mass fraction), we point out that great care needs to be taken in choosing the proper comparison samples of LSB and H II galaxies.

Taylor, Christopher L.↗
NASA NTRS1997

Atomic, Molecular, and Optical Physics: Optical Excitation Function of H(1s-2p) Produced by electron Impact from Threshold to 1.8 keV

The optical excitation function of prompt Lyman-Alpha radiation, produced by electron impact on atomic hydrogen, has been measured over the extended energy range from threshold to 1.8 keV. Measurements were obtained in a crossed-beams experiment using both magnetically confined and electrostatically focused electrons in collision with atomic hydrogen produced by an intense discharge source. A vacuum-ultraviolet mono- chromator system was used to measure the emitted Lyman-Alpha radiation. The absolute H(1s-2p) electron impact excitation cross section was obtained from the experimental optical excitation function by normalizing to the accepted optical oscillator strength, with corrections for polarization and cascade. Statistical and known systematic uncertainties in our data range from +/- 4% near threshold to +/- 2% at 1.8 keV. Multistate coupling affecting the shape of the excitation function up to 1 keV impact energy is apparent in both the present experimental data and present theoretical results obtained with convergent close- coupling (CCC) theory. This shape function effect leads to an uncertainty in absolute cross sections at the 10% level in the analysis of the experimental data. The derived optimized absolute cross sections are within 7% of the CCC calculations over the 14 eV-1.8 keV range. The present CCC calculations converge on the Bethe- Fano profile for H(1s-2p) excitation at high energy. For this reason agreement with the CCC values to within 3% is achieved in a nonoptimal normalization of the experimental data to the Bethe-Fano profile. The fundamental H(1s-2p) electron impact cross section is thereby determined to an unprecedented accuracy over the 14 eV - 1.8 keV energy range.

James, G. K.↗
NASA NTRS2000

Fuzzy Behavior Modulation with Threshold Activation for Autonomous Vehicle Navigation

This paper describes fuzzy logic techniques used in a hierarchical behavior-based architecture for robot navigation. An architectural feature for threshold activation of fuzzy-behaviors is emphasized, which is potentially useful for tuning navigation performance in real world applications. The target application is autonomous local navigation of a small planetary rover. Threshold activation of low-level navigation behaviors is the primary focus. A preliminary assessment of its impact on local navigation performance is provided based on computer simulations.

Tunstel, Edward↗
NASA NTRS2000

Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides

In this paper for the first time we study the influence of the polysilicon gate on the random dopant induced threshold voltage fluctuations in sub 100 nm MOSFETs with tunnelling gate oxides. This is done by using an efficient 3D 'atomistic' simulation technique described elsewhere. Devices with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveale that the polysilicon gate is responsible for a substantial fraction of the threshold voltage fluctuations in both devices when the gate oxide is scaled to tunnelling thickness in the range of 1 - 2 nm.

Asenov, Asen↗
NASA NTRS1999

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub 50 nm MOSFETs: a Statistical 3D 'Atomistic' Simulation Study

A 3D 'atomistic' simulation study of random dopant induced threshold voltage fluctuations and lowering in sub 50 nm MOSFETs is presented. The attention is focused mainly on devices with 30 nm effective channel length which represent the expected level of scaling at the end of the Silicon Roadmap. An efficient algorithm, based on a single 3D ap solution of the Poisson equation and a simplified current continuity equation, is used in the simulations. Large samples of microscopically different devices (typically 200) arc used in order to obtain statistically reliable results. The influence of different aspects of the conventional MOSFET design on the threshold voltage fluctuations and lowering are investigated. Results for fluctuation resistant device architectures based on low-doped epitaxial channel MOSFETs are also presented.

Asenov, Asen↗
NASA NTRS1999

Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETs

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

Asenov, Asen↗
NASA NTRS1998

Octave-Band Thresholds for Modeled Reverberant Fields

Auditory thresholds for 10 subjects were obtained for speech stimuli reverberation. The reverberation was produced and manipulated by 3-D audio modeling based on an actual room. The independent variables were octave-band-filtering (bypassed, 0.25 - 2.0 kHz Fc) and reverberation time (0.2- 1.1 sec). An ANOVA revealed significant effects (threshold range: -19 to -35 dB re 60 dB SRL).

Begault, Durand R.↗
NASA NTRS2003

On Generating Fatigue Crack Growth Thresholds

The fatigue crack growth threshold, defining crack growth as either very slow or nonexistent, has been traditionally determined with standardized load reduction methodologies. These experimental procedures can induce load history effects that result in crack closure. This history can affect the crack driving force, i.e. during the unloading process the crack will close first at some point along the wake or blunt at the crack tip, reducing the effective load at the crack tip. One way to reduce the effects of load history is to propagate a crack under constant amplitude loading. As a crack propagates under constant amplitude loading, the stress intensity factor range, Delta K, will increase, as will the crack growth rate. da/dN. A fatigue crack growth threshold test procedure is experimentally validated that does not produce load history effects and can be conducted at a specified stress ratio, R. The authors have chosen to study a ductile aluminum alloy where the plastic deformations generated during testing may be of the magnitude to impact the crack opening.

Forth, Scott C.↗
NASA NTRS2002

Generating Fatigue Crack Growth Thresholds with Constant Amplitude Loads

The fatigue crack growth threshold, defining crack growth as either very slow or nonexistent, has been traditionally determined with standardized load reduction methodologies. Some experimental procedures tend to induce load history effects that result in remote crack closure from plasticity. This history can affect the crack driving force, i.e. during the unloading process the crack will close first at some point along the wake, reducing the effective load at the crack tip. One way to reduce the effects of load history is to propagate a crack under constant amplitude loading. As a crack propagates under constant amplitude loading, the stress intensity factor, K, will increase, as will the crack growth rate, da/dN. A fatigue crack growth threshold test procedure is developed and experimentally validated that does not produce load history effects and can be conducted at a specified stress ratio, R.

Forth, Scott C.↗
NASA NTRS2003

Modeling the Interactions Between Multiple Crack Closure Mechanisms at Threshold

A fatigue crack closure model is developed that includes interactions between the three closure mechanisms most likely to occur at threshold; plasticity, roughness, and oxide. This model, herein referred to as the CROP model (for Closure, Roughness, Oxide, and Plasticity), also includes the effects of out-of plane cracking and multi-axial loading. These features make the CROP closure model uniquely suited for, but not limited to, threshold applications. Rough cracks are idealized here as two-dimensional sawtooths, whose geometry induces mixed-mode crack- tip stresses. Continuum mechanics and crack-tip dislocation concepts are combined to relate crack face displacements to crack-tip loads. Geometric criteria are used to determine closure loads from crack-face displacements. Finite element results, used to verify model predictions, provide critical information about the locations where crack closure occurs.

Newman, John A.↗