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At least 253 records · Page 14

Ka-Band GaAs FET Monolithic Power Amplifier Development

Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

Saunier, Paul↗

A Viscoplastic Constitutive Theory for Monolithic Ceramic Materials

With increasing use of ceramic materials in high temperature structural applications such as advanced heat engine components, the need arises to accurately predict thermomechanical behavior. This paper, which is the first of two in a series, will focus on inelastic deformation behavior associated with these service conditions by providing an overview of a viscoplastic constitutive model that accounts for time-dependent hereditary material deformation (e.g., creep, stress relaxation, etc.) in monolithic structural ceramics. Early work in the field of metal plasticity indicated that inelastic deformations are essentially unaffected by hydrostatic stress. This is not the case, however, for ceramic-based material systems, unless the ceramic is fully dense. The theory presented here allows for fully dense material behavior as a limiting case. In addition, ceramic materials exhibit different time-dependent behavior in tension and compression. Thus, inelastic deformation models for ceramics must be constructed in a fashion that admits both sensitivity to hydrostatic stress and differing behavior in tension and compression. A number of constitutive theories for materials that exhibit sensitivity to the hydrostatic component of stress have been proposed that characterize deformation using time-independent classical plasticity as a foundation. However, none of these theories allow different behavior in tension and compression. In addition, these theories are somewhat lacking in that they are unable to capture creep, relaxation, and rate-sensitive phenomena exhibited by ceramic materials at high temperature. When subjected to elevated service temperatures, ceramic materials exhibit complex thermomechanical behavior that is inherently time-dependent, and hereditary in the sense that current behavior depends not only on current conditions, but also on thermo-mechanical history. The objective of this work is to present the formulation of a macroscopic continuum theory that captures these time-dependent phenomena. Specifically, the overview contained in this paper focuses on the multiaxial derivation of the constitutive model, and examines the scalar threshold function and its attending geometrical implications.

Janosik, Lesley A.↗

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗

Electrical and Optical Performance Characteristics of p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in ThermoPhotoVoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A Monolithic Interconnected Module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual Indium Gallium Arsenide (InGaAs) devices series-connected on a single semi-insulating Indium Phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An InfraRed (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74eV InGaAs, have demonstrated V(sub infinity) = 3.2 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. IR reflectance measurements (greater than 2 microns) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗

A monolithic bolometer array suitable for FIRST

The development of arrays of infrared bolometers that are suitable for use in the Far Infrared and Submillimeter Telescope (FIRST) mission is reported. The array architecture is based on the silicon nitride micromesh bolometer currently baselined for use in the case of the Planck mission. This architecture allows each pixel to be efficiently coupled to one or both polarizations and to one or more spatial models of radiation. Micromesh structures are currently being developed, coupled with transistor-edge sensors and read out by a SQUID amplifier. If these devices are successful, then the relatively large cooling power available at 300 mK may enable a SQUID-based multiplexer to be integrated on the same wafer as the array, creating a monolithic, fully multiplexed, 2D array with relatively few connections to the sub-Kelvin stage.

Bock, J. J.↗

Demonstration of an Ultra-Short Channel Metal Monolith Catalytic Reactor for Trace Contaminant Control Applications

The International Space Station (ISS) Trace Contaminant Control Subassembly (TCCS) design is based upon proven, highly reliable technology. However, because its core unit operations rely upon expendable activated charcoal and an indirectly heated high temperature catalyst, annual logistics mass, crew time, and power consumption requirements are significant. To address this situation, a unique catalytic reactor design has been developed which is suitable for retrofit into the TCCS's high temperature catalytic oxidizer (HTCO) assembly. The unique design, which employs a metallic, ultra-short channel length monolith (USCM) catalyst substrate, was tested in a flight-like TCCS HTCO assembly to investigate its performance characteristics. Test results indicate that retrofitting the TCCS with a USCM-based catalytic reactor is feasible and that it may provide significant reductions in logistics mass, crew time, and power consumption. Savings indicated by test results are up to 81% for annual logistics, 56% for crew time, and 77% for startup transient duration. In addition, its demonstrated ability to operate in a power saving mode provides up to a 43% savings in average power consumption. A summary of the USCM demonstration test objectives, approach, results, and specific benefits to the TCCS's process economics are presented,

Perry, J. L↗

The Development of Engineering Tomography for Monolithic and Composite Materials and Components

The research accomplishments under this grant were very extensive in the areas of the development of engineering tomography for monolithic and composite materials and components. Computed tomography was used on graphite composite pins and bushings to find porosity, cracks, and delaminations. It supported the following two programs: Reusable Launch Vehicle (RLV) and Southern Research institute (SRI). Did research using CT and radiography on Nickel based Superalloy dogbones and found density variations and gas shrinkage porosity. Did extensive radiography and CT of PMC composite flywheels and found delamination and non-uniform fiber distribution. This grant supported the Attitude Control Energy Storage Experiment (ACESE) program. Found broken fibers and cracks of outer stainless steel fibers using both radiographic and CT techniques on Pratt and Whitney fuel lines; Supported the Pratt & Whitney and Aging Aircraft engines program. Grant research helped identify and corroborate thickness variations and density differences in a silicon nitride "ROTH" tube using computed tomography.

Hemann, John↗

160-190 GHz Monolithic Low Noise Amplifiers

This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.

Kok, Y. L.↗

High Temperature Oxidation of Boron Nitride: Monolithic Boron Nitride - Part 1

High temperature oxidation of monolithic boron nitride (BN) is examined. Hot pressed BN and both low and high density CVD BN were studied. It is shown that oxidation rates are quite sensitive to microstructural factors such as orientation, porosity, and degree of crystallinity. In addition small amounts of water vapor lead to volatilization of the B2O3 oxide as H(x)B(y)O(z). For these reasons, very different oxidation kinetics were observed for each type of BN.

Jacobson, Nathan↗

From Monolithics to Tethers to Freeflyers: The Spectrum of Large Aperture Sensing from Space

As part of NASA's endeavor to push the envelope and go where we have never been before, the Space Science Enterprise has laid out a vision which includes several missions that revolutionize the collection of scientific data from space. Many of the missions designed to meet the objectives of these programs depend heavily on the ability to perform space-based interferometry, which has recently become a rapidly growing field of investigation for both the scientific and engineering communities. While scientists are faced with the challenges of designing high fidelity optical systems capable of making detailed observations, engineers wrestle with the problem of providing s-pace-based platforms that can permit this data gathering to occur. Observational data gathering is desired at's variety of spectral wavelengths and resolutions, calling for interferometers with a range of baseline requirements. Approaches to configuration design are as varied as the missions themselves from large monolithic spacecraft to multiple free-flying small spacecraft and everything in between. As will be discussed, no one approach provides a 'panacea' of solutions rather each has its place in terms of the mission requirements. The purpose here is to identify the advantages and disadvantages of the various approaches, to discuss the driving factors in design selection and determine the relative range of applicability of each design approach.

Leitner, Jesse↗

Residual Strength Analyses of Monolithic Structures

Finite-element fracture simulation methodology predicts the residual strength of damaged aircraft structures. The methodology uses the critical crack-tip-opening-angle (CTOA) fracture criterion to characterize the fracture behavior of the material. The CTOA fracture criterion assumes that stable crack growth occurs when the crack-tip angle reaches a constant critical value. The use of the CTOA criterion requires an elastic- plastic, finite-element analysis. The critical CTOA value is determined by simulating fracture behavior in laboratory specimens, such as a compact specimen, to obtain the angle that best fits the observed test behavior. The critical CTOA value appears to be independent of loading, crack length, and in-plane dimensions. However, it is a function of material thickness and local crack-front constraint. Modeling the local constraint requires either a three-dimensional analysis or a two-dimensional analysis with an approximation to account for the constraint effects. In recent times as the aircraft industry is leaning towards monolithic structures with the intention of reducing part count and manufacturing cost, there has been a consistent effort at NASA Langley to extend critical CTOA based numerical methodology in the analysis of integrally-stiffened panels.In this regard, a series of fracture tests were conducted on both flat and curved aluminum alloy integrally-stiffened panels. These flat panels were subjected to uniaxial tension and during the test, applied load-crack extension, out-of-plane displacements and local deformations around the crack tip region were measured. Compact and middle-crack tension specimens were tested to determine the critical angle (wc) using three-dimensional code (ZIP3D) and the plane-strain core height (hJ using two-dimensional code (STAGS). These values were then used in the STAGS analysis to predict the fracture behavior of the integrally-stiffened panels. The analyses modeled stable tearing, buckling, and crack branching at the integral stiffener using different values of critical CTOA for different material thicknesses and orientation. Comparisons were made between measured and predicted load-crack extension, out-of-plane displacements and local deformations around the crack tip region. Simultaneously, three-dimensional capabilities to model crack branching and to monitor stable crack growth of multiple cracks in a large thick integrally-stiffened flat panels were implemented in three-dimensional finite element code (ZIP3D) and tested by analyzing the integrally-stiffened panels tested at Alcoa. The residual strength of the panels predicted from STAGS and ZP3D code compared very well with experimental data. In recent times, STAGS software has been updated with new features and now one can have combinations of solid and shell elements in the residual strength analysis of integrally-stiffened panels.

Forth, Scott↗

Monolithic Interconnected Modules (MIMs) for Thermophotovoltaic Energy Conversion

Monolithic Interconnected Modules (MIM) are under development for thermophotovoltaic (TPV) energy conversion applications. MIM devices are typified by series-interconnected photovoltaic cells on a common, semi-insulating substrate and generally include rear-surface infrared (IR) reflectors. The MIM architecture is being implemented in InGaAsSb materials without semi-insulating substrates through the development of alternative isolation methodologies. Motivations for developing the MIM structure include: reduced resistive losses, higher output power density than for systems utilizing front surface spectral control, improved thermal coupling and ultimately higher system efficiency. Numerous design and material changes have been investigated since the introduction of the MIM concept in 1994. These developments as well as the current design strategies are addressed.

Wilt, David↗

Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.

Pugel, D. E.↗

Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.

Pugel, D. E.↗

Auto-Thermal Reforming of Jet-A Fuel over Commercial Monolith Catalysts: MicroReactor Evaluation and Screening Test Results

This paper describes the results of a series of catalyst screening tests conducted with Jet-A fuel under auto-thermal reforming (ATR) process conditions at the research laboratories of SOFCo-EFS Holdings LLC under Glenn Research Center Contract. The primary objective is to identify best available catalysts for future testing at the NASA GRC 10-kW(sub e) reformer test facility. The new GRC reformer-injector test rig construction is due to complete by March 2004. Six commercially available monolithic catalyst materials were initially selected by the NASA/SOFCo team for evaluation and bench scale screening in an existing 0.05 kW(sub e) microreactor test apparatus. The catalyst screening tests performed lasted 70 to 100 hours in duration in order to allow comparison between the different samples over a defined range of ATR process conditions. Aging tests were subsequently performed with the top two ranked catalysts as a more representative evaluation of performance in a commercial aerospace application. The two catalyst aging tests conducted lasting for approximately 600 hours and 1000 hours, respectively.

Yen, Judy C. H.↗

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Wilt, David M.↗

Fracture Toughness in Advanced Monolithic Ceramics - SEPB Versus SEVENB Methods

Fracture toughness of a total of 13 advanced monolithic ceramics including silicon nitrides, silicon carbide, aluminas, and glass ceramic was determined at ambient temperature by using both single edge precracked beam (SEPB) and single edge v-notched beam (SEVNB) methods. Relatively good agreement in fracture toughness between the two methods was observed for advanced ceramics with flat R-curves; whereas, poor agreement in fracture toughness was seen for materials with rising R-curves. The discrepancy in fracture toughness between the two methods was due to stable crack growth with crack closure forces acting in the wake region of cracks even in SEVNB test specimens. The effect of discrepancy in fracture toughness was analyzed in terms of microstructural feature (grain size and shape), toughening exponent, and stable crack growth determined using back-face strain gaging.

Choi, S. R.↗

Monolithic Integrated Radiation Sensor Using Stimulated Luminescence From Alumina

The project goal was to design and test a monolithic integrated device for radiation sensing, using optically stimulated luminescence (OSL) from Al2O3:C. The device would consist of GaN/InGaN-based components epitaxially grown on each side of a A12O3:C substrate. Radiation energy stored in the substrate would be stimulated by visible emission from a GaN light-emitting diode (LED) grown on one side of the device, and the OSL emission from the substrate (in the blue region of the spectrum) would be detected by the InGaN pi-n diode grown on the other side of the substrate. The primary application of the device would be in space radiation environments. Thus, two major research thrusts were launched during this project. Firstly, research at Oklahoma State University (Dr. Stephen W.S. McKeever and Dr. E.G. Yukihara) concentrated on characterization of the OSL properties of Al2O3:C in radiation fields typical of those experienced in low-Earth orbit. Secondly, research at the University of Washington (Co-Is, Dr. T.G. Stoebe and Dr. T. Chen) focused of device development and GaN/InGaN epitaxial growth. While progress in each line of research has been substantial, the ultimate goal (that of producing a working prototype device) has not yet been reached. We detail the research progress and identify outstanding issues in this paper.

McKeever, S. W. S.↗