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Design and evaluation of cylindrical out-of-pile thermionic converter test vehicle to determine performance of tungsten emitters with preferred crystal orientation
Three types of CVD tungsten (fluoride-produced, chloride-produced and the combination of the two which is termed duplex) were evaluated to determine their weldability, high temperature strength and structural stability during 5000 hour exposure to temperatures of 1540 C and 1700 C. Each type of CVD tungsten could be successfully electron beam welded but the results for the chloride product were not as satisfactory as those of the other two materials. The high temperature strength behavior of the three materials did not differ greatly. However a large difference was noted for the grain growth behavior of the two basic CVD tungsten materials. Fluoride tungsten was found to be relatively stable while for the most part the grain size of chloride tungsten increased appreciably. The examination of freshly fractured surfaces with a scanning electron microscope revealed numerous bubbles in the fluoride material following its exposure to 1700 C for 5000 hours. Less severe thermal treatments produced relatively few bubbles in this material. Only at certain locations within the chloride material associated with the interruption of tungsten were bubbles noted.
Rhenium thermionic emitters were prepared by the pyrolysis of rhenium chlorides formed by the chlorination of rhenium pellets. The impurity contents, microstructures, degrees of (0001) preferred crystal orientation, and vacuum electron work functions of these emitters were determined as a function of deposition parameters, such as substrate temperature, rhenium pellet temperature and chlorine flow rate. A correlation between vacuum electron work function and degree of (0001) preferred crystal orientation was established. Conditions for depositing porosity-free rhenium emitters of high vacuum electron work functions were defined. Finally, three cylindrical rhenium emitters were prepared under the optimum deposition conditions.
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Three types of CVD tungsten (fluoride-produced, chloride-produced, and a layered composite of the two-termed duplex) were evaluated to determine their high-temperature strength and microstructural stability following 5000-hr exposure to temperatures of 1540 and 1700 C. At the highest temperatures investigated (1540 and 1700 C), the tensile strengths of the two basic materials were essentially equal. At lower temperatures, chloride tungsten possessed lower yield strength but higher ultimate strength than fluoride tungsten while the behavior of the duplex material was generally intermediate. Apparent anomalies in high-temperature elongation behavior are explained on the basis of grain boundary cavity formation and recrystallization. The grain size of fluoride tungsten changed only slightly following 5000-h treatment at 1700 C. In contrast, chloride tungsten possessed both poor resistance to grain growth and an accompanying relatively high ductile-brittle transition temperature.
Formation of large particles on substrate is eliminated by actively exhausting reacted gases. Effluent gas backflow is prevented by pumping in curtain of nitrogen above fresh reactive gases from several directions.
A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.
Reactor utilizes multiple stacked trays compactly arranged in paths of horizontally channeled reactant gas streams. Design allows faster and more efficient deposits of film on substrates, and reduces gas and energy consumption. Lack of dead spots that trap reactive gases reduces reactor purge time.
High-purity polycrystalline silicon was produced in an experimental, intermediate and advanced CVD reactor. Data from the intermediate and advanced reactors confirmed earlier results obtained in the experimental reactor. Solar cells were fabricated by Westinghouse Electric and Applied Solar Research Corporation which met or exceeded baseline cell efficiencies. Feedstocks containing trichlorosilane or silicon tetrachloride are not viable as etch promoters to reduce silicon deposition on bell jars. Neither are they capable of meeting program goals for the 1000 MT/yr plant. Post-run CH1 etch was found to be a reasonably effective method of reducing silicon deposition on bell jars. Using dichlorosilane as feedstock met the low-cost solar array deposition goal (2.0 gh-1-cm-1), however, conversion efficiency was approximately 10% lower than the targeted value of 40 mole percent (32 to 36% achieved), and power consumption was approximately 20 kWh/kg over target at the reactor.
Dichlorosilane (DCS) was used as the feedstock for an advanced decomposition reactor for silicon production. The advanced reactor had a cool bell jar wall temperature, 300 C, when compared to Siemen's reactors previously used for DCS decomposition. Previous reactors had bell jar wall temperatures of approximately 750 C. The cooler wall temperature allows higher DCS flow rates and concentrations. A silicon deposition rate of 2.28 gm/hr-cm was achieved with power consumption of 59 kWh/kg. Interpretation of data suggests that a 2.8 gm/hr-cm deposition rate is possible. Screening of lower cost materials of construction was done as a separate program segment. Stainless Steel (304 and 316), Hastalloy B, Monel 400 and 1010-Carbon Steel were placed individually in an experimental scale reactor. Silicon was deposited from trichlorosilane feedstock. The resultant silicon was analyzed for electrically active and metallic impurities as well as carbon. No material contributed significant amounts of electrically active or metallic impurities, but all contributed carbon.
Boron-carbon compounds have been deposited by the flow of carbon tetrachloride and boron trichloride, in the presence of a large excess of hydrogen, over a graphite surface maintained at 1000-1300 C. Deposits were formed on either an RF-heated disc or a tube or insert heated by a resistance furnace. Crystalline materials ranging in composition from B2C to B17C have been obtained.
Composition-dependent optical and electrical properties of L-CVD (Al2O3)1-c-(AlN)c composite films are examined. The optical properties exhibit a continuous change from Al2O3 to AlN with increasing value of the composition parameter c from zero to one. There is a critical concentration value of about 0.3 below and above which Al2O3- and AlN-like optical properties are observed. The impurity absorption regions are 5.1-6.7 eV for Al2O32 and 4.6-6.0 for AlN, while the energy gap is about 6.7 eV for Al2O3 and 6.0 eV for AlN. The electrical properties of Al-insulator n-Si MIS structures display externally programmable states when bulk-controlled electron emission occurs from the traps. In the high-field region a persistent polarization field is established within the insulator. C-V characteristics of the samples are more sensitive to the concentration factor c than the I-V characteristics. A large clockwise hysteresis is observed for AlN, but a smaller counterclockwise one is observed for Al2O3.
A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.
In this paper, a combined fluid-mechanics, mass-transport, and chemistry model describing CVD in an open-tube atmospheric-pressure flow reactor is developed. The model allows gas-phase reactions to proceed to equilibrium and accounts for finite reaction rates at the surface of the deposition substrate. This model is a useful intermediate step toward a model employing fully rate-limited chemistry. The model is used to predict the effects of free convection on flow patterns, temperature and species-concentration profiles, and local deposition rates for silicon deposited by silane pyrolysis. These results are discussed in terms of implications for CVD of silicon and other compounds, microgravity studies, and techniques for testing and validating the model.
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This paper reports the results of studies of the kinetics of remote (indirect) plasma enhanced low pressure CVD growth of SiO2 on Si and InP and of the in situ characterization of the electrical surface properties of InP during CVD processing. In the latter case photoluminescence was employed as a convenient and sensitive noninvasive method for characterizing surface trap densities. It was determined that, provided certain precautions are taken, the growth of SiO2 occurs in a reproducible and systematic fashion that can be expressed in an analytic form useful for growth rate prediction. Moreover, the in situ photoluminescence studies have yielded information on sample degradation resulting from heating and chemical exposure during the CVD growth.
In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.