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Results for “modulation doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Microscopic Theory of Pair Density Waves in Spin-Orbit Coupled Kondo Lattice

We demonstrate that the discommensuration between the Fermi surfaces of a conduction sea and an underlying spin liquid provides a natural mechanism for the spontaneous formation of pair density waves. Using a recent formulation of the Kondo lattice model that incorporates a Yao Lee spin liquid proposed by the authors, we demonstrate that doping away from half filling induces finite-momentum electron-Majorana pair condensation, resulting in amplitude-modulated pair density waves (PDWs). Our approach provides a precise, analytically tractable pathway for understanding the spontaneous formation of PDWs in higher dimensions and offers a natural mechanism for PDW formation in the absence of Zeeman splitting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ultranarrow bandwidth pulses from a regeneratively mode-locked fiber laser

We report on the generation of transform-limited nanosecond pulse with an ultranarrow bandwidth from a regeneratively mode-locked erbium-doped fiber laser. A narrow bandwidth fiber Bragg grating is combined with a bulk amplitude electro-optic modulator to shape pulse evolution inside a ring cavity, and regenerative mode locking is applied to produce a stationary shape of pulses in the nanosecond regime (2.05 ns in duration). Spectral characterization via high bandwidth optoelectronic devices shows that optical pulses have an ultranarrow bandwidth of 220 MHz. Numerical simulation reveals that the shape of the narrow spectral filter has a strong effect on the duration and bandwidth of output pulses.

43 PARTICLE ACCELERATORS↗
NASA NTRS1993

Tetravalent chromium (Cr(4+)) as laser-active ion for tunable solid-state lasers

Major accomplishments under NASA grant NAG-1-1346 are summarized. (1) numerical modeling of the four mirror astigmatically compensated, Z-fold cavity was performed and several design parameters to be used for the construction of a femtosecond forsterite laser were revealed by simulation. (2) femtosecond pulses from a continuous wave mode-locked chromium doped forsterite laser were generated. The forsterite laser was actively mode-locked using an acousto-optic modulator operating at 78 MHz with two Brewster high dispersion glass prisms for intra-cavity chirp compensation. Transform-limited sub-100-fs pulses were routinely generated in the TEM(sub 00) mode with 85 mW of continuous power tunable over 1230-1280 nm. The shortest pulses of 60-fs pulsewidth were measured. (3) Self-mode-locked operation of the Cr:forsterite laser was achieved. Synchronous pumping was used to mode lock the forsterite laser resulting in picosecond pulses, which in turn provided the starting mechanism for self-mode-locking. The pulses generated had an FWHM of 105 fs and were tunable between 1230-1270 nm. (4) Numerical calculations indicated that the pair of SF 14 prisms used in the cavity compensated for quadratic phase but introduced a large cubic phase term. Further calculations of other optical glasses indicated that a pair of SFN 64 prisms can introduce the same amount of quadratic phase as SF 14 prisms but introduce a smaller cubic phase. When the SF 14 prisms were replaced by SFN 64 prisms the pulsewidth was reduced to 50 fs. Great improvement was observed in the stability of the self mode-locked forsterite laser and in the ease of achieving mode locking. Using the same experimental arrangement and a new forsterite crystal with improved FOM the pulse width was reduced to 36 fs.

Seas, A.↗
DOE OSTI2018

Single-walled carbon nanotube tunable mode-locked soliton fibre laser

A soliton fibre laser with a tunable mode-locked output is proposed and demonstrated. The laser is based on a conventional erbium-doped fibre and uses single-walled carbon nanotubes (SWCNTs) as a saturable absorber (SA). Tuning is performed using a tunable Mach – Zehnder filter (TMZF). The SWCNT-based SA has a modulation depth of ∼19.0 % and saturation intensity of 45.3 MW cm{sup −2}. Mode-locking begins at a pump power of 6.0 mW and allows pulsed outputs to be generated from 1550 nm to 1566 nm. The 3 dB bandwidth and pulse duration of the output pulse vary slightly from 6.34 nm to 6.90 nm and from 0.51 ps to 0.56 ps, respectively, which results in the corresponding time-bandwidth product varying from 0.40 to 0.46. The results suggest that the proposed laser would have significance advantages in many applications, particularly spectroscopy and telecommunications. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. Here, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. Our report could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.

42 ENGINEERING↗
DOE OSTI2023

Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K 0.5 Na 0.5 NbO 3 epitaxial thin films with superdomain structures

Size effects of mesoscale ferroelectric domains on the macroscopic dielectric and piezoelectric responses in domain-engineered bulk piezocrystals have been extensively studied for more than two decades. However, less is known about the domain size effects in ferroelectric epitaxial thin films, especially for films consisting of low-symmetry ferroelectric phases and exhibits hierarchical superdomain structures. Herein, using phase-field simulations, we systemically evaluate the effective out-of-plane dielectric and piezoelectric coefficients, κ$^{*}_{33}$ and d$^{*}_{33}$, as a function of the domain periods for two types of superdomain structures in ferroelectric K 0.5 Na 0.5 NbO 3 epitaxial thin films. In one type of the superdomain structures, we find that more than 70% increase of κ$^{*}_{33}$ and nearly 20% increase of d$^{*}_{33}$ can be achieved by tuning the domain period by a few tens of nanometers. Dissimilar behaviors are found when the domain period varies along different lateral directions, suggesting anisotropic domain size effects in thin films. By analyzing the local dielectric and piezoelectric responses from each domain variants and domain walls, we reveal that the domain size effect is governed by the variation of out-of-plane polarization inside the domains. Moreover, we also demonstrate enhanced domain size effects by modulating the misfit strains and temperature to approach the polymorphic phase boundaries, suggesting tunability of the size effect by doping and strain engineering. Furthermore, our results reveal multimodal domain size dependence of dielectric and piezoelectric responses in low-symmetry ferroelectric epitaxial thin films, implying that domain size engineering can be used to tune macroscopic properties of thin-film ferroelectrics, similar to their bulk counterparts.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Selective modulation of electronic transport in VO 2 induced by 10 keV helium ion irradiation

Vanadium dioxide (VO 2 ) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO 2 , as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO 2 films subject to different 10 keV helium ion (He + ) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO 2 /Si vs single crystal Al 2 O 3 ). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO 2 transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Automated Array Assembly, Phase 2

The solar cell module process development activities in the areas of surface preparation are presented. The process step development was carried out on texture etching including the evolution of a conceptual process model for the texturing process; plasma etching; and diffusion studies that focused on doped polymer diffusion sources. Cell processing was carried out to test process steps and a simplified diode solar cell process was developed. Cell processing was also run to fabricate square cells to populate sample minimodules. Module fabrication featured the demonstration of a porcelainized steel glass structure that should exceed the 20 year life goal of the low cost silicon array program. High efficiency cell development was carried out in the development of the tandem junction cell and a modification of the TJC called the front surface field cell. Cell efficiencies in excess of 16 percent at AM1 have been attained with only modest fill factors. The transistor-like model was proposed that fits the cell performance and provides a guideline for future improvements in cell performance.

Carbajal, B. G.↗
DOE OSTI2019

High performance thermoelectric module through isotype bulk heterojunction engineering of skutterudite materials

We demonstrate filled CoSb 3 skutterudite materials with excellent thermoelectric (TE) performance that results in one of the highest reported single stage module efficiency. Here, the improvement in TE material performance was obtained by creating isotype n/n “bulk heterojunction” structure through assembly of novel skutterudite nanocrystals with different Yb-doping content. Combination of significant increase in carrier transport through heterojunction structure and reduction in long-range acoustic phonon transmission by two-phase mixture resulted in enhanced power factor and reduced lattice thermal conductivity. As a result, the figure-of-merit (zT) of heterojunction TE material is improved by more than 35% compared with pristine single homogeneous material. Using these improved TE materials, a high module conversion efficiency of ~9.15% was obtained when operating between 650 °C and 50 °C. This is one of the highest conversion efficiency among the practically measured single stage modules.

42 ENGINEERING↗
DOE OSTI2018

Hidden spin current in doped Mott antiferromagnets

We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum or angular momentum associated with the doped hole. The latter determines a nontrivial ground state degeneracy. By further making superpositions of the degenerate ground states with zero or unidirectional spin currents, we show that different patterns of spatial charge and spin modulations will emerge. Here, such anomaly persists for the odd numbers of holes, but the spin current, ground state degeneracy, and charge/spin modulations completely disappear for even numbers of holes, with the two-hole ground state exhibiting a d-wave symmetry. An understanding of the spin current due to a many-body Berry-like phase and its influence on the momentum distribution of the doped holes will be discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La 1– x Sr x CoO 3–δ Films

Much recent attention has focused on the voltage-driven reversible topotactic transformation between the ferromagnetic metallic perovskite (P) SrCoO 3-δ and oxygen-vacancy-ordered antiferromagnetic insulating brownmillerite (BM) SrCoO 2.5 . This is emerging as a paradigmatic example of the power of electrochemical gating (using, e.g., ionic liquids/gels), the wide modulation of electronic, magnetic, and optical properties generating clear application potential. SrCoO 3 films are challenging with respect to stability, however, and there has been little exploration of alternate compositions. Here, we present the first study of ion-gel-gating-induced P. BM transformations across almost the entire La 1-x SrxCoO 3 phase diagram (0 ≤ x ≤ 0.70), under both tensile and compressive epitaxial strain. Electronic transport, magnetometry, and operando synchrotron X-ray diffraction establish that voltage-induced P → BM transformations are possible at essentially all x, including x ≤ 0.50, where both P and BM phases are highly stable. Under small compressive strain, the transformation threshold voltage decreases from approximately +2.7 V at x = 0 to negligible at x = 0.70. Both larger compressive strain and tensile strain induce further threshold voltage lowering, particularly at low x. The P → BM threshold voltage is thus tunable, via both composition and strain. At x = 0.50, voltage-controlled ferromagnetism, transport, and optical transmittance are then demonstrated, achieving Curie temperature and resistivity modulations of similar to 220 K and at least 5 orders of magnitude, respectively, and enabling estimation of the voltage-dependent Co valence. The results are analyzed in the context of doping- and strain-dependent oxygen vacancy formation energies and diffusion coefficients, establishing that it is thermodynamic factors, not kinetics, that underpin the decrease in the threshold voltage with x, that is, with increasing formal Co valence. These findings substantially advance the practical and mechanistic understanding of this voltage-driven transformation, with fundamental and technological implications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Dynamically tunable moiré exciton Rydberg states in a monolayer semiconductor on twisted bilayer graphene

Moiré excitons are emergent optical excitations in two-dimensional semiconductors with moiré superlattice potentials. Although these excitations have been observed on several platforms, a system with dynamically tunable moiré potential to tailor their properties is yet to be realized. Here we present a continuously tunable moiré potential in monolayer WSe 2 , enabled by its proximity to twisted bilayer graphene (TBG) near the magic angle. By tuning local charge density via gating, TBG provides a spatially varying and dynamically tunable dielectric superlattice for modulation of monolayer WSe 2 exciton wave functions. We observed emergent moiré exciton Rydberg branches with increased energy splitting following doping of TBG due to exciton wave function hybridization between bright and dark Rydberg states. In addition, emergent Rydberg states can probe strongly correlated states in TBG at the magic angle. Finally, our study provides a new platform for engineering moiré excitons and optical accessibility to electronic states with small correlation gaps in TBG.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Abstract Two‐dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin‐film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom–up methods that grow doped samples on substrates directly and top–down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next‐generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

In this paper, we demonstrate that the interfacial dipole associated with bonding across the SrTiO 3 /Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO 3 . The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type II to III. The transferred charge, accompanying built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Modulating the interface dipole to enable electrostatic altering of band alignment opens additional pathways to realize functional behavior in semiconducting hybrid heterojunctions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Design and test of the Mu2e undoped CsI+SiPM crystal calorimeter

The Mu2e experiment at Fermilab will search for the charged-lepton flavour violating neutrino-less conversion of a negative muoninto an electron in the field of an aluminum nucleus. The calorimeter plays an important role in providing a fast trigger filter,excellent particle identification and a seeding for track reconstruction. Its requirements are to provide an energy (timing) resolutionbetter than 10% (0.5 ns) and a position resolution below 1 cm, for 100 MeV electrons. The calorimeter consists of two disks, eachone made of 674 un-doped CsI crystals readout by two large area arrays of 23 UV-extended SiPMs of 66 mm2dimensions.A large scale prototype (Module-0) has been constructed and tested with an electron beam in the energy range between 60 and 120MeV at the BTF of Frascati National Laboratories. Results demonstrated that this calorimeter satisfies the Mu2e requirements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Orienting Strained Interfaces designed to Direct Energy Flow (Final Technical Report)

This proposal aims to establish a transformative paradigm for oxide heterostructures with an exceptionally large number of interfaces designed to direct energy flow through controlled interface orientation, enabling fast ion transport. A primary focus is on unveiling the key role of interfacial strain in oxygen ion migration at low temperatures. The central challenge is to create, understand, utilize self-assembled vertical heteroepitaxial nanostructures with the goal of obtaining and understanding fast ion transport properties by modulating interfacial strain. The specific objectives are: (1) to synthesize multilayer thin films and vertical heteroepitaxial nanostructures with fluorite Gd-doped CeO 2 (GDC) and bixbyite RE 2 O 3 (RE = Y and Sm), (2) to evaluate the interfacial strain states under various temperatures and ambient conditions, (3) to understand the effect of interfacial strain on ionic conductivity of the proposed nanostructures, (4) to understand the three-dimensional (3D) atomic structure of the proposed material design and interface phenomena at the atomic scale.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Xenon doping of liquid argon in ProtoDUNE single phase

The Deep Underground Neutrino Experiment (DUNE) will be the next generation long-baseline neutrino experiment. The far detector is designed as a complex of four LAr-TPC (Liquid Argon Time Projection Chamber) modules with 17 kt of liquid argon each. The development and validation of the first far detector technology is pursued through ProtoDUNE Single Phase (ProtoDUNE-SP), a 770 t LAr-TPC at CERN Neutrino Platform. Crucial in DUNE is the photon detection system that will ensure the trigger of non-beam events — proton decay, supernova neutrino burst and BSM searches — and will improve the timing and calorimetry for neutrino beam events. Doping liquid argon with xenon is a known technique to shift the light emitted by argon (128 nm) to a longer wavelength (178 nm) to ease its detection. The largest xenon doping test ever performed in a LAr-TPC was carried out in ProtoDUNE-SP. From February to May 2020, a gradually increasing amount of xenon was injected to also compensate for the light loss due to air contamination. The response of such a large TPC has been studied using the ProtoDUNE-SP Photon Detection System (PDS) and a dedicated setup installed before the run. With the first it was possible to study the light collection efficiency with respect to the track position, while with the second it was possible to distinguish the xenon light (178 nm) from the LAr light (128 nm). The light shifting mechanism proved to be highly efficient even at small xenon concentrations (<20 ppm in mass) furthermore it allowed recovering the light quenched by pollutants. The light collection improved far from the detection plane, enhancing the photon detector response uniformity along the drift direction and confirming a longer Rayleigh scattering length for 178 nm photons, with respect to 128 nm ones. The charge collection by the TPC was monitored proving that xenon up to 20 ppm does not impact its performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Atomic structure of light-induced efficiency-degrading defects in boron-doped Czochralski silicon solar cells

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime of boron-doped Cz Si decreases upon exposure to light due to B–O-related defects, which reduce the performance of ~10 9 solar modules worldwide. Using electron paramagnetic resonance (EPR), we have identified the spin-active paramagnetic signatures of this phenomenon and gained insights into its microscopic mechanism. We found a distinct defect signature, which diminished when the degraded sample was annealed. The second signature, a broad magnetic field spectrum, due to the unionized B acceptors, was present in the annealed state but vanished upon light exposure. These observations show that, on degradation, nearly all the ~10 16 cm –3 B atoms in Cz Si complexed with interstitial O atoms, whereas only ~10 12 cm –3 of these complexes created defects that were recombination-active. The formation rate of these recombination-active defects correlated with the decay of the minority carrier lifetime. Furthermore, the line shape parameters linked these defects to both B and O impurities in Cz Si.

14 SOLAR ENERGY↗