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DOE OSTI2023

Crystal structure of the Arabidopsis SPIRAL2 C-terminal domain reveals a p80-Katanin-like domain

Epidermal cells of dark-grown plant seedlings reorient their cortical microtubule arrays in response to blue light from a net lateral orientation to a net longitudinal orientation with respect to the long axis of cells. The molecular mechanism underlying this microtubule array reorientation involves katanin, a microtubule severing enzyme, and a plant-specific microtubule associated protein called SPIRAL2. Katanin preferentially severs longitudinal microtubules, generating seeds that amplify the longitudinal array. Upon severing, SPIRAL2 binds nascent microtubule minus ends and limits their dynamics, thereby stabilizing the longitudinal array while the lateral array undergoes net depolymerization. To date, no experimental structural information is available for SPIRAL2 to help inform its mechanism. To gain insight into SPIRAL2 structure and function, we determined a 1.8 Å resolution crystal structure of the Arabidopsis thaliana SPIRAL2 C-terminal domain. The domain is composed of seven core α-helices, arranged in an α-solenoid. Amino-acid sequence conservation maps primarily to one face of the domain involving helices α1, α3, α5, and an extended loop, the α6-α7 loop. The domain fold is similar to, yet structurally distinct from the C-terminal domain of Ge-1 (an mRNA decapping complex factor involved in P-body localization) and, surprisingly, the C-terminal domain of the katanin p80 regulatory subunit. The katanin p80 C-terminal domain heterodimerizes with the MIT domain of the katanin p60 catalytic subunit, and in metazoans, binds the microtubule minus-end factors CAMSAP3 and ASPM. Structural analysis predicts that SPIRAL2 does not engage katanin p60 in a mode homologous to katanin p80. The SPIRAL2 structure highlights an interesting evolutionary convergence of domain architecture and microtubule minus-end localization between SPIRAL2 and katanin complexes, and establishes a foundation upon which structure-function analysis can be conducted to elucidate the role of this domain in the regulation of plant microtubule arrays.

59 BASIC BIOLOGICAL SCIENCES↗

NASA NTRS1988

Imaging Of Directional-Solidification Interfaces

X-ray and gamma-ray technique developed at NASA Langley Research Center enables melt/solid interface to be observed visually during crystal growth by directional solidification in Bridgman furnace. Technique used to observe movement and shape of interface in germanium and in lead tin telluride. Valuable tool in efforts to grow seeded semiconductor materials in Bridgman furnaces.

Fripp, Archibald L., Jr.↗

NASA NTRS1988

A review of melt and vapor growth techniques for polydiacetylene thin films for nonlinear optical applications

Methods for the growth of polydiacetylene thin films by melt and vapor growth and their subsequent polymerization are summarized. Films with random orientations were obtained when glass or quartz were used as substrates in the vapor growth process. Oriented polydiacetylene films were fabricated by the vapor deposition of diacetylene monomer onto oriented polydiacetylene on a glass substrate and its subsequent polymerization by UV light. A method for the growth of oriented thin films by a melt-shear growth process as well as a method of film growth by seeded recrstallization from the melt between glass plates, that may be applied to the growth of polydiacetylene films, are described. Moreover, a method is presented for the fabrication of single crystal thin films of polyacetylenes by irradiation of the surface of diacetylene single crystals to a depth between 100 and 2000 angstroms.

Penn, B. G.↗

DOE OSTI2023

The impact of feedstock size and composition on the hydrothermal growth of (U,Th)O 2

Bulk crystal growth of refractory oxides requires unique approaches, and the U x Th 1-x O 2 solid solution is no exception. Hydrothermal transport reactions of U 0.1 Th 0.9 O 2 onto ThO 2 seeds with feedstocks comprised of U 0.1 Th 0.9 O 2 or mixtures of UO 2 and ThO 2 with a nominal composition of U 0.1 Th 0.9 O 2 are investigated with µ-Raman spectroscopy and X-ray fluorescence. In each case, the trends in stoichiometry as a function of distance from the seed are analyzed and the deviations from the nominal stoichiometry discussed. When the feedstock is composed of mixed oxides, the particle surface area’s influence on the feedstock dissolution rate is the dominant factor and can produce U-rich stoichiometries as high as U 0.75 Th 0.25 O 2 . When composed solely of U 0.1 Th 0.9 O 2 , the total growth amount depends on the particle size, but the obtained stoichiometry is the product of differing solubilities. Although the U0.1Th0.9O 2 feedstock produces the most homogeneous growth, the ending growth of the smallest particle UO 2 /ThO 2 mixture yields the stoichiometry closest to U 0.1 Th 0.9 O 2 . How to obtain desired stoichiometries from mixtures by matching the particle size and solubilities is briefly discussed.

36 MATERIALS SCIENCE↗

NASA NTRS1998

Experiment 13: The Study of Dopant Segregation Behavior During the Growth of GaAs in Microgravity on USML-2

An investigation into the segregation behavior of selenium doped gallium arsenide (Se/GaAs) during directional solidification in the microgravity environment was conducted using the Crystal Growth Furnace (CGF) aboard the second United States Microgravity Laboratory (USML-2). Two crystals were successfully processed on USML-2, which lasted from October 20 to November 7, 1995. The first sample was processed for 67 hours, 45 minutes (MET 5/04:53:45-8/00:23:50) and included 19 hours of growth at 0.5 microns/sec which yielded 3.42 cm of sample length, and 5 hours of growth at 1.5 microns/sec which yielded 2.7 cm of sample. During the second experiment, the furnace temperature was adjusted to move the melt-solid interface position towards the hot end of the furnace. The second sample was processed for 50 hours, 10 minutes (MET 8/18:48:49-10/21:58:54) and included 11 hours of growth at 0.5 microns/sec which yielded 1.98 cm of sample, and 1 hour, 25 minutes of growth at 5.0 microns/sec which yielded 2.6 cm of sample. This sample provides an order of magnitude change in growth rate and reproduces one of the growth rates used during USML-1. In contrast to the results from USML-1, no voids were present in either crystal grown on USML-2. The absence of voids in either sample indicates that growth rate changes alone were not responsible for the formation of voids found in the crystals grown on USML-1. Sections of the ground-based and flight crystals grown on USML-2 were cut and polished. All of the interface demarcation lines expected from the current pulse interface demarcation (CPID) system have been identified. These measurements have been analyzed for interface positions, interface shapes, and growth rates. Using a newly developed technique, based on experimental and numerical results, the seeding interface reproducibility from run to run was <= 2.5 mm. The seeding interface position could be controllably moved, with respect to the furnace zones, by adjusting the control set points of the heating zones. The interface shapes flattened slightly as the interface position moved closer to the hot zone but was always an unfavorable concave into the solid shape. The growth rate was found to equal the furnace translation rate, after a 2 -hour transient, for growth rates <= 1.0 microns/sec. Segregation measurements for the ground-based crystals are indicative of complete mixing behavior, as expected. Segregation measurements of the flight crystals are still in progress.

Matthiesen, David H.↗

DOE OSTI2021

Templated Growth and Passivation of Vertically Oriented Antimony Selenide Thin Films for High-Efficiency Solar Cells in Substrate Configuration

Antimony selenide (Sb 2 Se 3 ) is a promising low-cost photovoltaic material with a 1D crystal structure. The grain orientation and defect passivation play a critical role in determining the performance of polycrystalline Sb 2 Se 3 thin-film solar cells. In this work, a seed layer is introduced on a molybdenum (Mo) substrate to template the growth of a vertically oriented, columnar Sb 2 Se 3 absorber layer by closed space sublimation. By controlling the grain orientation and compactness of the Sb 2 Se 3 seeds, obtain high-quality Sb 2 Se 3 absorber layers with passive Sb 2 Se 3 /Mo interfaces is obtained, which in turn improve the transport of photoexcited charge carriers through the absorber layer and its interfaces. Post-deposition annealing of absorber layers in ambient air is further utilized to passivate the defects in Sb 2 Se 3 and enhance the quality of the front heterojunction. As a result of systematic processing optimization, Sb 2 Se 3 planar heterojunction solar cells are fabricated in substrate configuration with a champion power conversion efficiency of 8.5%.

14 SOLAR ENERGY↗

NASA NTRS1984

Proposed Technique of Crystal-Ribbon Growth

Technique for silicon crystal-ribbon growth from crucible, two inert wettable filaments dipped into silicon melt to guide growth of silicon sheet. Filaments clamped in place and tilted slightly away from each other and seed ribbon lowered into contact with melt to establish menisci between filaments.

Thornhill, J. W.↗

NASA NTRS1990

Method of forming three-dimensional semiconductor structures

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of three-dimensional, exemplary electronic devices are disclosed.

Fathauer, Robert W.↗

NASA NTRS1993

Measurements and computational analysis of heat transfer and flow in a simulated turbine blade internal cooling passage

Visual and quantitative information was obtained on heat transfer and flow in a branched-duct test section that had several significant features of an internal cooling passage of a turbine blade. The objective of this study was to generate a set of experimental data that could be used to validate computer codes for internal cooling systems. Surface heat transfer coefficients and entrance flow conditions were measured at entrance Reynolds numbers of 45,000, 335,000, and 726,000. The heat transfer data were obtained using an Inconel heater sheet attached to the surface and coated with liquid crystals. Visual and quantitative flow field results using particle image velocimetry were also obtained for a plane at mid channel height for a Reynolds number of 45,000. The flow was seeded with polystyrene particles and illuminated by a laser light sheet. Computational results were determined for the same configurations and at matching Reynolds numbers; these surface heat transfer coefficients and flow velocities were computed with a commercially available code. The experimental and computational results were compared. Although some general trends did agree, there were inconsistencies in the temperature patterns as well as in the numerical results. These inconsistencies strongly suggest the need for further computational studies on complicated geometries such as the one studied.

Russell, Louis M.↗

NASA NTRS1993

Measurements and computational analysis of heat transfer and flow in a simulated turbine blade internal cooling passage

Russell, Louis M.↗

NASA NTRS2002

Method of Forming Three-Dimensional Semiconductors Structures

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of 3-dimensional, exemplary electronic devices are disclosed.

Fathauer, Robert W.↗

NASA NTRS1982

Liquid encapsulated Czochralski growth of low dislocation GaAs

The availability of high-quality, large-diameter GaAs substrates is key to the successful development and production of high-speed GaAs devices and high-efficiency GaAs solar cells. The liquid encapsulated Czochralski (LEC) technique has provided a means for producing large-diameter GaAs. Progress in improving the LEC growth process which has resulted in 3-inch GaAs crystals with exceptionally low dislocation densities and reduced propensity for twinning is reported. Undoped, semi-insulating GaAs ingots were grown in a Melbourn high-pressure LEC system. The effects of seed perfection, seed necking, cone angle, melt stoichiometry, ambient pressure, thickness of the B2O3 encapsulating layer, and diameter control on the dislocation density were investigated. The material was characterized by preferential etching and X-ray topography. It is shown that 3-inch diameter substrates can be produced with dislocation densities as low as 6000 per sq cm through proper selection and control of growth parameters. Also, the incidence of twinning can be reduced significantly by growing from slightly As-rich melts.

Kirkpatrick, C. G.↗

NASA NTRS1998

Measurements of Heat Transfer, Flow, and Pressures in a Simulated Turbine Blade Internal Cooling Passage

An experimental study was made to obtain quantitative information on heat transfer, flow, and pressure distribution in a branched duct test section that had several significant features of an internal cooling passage of a turbine blade. The objective of this study was to generate a set of experimental data that could be used for validation of computer codes that would be used to model internal cooling. Surface heat transfer coefficients and entrance flow conditions were measured at nominal entrance Reynolds numbers of 45,000, 335,000, and 726,000. Heat transfer data were obtained by using a steady-state technique in which an Inconel heater sheet is attached to the surface and coated with liquid crystals. Visual and quantitative flow-field data from particle image velocimetry measurements for a plane at midchannel height for a Reynolds number of 45,000 were also obtained. The flow was seeded with polystyrene particles and illuminated by a laser light sheet. Pressure distribution measurements were made both on the surface with discrete holes and in the flow field with a total pressure probe. The flow-field measurements yielded flow-field velocities at selected locations. A relatively new method, pressure sensitive paint, was also used to measure surface pressure distribution. The pressure paint data obtained at Reynolds numbers of 335,000 and 726,000 compared well with the more standard method of measuring pressures by using discrete holes.

Russell, Louis M.↗

DOE OSTI2022

Communication—Electrodeposition of Indium Directly on Silicon

Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic seed layer. Eliminating this layer poses benefits in microelectronics by reducing resistive interfaces and in vapor-liquid-solid conversion to III-V material by allowing direct contact to the single-crystal silicon substrate for epitaxial conversion. We investigated conditions to directly electrodeposit indium onto n-type Si(100). We illustrate that a two-step galvanostatic plating at low temperatures can consistently produce smooth, continuous films of indium over large areas, in bump morphologies, and conformally into inverted pyramids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1994

Development of lasers optimized for pumping Ti:Al2O3 lasers

Laboratory demonstrations that were completed included: (1) an all-solid-state, broadly tunable, single-frequency, Ti:Al2O3 master oscillator, and (2) a technique for obtaining 'long' (nominally 100- to 200-ns FWHM) laser pulses from a Q-switched, Nd oscillator at energy levels commensurate with straightforward amplification to the joule level. A diode-laser-pumped, Nd:YLF laser with intracavity SHG was designed, constructed, and evaluated. With this laser greater than 0.9 W of CW, output power at 523.5 nm with 10 W of diode-laser pump power delivered to the Nd:YLF crystal was obtained. With this laser as a pump source, for the first time, to our knowledge, an all solid-state, single frequency, Ti:Al203 laser with sufficient output power to injection seed a high-energy oscillator over a 20-nm bandwidth was demonstrated. The pulsed laser work succeeded in demonstrating pulse-stretching in a Q-switched Nd:YAG oscillator. Pulse energies greater than 50-mJ were obtained in pulses with 100- to 200-ns pulsewidths (FWHM).

Rines, Glen A.↗

NASA NTRS2005

A Further Investigation of the Exceptional Zircon Aggregate in Lunar Thin Section 73235,82

Introduction: Smith et al. described an exceptional zircon assemblage in thin section 82 from lunar breccia 73235 which, in transmitted light, resembles a cluster of pomegranate seeds, situated in a clast dominated by bytownite (Fig.1). They reported that high-contrast back-scattered electron (BSE) images of the zircon assemblage clearly show an overgrowth around most of the crystals. Most significantly these authors reported that the age of the rims of ca 4.18Ga is 120 million years younger than age of the interiors, dated at ca 4.31Ga. Smith et al. concluded that ca 4.31 billion years ago a relatively large (500+micron) zircon crystallized within a clast of Ca rich plagioclase. The zircon was fractured into numerous smaller crystals and was subsequently overgrown by a second generation of zircon at approximately 4.18Ga.

Pidgeon, R. T.↗

DOE OSTI2021

Enhanced Selectivity and Stability of Finned Ferrierite Catalysts in Butene Isomerization

Abstract Designing zeolite catalysts with improved mass transport properties is crucial for restrictive networks of either one‐ or two‐dimensional pore topologies. Here, we demonstrate the synthesis of finned ferrierite (FER), a commercial zeolite with two‐dimensional pores, where protrusions on crystal surfaces behave as pseudo nanoparticles. Catalytic tests of 1‐butene isomerization reveal a 3‐fold enhancement of catalyst lifetime and an increase of 12 % selectivity to isobutene for finned samples compared to corresponding seeds. Electron tomography was used to confirm the identical crystallographic registry of fins and seeds. Time‐resolved titration of Brønsted acid sites confirmed the improved mass transport properties of finned ferrierite compared to conventional analogues. These findings highlight the advantages of introducing fins through facile and tunable post‐synthesis modification to impart material properties that are otherwise unattainable by conventional synthesis methods.

Dai, Heng↗

NASA NTRS1995

Research support for cadmium telluride crystal growth

The growth of single crystals of zinc selenide was carried out by both closed ampoule physical vapor transport and effusive ampoule physical vapor transport (EAPVT). The latter technique was shown to be a much more efficient method for the seeded growth of zinc selenide, resulting in higher transport rates. Furthermore, EAPVT work on CdTe has shown that growth onto (n 11) seeds is advantageous for obtaining reduced twinning and defect densities in II-VI sphalerite materials.

Rosenberger, Franz↗