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At least 253 records · Page 14

Simulation and design of a compact GaAs based tunable dual-wavelength diode laser system

We present our design of a compact, integrated and tunable dual-wavelength diode laser system emitting around 785 nm, which is of interest for several applications like Raman spectroscopy and the generation of THz radiation. To achieve a more compact device compared to previous GaAs based designs two etch depths are realized, leading to shallowly etched ridge waveguides in regions were optical gain is applied and deeply etched waveguides used to enable compact integrated waveguide components. The device parameters are optimized using a numerically efficient simulation tool for passive waveguides. Subsequently, the entire laser system is further analyzed applying a sophisticated traveling-wave equation based model for active devices giving access to internal intensity and carrier density distributions. It is shown that active laser simulations are crucial to deduce critical and performance limiting design aspects not accessible via an all-passive simulation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Photonic ring resonator notch filters for astronomical OH line suppression

Photonic ring resonator arrays used as notch filters are a promising novel solution to improve the signal-to-noise ratio of ground-based astronomical observations by suppressing OH emission lines in the near-infrared (NIR) wavelength range (0.9-2.5 μm). We aim to fabricate a series of ring resonators connected by a waveguide, each with its resonance wavelength and full-width-half-maximum (FWHM) matched with one of the OH emission lines. The fundamental structure of ring resonator-based notch filters is a ring resonator evanescently coupled to a waveguide. Due to the optical loss of the ring resonator, the transmission of light through the waveguide will be suppressed at the resonance wavelength of the ring resonator. The degree of suppression can be controlled by varying the coupling strength between the waveguide and the ring resonator, while the resonance wavelength can be controlled by the geometry and size of the ring. However, since a single ring resonator has multiple modes each with a different wavelength separated by its free spectral range (FSR), the additional suppression at other wavelengths may undermine the signal. Therefore, the ideal FSR off the ring resonators needs to be larger than the measurement window. For this application, we aim the FSR to be 1 larger than 30 nm . Our initial measurement results revealed two major challenges for this application. First, the FSR of the ring resonators is limited by the bending loss of ring resonators. In a standard 220 nm silicon-on-insulator material platform, the FSR of ring resonators cannot exceed 30 nm; Second, due to the wafer thickness variation and fabrication inaccuracy, the achievable accuracy in the resonance wavelength of a fabricated single ring resonator is only ~1.5 nm. In this work, we report our novel solutions to the above two challenges. For the first one, we have developed a novel structure based on the Vernier effect to greatly raise the FSR of ring resonators. Serially coupled Vernier ring structures is a typical approach to increase the FSR without encountering bending loss, but it requires restrictive matching of the coupling and optical loss of the rings and any imperfect matching can result in even noisier signals. On the contrary, our structure, as shown in shown in Fig. 1, does not require the restrictive matching. The signals of two output ports in our structure marked in Fig. 1 will be added together to form the final output signal, and Fig. 2 shows the finite-difference time-domain (FDTD) simulation results of the final output signal. As can be seen, the FSR of the entire structure is well-beyond 60 nm with little noise at other wavelengths. For the second one, we have developed an easy-to-implement method to permanently tune the resonance wavelengths of ring resonators within 0.1 nm accuracy. The tuning mechanism is based on the property of hydrogen silsesquioxane (HSQ) resist. As a negative tone electron beam resist, HSQ upon exposure will cross-link and eventually form SiO2. The refractive 2 index of HSQ resist and formed SiO2 are slightly different , enabling the tuning. By having a thin layer of HSQ resist on top of ring resonator structures followed by SiO2 cladding, the resonance wavelengths of ring resonators can be post-tuned Advances in Optical Astronomical Instrumentation 2019, edited by Simon Ellis, Céline d'Orgeville, Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 23 Sep 2020 Terms of Use: https://www.spiedigitallibrary.org/terms-of-use through electron beam exposure. We have found that, within 5 nm tuning range, the resonance wavelength shift and dosage applied obeys a linear relationship. So a simple calibration beforehand can result in resonance wavelength tuning within 0.1 nm accuracy. The transmission spectra of a 3-ring device before and after tuning is shown in Fig. 3.

Astronomical optics↗

Milliwatt-level UV generation using sidewall poled lithium niobate

Integrated coherent sources of ultra-violet (UV) light are essential for a wide range of applications, from ion-based quantum computing and optical clocks to gas sensing and microscopy. Recently, approaches that use frequency upconversion have received considerable attention. Among these, the integrated thin-film lithium niobate (TFLN) photonic platform shows particular promise. However, to date, the high propagation losses and lack of reliable techniques for consistent poling of cm-long waveguides with small poling periods have impeded progress. Here, we present a sidewall poled lithium niobate (SPLN) waveguide approach that overcomes these obstacles and results in a two-orders-of-magnitude increase in generated UV power. We demonstrate SPLN waveguides featuring record-low propagation losses of 2.3 dB/cm, complete domain inversion across the waveguide cross-section, and an optimum 50% duty cycle, resulting in a record-high normalized conversion efficiency of 5050%W$^{−1}$cm$^{−2}$, and 4.2 mW of generated on-chip power at 390 nm wavelength. This advancement makes the TFLN platform a viable option for high-quality on-chip UV generation, benefiting emerging applications.

Franken, C. A.A. [Harvard U.; Twente U., Enschede]↗

Structural Analysis of the US ITER ECH Transmission Line System

The electron cyclotron heating (ECH) and current drive system is one of the main plasma heating systems for ITER. It uses high-power microwave beams with the power deposition location steerable across the plasma cross section. Microwave power is conveyed via transmission lines (TLs) that run from the gyrotrons in the radio frequency building through the assembly hall and tokamak building to the ECH launchers within the tokamak vacuum vessel. The ECH system includes a vast array of interconnected TL waveguides, in-line components, and support structures.Finite element (FE) modeling provides an essential means of simulating the system, applying loads and determining deflections, rotations, forces, moments, and stresses in order to evaluate various structural and microwave transmission performance metrics. A representative FE model of the overall ECH TL system is developed in ANSYS®. This top-level model defines the centerline of the waveguide system. Waveguide segments are represented by line elements (beams and pipes) with equivalent section properties, and support structures are represented by boundary conditions. A systematic approach is used to model each ECH component with lumped masses and structurally equivalent stiffness matrices or ANSYS superelements.The top-level TL FE model is used to evaluate the various loads (thermal, vacuum, seismic, etc.) and operating scenarios. The top-level model directly calculates stresses in the straight aluminum waveguide segments. The model provides the forces and moments acting on the in-line components for detailed submodel assessments. Displacement results from the top-level analysis feed into a separate microwave performance model to help determine operational efficiency. All TL performance and thermal-structural requirements are met, as specified by the applicable codes and standards, and successfully documented in numerous technical reports and demonstrated at the final design review.

Shanmugasundaram, Aravind↗

Thin liquid film as an optical nonlinear-nonlocal medium and memory element in integrated optofluidic reservoir computer

Understanding light–matter interaction lies at the core of our ability to harness physical effects and to translate them into new capabilities realized in modern integrated photonics platforms. Here, we present the design and characterization of optofluidic components in an integrated photonics platform and computationally predict a series of physical effects that rely on thermocapillary-driven interaction between waveguide modes and topography changes of optically thin liquid dielectric film. Our results indicate that this coupling introduces substantial self-induced phase change and transmittance change in a single channel waveguide, transmittance through the Bragg grating waveguide, and nonlocal interaction between adjacent waveguides. We then employ the self-induced effects together with the inherent built-in finite relaxation time of the liquid film, to demonstrate that the light-driven deformation can serve as a reservoir computer capable of performing digital and analog tasks, where the gas–liquid interface operates both as a nonlinear actuator and as an optical memory element.

42 ENGINEERING↗

Pascal conductance series in ballistic one-dimensional LaAlO 3 /SrTiO 3 channels

One-dimensional electronic systems can support exotic collective phases because of the enhanced role of electron correlations. We describe the experimental observation of a series of quantized conductance steps within strongly interacting electron waveguides formed at the lanthanum aluminate–strontium titanate (LaAlO 3 /SrTiO 3 ) interface. The waveguide conductance follows a characteristic sequence within Pascal’s triangle: (1, 3, 6, 10, 15, …) e 2 /h , where e is the electron charge and h is the Planck constant. This behavior is consistent with the existence of a family of degenerate quantum liquids formed from bound states of n = 2, 3, 4, … electrons. Our experimental setup could provide a setting for solid-state analogs of a wide range of composite fermionic phases.

Science & Technology - Other Topics↗

High-efficiency second harmonic generation of blue light on thin-film lithium niobate

The strength of interactions between photons in a χ (2) nonlinear optical waveguide increases at shorter wavelengths. These larger interactions enable coherent spectral translation and light generation at a lower power, over a broader bandwidth, and in a smaller device: all of which open the door to new technologies spanning fields from classical to quantum optics. Stronger interactions may also grant access to new regimes of quantum optics to be explored at the few-photon level. One promising platform that could enable these advances is thin-film lithium niobate (TFLN), due to its broad optical transparency window and possibility for quasi-phase matching and dispersion engineering. In this Letter, we demonstrate second harmonic generation of blue light on an integrated thin-film lithium niobate waveguide and observe a conversion efficiency of η 0 = 33, 000%/W- cm 2 , significantly exceeding previous demonstrations.

Park, Taewon↗

Statistical mechanics and pressure of composite multimoded weakly nonlinear optical systems

Statistical mechanics can provide a versatile theoretical framework for investigating the collective dynamics of weakly nonlinear-wave settings that can be utterly complex to describe otherwise. In optics, composite systems arise due to interactions between different frequencies and polarizations. The purpose of this work is to develop a thermodynamic theory that takes into account the synergistic action of multiple components. We find that the type of the nonlinearity involved can have important implications in the thermalization process and, hence, can lead to different thermal equilibrium conditions. Importantly, we derive closed-form expressions for the actual optomechanical pressure that is exerted on the system. In particular, the total optomechanical pressure is the sum of the partial pressures due to each component. Our results can be applied to a variety of weakly nonlinear optical settings such as multimode fibers, bulk waveguides, photonic lattices, and coupled microresonators. We present two specific examples, where two colors interact in a one-waveguide array with either a cubic or quadratic nonlinearity.

Efremidis, Nikolaos K. (ORCID:0000000298300268)↗

Integrated dispersion compensated mode-locked quantum dot laser

Quantum dot lasers are excellent on-chip light sources, offering high defect tolerance, low threshold, low temperature variation, and high feedback insensitivity. Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits. We present here, for the first time to our knowledge, a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures. This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si. As an illustration of the potential of this platform, we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror. Due to the dispersion compensation effect of the waveguide mirror, the pulse width of the mode-locked laser is reduced by a factor of 2.8.

Zhang, Zeyu (ORCID:0000000271576272)↗

Parameters of fast and high-yield InAs/GaAs quantum dot semiconductor scintillator

InAs quantum dots (QDs) embedded into a waveguiding GaAs semiconductor matrix may produce scintillation detectors with exceptional speed and yield, making them valuable for nuclear security, medical imaging, and high energy physics applications. In this work, we developed thick (~25 μm) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. Here, the bulk GaAs acts as a stopping material for incident particles and as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (< 1 cm –1 ) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from α-particles were analyzed with an external photodiode (PD) and an integrated PD which provided an improved optical coupling. The mean charge collected by the integrated PD corresponded to 3 × 10 4 photoelectrons per 1 MeV of deposited energy, or ~13% of the theoretically achievable light yield. Combined with the previously measured QD scintillation time of 0.3-0.6 ns, this makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported.

36 MATERIALS SCIENCE↗

ESTIMATION OF THE WAKEFIELD RESONANT FREQUENCY USING DIFFERENT SIMULATION TOOLS

Reliable and fast wakefield calculations are important for beam dynamics and THz generation in accelerators. We compare approaches and limitations with different available simulation tools and compare results. As an example, we analyse a cylindrical corrugated waveguide with narrower and wider radii of 5 and 6 mm, and aperture width and periodicity of 1 and 2 mm using ABCI by KEK and ANSYS HFSS simulation software. First, ABCI was used to determine the resonant frequency of the cylindri-cal corrugated waveguide with different lengths. The corresponding results were taken as a reference to exam-ine the simulation method in the ANSYS HFSS environ-ment. The eigenmode solver of ANSYS HFSS was used to determine different resonant frequencies. This was fol-lowed by examining a cylindrical corrugated waveguide that was implemented having a length of 17 mm for dif-ferent conductor settings. The corresponding waveguide was fed by a plane wave having a resonant frequency that satisfies the intersection of the light line and dispersion curve of the corresponding mode. The analysis showed that the maximum loss factor was achieved at 39.20 and 40.07 GHz using ANSYS HFSS simulation data for differ-ent conductors, whereas ABCI resulted in 38.50 GHz. The talk will present the results gathered by different simula-tion setups implemented in ANSYS HFSS.

Unutmaz, Muhammed [SLAC National Accelerator Labor↗

Performance of Scintillation Detectors Based on Quantum Dots in a Semiconductor Matrix (Final Technical Report)

InAs Quantum Dots (QDs) embedded into GaAs semiconductor waveguide have unique scintillation properties, valuable for nuclear security, medical imaging, and high energy physics. In this work, we developed thick (~25um) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. In this type of detector, the GaAs matrix acts as a stopping material for charged particles or photons generating electrons captured by the QDs acting as luminescence centers. The QD medium is designed to provide fast capture of electrons into QDs (few ps), high QD luminescence efficiency at room temperature (>50%), and strong red-shift of photoluminescence (PL) from the GaAs absorption edge (>250nm). Typical devices consist of a 10-25um thick GaAs layer with embedded sheets of modulation p-type doped InAs QDs and an InGaAs photodetector tuned to the QD emission wavelength. The thick GaAs layer acts also as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (~1cm -1 ) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from α-particles were analyzed with both an external photodiode (PD) and an integrated PD which provided an improved optical coupling. In the former case, the external InGaAs PD was air-coupled to the scintillator and had the light collection efficiency of about 1% corresponding to limited light extraction through a planar interface with air due to total internal reflection. The mean charge collected by the integrated PD was in the range of (3÷5)×10 4 photoelectrons per 1 MeV of deposited energy, or ~13-20% of the theoretically achievable light yield. Timing of the integrated device was measured by wire-bonding it to the input of an 8 GHz IC. The scintillation response shows an extremely fast 0.3-0.6 ns decay constant and about 40-70 ps time resolution, limited by the system noise. The combined light yield and decay time makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported making it valuable for high energy physics and medical imaging applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Evanescently coupled piezoelectric acoustic devices

An electro-acoustic device includes a plurality of suspended, piezoelectric, acoustically waveguiding membranes supported in a common plane. An input transducer coupled to one of the waveguiding membranes converts input electrical signals to traveling-wave acoustic signals. An output transducer coupled to one of the waveguiding membranes converts acoustic signals to electrical signals. At least two of the waveguiding membrane have parallel straight sections that are longer than a guided acoustic wavelength and that are mutually separated by an air gap having a width less than the guided acoustic wavelength.

36 MATERIALS SCIENCE↗

CWDM transmit module for wavelength tuning and tracking

A photonic integrated circuit (PIC) includes a semiconductor substrate with a main bus waveguide disposed within the substrate. Two or more ring lasers are disposed within the substrate and are optically coupled to the main bus waveguide. The ring lasers have a wavelength control mechanism allowing change of a lasers emitted wavelength. A wavelength selective filter is optically coupled to the bus waveguide. A control circuit is electronically coupled to each wavelength control mechanism, and the wavelength selective filter. The control circuit in conjunction with the selective filter allows monitoring of a ring laser's wavelength on the main bus waveguide. Based on a determined wavelength, the control circuit may change a ring laser wavelength to a desired wavelength to achieve a desired wavelength spacing for each of the ring lasers. The PIC may be integrated as a coarse wave-length division multiplexing (CWDM) transmit module.

42 ENGINEERING↗

Spin waves in YIG based magnonic networks: Design and technological aspects

Microwaveguides for spin waves based on yttrium iron garnet films and cross-like structures built on such waveguides are experimentally studied. Additionally, effects of the waveguides geometry, location of the microantennas for excitation and detection of the spin waves, and geometry of the waveguides junctions on the spin wave excitation and propagation efficiency are discussed.

36 MATERIALS SCIENCE↗

Electromagnetic waves in an optical photonic lattice

Laser light propagation in a photonic lattice consisting of two parallel waveguide arrays is theoretically studied using the coupled mode method, with the interaction of each waveguide with the nearest neighbours and between the waveguides of the arrays being taken into account. Analytical expressions are obtained that make it possible to accurately predict the presence of localisation of light depending on the coupling constants. Particular solutions of a system of coupled waves are found, which describe strongly localised light propagating without transverse diffraction along the entire lattice at certain values of the coupling constants. The emergence of spatially limited transverse diffraction of light is predicted. (integral optics)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Reversible plasmonic switching in a graphene nanoresonator loaded with a core – shell quantum dot

A model of an all-plasmonic switch based on a graphene waveguide integrated with a stub nanoresonator loaded with a quantum dot is considered. Using the full-wave numerical simulation, it is shown that successive on/off switching of the control surface plasmon – polariton wave at the input of the waveguide leads to a change in the phase of the signal plasmon – polariton wave in the nanoresonator by π. This causes reversible switching of the device operation regime – from almost complete blocking to stable transmission of the signal plasmon – polariton wave through the waveguide. The effect is implemented at rates of ∼0.5 THz for infrared electromagnetic waves localised in a device with a switching region of 40 × 20 nm. (paper)

36 MATERIALS SCIENCE↗