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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Scientific results from the materials processing in space program

Scientific experiments conducted in a low-gravity environment make it possible to study effects, such as surface tension-driven flows, which are often masked by buoyancy-driven flows. A summary is provided of several early experiments which demonstrate that unwanted convective flows can be effectively suppressed in experiments conducted in orbiting spacecraft. Possible applications of low-G processing are discussed, taking into account Bridgman growth of solid solution alloy-type semiconductors, Bridgman growth of eutectic systems, and float-zone crystal growth. The control of macrosegregation and phase separation in castings is considered, giving attention also to containerless melting and solidification. A description of experiment facilities and opportunities is provided.

Naumann, R.↗
NASA NTRS1985

Process and design considerations for high-efficiency solar cells

This paper shows that oxide surface passivation coupled with optimum multilayer anti-reflective coating can provide approx. 3% (absolute) improvement in solar cell efficiency. Use of single-layer AR coating, without passivation, gives cell efficiencies in the range of 15 to 15.5% on high-quality, 4 ohm-cm as well as 0.1 to 0.2 ohm-cm float-zone silicon. Oxide surface passivation alone raises the cell efficiency to or = 17%. An optimum double-layer AR coating on oxide-passivated cells provides an additional approx. 5 to 10% improvement over a single-layer AR-coated cell, resulting in cell efficiencies in excess of 18%. Experimentally observed improvements are supported by model calculations and an approach to or = 20% efficient cells is discussed.

Rohati, A.↗
NASA NTRS1984

Advanced module development overview

Crystalline silicon solar power modules are examined for reliability and cost effectiveness. A goal of 12% solar energy conversion efficiency is considered feasible at a cost of 12/kWh, and a decision is made to limit consideration to float zone silicon wafer and dendritic web silicone modules. A preliminary module packaging configuration of glass/ethylene vinyl acetate/plastic film is selected. Anticipated module efficiency levels are 12.6% at 25 C and 11.5% at NOCT (Nominal Operating Cell Temperature).

Smokler, M. I.↗
NASA NTRS1985

Materials requirements for high-efficiency silicon solar cells

To achieve higher Si solar cell efficiencies (greater than 20%), better single-crystal Si must be produced. It is believed possible to bring Cz (Czochralski) Si up to the same low recombination level as FZ (Float Zone) Si. It is also desirable that solar cell Si meet the following requirements: long minority carrier lifetime (0.2 ohm-cm p-type with tau less than 500 microsec); repeatedly uniform lifetime (not spread from 50 to 1000 microsec); a lifetime that does not decrease during normal device processing; a silicon wafer sheet that is flat and stays throughout normal device processing; uniform and reasonable mechanical strength; and, manufacture at low cost (less than $50/sq m).

Wolf, M.↗
NASA NTRS1985

High purith low defect FZ silicon

The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.

Kimura, H.↗
NASA NTRS1985

Defects and device performance

The necessity for a low-cost crystalline silicon sheet material for photovoltaics has generated a number of alternative crystal growth techniques that would replace Czochralski (Cz) and float-zone (FZ) technologies. Efficiencies of devices fabricated from low resistivity FZ silicon are approaching 20%, and it is highly likely that this value will be superseded in the near future. However, FZ silicon is expensive, and is unlikely ever to be used for photovoltaics. Cz silicon has many of the desirable qualities of FZ except that minority-carrier lifetimes at lower resistivities are significantly less than those of FZ silicon. Even with Cz silicon, it is unlikely that cost goals can be met because of the poor-material yield that results from sawing and other aspects of the crystal rowth. Although other silicon sheet technologies have been investigated, almost all have characteristics that limit efficiency to approx. 16%. In summary, 20% efficient solar cells can likely be fabricated from both FZ and Cz silicon, but costs are likely to be ultimately unacceptable. Alternate silicon technologies are not likely to achieve this goal, but cost per watt figures may be eventually better than either of the single crystal technologies and may rival any thin-film technology.

Storti, G.↗
NASA NTRS1985

Stress studies in edge-defined film-fed growth of silicon ribbons

Stress and efficiency studies on sheet silicon are reported. It was found that the bulk diffusion length of stressed float zone and Czochralski silicon is limited by point defect recombination to about 20 micrometers in dislocation free regions after high temperature heat treatment and stress application. If in-diffusion by iron occurs, dislocations, carbon and oxygen, do not produce significant gettering with annealing. Further work ideas are suggested.

Kalejs, J.↗
NASA NTRS1985

High-purity silicon crystal growth investigations

The study of silicon sheet material requirements for high efficiency solar cells is reported. Research continued on obtaining long lifetime single crystal float zone silicon and on understanding and reducing the mechanisms that limit the achievement of long lifetimes. The mechanisms studied are impurities, thermal history, point defects, and surface effect. The lifetime related crystallographic defects are characterized by X-ray topography and electron beam induced current.

Ciszek, T. F.↗
NASA NTRS1985

High-efficiency module design

Progress on the development of a high efficiency module is described. The effort includes development of high efficiency cells using crystalline silicon wafers from float zone silicon. Module-size cells, 53 sq cm in area, were fabricated with efficiency of 18%. Operating temperature reduction is also studied.

Spitzer, M. B.↗
NASA NTRS1986

A review of high-efficiency silicon solar cells

Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

Rohatgi, A.↗
NASA NTRS1986

Laser-assisted solar cell metallization processing

The status of the laser-assisted solar cell metallization processing is described. Metallo-organic silver films were spun-on by argon ion laser beam pyrolysis. The metallo-organic decomposition (MOD) film was spun-on an evaporated Ti/Pd film to produce tood adhesion. In a maskless process, the argon ion laser writes the contact pattern. The film is then built up to obtain the required conductivity using conventional silverplating process. The Ti/Pd film in the field is chemically etched using the plated silver film as the mask. The width of the contact pattern is determined by the power of the laser. Widths as thin as 20 microns were obtained using 0.66 W of laser power. Cells fabricated with the 50 micron line widths of 4 ohm-cm floating zone (Fz) silicon-produced efficiencies of 16.6% (no passivation) which were equivalent to the best cells using conventional metallization/lithography and no passivation.

Meier, D. L.↗
NASA NTRS1986

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Fonash, S. J.↗
NASA NTRS1987

Processing and characterization of high-efficiency

Silicon solar cells with efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high efficiency terrestrial solar cells. Preliminary results indicate that the high efficiency cell is more susceptible to radiation damage in that it retains a smaller proportion of its original power output when compared to conventional space cells after exposure to 5 times 10 to the 14th power 1 MeV electrons. However, the cell does maintain a greater overall power output than the conventional cells to which it was compared. Furthermore, this cell does not demonstrate post-electron irradiation photon decay as has been described for cells processed on 1-10 ohm-cm float zone silicon.

Crotty, G. T.↗
NASA NTRS1986

High-efficiency silicon solar cells - Development, current issues and future directions

This paper provides a review of material, process, and design considerations that are essential for achieving high-efficiency silicon solar cells. It describes an approach that resulted in 18.0-18.5-percent-efficient cells on low-resistivity float-zone silicon material. It is shown experimentally that a combination of surface passivation and double-layer antireflection coating can provide 2-3 percent (absolute) improvement in cell efficiency provided the material, process and cell design are carefully selected.

Rohatgi, A.↗
NASA NTRS1986

Materials processing in space - Review of the early experiments

Basic research performed to study various aspects of fluid behavior in a microgravity environment during the first two decades of spaceflight is described. The uniqueness of space was recognized in the 1950s as a place where buoyancy-driven convective flows and sedimentation would effectively be absent. The conditions were favorable for experiments in crystal growth, alloy solidification, combustion, thermocapillary flows, electroosmotic flows, Stefan flows, Soret diffusion, and solidification processes. Pre-Skylab NASA drop tower experiments and Apollo 14 and 17 experiments made in preparation for Skylab are described. Skylab welding and brazing, crystal growth, metallurgy and liquid float zone trials and Apollo-Soyuz crystal growth, electrophoresis and metallurgical experiments are summarized. SPAR rocket trials along similar lines are also outlined.

Naumann, Robert J.↗
NASA NTRS1987

Performance improvements in silicon flat-plate cells and modules

This paper reports the development of a flat-plate module based on highly efficient ion-implanted silicon solar cells. The cells developed in this work are 53 sq cm in area and have exhibited AM 1.5 efficiencies of over 18 percent. The use of back surface reflectors to reduce module operating temperature is discussed. A comparison of various approaches to cell design is made, and module test data for these designs are presented. A comparison of float zone and Czochralski silicon is made. Module efficiency of over 15 percent (at 25 C) is reported.

Spitzer, M. B.↗
NASA NTRS1987

Development of a new generation of high-temperature composite materials

There are ever-increasing demands to develop low-density materials that maintain high strength and stiffness properties at elevated temperatures. Such materials are essential if the requirements for advanced aircraft, space power generation, and space station plans are to be realized. Metal matrix composites and intermetallic matrix composites are currently being investigated at NASA Lewis for such applications because they offer potential increases in strength, stiffness, and use temperature at a lower density than the most advanced single-crystal superalloys presently available. Today's discussion centers around the intermetallic matrix composites proposed by Lewis for meeting advanced aeropropulsion requirements. The fabrication process currently being used at Lewis to produce intermetallic matrix composites will be reviewed, and the properties of one such composite, SiC/Ti3Al+Nb, will be presented. In addition, the direction of future research will be outlined, including plans for enhanced fabrication of aluminide composites by the arc spray technique and fiber development by the floating-zone process.

Brindley, Pamela K.↗
NASA NTRS1987

The economic payoff for a state-of-the-art high-efficiency flat-plate crystalline silicon solar cell technology

In 1986 during the flat-plate solar array project, silicon solar cells 4.0 sq cm in area were fabricated at the Jet Propulsion Laboratory (JPL) with a conversion efficiency of 20.1 percent (AM1.5-global). Sixteen cells were processed with efficiencies measuring 19.5 percent (AM1.5 global) or better. These cells were produced using refined versions of conventional processing methods, aside from certain advanced techniques that bring about a significant reduction in a major mechanism (surface recombination) that limits cell efficiency. Wacker Siltronic p-type float-zone 0.18-ohm-cm wafers were used. Conversion efficiencies in this range have previously been reported by other researchers, but generally on much smaller (0.5 vs. 4.0 cm) devices which have undergone sophisticated and costly processing steps. An economic analysis is presented of the potential payoffs for this approach, using the Solar Array Manufacturing Industry Costing Standards (SAMICS) methodology. The process sequence used and the assumptions made for capturing the economies of scale are presented.

Bickler, Donald B.↗