Search NASA⌕ Search

SEARCH · Search NASA

Results for “doping effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Effect of Mg doping on carrier recombination in GaN

Time-resolved photoluminescence measurements have been performed on Mg-doped GaN for Mg concentrations in the low- to mid-10 19 cm -3 . As-grown and annealed (600–675 °C) samples were studied. In the as-grown samples, the nonradiative carrier lifetime was found to be about 200 ps and nearly independent of the Mg concentration. Upon annealing, the carrier lifetimes shorten to ~150 ps but, again, show little dependence on the annealing temperature. The analysis of possible Shockley–Read–Hall recombination centers and their behavior during doping and annealing suggests that the main nonradiative recombination center is the Mg–nitrogen vacancy complex. The weak dependence of the PL decay times on temperature indicates that carrier capture into this center has a very low potential barrier, and the nonradiative recombination dominates even at low temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effect of Mn doping and charge transfer on LaTi 1- x Mn x O 3

Here, we report the magnetic and electronic transport properties of Mn-doped LaTi 1-x Mn x O 3 (x= 0, 0.1, 0.3, 0.5) as a function of temperature and an applied magnetic field. It was found that the Mn-doped samples show a magnetic transition which is not present in the parent LaTiO 3 . The Mn-doped samples showed fluctuations in magnetization at low fields below their Néel transition temperature indicating electronic phase separation in the material. Increased Mn content in the sample strengthens the ferromagnetic-like moment while maintaining G-type antiferromagnetic phase by charge transfer from Mn to Ti and influencing orbital ordering of the Ti 3+ t 2g orbitals. The results are discussed in parallel with transport and bulk magnetization measurements detailing the electronic behavior. An additional context for the mechanism is supported by first-principles density-function theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of Ni doping on vortex pinning in CaK ( F e 1 - x N i x ) 4 A s 4 single crystals

We study the correlation between chemical composition and vortex dynamics in Ni-doped CaK(Fe 1–x Ni x ) 4 As 4 (x = 0, 0.015, 0.025, 0.03, and 0.05) single crystals by performing measurements of the critical current densities J c and the flux creep rates S . The magnetic relaxation of all the crystals is well described by the collective creep theory. The samples display a glassy exponent μ within the predictions for vortex bundles in a weak pinning scenario and relatively small characteristic pinning energy ( U 0 < 100K). The undoped crystals display modest J c values at low temperatures and high magnetic fields applied along the c axis. J c ( T ) dependences at high fields display an unusual peak. The enhancement in J c ( T ) matches with an increase in U 0 and the appearance of a second peak in the magnetization. As Ni doping increases, whereas there is a monotonic decrease in T c there is a nonmonotonic change in J c . Initially J c increases, reaching a maximum value for x = 0.015, and then J c decreases for x ≥ 0.025. This change in J c ( x ) is coincident with the onset of antiferromagnetic order. The magnetic field dependence of J c ( H ) also manifests a change in behavior between these x values. The analysis of the vortex dynamics for small and intermediate magnetic fields shows a gradual evolution in the glassy exponent μ with Ni content, x . As a result, this implies that there is no appreciable change in the mechanism that determines the vortex relaxation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Evaluating the Effects of Nitrogen Doping and Oxygen Doping on SRF Cavity Performance

Superconducting radiofrequency (SRF) cavities are resonators with extremely low surface resistance that enable accelerating cavities to have extremely high quality factors (Q₀). High Q₀ decreases the capital required to keep the accelerators cold by reducing power loss. The performance of SRF cavities is largely governed by the surface composition of the first §I{100}{nm} of the cavity surface. Impurities such as oxygen and nitrogen have been observed to yield high Q₀, but their precise roles are still being studied. Here, we compare the performance of cavities doped with nitrogen and oxygen in terms of surface composition and heating behavior with field. A simulation of the diffusion of oxygen into the bulk of the cavity was built using COMSOL Multiphysics software. Simulated results were compared to the actual surface composition of the cavities as determined from secondary ion mass spectrometry analysis. Understanding how these impurities affects performance allows us to have further insight into the underlying mechanisms that enable these surface treatments to yield high Q₀.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Examining the Effects of Oxygen Doping on SRF Cavity Performance

Superconducting radiofrequency (SRF) cavities are resonators with extremely low surface resistance that enable accelerating cavities to have extremely high quality factors (Q₀). High (Q₀) decreases the capital required to keep accelerators cold by reducing power loss. The performance of SRF cavities is largely governed by the surface composition of the first 100 nm of the cavity surface. Impurities such as oxygen and nitrogen have been observed to yield high Q₀, but their precise roles are still being studied. Here, we compare the performance of cavities doped with nitrogen and oxygen in terms of fundamental material properties to understand how these impurities affect performance. This enables us to have further insight into the underlying mechanisms that enable these surface treatments to yield high Q₀ performance.

43 PARTICLE ACCELERATORS↗
NASA NTRS1971

Some major results of the Fourth Annual Conference on Effects of Lithium Doping on Silicon Solar Cells

Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.

Berman, P. A.↗
NASA NTRS1975

Effect of impurity doping concentration on solar cell output

Experimental measurements were made of solar cell and related photovoltaic parameters for silicon with high concentrations of dopant impurities. The cell output peaked for doping levels around 10 to the 17th power per cu cm. Independent measurements of diffusion length and open circuit voltage at high doping levels showed severe reductions at concentrations above 10 to the 18th power per cu cm. Theoretical reasons are given to explain these reductions. Indication is given of the problems requiring solution before increased cell output can be achieved at high doping levels.

Iles, P. A.↗
NASA NTRS1986

Determination of carrier saturation velocity in high-performance In(y)Ga(1-y)As/Al(x)Ga(1-x)As modulation-doped field-effect transistors (with y between 0 and 0.2)

The relation between the intrinsic transconductance per unit gate width and the carrier saturation velocity, v(sat), is used to determine v(sat) for several high-performance pseudomorphic MODFET's with different InAs mole fractions (y). Measurements of In(y)Ga(1-y)As/AlGaAs MODFET's grown by MBE were found to give accurate v(sat) values at 77 K. Devices with y between 0 and 0.20 were shown to have higher v(sat) than conventional GaAs/AlGaAs MODFET's. An optimum y value for peak v(sat), which may optimize overall device performance, is expected.

Henderson, T. S.↗
NASA NTRS1986

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

Ketterson, Andrew A.↗
NASA NTRS1990

Low-temperature microwave characteristics of pseudomorphic In(x)Ga(1-x) As/In(0.52)Al(0.48)As modulation-doped field-effect transistors

Low-temperature microwave measurements of both lattice-matched and pseudomorphic In(x)Ga(1-x)As/In(0.48)As (x = 0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the In(x)Ga(1-x)As/In(0.52)Al(0.48)As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31 percent increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.

Lai, R.↗