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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Ellipsometric study of cubic SiC

Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.

Alterovitz, Samuel A.↗
NASA NTRS1990

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.

Alterovitz, S. A.↗
NASA NTRS1991

Ellipsometric study of metal samples

Exposed and unexposed (shielded) portions of the surfaces of six different metal samples (Al, Cu, Ni, Ta, W, and Zr) that had been mounted on LDEF were studied by variable angle spectroscopic ellipsometry. The change in the optical constants of the metals caused by exposure to the space environment was measured. The measured optical constants reflect changes in the morphology and stoichiometry of a surface layer to a depth of this order of magnitude. For all the samples examined in this manner the exposed and unexposed portions exhibited dramatically different optical properties. In order to determine whether the observed changes were caused by the impact of oxygen atoms encountered in flight an experiment was set up in which samples identical to the original metal samples are exposed to a low-energy oxygen plasma in a microwave discharge chamber. Results of this experiment are reported, as well as an analysis of the observed data in terms of surface layers of different composition.

Franzen, W.↗
NASA NTRS1989

Surface roughness of flat and curved optical surfaces

Surface roughness measurement has several applications. Even a few A roughness will cause scattered light in optical systems. Smooth surfaces are required in a wide variety of instruments. For example, the outputs of the high power lasers are limited by the surface roughness of mirrors and windows. Similarly, the information storage capacity of magnetic media is limited by the roughness of the surface. Roughness reduces the resolving power of optics and distorts images. The performance of certain thin film components in electronic industries is affected by the roughness on the film surface. X-ray astronomical telescopes require smooth curved surfaces. To improve the surface quality, super sensitive detection methods are required. Wide ranging measurement techniques are developed based on interferometry, electron microscopy, C-rays, ellipsometry, light scattering, and using mechanical stylus, etc. Though there are several techniques available for measurement and evaluation of the surfaces, no single technique is fully adequate. Also, the technique used should be nondestructive and highly sensitive. So, an optical heterodyne profilometer was fabricated. Its current sensitivity is much better than 10A rms. It is a noncontact and nondestructive technique. The instrument can be operated even by unskilled personnel for routine measurements.

George, M. C.↗
NASA NTRS1990

Ellipsometric analysis of materials degradation in space

The fundamentals of variable angle spectroscopic ellipsometry (VASE) are reviewed, and its usefulness in studying the effect of atomic oxygen on space coatings such as indium tin oxide (ITO), silicon dioxide, and aluminum oxide is discussed. Monolayer sensitive and nondestructive VASE is found to be an effective technique for monitoring the atomic oxygen diffusion through the aluminum oxide and silicon dioxide protective overcoatings on space reflectors. Ashing of ITO/silicon samples had the net effect of annealing the film inside the plasma. The annealing effect was supported both by structural changes as verified by X-ray diffraction measurements and by increased absorbance in the spectral range below 3 eV as measured by VASE.

Woollam, John A.↗
NASA NTRS1991

Temperature dependence of optical properties of GaAs

The effect of temperature on the optical properties of GaAs was investigated using spectroscopic ellipsometry measurements, between room temperature and about 610 C in increments of 50 C, of pseudodielectric functions and related optical constants of GaAs. A quantitative analysis of the pseudodielectric function spectrum was carried out using a harmonic-oscillator approximation (HOA) to fit the measured dielectric functions. Good fits were obtained with this model, which provides a convenient means of reproducing the GaAs dielectric function at any temperature, by using the temperature-dependent oscillator parameters. The HOA analysis also provides information about band-gap variation with temperature. Using the measured optical constants at a number of fixed temperatures, an algorithm was developed for computing the dielectric function spectrum at an arbitrary temperature in the range 22-610 C.

Yao, Huade↗
NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗
NASA NTRS1991

A new technique for oil backstreaming contamination measurements

Due to the large size and the number of diffusion pumps, space simulation chambers cannot be easily calibrated by the usual test dome method for measuring backstreaming from oil diffusion pumps. In addition, location dependent contamination may be an important parameter of the test. The backstreaming contamination was measured in the Space Power Facility (SPF) near Sandusky, OH, the largest space simulation vacuum test chamber in the U.S.. Small clean silicon wafers placed at all desired measurement sites were used as contamination sensors. The facility used diffusion pumps with DC 705 oil. The thickness of the contamination oil film was measured using ellipsometry. Since the oil did not wet the silicon substrate uniformly, two analysis models were developed to measure the oil film: (1) continuous, homogeneous film; and (2) islands of oil with the islands varying in coverage fraction and height. In both cases, the contamination film refractive index was assumed to be that of DC 705. The second model improved the ellipsometric analysis quality parameter by up to two orders of magnitude, especially for the low coverage cases. Comparison of the two models shows that the continuous film model overestimates the oil volume by less than 50 percent. Absolute numbers for backstreaming are in good agreement with published results for diffusion pumps. Good agreement was also found between the ellipsometric results and measurements done by x-ray photoelectron spectroscopy (XPS) and by scanning electron microscopy (SEM) on examples exposed to the same vacuum runs.

Alterovitz, S. A.↗
NASA NTRS1992

Ellipsometric study of oxide films formed on LDEF metal samples

The optical constants of samples of six different metals (Al, Cu, Ni, Ta, W, and Zr) exposed to space on the Long Duration Exposure Facility (LDEF) were studied by variable angle spectroscopic ellipsometry. Measurements were also carried out on portions of each sample which were shielded from direct exposure by a metal bar. A least-squares fit of the data using an effective medium approximation was then carried out, with thickness and composition of surface films formed on the metal substrates as variable parameters. The analysis revealed that exposed portions of the Cu, Ni, Ta, and Zr samples are covered with porous oxide films ranging in thickness from 500 to 1000 A. The 410 A thick film of Al2O3 on the exposed Al sample is practically free of voids. Except for Cu, the shielded portions of these metals are covered by thin non-porous oxide films characteristic of exposure to air. The shielded part of the Cu sample has a much thicker porous coating of Cu2O. The tungsten data could not be analyzed.

Franzen, W.↗
NASA NTRS1992

Interaction of atomic oxygen with thin film and bulk copper: An XPS, AES, XRD, and profilometer study

The University of Alabama in Huntsville (UAH) experiment A-0114 was designed primarily to study degradation of material surfaces due to low earth orbital (LEO) atmospheric oxygen. The experiment contained 128 one inch circular samples: metals, polymers, carbons, and semiconductors. Among metal samples, copper has shown some interesting new results. Two types of copper samples, a film sputter coated on fused silica and a bulk piece of OFHC copper, were characterized employing a variety of techniques such as X-ray and Auger electron spectroscopies, X-ray diffraction, and high resolution profilometry. Cu 2p core level spectra were used to characterize the presence of Cu2O and CuO in addition to Cu Auger LMM lines. These results are supported by our recent X-ray diffraction studies which clearly establish the presence of Cu oxides which we were unable to prove in our earlier work. Profilometry showed an increase in thickness of the film sample where exposed to 106.7 +/- 0.5 nm from an initial thickness of 74.2 +/- 1.1 nm. Further studies with SEM and ellipsometry are underway.

Raikar, Genesh N.↗
NASA NTRS1992

Surface characterization and adhesion of oxygen plasma-modified LARC-TPI

LARC-TPI, an aromatic thermoplastic polyimide, was exposed to an oxygen plasma as a surface pretreatment for adhesive bonding. Chemical and physical changes which occurred in the polyimide surface as a result of the plasma treatment were investigated using X-ray photoelectron spectroscopy (XPS), infrared reflection-absorption spectroscopy (IR-RAS), contact-angle analysis, ellipsometry, and high resolution SEM. A 180-deg peel test with an acrylate-based pressure sensitive adhesive as a flexible adherent was utilized to study the interactions of the plasma-treated polyimide surface with other polymeric materials. The surface characterization and adhesion testing results showed that the oxygen plasma treatment, while creating a more hydrophilic, polar surface, also caused chain scission, resulting in the formation of a weak boundary layer which inhibited adhesion.

Chin, J. W.↗
NASA NTRS1993

Optical properties and spectral emissivities at 632.8 nm in the titanium-aluminum system

Optical properties (including spectral emissivity, refractive index, and extinction coefficient) of liquid Ti-Al alloys were measured as functions of temperature (including temperatures up to 350 K below the equilibrium liquidus temperatures), using laser ellipsometry at 632.8 nm. The experiments were conducted under containerless conditions, using electromagnetic levitation and heating supplemented by CO2 laser beam heating. It is shown that the emissivities of liquid Ti-Al alloy vary with temperature in a manner that can be understood by the same theories which are applicable to solid metals, for regions near to and above the liquidus temperature. At temperatures below the liquidus temperature, the optical properties of highly undercooled liquid Ti-Al alloys are not dependent on temperature.

Krishnan, S.↗
NASA NTRS1993

Low earth simulation and materials characterization

Oxygen plasma ashers and an electron cyclotron resonance (ECR) sources are currently being used for low Earth orbit (LEO) simulation. The suitability of each of these simulation techniques is considered. Thin film coatings are characterized by optical techniques, including variable-angle spectroscopic ellipsometry, optical spectrophotometry, and laser light scatterometry. Atomic force microscopy (AFM) has been used to characterize the surface morphology of thin aluminum films as a function of substrate temperature during deposition. Results on diamondlike carbon (DLC) films show that DLC degrades with simulated atomic oxygen (AO) exposure at a rate comparable to Kapton polyimide. Since DLC is not as susceptible as Kapton to environmental factors such as moisture absorption, it could potentially provide more accurate measurements of AO fluence on short space flights.

Synowicki, R. A.↗
NASA NTRS1993

Production and optical constraints of ice tholin from charged particle irradiation of (1:6) C2H6/H2O at 77 K

Fifty separate irradiations of a 6:1 mixture of H2O/C2H6 ice conducted over a 5-month period have yielded sufficient tholin for the determination of its physical constants in the 0.06 to 40 micron range. While the imaginary part of the refractive index k was obtained by transmission measurements on thin-film samples and Kramers-Kronig analysis (KKA), the real part of the refractive index was obtained by KKA and ellipsometry; these data may prove useful in cometary and outer solar system spectrometric interpretation.

Khare, B. N.↗
NASA NTRS1993

General technique for discrete retardation-modulation polarimetry

The general theory and rigorous solutions of the Stokes parameters of light of a new technique in time-resolved ellipsometry are outlined. In this technique the phase of the linear retarder is stepped over three discrete values over a time interval for which the Stokes vector is determined. The technique has an advantage over synchronous detection techniques, as it can be implemented as a digitizable system.

Saxena, Indu↗
NASA NTRS1993

Ellipsometric characterization of In(0.52)Al(0.48)As and of modulation doped field effect transistor structures on InP substrates

The dielectric function of a thick layer of In(0.52)Al(0.48)As lattice matched to InP was measured by variable angle spectroscopic ellipsometry in the range 1.9-4.1 eV. The In(0.52)Al(0.48)As was protected from oxidation using a thin In(0.53)Ga(0.47)As cap that was mathematically removed for the dielectric function estimate. The In(0.52)Al(0.48)As dielectric function was then verified by ellipsometric measurements of other In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures, including (MODFET), and is shown to provide accurate structure layer thicknesses.

Alterovitz, S. A.↗
NASA NTRS1992

Tribological evaluation and analysis of coating materials

A physical characterization of coating materials by analytical techniques such as XPS, AES, ellipsometry, and nuclear reaction analysis can contribute to the understanding of adhesion and friction of the coatings and can partially predict the tribological properties of the coatings. This two-part paper describes the tribological properties and physical characteristics of (1) diamondlike carbon (DLC) films and (2) silicon nitride (SiN(x)) films. Emphasis is to relate plasma deposition conditions to the film chemistry and composition and to the adhesion and friction of the films. With the DLC films, the higher the plasma deposition power, the less the hydrogen concentration and the greater the film density and the hardness. The friction behavior of DLC films deposited at higher deposition powers (200 to 300 W) is similar to that of bulk diamond. Even in a vacuum, the DLC films effectively lubricate ceramic surfaces (Si3N4) at temperatures to 500 C. With SiN(x) films, the silicon to nitrogen ratios and the amount of amorphous silicon depend on deposition frequency. The presence of rich amorphous silicon in the high-frequency plasma-deposited SiN(x) films increases their adhesion and friction above 500 C in vacuum.

Miyoshi, Kazuhisa↗
NASA NTRS1992

Thermal oxidation of single-crystal silicon carbide - Kinetic, electrical, and chemical studies

This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H SiC in wet and dry oxidizing ambients. Values for the linear and parabolic rate constants were obtained, as well as preliminary results for the activation energies of the rate constants. Examples are presented describing how thermal oxidation can be used to map polytypes and characterize defects in epitaxial layers grown on low tilt angle 6H SiC substrates. Interface widths were measured using Auger electron spectroscopy (AES) with Ar ion beam depth profiling and variable angle spectroscopic ellipsometry (VASE) with effective medium approximation (EMA) models. Preliminary electrical measurements of MOS capacitors are also presented.

Petit, J. B.↗