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At least 253 records · Page 14

Non-equilibrium states and interactions in the topological insulator and topological crystalline insulator phases of NaCd4As3

Topological materials are of great interest because they can support metallic edge or surface states that are robust against perturbations, with the potential for technological applications. Here, we experimentally explore the light-induced non-equilibrium properties of two distinct topological phases in NaCd4As3: a topological crystalline insulator (TCI) phase and a topological insulator (TI) phase. This material has surface states that are protected by mirror symmetry in the TCI phase at room temperature, while it undergoes a structural phase transition to a TI phase below 200 K. After exciting the TI phase by an ultrafast laser pulse, we observe a leading band edge shift of >150 meV that slowly builds up and reaches a maximum after ∼0.6 ps and that persists for ∼8 ps. The slow rise time of the excited electron population and electron temperature suggests that the electronic and structural orders are strongly coupled in this TI phase. It also suggests that the directly excited electronic states and the probed electronic states are weakly coupled. Both couplings are likely due to a partial relaxation of the lattice distortion, which is known to be associated with the TI phase. In contrast, no distinct excited state is observed in the TCI phase immediately or after photoexcitation, which we attribute to the low density of states and phase space available near the Fermi level. Our results show how ultrafast laser excitation can reveal the distinct excited states and interactions in phase-rich topological materials.

Angle-resolved photoemission spectroscopy↗

Band-edge Engineering to Eliminate Radiation-Induced Defect States in Perovskite Scintillators

Under radiative environments such as extended hard X- or γ-rays, degradation of scintillation performance is often due to irradiation-induced defects. To overcome the effect of deleterious defects, novel design mitigation strategies are needed to identify and design more resilient materials. The potential for band-edge engineering to eliminate the effect of radiation-induced defect states in rare-earth-doped perovskite scintillators is explored, taking Ce 3+ -doped LuAlO 3 as a model material system, using density functional theory (DFT)-based DFT + U and hybrid Heyd–Scuseria–Ernzerhof (HSE) calculations. Furthermore, from spin-polarized hybrid HSE calculations, the Ce 3+ activator ground-state 4f position is determined to be 2.81 eV above the valence band maximum in LuAlO 3 . Except for the oxygen vacancies which have a deep level inside the band gap, all other radiation-induced defects in LuAlO 3 have shallow defect states or are outside the band gap, that is, relatively far away from either the 5d 1 or the 4f Ce 3+ levels. Finally, we examine the role of Ga doping at the Al site and found that LuGaO 3 has a band gap that is more than 2 eV smaller than that of LuAlO 3 . Specifically, the lowered conduction band edge envelopes the defect gap states, eliminating their potential impact on scintillation performance and providing direct theoretical evidence for how band-edge engineering could be applied to rare-earth-doped perovskite scintillators.

36 MATERIALS SCIENCE↗

Probing transport energies and defect states in organic semiconductors using energy resolved electrochemical impedance spectroscopy

Abstract Determining the relative energies of transport states in organic semiconductors is critical to understanding the properties of electronic devices and in designing device stacks. Futhermore, defect states are also highly important and can greatly impact material properties and device performance. Recently, energy‐resolved electrochemical impedance spectroscopy (ER‐EIS) is developed to probe both the ionization energy (IE) and electron affinity (EA) as well as sub‐bandgap defect states in organic semiconductors. Herein, ER‐EIS is compared to cyclic voltammetry (CV) and photoemission spectroscopies for extracting IE and EA values, and to photothermal deflection spectroscopy (PDS) for probing defect states in both polymer and molecular organic semiconductors. The results show that ER‐EIS determined IE and EA are in better agreement with photoemission spectroscopy measurements as compared to CV for both polymer and molecular materials. Furthermore, the defect states detected by ER‐EIS agree with sub‐bandgap features detected by PDS. Surprisingly, ER‐EIS measurements of regiorandom and regioregular poly(3‐hexylthiophene) (P3HT) show clear defect bands that occur at significantly different energies. In regioregular P3HT the defect band is near the edge of the occupied states while it is near the edge of the unoccupied states in regiorandom P3HT.

14 SOLAR ENERGY↗

Partial equilibration of anti-Pfaffian edge modes at ν = 5 / 2

The thermal Hall conductance K of the fractional quantum Hall state at filling fraction ν = 5/2 has recently been measured to be K = 2.5π 2 $k$$^{2}_{B}$T/3h [M. Banerjee et al. Nature (London) 559, 205 (2018)]. Here, the half-integer value of this result (in units of π 2 $k$$^{2}_{B}$T/3h) provides strong evidence for the presence of a Majorana edge mode and a corresponding quantum Hall state hosting quasiparticles with non-Abelian statistics. Whether this measurement points to the realization of the PH-Pfaffian or the anti-Pfaffian state has been the subject of debate. Here we consider the implications of this measurement for anti-Pfaffian edge-state transport. We show that in the limit of strong Coulomb interaction and an approximate spin degeneracy in the lowest Landau level, the anti-Pfaffian state admits low-temperature edge phases that are consistent with the Hall conductance measurements. Furthermore, these edge phases can exhibit fully equilibrated electrical transport coexisting with partially equilibrated heat transport over a range of temperatures. Through a study of the kinetic equations describing low-temperature electrical and heat transport of these edge states, we determine regimes of parameter space, controlling the interactions between the different edge modes that agree with experiment.

36 MATERIALS SCIENCE↗

Edge-localized-mode simulation in CFETR steady-state scenario

We report the EPED1 model and self-consistent core-pedestal coupling in integrated modeling are used to design the pedestal structure of the China Fusion Engineering Testing Reactor (CFETR) steady-state scenario. The key parameters, such as β p and q 95 , are based on the grassy edge-localized-mode (ELM) experimental database. In this work, we use the BOUT++ six-field two-fluid code to simulate the onset of the ELM in the CFETR steady-state scenario. The ELM size is around 0.2% in nonlinear simulations, which is in the experimental range of the grassy ELM discharges, 0.1%–1% observed in multiple tokamak devices. Linear and nonlinear simulations show that the dominant high-n ballooning modes peak around n = 40. Compared to type-I ELM crashing dynamics, grassy ELM crashing has a smaller initial crash and is then followed by three phases of turbulence spreading, which are dominated by multi-modes, a high-n mode of n = 45 and low-n mode of n = 5, respectively. In contras to type-I ELM, the perturbation of the high-n mode has a narrow width around ψ = 0.95, and magnetic island formation and reconnection occur only beyond ψ = 0.95, leading to a small initial crash. Mode–mode interaction in the multi-mode coexistence stage stops the growth of individual modes and reduces the transport of particles and heat, and these are the two reasons why the ELM size is small. In–out asymmetry of transient heat flux with a ratio of E out /E in = 3.5 is found during grassy ELM crash. The rise and delay times of the heat flux match the calculation from the free-streaming model. To evaluate the erosion of the divertor target, the energy fluence at the outer divertor target is calculated, which is 0.029 MJ m -2 , 5.5 times smaller than the tungsten melting limit 0.16 MJ m -2 . The calculated energy fluency still follows the experimental scaling law from type-I ELM experiments. The fluctuation eddies in the toroidal direction show a filament structure at the outer mid-plane. Parallel heat flux patterns with a toroidal mode number n = 10 are found at the outer divertor with an amplitude of 680 MW m -2 .

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Phase separation, edge currents, and Hall effect for active matter with Magnus dynamics

Here we examine run-and-tumble disks in two-dimensional systems where the particles also have a Magnus component to their dynamics. For increased activity, we find that the system forms a motility-induced phase-separated (MIPS) state with chiral edge flow around the clusters, where the direction of the current is correlated with the sign of the Magnus term. The stability of the MIPS state is non-monotonic as a function of increasing Magnus term amplitude, with the MIPS region first extending down to lower activities followed by a break up of MIPS at large Magnus amplitudes into a gel-like state. We examine the dynamics in the presence of quenched disorder and a uniform drive and find that the bulk flow exhibits a drive-dependent Hall angle. This is a result of the side jump effect produced by scattering from the pinning sites and is similar to the behavior found for skyrmions in chiral magnets with quenched disorder.

97 MATHEMATICS AND COMPUTING↗

Role of Local Conductivities in the Plasmon Reflections at the Edges and Stacking Domain Boundaries of Trilayer Graphene

Here, we employed infrared scattering-type scanning near-field optical microscopy (IR-sSNOM) to study surface plasmon polaritons (SPPs) in trilayer graphene (TLG). Our study reveals systematic differences in near-field IR spectra and SPP wavelengths between Bernal (ABA) and rhombohedral (ABC) TLG domains on SiO 2 , which can be explained by stacking-dependent intraband conductivities. We also observed that the SPP reflection profiles at ABA-ABC boundaries could be mostly accounted for by an idealized domain boundary defined by the conductivity discontinuity. However, we identified distinct shapes in the SPP profiles at the edges of the ABA and ABC TLG, which cannot be solely attributed to idealized edges with stacking-dependent conductivities. Instead, this can be explained by the presence of various edge structures with local conductivities differing from those of bulk TLGs. Our findings unveil a new structural element that can control SPP and provide insights into the structures and electronic states of the edges of few-layer graphene.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Antiferromagnetism-driven two-dimensional topological nodal-point superconductivity

Magnet/superconductor hybrids (MSHs) hold the promise to host emergent topological superconducting phases. Both one-dimensional (1D) and two-dimensional (2D) magnetic systems in proximity to -wave superconductors have shown evidence of gapped topological superconductivity with zero-energy end states and chiral edge modes. Recently, it was proposed that the bulk transition-metal dichalcogenide 4Hb-TaS 2 is a gapless topological nodal-point superconductor (TNPSC). However, there has been no experimental realization of a TNPSC in a MSH system yet. Here we present the discovery of TNPSC in antiferromagnetic (AFM) monolayers on top of an s-wave superconductor. Our calculations show that the topological phase is driven by the AFM order, resulting in the emergence of a gapless time-reversal invariant topological superconducting state. Using low-temperature scanning tunneling microscopy we observe a low-energy edge mode, which separates the topological phase from the trivial one, at the boundaries of antiferromagnetic islands. As predicted by the calculations, we find that the relative spectral weight of the edge mode depends on the edge’s atomic configuration. Our results establish the combination of antiferromagnetism and superconductivity as a novel route to design 2D topological quantum phases.

30 DIRECT ENERGY CONVERSION↗

System and method to facilitate a search for a hybrid-manufacturing process plan

One embodiment of the present disclosure provides a system and method for facilitating a search for a hybrid-manufacturing process plan for manufacturing an object. During operation, the system can obtain a set of partial order constraints constraining the order in which a set of at least two manufacturing actions, corresponding to addition or removal of predefined regions of space, appear in a process plan. The system can constrain, based on the set of partial order constraints, a search space. The search space can correspond to a tree in which the nodes represent the object's state and the edges represent available actions at each node. The system can then determine a set of optimized process plans represented by orderings of the actions, corresponding to paths on the search tree, that produce the desired final state in a cost-effective manner.

Crawford, Lara S.↗

Probing Multiconfigurational States by Spectroscopy: The Cerium XAS L 3 ‐edge Puzzle

Abstract The Ce L 3 edge XAS spectra of CeO 2 and cerocene [Ce(C 8 H 8 ) 2 ] were calculated with relativistic ab‐initio multireference wavefunction approaches capable of reproducing the observed spectra accurately. The study aims to resolve the decades‐long puzzle regarding the relationship between the number and relative intensities of the XAS peaks and the 4f electron occupation in the ground state (GS) versus the core‐excited states (ESs). CeO 2 and cerocene exemplify the different roles of covalent bonding and wavefunction configurational composition in the observed intensity patterns. Good agreement is found between the calculated GS 4f‐shell occupations and the value derived from XAS measurements using peak areas ( n f ). The identity of the two‐peaked Ce L 3 edge is fully rationalized from the perspective of the relaxed wavefunctions for the GS and core ESs. The states underlying the different peaks differ from each other in a surprisingly simple way that can be associated with 4f 1 vs. 4f 0 sub‐configurations. Furthermore, part of one of the cerocene spectral peaks is associated with 4f 2 sub‐configurations. The pattern therefore reveals excited states that can be interpreted in terms of Ce IV and III oxidation numbers, as long assumed, with Ce II states additionally appearing in the cerocene spectrum. While this work demonstrates the rough accuracy of the conventional approach to determining n f from Ce L 3 ‐edge XAS, limitations are highlighted in terms of the ultimate accuracy of this approach and the potential of observing new types of excited states. The need to determine the sources of n f by calculations, is stressed.

Sergentu, Dumitru‐Claudiu↗

Partial fillings of the bosonic $E$ 8 quantum Hall state

Here, we study bosonic topological phases constructed from electrons. In addition to a bulk excitation energy gap, these bosonic phases also have a fermion energy gap, below which all local excitations in the bulk and on the edge are even combinations of electrons. We focus on chiral phases, in which all low-energy edge excitations move in the same direction, that arise from the short-range entangled $E_8$ quantum Hall state, the bosonic analog of the filled lowest Landau level of electrons. The $E_8$ edge-state theory features an $E_8$ Kac-Moody symmetry that can be decomposed into ${\cal G}_A \times {\cal G}_B$ subalgebras, such as $SU(3) \times E_6$, $SO(M) \times SO(16-M)$, and $G_2 \times F_4$. (Here, $\{SO(M) \}$, $\{SU(N)\}$, and $\{E_8, G_2, F_4 \}$ denote orthogonal, unitary, and exceptional Lie algebras.) Using these symmetry decompositions, we construct exactly solvable coupled-wire model Hamiltonians for families of long-range entangled ${\cal G}_A$ or ${\cal G}_B$ bosonic fractional quantum Hall states that "partially fill" the $E_8$ state and are pairwise related by a generalized particle-hole symmetry. These long-range entangled states feature either Abelian or non-Abelian topological order. Some support the emergence of non-local Dirac and Majorana fermions, Ising anyons, metaplectic anyons, Fibonacci anyons, as well as deconfined $\mathbb{Z}_2$ gauge fluxes and charges.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Comparison of edge turbulence characteristics between DIII-D and C-Mod simulations with XGC1

The physical processes taking place at the separatrix and scrape-off layer regions are crucial for the operation of tokamaks as they govern the interaction of hot plasma with the vessel walls. Numerical modeling of the edge with state-of-the-art codes attempts to elucidate the complex interactions between neoclassical drifts, turbulence, poloidal and parallel flows that control the physical set-up of the SOL region. Here, we present post-processing analysis of simulation results from the gyrokinetic code XGC1, comparing and contrasting edge turbulence characteristics from a simulation of the DIII-D tokamak against a simulation of the Alcator C-Mod tokamak. We find that the equilibrium ExB flux across the separatrix has a similar poloidal pattern in both discharges which can be explained by rB-drifts and trapped ion excursions. Furthermore, collisionality is noted to play a major role in the way that it prevents local charge accumulations from having more global effects in the C-Mod case. In both cases, turbulent electron heat flux is observed to be higher than the ion one and is possibly related to the need of electrons to maintain quasineutrality through the only channel available to them for exiting the confinement. By Fourier analysis, we identify turbulent frequencies and growth rates of the dominant mode in both simulations. In the case of C-Mod, these numbers point to the presence of a drift wave. In the DIII-D case, further linear simulations with the Gene code reveal a trapped electron mode. Furthermore, using a blob detection and tracking tool, we present the amplitude and size distributions of the blobs from both simulations. The amplitude distributions are in qualitative agreement with experimental observations while the size distributions are consistent with the fact that most of the blobs are not connecting to the divertor plates and suggest that they are generated by the shearing of the turbulent modes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

How the Size and Density of Charge-Transfer Excitons Depend on Heterojunction’s Architecture

We have characterized the size, intensity, density, and distribution of charge-transfer (CT) excitons as a function of the acceptor–donor architecture of prototypical organic interfaces. This characterization was done by computational analysis of 17 models of varying numbers, positions, and orientations of the donor and acceptor molecules. The models’ building blocks were phenyl-C61-butyric acid methyl ester (PCBM) fullerene acceptors and dual-band donor polymers composed of thiophene, benzothiadiazole, and benzotriazole subunits. The electronic structure of the donor–acceptor complexes was computed with the time-dependent long-range-corrected density-functional tight-binding method and analyzed with the fragment-based one-electron transition density matrix. In all models, the complexes with edge-on orientation have denser spectra of low-energy CT states lying below the absorption bands compared to the complexes with face-on orientation. This CT-state distribution in edge-on complexes provides a gate to efficiently populate cold CT excitons. Moreover, the cold CT excitons have a higher degree of charge separation in the edge-on than in the face-on complexes. The CT amount and the CT exciton size generally increase with the energy of the CT states, although the electron remains localized on a single molecule in cold CT states. Delocalization over two PCBM molecules was observed for high-energy CT states. The exciton size also depends on the orientation. Larger excitons are produced by the delocalization of the electrons perpendicularly to the interface. When the delocalization is parallel, the smaller electron–hole distances yield moderately sized CT excitons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Colloidal Nanoribbons: From Infrared to Visible

Using the cation-exchange method, colloidal PbS nanoribbons are converted completely into CdS nanoribbons. This process expands the emission spectrum of the nanoribbons from infrared to visible. Here, the morphology of nanoribbons remains the same after cation exchange, but the crystal structure changes from rock salt to zincblende. CdS nanoribbons exhibit blue band-edge photoluminescence under ultraviolet-light excitation. Cathodoluminescence spectroscopy of the CdS nanoribbons shows multicolor (blue, green, and red) emissions. Further time-resolved photoluminescence spectroscopy studies show that the lifetime of the midgap states is more than 2 orders of magnitude longer than that of the band-edge states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Modular Commutators in Conformal Field Theory

The modular commutator is a recently discovered entanglement quantity that quantifies the chirality of the underlying many-body quantum state. In this Letter, we derive a universal expression for the modular commutator in conformal field theories in 1 + 1 dimensions and discuss its salient features. We show that the modular commutator depends only on the chiral central charge and the conformal cross ratio. We test this formula for a gapped (2 + 1)-dimensional system with a chiral edge, i.e., the quantum Hall state, and observe excellent agreement with numerical simulations. Furthermore, we propose a geometric dual for the modular commutator in certain preferred states of the AdS/CFT correspondence. Finally, for these states, we argue that the modular commutator can be obtained from a set of crossing angles between intersecting Ryu-Takayanagi surfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation

Here, we report the first nonjellium, systematic, density functional theory (DFT) study of intrinsic and extrinsic defects and defect levels in zinc-blende (cubic) gallium nitride. We use the local moment counter charge (LMCC) method, the standard Perdew-Becke-Ernzerhoff (PBE) exchange-correlation potential, and two pseudopotentials, where the Ga 3$\textit{d}$ orbitals are either in the core ($d^0$) or explicitly in the valence set ($d^{10}$). We studied 64, 216, 512, and 1000 atom supercells, and demonstrated convergence to the infinite limit, crucial for delineating deep from shallow states near band edges, and for demonstrating the elimination of finite cell-size errors. Contrary to common claims, we find that exact exchange is not required to obtain defect levels across the experimental band gap. As was true in silicon, silicon carbide, and gallium arsenide, the extremal LMCC defect levels of the aggregate of defects yield an effective LMCC defect band gap that is within 10% of the experimental gap (3.3 eV) for both pseudopotentials. We demonstrate that the gallium vacancy is more complicated than previously reported. There is dramatic metastability–a nearest-neighbor nitrogen atom shifts into the gallium site, forming an antisite, nitrogen vacancy pair, which is more stable than the simple vacancy for positive charge states. Our assessment of the $d^0$ and $d^{10}$ pseudopotentials yields minimal differences in defect structures and defect levels. The better agreement of the $d^0$ lattice constant with experiment suggests that the more computationally economical $d^0$ pseudopotentials are sufficient to achieve the fidelity possible within the physical accuracy of DFT, and thereby enable calculations in larger supercells necessary to demonstrate convergence with respect to finite size supercell errors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Bending-induced isostructural transitions in ultrathin layers of van der Waals ferrielectrics

Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is the existence of two ferrielectric states, FI1 and FI2, corresponding to big and small polarization values, which arise due to the specific four-well potential of the eighth-order LGD functional. When the CIPS layer is flat, the single-domain FI1 state is stable in the central part of the layer, and the FI2 states are stable near the fixed edges. With an increase of the layer bending below the critical value, the sizes of the FI2 states near the fixed edges decreases, and the size of the FI1 region increases. When the bending exceeds the critical value, the edge FI2 states disappear being substituted by the FI1 state, but they appear abruptly near the inflection regions and expand as the bending increases. The bending-induced isostructural FI1-FI2 transition is specific for the bended van der Waals ferrielectrics described by the eighth (or higher) order LGD functional with consideration of linear and nonlinear electrostriction couplings. Furthermore, the isostructural transition, which is revealed in the vicinity of room temperature, can significantly reduce the coercive voltage of ferroelectric polarization reversal in CIPS nanoflakes, allowing for the curvature-engineering control of various flexible nanodevices.

36 MATERIALS SCIENCE↗