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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Subcooled freon-11 flow boiling in top-heated finned coolant channels with and without a twisted tape

An experimental study was conducted in top-heated finned horizontal tubes to study the effect of enhancement devices on flow boiling heat transfer in coolant channels. The objectives are to examine the variations in both the mean and local (axial and circumferential) heat transfer coefficients for circular coolant channels with spiral finned walls and/or spiral fins with a twisted tape, and improve the data reduction technique of a previous investigator. The working fluid is freon-11 with an inlet temperature of 22.2 C (approximately 21 C subcooling). The coolant channel's exit pressure and mass velocity are 0.19 M Pa (absolute) and 0.21 Mg/sq. ms, respectively. Two tube configurations were examined; i.e., tubes had either 6.52 (small pitch) or 4.0 (large pitch) fins/cm of the circumferential length (26 and 16 fins, respectively). The large pitch fins were also examined with a twisted tape insert. The inside nominal diameter of the copper channels at the root of the fins was 1.0 cm. The results show that by adding enhancement devices, boiling occurs almost simultaneously at all axial locations. The case of spiral fins with large pitch resulted in larger mean (circumferentially averaged) heat transfer coefficients, h sub m, at all axial locations. Finally, when twisted tape is added to the tube with large-pitched fins, the power required for the onset of boiling is reduced at all axial and circumferential locations.

Smith, Alvin↗
DOE OSTI2024

Simultaneous Solid Electrolyte Deposition and Cathode Lithiation for Thin Film Batteries and Lithium Iontronic Devices

Here we show that the deposition of the solid-state electrolyte LiPON onto films of V 2 O 5 leads to their uniform lithiation of up to 2.2 Li per V 2 O 5 , without affecting the Li concentration in the LiPON and its ionic conductivity. Our results indicate that Li incorporation occurs during LiPON deposition, in contrast to earlier mechanisms proposed to explain postdeposition Li transfer between LiPON and LiCoO 2 . We use our discovery to demonstrate symmetric thin film batteries with a capacity of >270 mAh/g, at a rate of 20C, and 1600 cycles with only 8.4% loss in capacity. We also show how autolithiation can simplify fabrication of Li iontronic transistors attractive for emerging neuromorphic computing applications. Our discovery that LiPON deposition results in autolithiation of the underlying insertion oxide has the potential to substantially simplify and enhance the fabrication process for thin film solid state Li ion batteries and emerging lithium iontronic neuromorphic computing devices.

25 ENERGY STORAGE↗
DOE OSTI2022

Negative string tension of a higher-charge Schwinger model via digital quantum simulation

We study some properties of generalized global symmetry for the charge- q Schwinger model in the Hamiltonian formalism, which is the (1 + 1)D quantum electrodynamics with a charge- q Dirac fermion. This model has the |$\mathbb {Z}_q\, 1$| -form symmetry, which is a remnant of the electric |$U(1)\, 1$| -form symmetry in the pure Maxwell theory. It is known that, if we put the theory on closed space, then the Hilbert space is decomposed into q distinct sectors, called universes, and some states with higher energy density do not decay to the ground state due to the selection rule of the 1-form symmetry. Even with open boundaries, we can observe the stability of such states by seeing a negative string tension behavior, meaning that opposite charges repel each other. In order to see negative string tensions, the vacuum angle θ has to be large enough and the standard path-integral Monte Carlo method suffers from the sign problem. We develop a method based on the adiabatic state preparation to see this feature with digital quantum simulation and confirm it using a classical simulator of quantum devices. In particular, we measure the local energy density and see how it jumps between the inside and outside of the insertion of the probe charges. We explicitly see that the energy density inside is lower than that outside. This is a clear signature of the negative string tension.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1975

Catheter-tip force transducer for cardiovascular research

Sensor can be installed in left ventricle by means of procedures available for inserting catheter into an artery at body's extremities and manipulating it through vessel and past aortic valve. Metallic tines of device can be used as internal electrode for electrocardiogram.

Feldstein, C.↗
NASA NTRS1977

Method for fabricating a mass spectrometer inlet leak

A method of fabricating an inlet leak for measuring chemically reactive gases is proposed. The method involves the steps of preparing a selected internal surface of a high melting point metal tubing for sealing to a glass tubing. A portion of the glass tubing is inserted into the prepared portion of the metal tubing, the glass tubing having an outer diameter substantially the same as the inner diameter of the metal tubing. The inserted glass tubing is sealed to the internal surface of the metal tubing; the glass tubing is drawn under a magnifying device to reduce the entire interior diameter thereof to substantially two microns; and an end portion of the drawing glass tubing is broken away.

Harris, R. F.↗
NASA NTRS1986

Investigation of advanced fault insertion and simulator methods

The cooperative agreement partly supported research leading to the open-literature publication cited. Additional efforts under the agreement included research into fault modeling of semiconductor devices. Results of this research are presented in this report which is summarized in the following paragraphs. As a result of the cited research, it appears that semiconductor failure mechanism data is abundant but of little use in developing pin-level device models. Failure mode data on the other hand does exist but is too sparse to be of any statistical use in developing fault models. What is significant in the failure mode data is that, unlike classical logic, MSI and LSI devices do exhibit more than 'stuck-at' and open/short failure modes. Specifically they are dominated by parametric failures and functional anomalies that can include intermittent faults and multiple-pin failures. The report discusses methods of developing composite pin-level models based on extrapolation of semiconductor device failure mechanisms, failure modes, results of temperature stress testing and functional modeling. Limitations of this model particularly with regard to determination of fault detection coverage and latency time measurement are discussed. Indicated research directions are presented.

Dunn, W. R.↗
DOE OSTI2020

MOCVD Growth and Characterization of ZnSnN 2

Since the first few reports of its synthesis in 2011 and 20121-3, interest in ZnSnN 2 for diverse applications, including photovoltaics1,3,4, visible light photocatalysis5, and optoelectronics, has been growing. Novel nitride-based LED device designs promise high gains in efficiency at emission wavelengths into the green, amber and even red.6-8 Their realization requires the precise insertion of an ultrathin layer of ZnGeN 2 or ZnSnN 2 into the active region of an InGaAs-GaAs LED structure. While thin films of ZnSnN 2 have been synthesized by RF sputtering1,9 and by MBE 2,10,11, and thin films of ZnGeN 2 , ZnSiN 2 and their alloys by MOCVD, the synthesis of ZnSnN 2 thin films by MOCVD has not yet been reported. It is a challenging goal, given the narrow temperature window between efficient activation of ammonia and the thermal decomposition of ZnSnN 2 at near-atmospheric pressures. We report here the results of studies of ZnSnN 2 films grown on r- and c-plane sapphire substrates, GaN templates on sapphire, and In 0.15 Ga 0.85 N templates on GaN-on-sapphire, at temperatures from 500 °C to 560 °C, using tetramethyltin (TMSn), diethylzinc (DEZn), germane and ammonia. Chamber pressures were varied between 200 and 500 torr. In addition, the ratios of the cation precursors and the total cation-to-anion precursor ratios were varied. Single crystal growth, as evidenced by 2θ-ω x-ray diffraction scans, was achieved on all of these substrates. Wurtzitic (0002) ZnSnN 2 diffraction were observed at 2θ ~ 32.90 for the samples grown on c-sapphire, GaN (0001) and InGaN (0001) templates, and wurtzitic (11-20) peak at 2θ ~ 54.80 for the films grown on r-sapphire. Higher pressures and higher temperatures promoted better crystallinity and more continuous films, as revealed by scanning electron microscopy (SEM) images and 2θ-ω x-ray diffraction peak widths and intensities. Crystal quality was observed to be highly dependent on growth temperature. For example, in one series a 10 °C change in growth temperature resulting in a factor of 15 increase in diffraction peak intensity. SEM images show that films grown on the GaN templates had better uniformity in nucleation than those grown on sapphire. The presence of satellite peaks around the Bragg peak in the XRD 2θ-ω scan for a film grown on a GaN template, and the absence of satellite peaks for the films grown simultaneously on c- and r-sapphire, also indicate superior quality for the film grown on GaN. HAADF-STEM images of films grown on these templates showed smooth interfaces at the film-substrate boundary and show growth rates as high as 167 nm/h, considerably higher than reported previously for MBE growth.9,10 Electron diffraction patterns show single crystallinity. Rocking curves show FWHM as low as 0.100. RMS surfaces roughnesses, measured by atomic force microscopy, are of the order of 3 nm for 1µm x 1µm areas. Current work is focusing on optimizing growth on InGaN templates. These templates are promising for their relatively lower lattice mismatch with ZnSnN 2 . Their use is a next step toward producing LED device structures.

Jayatunga, Benthara Hewage Dinushi↗
NASA NTRS2022

Silicon Carbide Sensors and Electronics Technology for Extreme Environments: Opportunities for Nuclear Power Applications

Over the past five decades, NASA Glenn Research Center had been advancing the development of single crystal silicon carbide growth, sensors and electronics device technologies, culminating in the recent demonstration of Micro-Electro-Mechanical Systems scale batch fabricated pressure sensors operating at 800 °C and integrated circuit electronics with demonstrated durability of over 1000 hours at 500 °C. As a result of the progress made in demonstrating the high temperature capability of the technology, insertion into actual operational environments, such as in jet engines and planet Venus, are in progress. The high temperature, near inert surface chemistry, and radiation hardness attributes of SiC, coupled with the relative maturation of the device batch microfabrication, contact metallization, and packaging technologies, make the material a prime candidate for use as part of future advanced nuclear reactor instrumentation and control strategy. Hence the current research efforts at NASA Glenn are aimed toward harnessing these attributes in developing SiC sensors and electronics for nuclear reactor applications, potentially for future Lunar/Martian nuclear power and the emerging terrestrial micro nuclear power plants.

silicon carbide↗
DOE OSTI2022

Experimental results of a magnetically coupled piezoelectric actuator to relieve microchannel heat exchanger maldistribution

Refrigerant maldistribution is a common issue in microchannel heat exchangers. Refrigerant maldistribution can have significant negative effects on the heat transfer performance and increase the pressure drop, leading to increased superheat temperature at the outlet and increased compressor work, lowering system efficiency. In this work, a novel piezoelectric-driven magnetic actuator (PEDMA) was fabricated and inserted into the inlet header of the microchannel evaporator, with the goal of improving the non-uniformity of the flow distribution by regulating the flow in the header to the microchannels. Two prototype PEDMA designs were tested and showed significant impact on the refrigerant flow in the region of actuation. In the first design, the experimental data showed superheat reductions up to 9 °C when the individual channel temperatures were measured. The second design redistributed the refrigerant such that a 1% increase in capacity was calculated for the whole heat exchanger without significantly impacting the heating efficiency. The experimental results demonstrate the successful operation of the PEDMA devices and represent a new method of active flow distribution control which is based on a simple design with minimal additional energy consumption, and which can be inserted into microchannel heat exchanger headers to potentially relieve the refrigerant maldistribution.

42 ENGINEERING↗
NASA NTRS2000

Development Approach for the Accommodation of Materials Science Research for the Materials Science Research Facility on the International Space Station

The Materials Science Research Facility (MSRF) is a modular facility comprised of autonomous Materials Science Research Racks (MSRR's) for research in the microgravity environment afforded by the International Space Station (ISS). The initial MSRF concept consists of three Materials Science Research Racks (MSRR-1, MSRR-2, and MSRR-3) which will be developed for a phased deployment beginning on the third Utilization Flight (UF-3). The facility will house materials processing apparatus and common subsystems required for operating each device. Each MSRR is a stand alone autonomous rack and will be comprised of either on-orbit replaceable Experiment Modules, Module Inserts, investigation unique apparatus, and/or multiuser generic processing apparatus. Each MSRR will support a wide range of materials science themes in the NASA research program and will use the ISS Active Rack Isolation System (ARIS). MSRF is being developed for the United States Laboratory Module and will provide the apparatus for satisfying near-term and long-range Materials Science Discipline goals and objectives.

Schaefer, D. A.↗
NASA NTRS2002

First Materials Science Research Facility Rack Capabilities and Design Features

The first Materials Science Research Rack (MSRR-1) is the primary facility for U.S. sponsored materials science research on the International Space Station. MSRR-1 is contained in an International Standard Payload Rack (ISPR) equipped with the Active Rack Isolation System (ARIS) for the best possible microgravity environment. MSRR-1 will accommodate dual Experiment Modules and provide simultaneous on-orbit processing operations capability. The first Experiment Module for the MSRR-1, the Materials Science Laboratory (MSL), is an international cooperative activity between NASA's Marshall Space Flight Center (MSFC) and the European Space Agency's (ESA) European Space Research and Technology Center (ESTEC). The MSL Experiment Module will accommodate several on-orbit exchangeable experiment-specific Module Inserts which provide distinct thermal processing capabilities. Module Inserts currently planned for the MSL are a Quench Module Insert, Low Gradient Furnace, and a Solidification with Quench Furnace. The second Experiment Module for the MSRR-1 configuration is a commercial device supplied by MSFC's Space Products Development (SPD) Group. Transparent furnace assemblies include capabilities for vapor transport processes and annealing of glass fiber preforms. This Experiment Module is replaceable on-orbit. This paper will describe facility capabilities, schedule to flight and research opportunities.

Cobb, S.↗
DOE OSTI2022

Oak Ridge National Laboratory Pilot Demonstration of an Attestation and Anomaly Detection Framework using Distributed Ledger Technology for Power Grid Infrastructure

This report summarizes the design and pilot demonstration of a framework called Grid Guard that was created to provide increased data and device trustworthiness to electric grid devices by leveraging distributed ledger technology (DLT), specifically blockchain. Grid Guard contains a combination of core cryptographic methods such as the secure hash algorithm (SHA), and asymmetric cryptography, private permissioned blockchain, baselining configuration data, consensus algorithm (Raft) and the Hyperledger Fabric (HLF) framework. The system implements a low energy, fast, and robust enhancement to system trustworthiness within and across electric grid systems such as substations, control centers and metering infrastructures. Blockchain is a distributed database structured that provides a practically unalterable (immutable) timeline of stored transactions. By relying on hashing and the Raft consensus algorithm, if an entity tries to illegitimately alter a record at one instance of the database the other ledger nodes are not altered. They work to cross-reference each other and easily locate any incorrectly added data and remove it. The bulk raw data is stored in an off-chain storage (outside of the blockchain ledger) and a hash of this baseline data is stored in the Blockchain ledger via hashing windows of time-series and configuration data, after aggregation and filtering. The bulk off-chain data repository is then considered to be trust-anchored using the hashes stored in the blockchain. To secure the electric grid testbed devices and data, device configuration baselines were compared to those baselines that had been previously stored in the ledger. Statistical baselines for device configurations, network communication patterns, and high-speed sensor data are calculated and then stored off-chain and hashes stored in the ledger. Measurements such as three-phase voltage and current, frequency, breaker status, protection scheme settings, network configuration settings (and other device configuration artifacts) and network traffic features (packet interarrival times) are compared every minute or other selected time windows. During phase 1 of the Grid Guard DLT project different DLT technologies were studies, and an assessment was performed on DLT technology vulnerabilities, uses, and key characteristics. DLT consensus protocols were studies (e.g., RAFT, named after Reliable, Replicated, Redundant, And Fault-Tolerant). Also, cryptography, public, private and permissioned or permissionless systems were assessed. Grid Guard implements a permissioned private DLT. Consensus algorithm selection and choice of DLT implementation depended heavily on the use-case. For this use-case, parameters were selected to measure performance and existing tools for assessment. Benchmarking was performed theoretically and practically. During phase 2 hashed transactions/blocks were inserted into the ledger every second. During phase 2 of the Grid Guard DLT project, a prototype framework was developed and demonstrated for attestation of critical substation devices and data using precision timing systems that use PTP and IRIG-B protocols) on a testbed of operational devices that emulated a distribution substation, control center, and power metering infrastructure using real Operational Technology (OT). The testbed includes OT devices such as protective relays, human machine interfaces (HMI), and power meters. To determine when to collect and compare system and network baselines, an initial examination of an anomaly detection capability to identify malicious manipulation of data streams was conducted. The resulting anomaly detection was demonstrated in a set of experiments and leveraged to trigger device artifact attestation checks. Attestation checks occur against device configuration baselines when compared with the immutable blockchain-stored baselines, which provided a cryptographically supported means by which to store baselines. The electrical substation-grid testbed was created to test the Grid Guard framework. The testbed emulates the operations of a portion of a power grid and SCADA systems as closely as possible. The testbed integrates real protocols, mainly IEC 61850 standard protocols, such as the Sampled Value (SV) and the GOOSE protocols. The testbed also supports DNP3 and other layer 2 and layer 3 protocols such as Telnet, SSH, SFTP/FTP and other proprietary protocols needed to connect to industrial control system equipment. The testbed emulates real power conditions using the OpalRT hardware-in-the-loop (HIL) device which can create fault situations that cannot be easily tested on real systems. The electrical substation-grid testbed was created using real measurement, communication, and protection devices that electrical utilities commonly use.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2013

Acquisition and Retaining Granular Samples via a Rotating Coring Bit

This device takes advantage of the centrifugal forces that are generated when a coring bit is rotated, and a granular sample is entered into the bit while it is spinning, making it adhere to the internal wall of the bit, where it compacts itself into the wall of the bit. The bit can be specially designed to increase the effectiveness of regolith capturing while turning and penetrating the subsurface. The bit teeth can be oriented such that they direct the regolith toward the bit axis during the rotation of the bit. The bit can be designed with an internal flute that directs the regolith upward inside the bit. The use of both the teeth and flute can be implemented in the same bit. The bit can also be designed with an internal spiral into which the various particles wedge. In another implementation, the bit can be designed to collect regolith primarily from a specific depth. For that implementation, the bit can be designed such that when turning one way, the teeth guide the regolith outward of the bit and when turning in the opposite direction, the teeth will guide the regolith inward into the bit internal section. This mechanism can be implemented with or without an internal flute. The device is based on the use of a spinning coring bit (hollow interior) as a means of retaining granular sample, and the acquisition is done by inserting the bit into the subsurface of a regolith, soil, or powder. To demonstrate the concept, a commercial drill and a coring bit were used. The bit was turned and inserted into the soil that was contained in a bucket. While spinning the bit (at speeds of 600 to 700 RPM), the drill was lifted and the soil was retained inside the bit. To prove this point, the drill was turned horizontally, and the acquired soil was still inside the bit. The basic theory behind the process of retaining unconsolidated mass that can be acquired by the centrifugal forces of the bit is determined by noting that in order to stay inside the interior of the bit, the frictional force must be greater than the weight of the sample. The bit can be designed with an internal sleeve to serve as a container for granular samples. This tube-shaped component can be extracted upon completion of the sampling, and the bottom can be capped by placing the bit onto a corklike component. Then, upon removal of the internal tube, the top section can be sealed. The novel features of this device are: center dot A mechanism of acquiring and retaining granular samples using a coring bit without a closed door. center dot An acquisition bit that has internal structure such as a waffle pattern for compartmentalizing or helical internal flute to propel the sample inside the bit and help in acquiring and retaining granular samples. center dot A bit with an internal spiral into which the various particles wedge. center dot A design that provides a method of testing frictional properties of the granular samples and potentially segregating particles based on size and density. A controlled acceleration or deceleration may be used to drop the least-frictional particles or to eventually shear the unconsolidated material near the bit center.

Bar-Cohen, Yoseph↗
NASA NTRS2010

Nanoionics-Based Switches for Radio-Frequency Applications

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Nessel, James↗
NASA NTRS1976

Outline and comparison of the possible effects present in a metal-thin-film-insulator-semiconductor solar cell

The advantages possible with the insertion of a thin-film insulating or semi-insulating layer between a metal and a semiconductor to form the MIS photovoltaic device have been presented previously in the literature. This MIS configuration may be considered as a specific example of a more general class of photovoltaic devices: electrode-thin-film-insulator-semiconductor devices. Since the advantages of the configuration were pointed out, there has been considerable experimental interest in these photovoltaic devices. Because the previous analysis showed that the introduction of the insulator layer could produce several different but advantageous effects, this paper presents a further outline giving a comparison of these effects together with their ramifications.

Fonash, S. J.↗
NASA NTRS2008

A Novel Nanoionics-Based Switch for Microwave Applications

This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic "bridge" to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of approx.0.5dB, isolation of >30dB, low voltage operation (1V), low power (approx. micro-W) and low energy (approx. nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.

Nessel, James A.↗
DOE OSTI2024

Organic Nano-Junctions: Linking Nanomorphology and Charge Transport in Organic Semiconductor Nanoparticles for Organic Photovoltaic Devices

In this study, innovative nanoscale devices are developed to investigate the charge transport in organic semiconductor nanoparticles. Using different steps of lithography techniques and dielectrophoresis, planar organic nano-junctions are fabricated from which hole mobilities are extracted in a space charge-limited current regime. Subsequently, these devices are used to investigate the impact of the composition and morphology of organic semiconductor nanoparticles on the charge mobilities. Pure donor nanoparticles and composite donor:acceptor nanoparticles with different donor compositions in their shell are inserted in the nanogap electrode to form the nano-junctions. The results highlight that the hole mobilities in the composite nanoparticles decrease by two-fold compared to pure donor nanoparticles. However, no significant change between the two kinds of composite nanoparticle morphologies is observed, indicating that conduction pathways for the holes are as efficient for donor proportion in the shell from 40% to 60%. Organic photovoltaic (OPV) devices are fabricated from water-based colloidal inks containing the two composite nanoparticles (P3HT:eh-IDTBR and P3HT:o-IDTBR) and no significant change in the performances is observed in accordance with the mobility results. Through this study, the performance of OPV devices have been successfully correlated to the transport properties of nanoparticles having different morphology via innovative nanoscale devices.

42 ENGINEERING↗
DOE OSTI2020

Semiclassical model for calculating exciton and polaron pair energetics at interfaces

Exciton and polaron pair dissociation is a key functional aspect of photovoltaic devices. To improve upon the current state of interfacial transport models, we augment the existing classical models of dielectric interfaces by incorporating results from ab initio calculations, allowing us to calculate exciton and polaron binding energies more accurately. We demonstrate the predictive capabilities of this new model using two interfaces: (i) the boron subphthalocyanine chloride (SubPc) and C60 interface, which is an archetype for many organic photovoltaic devices; and (ii) pentacene and silicon (1 0 0), which represents a hybrid between organic and inorganic semiconductors. Overall, our calculations predict that the insertion of molecular dipoles at interfaces can be used for improving polaron pair dissociation and that sharp transitions in dielectric permittivity can have a stronger effect on the polaron pair dissociation than even the electron-hole Coulomb interaction.

36 MATERIALS SCIENCE↗