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Results for “cell temperature”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

On the cause of the flat-spot phenomenon observed in silicon solar cells at low temperatures and low intensities

A model is presented that explains the 'flat-spot' power-loss phenomenon observed in silicon solar cells operating under deep space (low temperature, low intensity) conditions. Evidence is presented suggesting that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result in localized regions in which the PN junction is destroyed and replaced with a metal-semiconductor-like interface. The effects of thermal treatment, crystallographic orientation, junction depth, and metallization are presented along with a method of preventing the effect through the suppression of vacancy formation at the free surface of the contact metallization. Preliminary data indicating the effectiveness of a TiN diffusion barrier in preventing the effect are also given.

Weizer, V. G.↗
NASA NTRS1987

Temperature variable long path cell for absorption measurements

The design and construction of a long path cell for absorption measurements at temperatures ranging from 215-470 K and at pressures from vacuum to 10 atm are described. The cell consists of three concentric stainless-steel tubes; the innermost tube is 6.5-in. in internal diameter, has a volume of about 47 l, and contains White-type optics, six thermocouples, and a gas input tube; and the outermost tube provides a vacuum Dewar around the inner assembly. The optical design and temperature control system for the long path temperature variable cell are examined. The long path cell is applicable for analyzing temperature and pressure dependence of spectra and reaction rates of gases, and the cell has flow and photolysis capabilities for studying transient species and photochemically initiated reactions. A diagram of the cell is provided.

Shetter, R. E.↗
DOE OSTI2022

Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells

Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 ºC to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Altogether, AgBr seems to be a suitable transport agent and beneficial for device fabrication.

14 SOLAR ENERGY↗
NASA NTRS1985

The cycle life chemistry of ambient-temperature secondary lithium cells

The Jet Propulsion Laboratory is involved in a NASA-sponsored research program to demonstrate the feasibility of ambient-temperature secondary lithium batteries for geosynchronous space applications. Encouraging cycle life has been demonstrated in sealed, cathode-limited laboratory cells. However, the cell capacity declines with cycle life. The results of recent studies of the lithium electrode passivation chemistry, and of conductive diluents for TiS2 cathodes and their possible contribution to capacity decline, are here presented. Technical issues associated with the unique operational requirements of a geosynchronous mission are also described.

Somoano, R.↗
NASA NTRS1983

Moderate temperature rechargeable NaNiS2 cells

A rechargeable sodium battery of the configuration, liquid Na/beta double prime -Al2O3/molten NaAlCl4, NiS2, operating in the temperature range of 170 to 190 C, is described. This battery is capable of delivering or = to 50 W-hr/1b and 1000 deep discharge/charge cycles.

Abraham, K. M.↗
NASA NTRS2008

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Quantum Efficiency↗
NASA NTRS1977

Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures, phase 3

The etch-back epitaxy process is described for producing thin, graded composition GaAlAs layers. The palladium-aluminum contact system is discussed along with its associated problems. Recent solar cell results under simulated air mass zero light and at elevated temperatures are reported and the growth of thin polycrystalline GaAs films on foreign substrates is developed.

Blakeslee, A. E.↗
NASA NTRS1999

Electrolytes for Li-Ion Cells in Low Temperature Applications

A number of upcoming NASA missions require energy storage devices which display high energy density and can effectively operate at low temperature. Lithium-ion batteries have been identified as the most promising technology which can meet these stringent requirements.

electrolytes↗
DOE OSTI2020

Resistance drift in Ge 2 Sb 2 Te 5 phase change memory line cells at low temperatures and its response to photoexcitation

Resistance drift in amorphous Ge 2 Sb 2 Te 5 is experimentally characterized in melt-quenched line cells in the range of 300 K to 125 K and is observed to follow the previously reported power-law behavior with drift coefficients in the range of 0.07 to 0.11 in the dark, linearly decreasing with 1/kT. While these drift coefficients measured in the dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficient (0.05 under illumination vs 0.09 in the dark at 150 K). Periodic on/off switching of light shows a sudden decrease/increase in resistance, attributed to photo-excited carriers, followed by a very slow response (~30 min at 150 K) attributed to contribution of electron traps and slow trap-to-trap charge exchanges. A device-level electronic model is used to relate these experimental findings to gradual charging of electron traps in amorphous Ge 2 Sb 2 Te 5 , which gives rise to growth of a potential barrier for holes in time and, hence, resistance drift.

42 ENGINEERING↗
NASA NTRS1981

On the cause of the flat spot phenomenon observed in silicon solar cells at low temperatures and low intensities

The results of an effort to determine the mechanisms involved in the flat spot (FS) effect are given. It is suggested that the FS effect is due to a resistive metal-semiconductor-like (MSL) interface in parallel with the cell PN junction. Regions responsible for the FS effect lie under the front surface metallization in these cells, where the PN junction has been destroyed and replaced with a metal silicide-semiconductor interface. Such structural changes, which appear to be due to the thermally activated dissolution of the silicon, have been induced in cells as a result of isochronal heat treatments at temperatures between 450 C and 560 C. It has been found that a 650 A layer of Ta2O5 evaporated over the metallization is sufficient to prevent the underlying silicon from pitting during the subsequent heat treatment, although pitting at the metal silicon ambient interface could still be observed.

Weizer, V. G.↗
NASA NTRS1986

Theoretical temperature dependence of solar cell parameters

A simple formulation has been derived for the temperature dependence of cell parameters for any solar cell material. Detailed calculations have been performed for high-quality monocrystalline GaAs, Si and Ge cells. Preliminary experimental data for GaAs and Si cells are close to the calculated values. In general, the higher the energy gap of a material, the small is the temperature dependence of its solar cell parameters.

Fan, John C. C.↗
DOE OSTI2021

Shockley-Queisser analysis of the temperature-efficiency correlation of solar cells in the presence of non-radiative heat transfer

An empirical negative T cell − η correlation has been widely applied, without careful justifications, to evaluate the efficiency ( η ) increase of solar cells due to their temperature ( T cell ) decrease. Here, a framework is introduced to simultaneously compute T cell and η . This model confirms the negative T cell − η correlation if the above-bandgap absorptivity ( α I ) is not suppressed in the optimization of the sub-bandgap reflectivity ( ρ II ) or the infrared emissivity, otherwise it may suggest a positive correlation. It further gives a guideline to enhance η of silicon cells under typical conditions: every 1% increase of α I is equivalent to a 57% increase of ρ II .

14 SOLAR ENERGY↗