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At least 253 records · Page 14

Medium-resolution studies of extreme-ultraviolet emission from CO by electron impact

We report medium-resolution (0.025 nm full width at half maximum (FWHM)) electron impact-induced emission spectra of CO for 20, 100, and 200 eV impact energies. The emission spectra correspond to the extreme ultraviolet transitions from the B (sup 1)Sigma(sup +)(0), and E (sup 1)Pi(0) vibronic states to the X (sup 1)Sigma(sup +)(0) ground state. The present measurements are carried out at 20 times higher spectral resolution (to separate the many blended components) compared to our previous measurements, which were at a spectral resolution of 0.5 nm FWHM. The emission cross sections corresponding to the B (sup 1)Sigma(sup +)(0) yields X (sup 1)Sigma(sup +)(0), C (sup 1)Sigma(sup +)(0) yields X (sup 1)Sigma(sup +)(0), and E (sup 1)Pi(0) yields X (sup 1)Sigma(sup +)(0) resonance transitions were measured. In addition, excitation functions (0-1 keV) extending well into the Born region have been measured for the strong transitions (B (sup 1)Sigma(sup +)(0) yields X (sup 1)Sigma(sup +)(0) and C (sup 1)Sigma(sup +)(0)) and oscillator strengths have been determined, using a modified Born approximation analytic fit to the measured excitation function.

Kanik, Isik↗

Small ultrahigh vacuum compatible hyperthermal oxygen atom generator

The development of a compact, ultrahigh vacuum (UHV) compatible instrument for generating a flux of pure hyperthermal oxygen atoms for NASA applications has been achieved. The instrument combines the mechanisms of O2 dissociation and transport through a hot Ag membrane to provide a continuous source of O atoms to a vacuum interface where they are subsequently emitted into the vacuum space by electron-stimulated desorption (ESD). A flux of neutral O atoms 4.5 X 10(exp 13) cm(exp-2) s(exp-l)(P-3) with a mean ion kinetic energy of approximately 5eV and a full width at half maximum of 4eV was detected at a quadrupole mass spectrometer located 10 cm away. The geometry of the instrument is such that it is mounted on a 7 cm flange and can be tailored in length and orientation to fit most UHV systems. The data presented here are for ESD-controlled conditions where increases in the flux are strictly linear with electron bombardment current. Calculation shows that transport-controlled conditions can be achieved at temperatures as low as 350 C with membrane thicknesses on the order of 10 micron.

Outlaw, R. A.↗

The Imaging Properties of a Silicon Wafer X-Ray Telescope

Silicon wafers have excellent optical properties --- low microroughness and good medium-scale flatness --- which Make them suitable candidates for inexpensive flat-plate grazing-incidence x-ray mirrors. On short spatial scales (less than 3 mm) the surface quality of silicon wafers rivals that expected of the Advanced X-Ray Astrophysics Facility (AXAF) high-resolution optics. On larger spatial scales, however, performance may be degraded by the departure from flatness of the wafer and by distortions induced by the mounting scheme. In order to investigate such effects, we designed and constructed a prototype silicon-wafer x-ray telescope. The device was then tested in both visible light and x rays. The telescope module consists of 94 150-mm-diameter wafers, densely packed into the first stage of a Kirkpatrick-Baez configuration. X-ray tests at three energies (4.5, 6.4, and 8.0 keV) showed an energy-independent line spread function with full width at half maximum (FWHM) of 150 arcseconds, dominated by deviations from large-scale flatness.

Joy, M. K.↗

New Observations of Subarcsecond Photospheric Bright Points

We have used an interference filter centered at 4305 A within the bandhead of the CH radical (the 'G band') and real-time image selection at the Swedish Vacuum Solar Telescope on La Palma to produce very high contrast images of subarcsecond photospheric bright points at all locations on the solar disk. During the 6 day period of 1993 September 15-20 we observed active region NOAA 7581 from its appearance on the East limb to a near-disk-center position on September 20. A total of 1804 bright points were selected for analysis from the disk center image using feature extraction image processing techniques. The measured Full Width at Half Maximum (FWHM) distribution of the bright points in the image is lognormal with a modal value of 220 km (0 sec .30) and an average value of 250 km (0 sec .35). The smallest measured bright point diameter is 120 km (0 sec .17) and the largest is 600 km (O sec .69). Approximately 60% of the measured bright points are circular (eccentricity approx. 1.0), the average eccentricity is 1.5, and the maximum eccentricity corresponding to filigree in the image is 6.5. The peak contrast of the measured bright points is normally distributed. The contrast distribution variance is much greater than the measurement accuracy, indicating a large spread in intrinsic bright-point contrast. When referenced to an averaged 'quiet-Sun' area in the image, the modal contrast is 29% and the maximum value is 75%; when referenced to an average intergranular lane brightness in the image, the distribution has a modal value of 61% and a maximum of 119%. The bin-averaged contrast of G-band bright points is constant across the entire measured size range. The measured area of the bright points, corrected for pixelation and selection effects, covers about 1.8% of the total image area. Large pores and micropores occupy an additional 2% of the image area, implying a total area fraction of magnetic proxy features in the image of 3.8%. We discuss the implications of this area fraction measurement in the context of previously published measurements which show that typical active region plage has a magnetic filling factor on the order of 10% or greater. The results suggest that in the active region analyzed here, less than 50% of the small-scale magnetic flux tubes are demarcated by visible proxies such as bright points or pores.

Berger, T. E.↗

Line Profile of H Lyman-Beta Emission from Dissociative Excitation of H2

A high-resolution ultraviolet spectrometer was employed for a measurement of the H Lyman-Beta(H L(sub Beta)) emission Doppler line profile at 1025.7 A from dissociative excitation of H2 by electron impact. Analysis of the deconvolved line profile reveals the existence of a narrow central peak, less than 30 mA full width at half maximum (FWHM), and a broad pedestal base about 260 mA FWHM. Analysis of the red wing of the line profile is complicated by a group of Wemer and Lyman rotational lines 160-220 mA from the line center. Analysis of the blue wing of the line profile gives the kinetic-energy distribution. There are two main kinetic-energy components to the H(3p) distribution: (1) a slow distribution with a peak value near 0 eV from singly excited states, and (2) a fast distribution with a peak contribution near 7 eV from doubly excited states. Using two different techniques, the absolute cross section of H L(sub Beta)p is found to be 3.2+/-.8 x 10(exp -19)sq cm at 100-eV electron impact energy. The experimental cross-section and line-profile results can be compared to previous studies of H(alpha) (6563.7 A) for principal quantum number n=3 and L(sub alpha)(1215.7 A) for n=2.

Ajello, Joseph M.↗

Kinetic-Energy Distribution of D(2p) Atoms from Analysis of the D Lyman-Alpha Line Profile

The kinetic-energy distribution of D(2p) atoms resulting from electron-impact dissociation of D2 has been measured. A high-resolution vacuum ultraviolet spectrometer was employed for the first measurement of the D Lyman-alpha (D L(alpha)) emission line profiles at 20- and 100-eV excitation energies. Analysis of the deconvoluted line profile of D L(alpha) at 100 eV reveals the existence of a narrow line central peak of 29+/-2 mA full width at half maximum and a broad pedestal wing structure about 190 mA wide. The wings of the line can be used to determine the fast atom distribution. The wings of D L(alpha) arise from dissociative excitation of a series of doubly excited states that cross the Franck-Condon region between 23 and 40 eV. The fast atom distribution at 100-eV electron impact energy spans the energy range from 1 to 10 eV with a peak value near 6 eV. Slow D(2p) atoms characterized by a distribution function with peak energy near 100 meV produce the central peak profile, which is nearly independent of the impact energy. The deconvoluted line profiles of the central peak at 20 eV for dissociative excitation of D2 and H2 are fitted with an analytical function for use in calibration of space flight instrumentation equipped with a D/H absorption cell. The kinetic-energy and line profile results are compared to similar measurements for H2. The absolute cross sections for the line center (slow atoms) and wings (fast atoms) and total emission line profile were measured from threshold to 400 eV. Analytical model coefficients are given for the energy dependence of the measured slow atom cross section.

Ciocca, M.↗

Fast Nitrogen Atoms from Dissociative Excitation of N2 by Electron Impact

The Doppler profiles of one of the fine structure lines of the N I (1200 A) g (sup 4)S(sup 0)-(sup 4)P multiplet and of the N II (1085 A) g (sup 3)p(sup O)-(sup 3)D multiplet have been measured. Excitation of the multiplets is produced by electron impact dissociative excitation of N2. The experimental line profiles are evaluated by fast Fourier transform (FFT) techniques and analysis of the profiles yields the kinetic energy distribution of fragments. The full width at half maximum (FWHM) of N I (1200 A) increases from 27+/-6 mA at 30 eV to 37+/-4 mA at 100 eV as the emission cross section of the dissociative ionization excitation process becomes more important relative to the dissociative excitation process. The FWHM of the N II (1085 A) line is 36+/-4 mA at 100 eV. For each multiplet the kinetic energy distribution function of each of the two fragment N atoms (ions) is much broader than thermal with a mean energy above 1.0 eV. The dissociation process with the largest cross section is predissociation and predominantly produces N atoms with kinetic energy distributions having mean energies above 0.5 eV. Dissociative processes can lead to a substantial escape flux of N I atoms from the satellites, Titan and Triton of the outer planets.

Ajello, Joseph M.↗

Experiment 1: Orbital Processing of High-Quality Zn-Alloyed CdTe Compound Semiconductors

Zinc-alloyed cadmium telluride (Zn:CdTe) crystals were grown in unit gravity and in microgravity for comparative analysis. Two crystals were grown on USML-1/STS-50 in 1992, and two additional crystals were grown on USML-2/STS-73 in 1995. The Crystal Growth Furnace (CGF) in the seeded Bridgman-Stockbarger crystal growth geometry was utilized on both missions. Crystals grown on USML-1/STS-50 were found to have solidified with partial wall contact due to the near-absence of the hydrostatic pressure in microgravity, a residual g-vector that was not axial, and the nonwetting sample/ampoule wetting conditions. Crystals grown on USML-2/STS-73 included: a sample/ampoule identical to the USML-1/STS-73 sample/ampoule, with the addition of a restraining spring to simulate hydrostatic pressure internally, and a tapered ampoule which accomplished 2.2 cm of crystal growth without wall contact. Infrared transmission of all ground and flight samples was found to be 63-66 percent, very close to the theoretical 66 percent, suggesting good stoichiometric control. Infrared microscopy confirmed that the primary precipitates were Te and their size (1-10 microns) and density suggested that the flight- and ground-base samples experienced similar thermal histories. Longitudinal macrosegregation, calculated using scaling analysis, was predicted to be low. Nearly diffusion controlled growth was achieved even in unit gravity and macrosegregation data could be fit with a diffusion controlled model. Radial segregation was monitored and was found to vary with fraction solidified, particularly through the shoulder region, where the sample cross section was varying significantly. It was also disturbed in the flight samples in regions where asymmetric wall contact was noted. In regions where a steady state was established, the radial segregation was invariant within our experimental measurement error. Flight samples were found to be much higher in structural perfection than samples processed in unit gravity under identical growth conditions. In regions where solidification had occurred without wall contact, the free surfaces evidenced virtually no twinning, although twins appeared in the flight samples in regions of wall contact and were pervasive in the ground samples. These results were confirmed using optical microscopy and synchrotron x-ray white beam topography. Full-width half-maximum rocking curve widths (FWHM), recorded in arc-seconds, were significantly reduced from 20 a-s (1 g) to 9 a-s (micro-g) for the best regions of the crystals. The 9 a-s (FWHM) rocking curve value in the unconfined flight samples equals the best value reported terrestrially for this material. The ground samples exhibited a fully developed (111)[110] dislocation mosaic structure, whereas dislocations within the flight samples were discrete and no mosaic structure was evident. The defect density was quantitatively reduced from 75,000 (1 g) to 800 (micro-g) +/-50 percent. Dislocation etch pit density results were confirmed using transmission synchrotron white beam and monochromated beam topography. The low defect density is thought to have resulted from the near absence of hydrostatic pressure, which allowed the molten boule to solidify with little or no wall contact. This minimized the transfer of hoop stresses during solidification and post-solidification processing.

Larson, D. J., Jr.↗

Line Profile of H Lyman (alpha) from Dissociative Excitation of H2 with Application to Jupiter

Observations of the H Lyman(alpha) (Ly-alpha) emission from Jupiter have shown pronounced emissions, exceeding solar fluorescence, in the polar aurora and equatorial "bulge" regions. The H Ly-alpha line profiles from these regions are broader than expected, indicating high-energy processes producing fast atoms as determined from the observed Doppler broadening. Toward understanding that process a high-resolution ultraviolet (UV) spectrometer was employed for the first measurement of the H Ly-alpha emission Doppler profile from dissociative excitation of H2 by electron impact. Analysis of the deconvolved line profile reveals the existence of a narrow central peak of 40 +/- 4 mA full width at half maximum and a broad pedestal base about 240 mA wide. Two distinct dissociation mechanisms account for this Doppler structure. Slow H(2p) atoms characterized by a distribution function with peak energy near 80 meV produce the peak profile, which is nearly independent of the electron impact energy. Slow H(2p) atoms arise from direct dissociation and predissociation of singly excited states which have a dissociation limit of 14.68 eV. The wings of H Ly-alpha arise from dissociative excitation of a series of doubly excited states which cross the Franck-Condon region between 23 and 40 eV. The profile of the wings is dependent on the electron impact energy, and the distribution function of fast H(2p) atoms is therefore dependent on the electron impact energy. The fast atom kinetic energy distribution at 100 eV electron impact energy spans the energy range from 1 to 10 eV with a peak near 4 eV. For impact energies above 23 eV the fast atoms contribute to a slightly asymmetric structure of the line profile. The absolute cross sections of the H Ly-alpha line peak and wings were measured over the range from 0 to 200 eV. Analytic model coefficients are given for the measured cross sections which can be applied to planetary atmosphere auroral and dayglow calculations. The dissociative excitation process, while one contributing process, appears insufficient by itself to explain the line broadening observed at Jupiter.

Ajello, Joseph M.↗

Low Temperature Photoluminescence of PVT Grown ZnSe and ZnSeTe

ZnSe and ZnSeTe single crystals were grown by physical vapor transport (PVT) technique horizontally and vertically. The grown ZnSe and ZnSeTe single crystals were characterized by low temperature photoluminescence at 5 to 10 K using the 3.4 eV emission of an argon laser. The intensity of the sharp near band edge defect lines at 2.799, 2.783 eV and the intrinsic free exciton line at 2.802 eV were mapped on various crystal surfaces with different orientations to the gravitational field. The results show the effects of gravity vector orientation on the defect segregation. Comparison of the photoluminescence spectra of the ZeSe crystal before and after annealing in the Zn vapor shows that the 2.783 eV line of ZnSe crystal is related to the zinc vacancy. The photoluminescence spectra of the ternary ZnSeTe crystal were characterized by a single broad band from 2.2 to 2.4 eV, with a Full Width at Half Maximum (FWHM) of about 100 meV. The temperature dependence of the peak position and intensity were determined from 7 to 150 K.

Wang, Ling Jun↗

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness </= 5 nm on a 5 micrometers x 5 micrometers area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than the crystal substrate. The film quality is determined by measuring the film resistivity, the Hall mobility, carrier densities and the energy band gap. The properties of ZnO films grown of (0001) ZnO and (0001) sapphire substrates will be also compared and discussed in the presentation.

Zhu, Shen↗

Pressure Effect in ZnO Films Using Off-Axis Sputtering Deposition

ZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.

Zhu, Shen↗

Surface Texture and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

Morphology and structure of ZnO films deposited on (0001) sapphire and glass substrates by off-axis sputtering are investigated at various temperatures and pressures. All films show highly textured structures on glass substrates and epitaxial growth on sapphire substrates. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 degrees. In textured films, it rises to several degrees. The trend of surface textures in films grown at low pressures is similar to those grown at high temperatures. A morphology transition from large well-defined hexagonal grains to flat surface was observed at a pressure of 50 mtorr and temperature of 550 C. The experiment results are explained by the transport behavior of depositing species.

Zhu, Shen↗

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

Zhu, Shen↗

Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

Zhu, Shen↗

High Resolution Emission Spectroscopy of the Alpha Pi-1 - Chi Sigma-1(+) Fourth Positive Band System of CO from Electron Impact

We report electron-impact induced fluorescence spectra [300 mA full width at half maximum (FWHM)] of CO for 20 and 100 eV impact energies of the spectral region of 1300 to 2050 A and high resolution spectra (FWHM) of the v'=5 to v"=l and the v'=3 to v"=O bands showing that the rotational structure of the band system are modeled accurately. The excitation function of the (0,1) band (1597 A) was measured from electron impact in the energy range from threshold to 750 eV and placed on an absolute scale from modem calibration standards.

Beegle, Luther W.↗

On-Orbit Calibration of ADEOS OCTS with an AVIRIS Underflight

The Ocean Color Temperature Scanner (OCTS) onboard the Advanced Earth Observation Satellite (ADEOS) was launched on August 17, 1996. Calibration of OCTS is required for use of the on-orbit measured data for retrieval of physical properties of the ocean. In the solar reflected portion of the electromagnetic spectrum, OCTS measures images with nominally 700-m spatial resolution through eight multispectral bands. The objective of this research was to establish the absolute radiometric calibration of OCTS on orbit through an underflight by the Airborne Visible/Infrared Imaging Spectrometer (AVIRIS). AVIRIS is a NASA earth-observing imaging spectrometer designed, built and operated by the Jet Propulsion Laboratory (JPL). AVIRIS acquires data from 20-km altitude on a NASA ER-2 aircraft, above most of the Earth's atmosphere. AVIRIS measures the solar reflected spectrum from 370 nm to 2500 nm through 224 contiguous spectral channels. The full width at half maximum (FWHM) of the spectral channels is nominally 10-nm. AVIRIS spectra are acquired as images of 11 km by up to 800 km extent with 20-m spatial resolution. The high spectral resolution of AVIRIS data allows direct convolution to the spectral response functions of the eight multispectral bands of OCTS. The high spatial resolution of AVIRIS data allows for spatial re-sampling of the data to match the ADEOS sensors spatial resolution. In addition, the AVIRIS high spatial resolution allows assessment of the scaling effects due to environmental factors of thin cirrus clouds, sub-pixel cloud cover, white caps, ocean foam, sun-glint, and bright-target adjacency. The platform navigation information recorded by AVIRIS allows calculation of the position and observation geometry of each spectrum for matching to the OCTS measurement. AVIRIS is rigorously characterized and calibrated in the laboratory prior to and following the flight season. The stability and repeatability of AVIRIS calibration have been validated through an extensive series of inflight calibration experiments. In the OCTS portion of the spectrum, using pre-and post-flight runway calibrations of AVIRIS coupled with the on-board calibrator an absolute calibration accuracy of better than 3% spectral, 2% radiometric and 5% spatial has been achieved. An analogous satellite underflight calibration experiment was performed with AVIRIS and the Optical Sensor (OPS) onboard the Japanese Earth Resources Satellite (JERS).

Green, Robert O.↗

Inflight Validation of AVIRIS Calibration in 1996 and 1997

The Airborne Visible/Infrared Imaging Spectrometer (AVIRIS) measures spectral radiance in the solar reflected spectrum from 400 to 2500 nm. Spectra are measured through 224 spectral channels with nominally 10-nm sampling and 10-nm full width at half maximum (FWHM). From a NASA ER-2 aircraft flying at 20,000 m altitude, these spectra are acquired as images with an 11-km width by up to 800-km length. The spatial sampling is 17 m, and the instantaneous field of view (IFOV) 20 m. The objective of AVIRIS is to acquire calibrated spectra that are used to derive properties of the Earth's land, water, and atmosphere for scientific research and environmental applications. To achieve this objective, the AVIRIS spectra must be calibrated. The AVIRIS sensor is calibrated in the laboratory before and after each flight season, however, the spectra acquired by AVIRIS for science investigators are acquired in the Q-bay of the ER-2 at 20 km altitude. The objective of the AVIRIS inflight calibration experiment is to validate the calibration of AVIRIS spectral images in the low pressure, low temperature operating environment of the ER-2. Inflight calibration experiments have been orchestrated for AVIRIS in every year of flight operations.

Green, Robert O.↗