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At least 253 records · Page 14

Circuit complexity near critical points

Here, we consider the Bose–Hubbard model in two and three spatial dimensions and numerically compute the quantum circuit complexity of the ground state in the Mott insulator and superfluid phases using a mean field approximation with additional quadratic fluctuations. After mapping to a qubit system, the result is given by the complexity associated with a Bogoliubov transformation applied to the reference state taken to be the mean field ground state. In particular, the complexity has peaks at the O(2) critical points where the system can be described by a relativistic quantum field theory. Given that we use a Gaussian approximation, near criticality the numerical results agree with a free field theory calculation. To go beyond the Gaussian approximation we use general scaling arguments that imply that, as we approach the critical point t → t c , there is a non-analytic behavior in the complexity c 2 (t) of the form |c 2 (t) – c 2 (t c )| ~ |t – t c | νd , up to possible logarithmic corrections. Here d is the number of spatial dimensions and ν is the usual critical exponent for the correlation length ξ ~ |t – t c | –ν . As a check, for d = 2 this agrees with the numerical computation if we use the Gaussian critical exponent $v=\frac{1}{2}$. Finally, using AdS/CFT methods, we study higher dimensional examples and confirm this scaling argument with non-Gaussian exponent ν for strongly interacting theories that have a gravity dual.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Modulation and Modeling of Three-Dimensional Nanowire Assemblies Targeting Gas Sensors with High Response and Reliability

Despite improved sensitivity, simple downsizing of gas-sensing components to randomly arranged nanostructures often faces challenges associated with unpredictable electrical conduction pathways. In the present study, controlled fabrication of three-dimensional (3D) metal oxide nanowire networks is demonstrated that can greatly improve both signal stability and sensor response compared to random nanowire arrays. For example, the highest ever reported H 2 S gas response value, and a 5 times lower relative standard deviation of baseline resistance than that of random nanowires assemblies, are achieved with the ordered 3D nanowire network. Systematic engineering of 3D geometries and their modeling, utilizing equivalent circuit components, provide additional insights into the electrical conduction and gas-sensing response of 3D assemblies, revealing the critical importance of wire-to-wire junction points and their arrangement. Here these findings suggest new design rules for both enhanced performance and reliability of chemical sensors, which may also be extended to other devices based on nanoscale building blocks.

36 MATERIALS SCIENCE↗

Tracking the evolution of processes occurring in silicon anodes in lithium ion batteries by 3D visualization of relaxation times

An unconventional electroanalytical method has been used for tracking processes in silicon anodes in lithium ion batteries: a 3D visualization of relaxation times. Impedance data of the electrodes were collected at different potentials and different cycles during cyclic voltammetry, and were treated by means of the Distribution of Relaxation Times (DRT) method. A 3D visualization of the results allowed to identify the formation of a solid electrolyte interphase on the anode, composed of two layers with different relaxation times. Such findings are not possible by conventional analysis of impedance data by modeling with equivalent circuits, nor by simple DRT alone. Additionally, it was possible to observe that the characteristic relaxation time of the lithiation of the Si anode becomes smaller upon cycling, indicating that the material experiences structural transformations that allow it to lithiate faster. The result is relevant to motivate the use of micron-sized particles in the anode.

25 ENERGY STORAGE↗

Real-time quantum error correction beyond break-even

The ambition of harnessing the quantum for computation is at odds with the fundamental phenomenon of decoherence. The purpose of quantum error correction (QEC) is to counteract the natural tendency of a complex system to decohere. This cooperative process, which requires participation of multiple quantum and classical components, creates a special type of dissipation that removes the entropy caused by the errors faster than the rate at which these errors corrupt the stored quantum information. Previous experimental attempts to engineer such a process faced an excessive generation of errors that overwhelmed the error-correcting capability of the process itself. Whether it is practically possible to utilize QEC for extending quantum coherence thus remains an open question. We answer it by demonstrating a fully stabilized and error-corrected logical qubit whose quantum coherence is significantly longer than that of all the imperfect quantum components involved in the QEC process, beating the best of them with a coherence gain of G=2.27±0.07. Here we achieve this performance by combining innovations in several domains including the fabrication of superconducting quantum circuits and model-free reinforcement learning.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Benchmarking near-term quantum devices with the variational quantum eigensolver and the Lipkin-Meshkov-Glick model

The variational quantum eigensolver is a promising algorithm for noisy intermediate scale quantum (NISQ) computation. Verification and validation of NISQ algorithms' performance on NISQ devices is an important task. Here, we consider the exactly diagonalizable Lipkin-Meshkov-Glick (LMG) model as a candidate for benchmarking NISQ computers. We use the Bethe Ansatz to construct eigenstates of the trigonometric LMG model using quantum circuits inspired by the LMG's underlying algebraic structure. We construct circuits with depth $\mathcal{O}$(N) and $\mathcal{O}$(log 2 N) that can prepare any trigonometric LMG eigenstate of N particles. The number of gates required for both circuits is $\mathcal{O}$(N). The energies of the eigenstates can then be measured and compared to the exactly known answers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A Survey on the Expanding Scope and Interdisciplinary Opportunities for Processing-in-Memory Techniques

Processing-in-Memory (PIM) is emerging as a practical path to overcome the limitations of traditional von Neumann architectures. At its core, PIM systems implement computing primitives such as logic operations and multiply-accumulate acceleration through compute-in-memory, near-memory processing, or hybrid designs. The role of memory cells varies widely across technologies, acting as inputs, outputs, or analog accumulators through bit-lines and sense amplifiers. This diversity creates trade-offs in precision, bandwidth, latency, and programmability, making it difficult to build a unified understanding on the progress of the field. In this survey, we organize recent advances of PIM into three areas. First, we discuss the progress on the architectural optimizations of PIM and its integration with both DRAM and emerging non-volatile memories. Second, we examine how PIM is being used to accelerate key computing domains, including generative AI workloads and high-performance kernels, along with new approaches. Third, we highlight the growing adoption of PIM in computational sciences, where it is being applied to solve interdisciplinary problems such as genome analysis, mRNA quantification, mass spectrometry, quantum circuit simulation, wave modeling, and secure computation. Finally, we synthesize the major challenges that continue to slow PIM adoption, including manufacturing constraints, power delivery, thermal reliability, data consistency, runtime and memory-management coordination, and the difficulty of building portable software abstractions without sacrificing commercial viability. This work provides an updated, structured perspective on PIM’s potential across computing and computational sciences and the barriers that must be solved for it to reach its full impact.

Asifuzzaman, Kazi [Oak Ridge National Laboratory (↗

Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

Grounding related issues are critical for safe and reliable operation of solid-state transformer (SST) in medium-voltage (MV) applications, e.g., solar photovoltaic and energy storage integration, date center, electric vehicle fast charging, etc. This article presents for the first time the issue of additional device voltage stress due to grounding-loop current in current-source SST, using the soft-switching solid-state transformer (S4T) as an example. The S4T features single-stage isolated AC-AC, AC-DC, or DC-DC conversion with full-range ZVS, derived from flyback converter or current-source converter (CSC). However, the flyback operation for CSC-based SST means that magnetizing current flows through the reverse-blocking devices on only one side of the medium-frequency transformer (MFT) at a time. Then, the voltages across the devices, especially those on the other side of the MFT, can be influenced by parasitic current. A parasitic model of a modular S4T (M-S4T) prototype is developed from direct measurements and datasheets. Using the developed parasitic model and equivalent circuits, the causes of the voltage stress are analyzed. A voltage-stress mitigation scheme of connecting additional grounding capacitors is proposed. Damping resistors are also installed to damp out the grounding-loop resonance. A robust parameter design of the proposed scheme is given. The existence of the voltage stress issue and the effectiveness of the proposed scheme are verified experimentally on an MV SiC M-S4T prototype with inherent parameter variations among the five modules in the prototype. Here, both single-module and stacked-module operation are demonstrated during steady state and dynamic conditions up to 4 kV peak.

42 ENGINEERING↗

Attention to quantum complexity

The imminent era of error-corrected quantum computing demands robust methods to characterize quantum state complexity from limited, noisy measurements. We introduce the Quantum Attention Network (QuAN), a classical artificial intelligence (AI) framework leveraging attention mechanisms tailored for learning quantum complexity. Inspired by large language models, QuAN treats measurement snapshots as tokens while respecting permutation invariance. Combined with our parameter-efficient miniset self-attention block, this enables QuAN to access high-order moments of bit-string distributions and preferentially attend to less noisy snapshots. We test QuAN across three quantum simulation settings: driven hard-core Bose-Hubbard model, random quantum circuits, and toric code under coherent and incoherent noise. QuAN directly learns entanglement and state complexity growth from experimental computational basis measurements, including complexity growth in random circuits from noisy data. In regimes inaccessible to existing theory, QuAN unveils the complete phase diagram for noisy toric code data as a function of both noise types, highlighting AI’s transformative potential for assisting quantum hardware.

Kim, Hyejin [Cornell Univ., Ithaca, NY (United Sta↗

Magnetron R&D for high efficiency CW RF sources for industrial accelerators

The scheme of using high-efficiency magnetrons to drive radiofrequency accelerators has been demonstrated at 2450 MHz in CW mode *. Magnetron test stands at JLab and GA have been set up to further test the noise figure and the locking speed of the injection phase-lock method. For higher power applications, power combining experiments using a TM010 cavity-type combiner and a magic tee for the binary combiner while using a single clean injection signal has been carried out at 2450 MHz. The frequency pulling effect between the magnetron and a low-Q cavity has been shown to enhance the frequency locking bandwidth compared to the injection phase-lock alone. The principle has been studied by the equivalent circuit simulation, analytical model, and finally confirmed experimentally on the magnetrons. Due to the pandemic delay in 2020, the equivalent high power tests using a 75kW, 915MHz industrial magnetron will be done in 2021 and will be reported in a future paper.

Wang, H.↗

Spectroscopic Measurements and Models of Energy Deposition in the Substrate of Quantum Circuits by Natural Ionizing Radiation

Naturally occurring background radiation is a potential source of correlated decoherence events in superconducting qubits that will challenge error-correction schemes. In order to characterize the radiation environment in an unshielded laboratory representative of superconducting qubits’ environments, we performed broadband, spectroscopic measurements of background radiation events inside a millikelvin refrigerator. The spectrometer was designed to mimic the size and composition of a quantum circuit. Specifically, we measured the background radiation spectra in silicon substrates of two thicknesses, 500 and 1500 µm, and one area, 25 mm 2 . The observed spectra span energies from a few kilo-electron-volts up to nearly 10 MeV, are nearly featureless, and decrease in intensity by a factor of 40 000 between 100 keV and 3 MeV for the 500-µm substrate. We integrate the spectra to obtain the average event rates and deposited power levels. These quantities correspond to a rate of 0.023 events per second and a power of 4.9 keV s -1 , when counting events that deposit at least 40 keV for the 500-µm-thick substrate. We find that the cryogenic measurements are in good agreement with predictions based on simple measurements of the terrestrial gamma-ray flux outside the refrigerator, published models of cosmic-ray fluxes, a crude model of the cryostat, and radiation-transport simulations. This model requires no free parameters to predict the background radiation spectra in the silicon substrates. The agreement between measurements and predictions demonstrates that the model we present can be used to assess the relative contributions of terrestrial and cosmic-ray sources to background radiation interactions in silicon substrates of varying thickness. These spectroscopic measurements are performed with a novel combination of superconducting microresonators located on micromachined silicon islands that define the interaction volume with background radiation. The resonators transduce deposited energy to a readily detectable electrical signal. Microresonator readout closely resembles dispersive superconducting qubit readout, so similar devices—with or without micromachined islands—are suitable for integration with superconducting quantum circuits as detectors for background radiation events. For our specific laboratory conditions, we find that gamma-ray emissions from radioisotopes are responsible for the majority of events that deposit E < 1 ⁢Me⁢V. We present results demonstrating that the background radiation spectrum contains relevant contributions from cosmic-ray particles other than muons, particularly a tail of multi-mega-electron-volt events due to protons and neutrons. These observations suggest several paths to reducing the impact of background radiation on quantum circuits, supported by an empirically validated model for generating reliable predictions of radiation interactions with silicon substrates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Infidelity Associated with Eliminating the Bus Resonator

This summer project started out to quantify the error associated with an approximate model of a superconducting circuit, where two qubits are dispersively coupled through a bus resonator. Understanding this error helps us decide if the approximate model is sufficient for the purpose of optimal control. We find out that the error of the approximate model covers up a nontrivial problem of the underlying circuit, which limits the fidelity of two-qubit gates under 99% for practical parameters. This suggests that high fidelity gates of this circuit cannot be achieved through optimal control alone, and changes of the parameters/design of the circuits appear necessary. Additionally, to carry out the algebra involved, a symbolic commutator algebra package HamMaker is developed in Julia. The package is capable of automating some difficult algebra in optimal control that previously had to be performed by hand. Within this work, HamMaker has been used to derived some simple but nontrivial corrections to the existing effective Hamiltonian.

74 ATOMIC AND MOLECULAR PHYSICS↗

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗

Improving Distribution System Operations Using Fleet Control of Electrolyzers

The proliferation of electrolyzers presents an opportunity for grid operators. Fast response times and the use of hydrogen as storage can be leveraged in a symbiotic way to support increasing penetration levels of photovoltaics (PV) in the distribution grid. This work presents the grid integration of an electrolyzer fleet and its control applications to minimize the impact of increasing solar PV penetration in the distribution network. The study involves a feeder model of a real utility circuit from a utility partner with an operational model of a fleet of electrolyzers. The operational improvements are quantified with performance metrics. The metrics show that the fleet control application of the electrolyzers can aid in reducing overvoltages, voltage fluctuations, and control device operations induced by intermittent solar generation. The locational dependence of electrolyzers are also discussed in terms of performance metrics.

39 EE - Hydrogen and Fuel Cell Technologies (EE-3F↗

Parameterization of generic positive sequence models to represent behavior of inverter based resources in low short circuit scenarios

The connection of large inverter based resources (IBR) in transmission systems is often located geographically and electrically far away from load centers. This, coupled with the displacement of synchronous machine plants, results in a reduction of the network short circuit strength at the point of connection. Under these conditions, state-of-the-art positive sequence simulation platforms and models can have difficulties maintaining numerical stability and/or providing an accurate representation of IBR plant dynamic behavior. As a result, computationally heavy time domain electromagnetic transient (EMT) simulations may be required to evaluate these systems. In this paper, a recently developed improved generic positive sequence model is parameterized to provide a representation of IBR behavior in low short circuit networks. Further, comparisons against generic and detailed EMT models demonstrate the suitability of the improved positive sequence model to study practical stability issues experienced with presently in-service plants. Such a model can provide some of the accuracy of an EMT representation with a much lower computational burden. The performance of the positive sequence model is validated against the behavior shown by both open white box and closed black box EMT domain models from around the world.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Short-depth QAOA circuits and quantum annealing on higher-order ising models

Abstract We present a direct comparison between QAOA (Quantum Alternating Operator Ansatz), and QA (Quantum Annealing) on 127 qubit problem instances. QAOA with p = 1, 2 rounds is executed on the 127 qubit heavy-hex graph gate-model quantum computer ibm_washington, using on-device grid-searches for angle finding, and QA is executed on two Pegasus-chip D-Wave quantum annealers. The problems are random Ising models whose connectivity matches heavy-hex graphs and the Pegasus graph connectivity, and optionally include hardware-compatible cubic terms ( Z Z Z terms). The QAOA circuits are heavily optimized and of extremely short depth, with a CNOT depth of 6 per round, which allows whole chip usage of the heavy-hex lattice. QAOA and QA are both compared against simulated annealing and the optimal solutions are computed exactly using CPLEX. The noiseless mean QAOA expectation values for p = 1, 2 are computed using classical light-cone based simulations. We find QA outperforms QAOA on the evaluated devices.

127 qubits↗

Scalable Circuits for Preparing Ground States on Digital Quantum Computers: The Schwinger Model Vacuum on 100 Qubits

The vacuum of the lattice Schwinger model is prepared on up to 100 qubits of IBM’s Eagle-processor quantum computers. A new algorithm to prepare the ground state of a gapped translationally invariant system on a quantum computer is presented, which we call “scalable circuits ADAPT-VQE” (SC-ADAPT-VQE). This algorithm uses the exponential decay of correlations between distant regions of the ground state, together with ADAPT-VQE, to construct quantum circuits for state preparation that can be scaled to arbitrarily large systems. These scalable circuits can be determined with use of classical computers, avoiding the challenging task of optimizing parameterized circuits on a quantum computer. SC-ADAPT-VQE is applied to the Schwinger model, and is shown to be systematically improvable, with an accuracy that converges exponentially with circuit depth. Both the structure of the circuits and the deviations of prepared wave functions are found to become independent of the number of spatial sites, L . This allows a controlled extrapolation of the circuits, determined with use of small or modest-sized systems, to arbitrarily large L . The circuits for the Schwinger model are determined on lattices up to L = 14 (28 qubits) with the Qiskit classical simulator, and are subsequently scaled up to prepare the L = 50 (100 qubits) vacuum on IBM’s 127-superconducting-qubit quantum computers ibm_brisbane and ibm_cusco. After introduction of an improved error-mitigation technique, which we call “operator decoherence renormalization”, the chiral condensate and charge-charge correlators obtained from the quantum computers are found to be in good agreement with classical matrix product state simulations. Published by the American Physical Society 2024

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Predictive Inverse Model for Advective Heat Transfer in a Short–Circuited Fracture: Dimensional Analysis, Machine Learning, and Field Demonstration

Identifying fluid flow maldistribution in planar geometries is a well–established problem in subsurface science/engineering. Of particular importance to the thermal performance of enhanced (or “engineered”) geothermal systems is identifying the existence of nonuniform (i.e., heterogeneous) permeability and subsequently predicting advective heat transfer. Here, machine learning via a genetic algorithm (GA) identifies the spatial distribution of an unknown permeability field in a two–dimensional Hele–Shaw geometry (i.e., parallel plates). The inverse problem is solved by minimizing the L2 norm between simulated residence time distribution (RTD) and measurements of an inert tracer breakthrough curve (BTC) (C–Dot nanoparticle). Principal component analysis (PCA) of spatially correlated permeability fields enabled reduction of the parameter space by more than a factor of 10 and restricted the inverse search to reservoir–scale permeability variations. Thermal experiments and tracer tests conducted at the mesoscale Altona Field Laboratory (AFL) demonstrate that the method accurately predicts the effects of extreme flow channeling on heat transfer in a single bedding–plane rock fracture. However, this is only true when the permeability distributions provide adequate matches to both tracer RTD and frictional pressure loss. Without good agreement to frictional pressure loss, it is still possible to match a simulated RTD to measurements, but subsequent predictions of heat transfer are grossly inaccurate. Here, the results of this study suggest that it is possible to anticipate the thermal effects of flow maldistribution, but only if both simulated RTDs and frictional pressure loss between fluid inlets and outlets are in good agreement with measurements.

42 ENGINEERING↗