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The general architecture of the imaging array, some merits of HgCdTe-on-sapphire as a detector material, and the current status of the laboratory tests and the Short Wave Infrared (SWIR) camera are described.
Two solid-state sensors for use in remote sensing instruments operating in the pushbroom mode are examined. The design and characteristics of the visible/near-infrared (VIS/NIR) device and the short-wavelength infrared (SWIR) device are described. The VIS/NIR is a CCD imager with four parallel sensor lines, each 1024 pixel long; the chip design and filter system of the VIS/NIR are studied. The performance of the VIS/NIR sensor with mask and its system performance are measured. The SWIR is a dual-band line imager consisting of palladium silicide Schottky-barrier detectors coupled to CCD multiplexers; the performance of the device is analyzed. The substrate materials and layout designs used to assemble the 4 x 5120-element VIS/NIR array and the 2 x 2560-element SWIR array are discussed, and the planarity of the butted arrays are verified using a profilometer. The optical and electrical characteristics, and the placement and butting accuracy of the arrays are evaluated. It is noted that the arrays met or exceed their expected performance.
An intensified-CCD detector system developed for space applications from commercially available components is described. This detector uses components which are readily available and are mechanically, thermally, and optically coupled to produce the final compact system. The CCD is cooled using a Peltier-effect thermoelectric cooler to reduce thermal noise. The image is formed on the photocathode of a proximity-focused image intensifier and is transferred fiber-optically from the intensifier to the CDD. Various photocathode and window materials are used to optimize the system for use within the wavelength range extending from the far UV to the near IR. The basic design, including the image intensifier, intensifier-CCD interface, CCD array, cooling, electronics, and mounting, and the detector performance are described in detail.
A computer simulation program is described which is used to estimate the effects of a proximate diffraction fence on the performance of paraboloid antennas. The computer program is written in FORTRAN. The physical problem, mathematical formulation and coordinate references are described. The main control structure of the program and the function of the individual subroutines are discussed. The Job Control Language set-up and program instruction are provided in the user's instruction to help users execute the present program. A sample problem with an appropriate output listing is made available as an illustration of the usage of the program.
A development status evaluation is presented for solid-state self-scanned imaging arrays applicable to NASA space science missions, giving attention to the visible and IR spectral range (0.5-1000 microns). Shortward of 1.1 micron, Si CCDs will continue to be used. Beyond 10 microns, the challenge for NASA researchers lies in the development of a class of detectors that can dispense with the conventional cooling to below 10 K. Above 25 microns, extrinsic Ge detectors will be used, and beyond 200 microns, a novel extrinsic material such as GaAs will have to be developed for this application.
This paper describes an X-ray polarimeter that will be flown on the Spectrum X-Gamma mission. The instrument exploits three distinct physical processes to measure polarization: Bragg reflection from a graphite crystal, Thomson scattering from a metallic lithium target, and photoemission from a cesium iodide photocathode. These three methods allow polarization measurements over an energy band from 0.3 to 12 keV. The polarimeter will make possible sensitive measurements of several hundred known X-ray sources. X-ray polarization measurements will make it possible to constrain the geometry of gas flow in X-ray binaries, identify nonthermal emission in supernova remnants, test current models for X-ray emission in radio pulsars, determine the radiation mechanisms in active galactic nuclei, and search for inertial frame dragging (Lense-Thirring effect) around the putative black hole in Cygnus X-1.
A frame-transfer silicon charge-coupled-device (CCD) imager has been developed that can be closely abutted to other imagers on three sides of the imaging array. It is intended for use in multichip arrays. The device has 420 x 420 pixels in the imaging and frame-store regions and is constructed using a three-phase triple-polysilicon process. Particular emphasis has been placed on achieving low-noise charge detection for low-light-level imaging in the visible and maximum energy resolution for X-ray spectroscopic applications. Noise levels of 6 electrons at 1-MHz and less than 3 electrons at 100-kHz data rates have been achieved. Imagers have been fabricated on 1000-Ohm-cm material to maximize quantum efficiency and minimize split events in the soft X-ray regime.
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We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.
The Space Infrared Telescope Facility (SIRTF) will have three science instruments, the Infrared Array Camera (IRAC) which will obtain multispectral images between 1.8 micron and 26 microns, the Infrared Spectrometer (IRS) which is a set of two dispersive spectrometers covering the wavelength range between 2.5 and 200 microns, and the Multiband Imaging Photometer for SIRTF (MIPS) which is a general-purpose photometric instrument which operates between 30 and 1,200 microns. Taken together, the full wavelength range of these instruments extends from 1.8 micron to 1,200 microns, equivalent to nearly a factor of 700 in photon energy and diffraction limited image size. In addition to supporting this unprecedented spectral and optical coupling requirement, the SIRTF detectors must operate at lower temperatures than previously demonstrated and be optimized for new levels of performance in order to achieve the goals of the science mission. Thus, development of the detector arrays for the SIRTF instruments is one of the most challenging aspects of the instrument development activities.
The NOAO's 8-m IR optimized telescope for Mauna Kea and NASA's SIRTF show that from 1 to 200 microns there are a number of unfulfilled needs in readout electronics. These include: extremely low readnoise, less than 10 electrons, stable operation at temperatures as low as 2 K, high well capacity, greater than 1 e 7 electrons, and integration times from 30 msec to over 100 sec. Sensors for adaptive optics systems are required with readnoise less than 10 electrons and response times of 30 msec. They should be highly efficient from 1 to 2.5 microns, but may have small formats. Ground-based imagers at these wavelengths need comparable readnoise but longer integration times, and the largest possible formats are essential. To achieve these goals improved cryogenic MOSFETS are essential and complete cryogenic CMOS circuits are highly desirable. Experimental cryoptimized MFETS promise to exceed the above noise requirements at 77 K and approach the needs at 2 K.
Applications were demonstrated for hybrid silicon infrared CCD arrays in both ground and space based astronomical instrumentation. The primary goal was to provide a point of departure for both instrument designs and further development of the device. The test device is an indium doped silicon (Si:In) version of the 32 x 32 Rockwell 30331 surface channel hybrid silicon IRCCD. The device structure and a typical instrument interface are shown. The motivation for further study is presented along with a discussion in detail of some of the issues.
Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.
Improved method devised for calculating gain of antenna system comprising main reflector and array of feed elements. Method involves much less computation; important advantage when necessary to compute gains repeatedly, with slight variations in design at each iteration, in effort to find optimum design.
We have developed a high-pressure Gas Scintillation Proportional Counter (GSPC) for the focus of a hard-x-ray telescope. It features an absorption region 50 mm in diameter and 50 mm deep, filled with Xenon + 4% He at 10(exp 6) Pa total pressure, which gives useful response (greater than 75% efficiency) up to the mirror cut-off of 70 keV. Tests with a prototype unit show an energy resolution of 3.5% at 60 keV and a spatial resolution of 0.35 mm from 30-50 keV. Two flight units are currently under construction for a balloon flight in September 1999. Full details of their design and performance will be presented together with available quick-look background data from the flight.
PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
The 200-micrometer to 3-mm wavelength range has great astronomical and cosmological significance. Science goals include characterization of the cosmic microwave background, measurement of the Sunyaev-Zel'dovich effect in galaxy clusters, and observations of forming galaxies. Cryogenic bolometers are the most sensitive broadband detectors in this frequency range. Because single bolometer pixels are reaching the photon noise limit for many observations, the development of large arrays will be critical for future science progress. Voltage-biased superconducting bolometers (VSBs) have several advantages compared to other cryogenic bolometers. Their strong negative electrothermal feedback enhances their linearity, speed, and stability. The large noise margin of the SQUID readout enables multiplexed readout schemes, which are necessary for developing large arrays. In this paper, we discuss the development of a large absorber-coupled array, a frequency-domain SQUID readout multiplexer, and an antenna-coupled VSB design.
The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 micrometers. The spectral band width of these detectors can be tuned from narrow (DELTA)lamba/lamba approx. 10 %)) to wide (DELTA)lamba/lamba approx. 50 %) allowing various applications. Also, QWIP offers multi-color infrared cameras which is capable of simultaneously acquiring images in different infrared bands. Each pixel of such array consists of vertically stacked, independently readable, QWIP detectors sensitive in different narrow infrared bands. In this article, we discuss the development and results of the 640 x 512 dual-band and four-band QWIP FPAs.