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242 records · Page 14

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DOE OSTI2024

ETROC1: the first full chain precision timing prototype ASIC for CMS MTD endcap timing layer upgrade

We present the design and characterization of the first fullchain precision timing prototype ASIC, named ETL Readout Chipversion 1 (ETROC1) for the CMS MTD endcap timing layer (ETL)upgrade. The ETL utilizes Low Gain Avalanche Diode (LGAD) sensors todetect charged particles, with the goal to achieve a time resolutionof 40–50 ps per hit, and 30–40 ps per track with hits from twodetector layers. The ETROC1 is composed of a 5 × 5 pixelarray and peripheral circuits. The pixel array includes a4 × 4 active pixel array with an H-tree shaped networkdelivering clock and charge injection signals. Each active pixel iscomposed of various components, including a bump pad, a chargeinjection circuit, a pre-amplifier, a discriminator, adigital-to-analog converter, and a time-to-digital converter. Thesecomponents play essential roles as the front-end link in processingLGAD signals and measuring timing-related information. Theperipheral circuits provide clock signals and readoutfunctionalities. The size of the ETROC1 chip is7 mm× 9 mm. ETROC1 has been fabricated in a 65 nmCMOS process, and extensively tested under stimuli of chargeinjection, infrared laser, and proton beam. The time resolution ofbump-bonded ETROC1 + LGAD chipsets reaches 42–46 ps per hit in thebeam test.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2021

Thin-Entrance Window Process for Soft X-Ray Sensors

New free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250 eV to 1.5 KeV. Achieving adequately shallow entrance windows is challenging because the high temperature anneal needed to activate the dopant also drives the dopant profile deeper, growing the region that is insensitive to soft x-rays. A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. The microwave anneal technique can activate dopants at low substrate temperature, with minimal dopant diffusion, and can be used to fabricate both n-type and p-type entrance windows. SRP and SIMS measurements were used to verify dopant activation with negligible dopant diffusion. We then applied the microwave anneal process to a planar sensor wafer, using the new process to create the backside diode contact. Electrical test of the resulting sensors shows good reverse bias characteristics. The sensors have been bump-bonded to a read-out ASIC and used successfully to measure an Fe-55 x-ray spectrum. Process and device simulations were performed to characterize the quantum efficiency of the entrance window for soft x-rays. This technique is useful for other sensor applications requiring a shallow entrance window, including detectors for UV photons, low energy ions and low energy electrons.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

Study of the structure of exploding flat foils at superhigh current density

We have investigated the features produced in flat metal foils as a result of nanosecond explosions and phase transitions at current densities of (0.1–2) • 10 9 A/cm 2 . Thin foils made of aluminum, copper, nickel, and titanium, with thicknesses of 1–15 μm, were tested. Here, the exploded foil structure was studied using X-pinch radiography and laser shadow imaging. Al, Ti, and Cu (5 and 7 μm thick) foils had an initial two-dimensional structure. At the same time, no apparent structure was registered in 1 μm Cu and 5 μm Ni foils. Experiments on generators with different output parameters have shown that the dominant structures that developed in the explosion are either cracks or bubbles and may depend on the orientation of the initial structure in the thin foil with respect to the current direction. In addition, the energy deposited in the foil differs by a factor of about 1.5 for the orthogonal vs parallel current and initial foil structure directions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Calibration sources for the LEGEND-200 experiment

In the search for a monochromatic peak as the signature of neutrinoless double beta decay an excellent energy resolution and an ultra-low background around the Q-value of the decay are essential. The LEGEND-200 experiment performs such a search with high-purity germanium detectors enriched in 76 Ge immersed in liquid argon. To determine and monitor the stability of the energy scale and resolution of the germanium diodes, custom-made, low-neutron emission 228 Th sources are regularly deployed in the vicinity of the crystals. Here we describe the production process of the 17 sources available for installation in the experiment, the measurements of their alpha- and gamma- activities, as well as the determination of the neutron emission rates with a low-background LiI(Eu) detector operated deep underground. With a flux of ( 4.27 ± 0.60 stat ± 0.92 syst ) × 10 -4 n / (kBq·s), approximately one order of magnitude below that of commercial sources, the neutron-induced background rate, mainly from the activation of 76 Ge, is negligible compared to other background sources in LEGEND-200.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Effect of material composition of diamond field emission array cathodes on quality of transversely shaped beams

Diamond field emitter array field emission cathodes (DFEA FECs) are attractive for the next generation of injectors due to their ability to produce transversely shaped beams without the need for complex masking or laser schemes. However, reliability of this cathode technology remains a challenging issue as principal mechanisms guiding and allowing for output beam shaping remained poorly understood. Here, this paper reports the results of testing two DFEA FECs with the same pattern and emitter tip geometry. Although both cathodes were able to sustain gradients of 44 MV/m and produce maximum output integral charge of 0.5 nC per radio frequency pulse, their emission patterns were different. One cathode did not produce a shaped beam, while the other one did. This difference was explained by the extent of the local variations of the diamond material across the arrays as discovered by spatially resolved Raman spectroscopy. The main practical takeaways were (i) tip sharpness was not a prerequisite for producing a shaped beam and instead (ii) material characteristics resulting in different cathode ballast resistance affected emission spatial uniformity across the array and hence the beam shaping.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Surface-binding molecular multipods strengthen the halide perovskite lattice and boost luminescence

Reducing the size of perovskite crystals to confine excitons and passivating surface defects has fueled a significant advance in the luminescence efficiency of perovskite light-emitting diodes (LEDs). However, the persistent gap between the optical limit of electroluminescence efficiency and the photoluminescence efficiency of colloidal perovskite nanocrystals (PeNCs) suggests that defect passivation alone is not sufficient to achieve highly efficient colloidal PeNC-LEDs. Here, we present a materials approach to controlling the dynamic nature of the perovskite surface. Our experimental and theoretical studies reveal that conjugated molecular multipods (CMMs) adsorb onto the perovskite surface by multipodal hydrogen bonding and van der Waals interactions, strengthening the near-surface perovskite lattice and reducing ionic fluctuations which are related to nonradiative recombination. The CMM treatment strengthens the perovskite lattice and suppresses its dynamic disorder, resulting in a near-unity photoluminescence quantum yield of PeNC films and a high external quantum efficiency (26.1%) of PeNC-LED with pure green emission that matches the Rec.2020 color standard for next-generation vivid displays.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Direct comparison of wire, foil, and hybrid X-pinches on a 200 kA, 150 ns current driver

Wire X-pinches (WXPs) have been studied comprehensively as fast (~1 ns pulse width), small (~1 μm) x-ray sources, created by twisting two or more fine wires into an “X” to produce a localized region of extreme magnetic pressure at the cross-point. Recently, two alternatives to the traditional WXP have arisen: the hybrid X-pinch (HXP), composed of two conical electrodes bridged by a thin wire or capillary, and the laser-cut foil X-pinch (LCXP), cut from a thin foil using a laser. We present a comparison of copper wire, hybrid, and laser-cut foil X-pinches on a single experimental platform: UC San Diego’s ~200 kA, 150 ns rise time GenASIS driver. All configurations produced 1–2 ns pulse width, ≤5 μm soft x-ray (Cu L-shell, ~1 keV) sources (resolutions diagnostically limited) with comparable fluxes. WXP results varied with linear mass and wire count, but consistently showed separate pinch and electron-beam-driven sources. LCXPs produced the brightest (~1 MW), smallest (≤5 μm) Cu K-shell sources, and spectroscopic data showed both H-like Cu K α lines indicative of source temperatures ≥2 keV, and cold K α (~8050 eV) characteristic of electron beam generated sources, which were not separately resolved on other diagnostics (within 1–2 ns and ≤200 μm). HXPs produced minimal K-shell emission and reliably single, bright, and small L-shell sources after modifications to shape the early current pulse through them. Benefits and drawbacks for each configuration are discussed to provide potential X-pinch users with the information required to choose the configuration best suited to their needs.

42 ENGINEERING↗