DOE OSTI2016
Silicon Carbide fiber and matrix composite (SiC-SiC) is being considered as a fuel cladding candidate because of its high melting point, low susceptibility to corrosion, good thermal and mechanical shock resistance, and low degradation of mechanical properties under irradiation. The thermal properties of SiC-SiC composite depend heavily on the fabrication process, thus cannot be simply referenced from available database. Similarly, the influence of irradiation on SiC-SiC composite thermal properties needs to be measured to provide general trends of property degradation. For ion irradiated samples, the damaged layer is only a few to a few tens of micrometers. It is impossible to directly measure the bulk property change of a SiC-SiC composite because of the thin, damaged layer. This paper focuses on a methodology that is based on microscale measurement of fiber and matrix properties to determine the overall bulk property change due to ion irradiation. Laser-based photothermal reflectance technique is one of the ideal methods to measure local thermal conductivity and diffusivity with high spatial resolution. The main principle of this technique is to heat the solid sample using an intensity-modulated laser, and scan the sample with a constant intensity continuous-wave (CW) laser to detect the phase lag of the thermal wave propagation. On bulk, isotropic material, if the heating laser intensity is modulated as a sine wave, thermal diffusivity of the sample can be derived from the phase lag, scan distance and modulation frequency in a straight forward manner. By using more specific analytical models, thermal conductivity and diffusivity in complicated cases, such as layered structure materials, composite materials, and/or anisotropic materials, are measurable as well. In this work, a new measurement approach of SiC-SiC composite thermal diffusivity is presented. Due to the micrometer spatial resolution of the photothermal reflectance technique, the measurements are performed locally on fibers along both radial and axial directions, and on the matrix. The influence of Silicon ion irradiation (75 MeV, 10 dpa) is then examined by comparing the experimental results of samples before and after irradiation. (authors)