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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.

42 ENGINEERING↗
DOE OSTI2025

A Study on the Impact of Temperature-Dependent Ferroelectric Switching Behavior in 3D Memory Architecture

The flourishing development of neural networks that require exponentially growing amounts of data has presented an elevated demand for memory footprint. To address this, researchers have been exploring hardware accelerators with innovative memory architectures like 3D memory. These 3D memory architectures offer enhanced storage capacity and processing capabilities, at a cost of rising on-chip temperature during operation. Hafnium Zirconium Oxide (HZO) based Ferroelectric Random Access Memory (FeRAM) is a promising nonvolatile memory candidate in neural network hardware accelerators for its outstanding write performance and reliability. However, its implementation in the architecture regarding the temperature-dependent ferroelectric switching behavior has not been well studied. In this work, we study the thermal impacts on polarization switching through experimental devices and simulation results. We conduct the circuit and architecture-level simulations to showcase that one can exploit this temperature rise to reduce FeRAM's write voltage and write energy due to its unique temperature-activated polarization switching mechanisms. As the on-chip temperature increases to 351K (ambient temperature at 300K) due to neural network workloads, the access energy per bit can be reduced by 27.6% when a dynamic write voltage is applied.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Operando study of HfO 2 atomic layer deposition on partially hydroxylated Si(111)

The introduction of atomic layer deposition (ALD), to the microelectronics industry has introduced a large number of new possible materials able to be deposited in layers with atomic thickness control. One such material is the high-κ oxide HfO 2 ; thermally stable and ultrathin HfO 2 films deposited by ALD are a significant contender to replace SiO 2 as the gate oxide in capacitor applications. We present a mechanistic study of the first deposition cycle of HfO 2 on the Si(111) surface using tetrakis(dimethylamido) hafnium (TDMAHf) and water as precursors using operando ambient pressure x-ray photoelectron spectroscopy. Here, we show that the hydroxylation of the clean Si(111) surface by residual water vapor, resulting in a 0.3 monolayer coverage of hydroxyls, leads to instantaneous full surface coverage of TDMAHf. The change in the atomic ratio of Hf to C/N found during the first deposition half-cycle, however, does not match the assumed immediate ligand loss through reaction with surface hydroxyls. One would expect an immediate loss of ligands, indicated by a Hf:N ratio of approximately 1:3 as TDMAHf deposits onto the surface; however, a Hf:N ratio of 1:3.6 is observed. The partial hydroxylation on the Si(111) surface leads to binding through the TDMAHf ligand N atoms resulting in both N and CH 3 being found remaining on the surface post water half-cycle. Although there is evidence of ligand exchange reactions occurring at Si–OH sites, it also seems that N binding can occur on bare Si, highlighting the complexity of the substrate/precursor reaction even when hydroxyls are present. Moreover, the initial low coverage of Si–OH/Si–H appears to severely limit the amount of Hf deposited, which we hypothesize is due to the specific geometry of the initial arrangement of Si–OH/Si–H on the rest- and adatoms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Electron confinement–induced plasmonic breakdown in metals

Plasmon resonance represents the collective oscillation of free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes plasmonic excitation, wherein plasma frequency exhibits no spatial dispersion. Here, we show conclusive experimental evidence of the breakdown of plasmon resonance and a consequent metal-insulator transition in an ultrathin refractory plasmonic material, hafnium nitride (HfN). Epitaxial HfN thick films exhibit a low-loss and high-quality Drude-like plasmon resonance in the visible spectral range. However, as the film thickness is reduced to nanoscale dimensions, Coulomb interaction among electrons increases because of electron confinement, leading to the spatial dispersion of plasma frequency. With a further decrease in thickness, electrons lose their ability to shield the incident electric field, turning the medium into a dielectric. The observed metal-insulator transition might carry some signatures of Wigner crystallization and indicates that such transdimensional, between 2D and 3D, films can serve as a promising playground to study strongly correlated electron systems.

Science & Technology - Other Topics↗
DOE OSTI2022

Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO 2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. Additionally, the possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Supramolecular assembly of blue and green halide perovskites with near-unity photoluminescence

The metal-halide ionic octahedron is the optoelectronic unit for halide perovskites, and a crown ether–assisted supramolecular assembly approach can pack various ionic octahedra into tunable symmetries. In this work, we demonstrate near-unity photoluminescence quantum yield (PLQY) blue and green emission with the supramolecular assembly of hafnium (Hf) and zirconium (Zr) halide octahedral clusters. (18C6@K) 2 HfBr 6 powders showed blue emission with a near-unity PLQY (96.2%), and green emission was also achieved with (18C6@K) 2 ZrCl 4 Br 2 powders at a PLQY of 82.7%. In conclusion, these highly emissive powders feature facile low-temperature solution-based synthesis conditions and maintain high PLQY in solution-processable semiconductor inks under ambient conditions, and they were used in thin-film displays and emissive three-dimensional–printed architectures that exhibited high spatial resolution.

36 MATERIALS SCIENCE↗
DOE OSTI2025

HfNb_BCC_SolidSolution_128atoms_VASP6

We performed density functional theory (DFT) calculations for body-centered-cubic (BCC) structures with 128 lattices sites of solid solution binary alloys hafnium-niobium (Hf-Nb). The electronic structures of alloys have been calculated using Vienna Ab initio Simulation Package (VASP). Within this package the DFT approach is used to reduce many-body Schrodinger equation to set of single particle Kohn-Sham (KS) equations. The generalized electronic exchange-correlation functional is described by generalized gradient approximation with the Perdew-Burke-Ernzerhof parametrization. The electron-ion interactions is described by pseudopotentials developed within the plane-wave basis projector augmented-wave (PAW) approach. These pseudopotentials are available at the VASP portal (http://cms.mpi.univie.ac.at/vasp/). Our calculations have been run with the pseudopotentials treating s and p semi-core states as valence in case for the elements Hf and Nb. The electronic densities and potentials are expanded over plane-waves with energy cutoff of 350 eV. 2x2x2 k-mesh and normal precision were used. The alloys were modeled by supercell containing 128 randomly distributed atoms. At initial step the atoms occupy perfect BCC lattice cites. This initial structure was optimized until energy changes less than 1e-6 eV, while forces acting on atoms don't exceed 1e-2 eV/angstrom. The electron-ion interaction is described by PAW pseudopotentials. The calculations have been collected by sampling chemical compositions across the entire compositional range. The chemical compositions have been sampled by progressively changing the number of atoms per constituent by 4. For each chemical composition of binaries and ternaries, the first-principle calculations have been run for 100 randomized arrangements of the constituents on the BCC lattice sites. We collected data for a total of 3,029 randomized atomic structures over 31 chemical compositions. Further methodological and structural information is contained in the dataset README.txt file.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Origin and effect of film sub-stoichiometry on ultraviolet, ns-laser damage resistance of hafnia single layers

Understanding the origin of laser damage-prone precursors in high index materials such as hafnia holds the key to the development of laser damage-resistant multilayer dielectric coated optics for high power and energy laser systems. In this study, we investigate the source of sub-stoichiometry, a potent laser damage precursor, in hafnia films produced by an ion beam sputtering (IBS) deposition method and the effect of such defects on the film performance upon ns ultraviolet (UV) laser (8 ns, 355 nm) exposure. Chemical analysis of data obtained via Rutherford backscattering spectroscopy (RBS) suggests that hafnia films deposited at two different planetary locations from the same deposition run exhibit anisotropic and location-dependent stoichiometries. While the oxygen-to-hafnium ratio is at the stoichiometric value of 2 for the hafnia film at the edge location, the ratio is significantly deviated and is 1.7 for that deposited at the planetary center. The sub-stoichiometric hafnia films display a much lower 1-on-1 damage onset at 1.6 ± 0.2 J/cm 2 compared to 2.3 ± 0.2 J/cm 2 in a stoichiometric film. The low damage performance films also have an over three times higher damage density at fluences above initiation. Coupled with Monte Carlo simulations, we reveal that sub-stoichiometry is primarily attributed to preferential removal of oxygen during film deposition by the bombardment of energetic reflected argon neutrals. The resulting oxygen deficiencies create the sub-bandgap states which facilitate the strong laser energy coupling and reduce the resistance to laser-induced damage in the hafnia single layer films.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Emerging applications: Neuromorphic computing and reservoir computing

The emergence of doped hafnium oxide (HfO 2 )-based ferroelectric films has enabled highly scalable and silicon-compatible ferroelectric devices, opening new frontiers in neuromorphic and reservoir computing. Among these, ferroelectric field-effect transistors (FeFETs) are particularly promising due to their analog memory characteristics and unique polarization dynamics. These properties make FeFETs ideal candidates for artificial synapses in neuromorphic architectures, supporting deep neural networks and spiking neural networks based on leaky-integrate-and-fire (LIF) mechanisms. Beyond neuromorphic computing, FeFETs also play a crucial role in physical reservoir computing, leveraging their intrinsic nonlinear and history-dependent behavior for efficient real-time learning. This approach offers significant advantages for time-series processing and edge artificial intelligence (AI) applications, addressing the growing need for energy-efficient computing. As a result, this article explores the principles, key demonstrations, and future potential of FeFET-based neuromorphic and reservoir computing, highlighting their impact on next-generation AI hardware.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on HfI4 by Materials Project

HfI4 is Silicon tetrafluoride-like structured and crystallizes in the cubic Pa-3 space group. The structure is zero-dimensional and consists of eight hafnium iodide molecules. Hf4+ is bonded in a tetrahedral geometry to four I1- atoms. There are one shorter (2.67 Å) and three longer (2.68 Å) Hf–I bond lengths. There are two inequivalent I1- sites. In the first I1- site, I1- is bonded in a single-bond geometry to one Hf4+ atom. In the second I1- site, I1- is bonded in a single-bond geometry to one Hf4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on K10Hf3Mo12PbO48 by Materials Project

HfK10Hf2Mo12PbO48 is Brookite-derived structured and crystallizes in the trigonal R-3 space group. The structure is three-dimensional and consists of three hafnium molecules and one K10Hf2Mo12PbO48 framework. In the K10Hf2Mo12PbO48 framework, there are three inequivalent K1+ sites. In the first K1+ site, K1+ is bonded in a 5-coordinate geometry to five O2- atoms. There are a spread of K–O bond distances ranging from 2.66–2.86 Å. In the second K1+ site, K1+ is bonded in a 9-coordinate geometry to nine O2- atoms. There are a spread of K–O bond distances ranging from 2.86–2.95 Å. In the third K1+ site, K1+ is bonded in a 6-coordinate geometry to six O2- atoms. There are three shorter (2.65 Å) and three longer (3.03 Å) K–O bond lengths. Hf4+ is bonded to six O2- atoms to form HfO6 octahedra that share corners with three equivalent MoO6 octahedra. The corner-sharing octahedral tilt angles are 40°. There are three shorter (2.02 Å) and three longer (2.20 Å) Hf–O bond lengths. There are two inequivalent Mo6+ sites. In the first Mo6+ site, Mo6+ is bonded in a trigonal planar geometry to three O2- atoms. There are a spread of Mo–O bond distances ranging from 1.77–1.85 Å. In the second Mo6+ site, Mo6+ is bonded to six O2- atoms to form distorted MoO6 octahedra that share a cornercorner with one HfO6 octahedra and corners with two equivalent MoO6 octahedra. The corner-sharing octahedra tilt angles range from 40–47°. There are a spread of Mo–O bond distances ranging from 1.94–2.28 Å. Pb2+ is bonded in a distorted octahedral geometry to six equivalent O2- atoms. All Pb–O bond lengths are 2.57 Å. There are eight inequivalent O2- sites. In the first O2- site, O2- is bonded in a 4-coordinate geometry to two K1+, one Hf4+, and one Mo6+ atom. In the second O2- site, O2- is bonded in a distorted trigonal planar geometry to two K1+ and one Mo6+ atom. In the third O2- site, O2- is bonded in a 3-coordinate geometry to one K1+, one Mo6+, and one O2- atom. The O–O bond length is 1.48 Å. In the fourth O2- site, O2- is bonded in a 3-coordinate geometry to one K1+, one Hf4+, and one Mo6+ atom. In the fifth O2- site, O2- is bonded in a 3-coordinate geometry to one K1+, one Mo6+, and one O2- atom. In the sixth O2- site, O2- is bonded in a 3-coordinate geometry to one K1+, one Mo6+, and one Pb2+ atom. In the seventh O2- site, O2- is bonded in a 1-coordinate geometry to one K1+, one Mo6+, and one O2- atom. The O–O bond length is 1.48 Å. In the eighth O2- site, O2- is bonded in a 4-coordinate geometry to one K1+, two equivalent Mo6+, and one O2- atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on HfBr4 by Materials Project

HfBr4 is Silicon tetrafluoride-like structured and crystallizes in the cubic Pa-3 space group. The structure is zero-dimensional and consists of eight hafnium tetrabromide molecules. Hf4+ is bonded in a tetrahedral geometry to four equivalent Br1- atoms. All Hf–Br bond lengths are 2.46 Å. Br1- is bonded in a single-bond geometry to one Hf4+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

TEX-HEU: Integral Experiments with Highly Enriched Uranium and Polyethylene [Slides]

This presentation discusses Thermal/Epithermal eXperiments (TEX) in relation to integral experiments spanning a wide range of fission energy spectra utilizing existing NCSP fissile material assets, TEX-Pu for plutonium, and TEX-HEU highly enriched uranium (HEU) for highly enriched uranium. It also discusses the TEX-HEU design, the use of HEU fuel, and polyethylene parts. The experiment, executed in the Nuclear Criticality Experiment Research Center of the Nevada National Security Site is discussed, specifically how it was assembled on the Comet Universal Critical Assembly Machine. Measured quantities and various critical configurations are listed. In conclusion, the presentation states that they successfully assembled and documented the baseline TEX-HEU experiments, that six critical configurations and one reproducibility measurement were produced, and that they are compiling results to submit to the International Criticality Safety Benchmark Evaluation Project. A future experiment campaign is planned in 2021 with Hafnium as a diluent.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

TEX-HEU Baseline Assemblies: Highly Enriched Uranium Plates with Polyethylene Moderator and Polyethylene Reflector (IER-297 CED-4b Report)

This experiment provides the baseline experimental configurations for TEX-HEU. The purpose of the TEX-HEU design is to provide multiple configurations that span the entire neutron energy spectrum and can be easily modified to incorporate diluent materials. Future experiments utilizing the TEX-HEU design are planned to incorporate hafnium, lithium, and chlorine as diluent materials. Five experimental configurations were judged to be acceptable critical benchmark experiments.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2024

In the Lab with Nuclear Scientists: Critical and Subcritical Assemblies

This presentation talks on the Critical experiments performed on the NCERC machines. Plutonium ( 239 Pu and 240 Pu), Highly Enriched Uranium, Low-Temperature (-40°C). This is all based on a simple design useful for modeling and validation. The design is made to incorporate materials of interest such as Tantalum, hafnium, lithium & more.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Behavior of contaminants and simulant fission products in the advanced chlorination process

The University of Tennessee, Knoxville and Oak Ridge National Laboratory have completed proof-of principle testing on an advanced sulfur-based zirconium and aluminum chlorination process for the recovery of Zr or Al from spent fuel claddings and purification of the products. This process could be used to recover hafnium-free nuclear-grade zirconium for reuse or disposal as low-level waste. Testing showed that even non-optimized reaction protocols could produce zirconium product streams from simulated irradiated fuel with purities >90%. The chlorination process was tested on representative fission product species that would be found in Advanced Test Reactor fuel (ATR). First, fission product generation was determined through modeling and simulation of the ATR. The generation of fission products was used to selected contaminants and potentially volatile fission product simulants for laboratory testing. The goal is to identify which species may react with the sulfur-chlorine reagents and be transported into the advanced chlorination off-gas.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Draft Critical Minerals Evaluation Report: Advanced Materials and Manufacturing Technology

Future energy production by sustainable clean energy technologies will be influenced by the availability and projected supply risks of critical minerals. In this report we discuss this context from the perspective of a sustainable nuclear energy technology and the benefits from the deployment of advanced manufacturing. In the past, the demand of critical minerals in the energy sector was minor, but in recent years renewable energy systems do force a substantial increase in the requirements for critical minerals which further induces pressure on the supply of critical minerals such as chromium, cobalt, nickel, niobium, tantalum, titanium, tungsten, vanadium, and zirconium for nuclear energy technology. The demand of critical minerals for nuclear technology is, besides beryllium and hafnium, minor and less than 1 % of the world supply. This alleviates the negative impact as the nuclear industry may not be able to provide the most compelling priority for the suppliers and to other policymakers looking at the overall needs. In this draft report, detailed background information is provided on the mineralogy of the identified critical minerals, supply chain risks followed by the discussion of specific minerals applicable to material relevant to nuclear energy technology. Briefly, the impact of advanced manufacturing on savings of critical minerals and electric energy is discussed and its effect to nuclear energy technology evaluated. This report will be followed with a final report providing a strategic vision for executable actions to implement the savings through advanced manufacturing, which will be further explored in the upcoming months. The Gen-IV relevant critical minerals will also be evaluated in the context of the AMMT programs material priorities as identified in the material score cards, to determine priorities for future actions. Material savings will become even more substantial when commercial Gen-IV reactor technology becomes available because of their needs for structural materials with higher content in alloying elements for enhanced high-temperature properties and improved corrosion resistance. The requirement for critical minerals in nuclear technology (in kg/MWe) will therefore significantly increase by 2050, even though its contribution to the worldwide electric energy production capacity will remain at about 5 %. The share of nuclear on world’s electric energy production is, on grounds of high utilization and availability 10.2 % and is expected to increase to 12 % by 2050. Advanced manufacturing could aid the deployment of Gen-IV nuclear technology since critical materials savings of up to 30 % seems possible, promoting nuclear energy as a true sustainable clean energy technology together with hydroelectric power.

36 MATERIALS SCIENCE↗
DOE OSTI2023

ATF-2 Ramp Conceptual Design Report

The following report documents the conceptual design for the ATF-2 Ramp experiment. The experiment aims to fill the in-pile irradiation testing gap to conduct integral ramp testing, which was created by the closure of R2, Osiris, and Halden test reactors. The concept involves the simultaneous ramping of three fuel pins using a power axial locator mechanism in the Loop-2A testing facility in the center flux trap of the advanced test reactor (ATR). The three fuel pins are ramped in individual coolant channels containing a prototypic PWR environment. Rod failure will be detected using a fuel rod elongation sensor attached to the fuel pin upper end cap. An axial stack of concentric hafnium and zirconium shrouds will be used to shape the flux around the test pins to create different power levels in each pin and to ensure the peak power location of each pin remains in the center of the test rod. Monte Carlo simulations are used to demonstrate the viability of this design concept.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗