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At least 253 records · Page 14

Optic phonons and anisotropic thermal conductivity in hexagonal Ge 2 Sb 2 Te 5

The lattice thermal conductivity ($κ$) of hexagonal Ge 2 Sb 2 Tesub>5 (h-GST) is studied via direct first-principles calculations. We find significant intrinsic anisotropy of ( $κ$ a /$κ$ c ~2) of $κ$ in bulk h-GST along different transport directions. The dominant contribution to$κ$ is from optic phonons, ~75%. This is extremely unusual as the acoustic phonon modes carry most of the heat in typical semiconductors and insulators with small unit cells. Very recently, Lee et. al. observed anisotropic in GST thin films and attributed this to thermal resistance of amorphous regions near grain boundaries. However, our results suggest an additional strong intrinsic anisotropy for the pure hexagonal phase. This derives from bonding anisotropy along different crystal directions, specifically from weak interlayer coupling, which gives anisotropic phonon dispersions. The phonon spectrum of h-GST has very dispersive optic branches with higher group velocities along the a-axis as compared to flat optic bands along the c-axis. The importance of optic mode contributions for the thermal conductivity in low-$κ$ h-GST is unusual, and development of fundamental physical understanding of these contributions may be critical to better understanding of thermal conduction in other complex layered materials.

36 MATERIALS SCIENCE↗

Reversible oxygen intercalation in hexagonal Y 0.7 Tb 0.3 MnO 3+δ : toward oxygen production by temperature-swing absorption in air

The oxygen storage capacity, structure and thermodynamic stability were studied for hexagonal Y 0.7 Tb 0.3 MnO 3+δ in oxygen and air to assess its applicability for oxygen separation from air by a temperature-swing adsorption process. We show that large amounts of oxygen excess can be reversibly incorporated into and extracted from small particle-size samples of Y 0.7 Tb 0.3 MnO 3+δ prepared by sol–gel synthesis for fixed oxygen partial pressures. The hyperstoichiometric material, with δ ≥ 0.45 prepared in oxygen or high-pressure oxygen atmospheres, assumes a new hexagonal structure with interstitial oxygen defects near the nominally five coordinated Mn site as determined by neutron diffraction and supported by scanning and transmission electron microscopy. Thermogravimetric measurements demonstrate reversible intercalation of oxygen in a pure O 2 atmosphere at around 300 °C, but more importantly, also in air over a remarkably narrow temperature range of ~20 °C, albeit producing smaller oxygen amounts δ ≤ 0.25. Comparison of samples' properties obtained by the sol–gel and solid-state synthesis methods confirms enhanced oxygen storage capacity and oxygen exchange kinetics for the small particle-size samples which exhibit larger specific surface areas. Sequential temperature-swing absorption and long-term annealing experiments demonstrate the high practical potential of Y 0.7 Tb 0.3 MnO 3 compounds for the industrial production of oxygen enriched gases by utilization of waste heat at 250–350 °C.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Polymerization in soft nanoconfinement of lamellar and reverse hexagonal mesophases

This work describes the kinetics of thermal polymerization in nanoconfined domains of lyotropic liquid crystal (LLC) templates by using chemorheological studies at different temperatures. Furthermore, we investigate lamellar and reverse hexagonal LLC phases with the same concentration of the monomeric phase. Results show that the mesophase structures remain intact during thermal polymerization with very slight changes in the domain size. The polymerization rate decreases in the nanoconfined structure compared to the bulk state due to the segregation effect, which increases the local monomer concentration and enhances the termination rate. Additionally, the polymerization rate is faster in the studied reverse hexagonal systems compared to the lamellar ones due to their lower degree of confinement. A higher degree of confinement also induces a lower monomer conversion. Differential scanning calorimetry confirms the obtained results from chemorheology.

36 MATERIALS SCIENCE↗

Hexagonal layered group IV–VI semiconductors and derivatives: fresh blood of the 2D family

New phases of group IV–VI semiconductors in 2D hexagonal structures are predicted and their unusual physical properties are revealed. The structures of monolayer group IV–VI semiconductors are similar to those of blue phosphorene and each unit has the same ten valence electrons. The band gap of 2D hexagonal group IV–VI semiconductors depends on both the thickness and stacking order. Atomic functionalization can induce ferromagnetism, and the Curie temperature can be tuned. Gapped Dirac fermions with zero mass are developed and this makes it exceed that of graphene. Finally, the Fermi velocity can be compared to or even above that of graphene.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Deterministic fabrication of highly reproducible monochromatic quantum emitters in hexagonal boron nitride

Quantum emitters in hexagonal boron nitride are important room temperature single-photon sources. However, conventional fabrication methods yield quantum emitters with dispersed and inconsistent spectral profiles, limiting their potential for practical quantum applications, which demand reproducible high quality single-photon sources. Here, we report the deterministic creation of highly reproducible monochromatic quantum emitters by applying carbon-ion implantation on freestanding hexagonal boron nitride flakes, while a carbon mask with suitable thickness was adapted to optimize the implantation results. Quantum emitters fabricated using this approach exhibited thermally limited monochromaticity, with an emission center wavelength of 590.7 ± 2.7 nm, a narrow full width at half maximum of 7.1 ± 1.7 nm, an emission rate of 1 MHz without optical engineering, and exceptional stability under ambient conditions. Density functional theory calculations and scanning transmission electron microscopy suggest that these emitters are comprised of boron centered carbon tetramers. This method provides a reliable single-photon source for optical quantum computing and potential future industry-scale applications.

Hua, Muchuan [Argonne National Laboratory (ANL), A↗

Hexagonal and pentagonal shapes of self-catalyzed one-dimensional GaAs nanostructures: Shape dependence of the phase evolutions

Hexagonal and pentagonal shapes of one-dimensional (1-D) nanostructures were observed at the growth of GaAs by molecular beam epitaxy method without catalyst aid. We report on the phase evolution dependence on the shapes of 1-D GaAs nanostructures. The hexagonal-shaped nanostructures showed a transition region composed of twin boundaries and stacking faults during the phase transition from a zinc-blende (ZB) structure to a wurtzite (WZ) structure. On the other hand, the pentagonal-shaped nanostructures appeared to have an abrupt transition from a ZB structure to a WZ structure and to be elongated along <112> directions of a ZB structure.

36 MATERIALS SCIENCE↗

Controlled growth and multi-photon luminescence of hexagonal arrays of Au nanoparticles on anodic aluminum oxide templates

Au nanoparticles were deposited onto anodic aluminum oxide (AAO) templates by using a rotating sputtering technique. Interestingly, hexagonal arrays of Au nanoparticles were obtained at an appropriate rotating rate and deposition time. Strong three-photon luminescence was observed from the hexagonally arrayed Au nanoparticles, which is attributed to the strong enhancements of local electromagnetic fields at both excitation and emission wavelengths. Our findings provide a new method to prepare Au nanoparticle arrays with large field enhancements and could have prospective applications in plasmonic nanodevices, such as surface-enhanced Raman scattering substrates, and biosensors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si{sub 3}N{sub 4} intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

K and Mn co-doped BaCd{sub 2}As{sub 2}: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance

A bulk diluted magnetic semiconductor was found in the K and Mn co-doped BaCd{sub 2}As{sub 2} system. Different from recently reported tetragonal ThCr{sub 2}Si{sub 2}-structured II-II-V based (Ba,K)(Zn,Mn){sub 2}As{sub 2}, the Ba{sub 1−y}K{sub y}Cd{sub 2−x}Mn{sub x}As{sub 2} system has a hexagonal CaAl{sub 2}Si{sub 2}-type structure with the Cd{sub 2}As{sub 2} layer forming a honeycomb-like network. The Mn concentration reaches up to x ∼ 0.4. Magnetization measurements show that the samples undergo ferromagnetic transitions with Curie temperature up to 16 K. With low coercive field of less than 10 Oe and large magnetoresistance of about −70%, the hexagonal structured Ba{sub 1−y}K{sub y}Cd{sub 2−x}Mn{sub x}As{sub 2} can be served as a promising candidate for spin manipulations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

36 MATERIALS SCIENCE↗

Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m{sup −1} K{sup −1}, is lower than the bulk basal plane value (390 W m{sup −1} K{sup −1}) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

36 MATERIALS SCIENCE↗

Development and intrinsic properties of hexagonal ferromagnetic (Zr,Ti)Fe{sub 2}

Nanocrystalline Ti{sub 0.75}Zr{sub 0.25}Fe{sub 2+x} (x = 0-0.4) and Ti{sub 0.75−y}B{sub y}Zr{sub 0.25}Fe{sub 2.4} (y = 0-0.35) with high saturation magnetization have been fabricated by the melt-spinning technique. Nanocrystalline Ti{sub 0.75}Zr{sub 0.25}Fe{sub 2+x} consists of the hexagonal C14 Laves phase (Ti,Zr)Fe{sub 2}. Fe addition decreases the lattice parameter a and shrinks the cell volume. The antiferromagnetic Fe-Fe interactions may decrease with the increase of x, leading to a significant enhancement of saturation polarization (J{sub s}) and Curie temperature (T{sub c}). The magnetocrystalline anisotropy constant K also increases with increasing x. Excessive Fe addition (x > 0.25) may induce structural disorder which lowers the J{sub s} and T{sub c}. Nanocrystalline Ti{sub 0.75−y}B{sub y}Zr{sub 0.25}Fe{sub 2.4} is composed of hexagonal (Ti,Zr)Fe{sub 2} and Fe-rich amorphous phases with relatively high J{sub s}. The lattice parameters a, c and cell volume V are almost unchanged with the increase of y for y ≥ 0.16. Simultaneously, the T{sub c} of (Ti,Zr)Fe{sub 2} remains unchanged, indicating that B does not enter this lattice but takes part in forming the amorphous phase, in good agreement with the X-ray diffraction results. The volume fraction of the amorphous phase increases with the increase of B content and results in a large enhancement of J{sub s} up to 10.8 kG. Further B addition (y > 0.30) decreases J{sub s}, possibly due to the decrease of the J{sub s} of the amorphous phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Band gap effects of hexagonal boron nitride using oxygen plasma

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

36 MATERIALS SCIENCE↗

Zonal wavefront estimation using an array of hexagonal grating patterns

Accuracy of Shack-Hartmann type wavefront sensors depends on the shape and layout of the lenslet array that samples the incoming wavefront. It has been shown that an array of gratings followed by a focusing lens provide a substitution for the lensslet array. Taking advantage of the computer generated holography technique, any arbitrary diffraction grating aperture shape, size or pattern can be designed with little penalty for complexity. In the present work, such a holographic technique is implemented to design regular hexagonal grating array to have zero dead space between grating patterns, eliminating the possibility of leakage of wavefront during the estimation of the wavefront. Tessellation of regular hexagonal shape, unlike other commonly used shapes, also reduces the estimation error by incorporating more number of neighboring slope values at an equal separation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural, magnetic, and transport properties of sputtered hexagonal MnNiGa thin films

We report on a systematical study of the structure, magnetism, and magnetotransport behavior of the hexagonal MnNiGa films deposited on thermally oxidized Si (001) substrates by magnetron sputtering. X-ray diffractions reveal that all the films deposited at different temperatures crystallized in hexagonal Ni{sub 2}In-type structure (space group P6{sub 3}/mmc). Scanning electron microscopy observations show that the surface morphology of the films varies with deposition temperature, and energy dispersive spectroscopy analysis shows compositions of the films remain nearly unchanged, independent of the deposition temperature. Magnetic measurements indicate that all films are ferromagnetic and exhibit a magnetic anisotropy behavior. The magnetoresistance (MR) exhibits a negative temperature- and field-dependent behavior. The possible origin of the negative MR is discussed. Furthermore, we found that the Hall effect is dominated by an anomalous Hall effect (AHE) only due to skew scattering independent of the deposition temperature of films. Moreover, the anomalous Hall resistivity presents a non-monotonously temperature-dependent behavior.

36 MATERIALS SCIENCE↗

Nanosecond and ultrafast optical power limiting in luminescent Fe{sub 2}O{sub 3} hexagonal nanomorphotype

Nonlinear optical absorption and optical power limiting properties of Fe{sub 2}O{sub 3} hexagonal nanomorphotype are investigated using open aperture Z-scan technique with the 5 ns and 100 fs laser pulses, at 532 nm and 800 nm excitation domains. At relatively low pulse energies (below 5 μJ), sample shows saturable absorption (SA), but on going to the higher energies an interesting switchover from saturable absorption to effective two photon absorption is observed in both excitation domains. The magnitude of effective two photon absorption coefficients is calculated to be in the range of 10{sup −10} m/W for nanosecond and 10{sup −15} m/W for femtosecond laser pulse energies, respectively. XRD and TEM study reveals the polycrystalline nature, hexagonal morphology, and size of the nanostructure. The luminescence emission property is examined by photoluminescence spectroscopy (PL). It is found that some strange features exist in the luminescence spectra that are consistent with the nanoparticles size distribution. The PL emission lines are explained as originated from various optical band edges due to the size induced quantum confinement and band gap resonant PL absorption/emission behavior of semiconductor nanostructures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Optical properties of GaAs 2D hexagonal and cubic photonic crystal

In this paper we present our theoretical study of 2D hexagonal and cubic rods GaAs in air, with plan wave expansion (PWE) and finite difference time domain (FDTD) by using BandSOLVE and FullWAVE of Rsoft photonic CAD package. In order to investigate the effect of symmetry and radius, we performed calculations of the band structures for both TM and TE polarization, contour and electromagnetic propagation and transmission spectra. Our calculations show that the hexagonal structure gives a largest band gaps compare to cubic one for a same filling factor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Carbon-rich hexagonal (BN)C alloys

Thin films of hexagonal boron nitride carbon, h-(BN){sub 1−x}(C{sub 2}){sub x}, alloys in the C-rich side have been synthesized by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. X-ray diffraction measurements confirmed single hexagonal phase of h-(BN){sub 1−x}(C{sub 2}){sub x} epilayers. Electrical transport and Raman spectroscopy measurements results revealed evidences that homogenous h-(BN){sub 1−x}(C{sub 2}){sub x} alloys with x ≥ 95% can be synthesized by MOCVD at a growth temperature of 1300 °C. The variable temperature Hall-effect measurements suggested that a bandgap opening of about 93 meV with respect to graphite has been obtained for h-(BN){sub 1−x}(C{sub 2}){sub x} with x = 0.95, which is consistent with the expected value deduced from the alloy dependence of the energy gap of homogenous h-(BN){sub 1−x}(C{sub 2}){sub x} alloys. Atomic composition results obtained from x-ray photoelectron spectroscopy measurements revealed that the carrier type in C-rich h-(BN){sub 1−x}(C{sub 2}){sub x} alloys is controlled by the stoichiometry ratio between the B and N via changing the V/III ratio during the growth. The demonstration of bandgap opening and conductivity control in C-rich h-(BN){sub 1−x}(C{sub 2}){sub x} alloys provide feasibilities for realizing technologically significant devices including infrared (IR) emitters and detectors active from near to far IR and multi-spectral IR emitters and detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗