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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Self-scanned Digicon - A digital image tube for astronomical spectroscopy

We have successfully fabricated, tested, and operated a digital image tube consisting of a magnetically focused image intensifier tube in which a self-scanned linear array of 1024 silicon photodiodes operating in the EBS mode serves as the photoelectron image detector, amplifier, and intermediate image storage device. Integral on-chip MOS shift registers driven by an external clock sequentially interrogate the photodiodes through MOS FET multiplex switch arrays. Each output frame is a sequence of 256 analog pulses on each of four video lines. Laboratory and observing tests show that the output signal is photoelectron shot noise limited over at least a range of 1-100,000 detected photoelectrons per picture element, indicating that single photon detection is achieved. High-resolution astronomical spectroscopy has been carried out in the coude spectrograph of the 2.7-m telescope at McDonald Observatory. Examples are shown.

Tull, R. G.↗
DOE OSTI2020

Measurements of a quantum bulk acoustic resonator using a superconducting qubit

Phonon modes at microwave frequencies can be cooled to their quantum ground state using conventional cryogenic refrigeration, providing a convenient way to study and manipulate quantum states at the single phonon level. Phonons are of particular interest because mechanical deformations can mediate interactions with a wide range of different quantum systems, including solid-state defects, superconducting qubits, and optical photons when using optomechanically active constructs. Phonons, thus, hold promise for quantum-focused applications as diverse as sensing, information processing, and communication. Here, we describe a piezoelectric quantum bulk acoustic resonator (QBAR) with a 4.88 GHz resonant frequency, which, at cryogenic temperatures, displays large electromechanical coupling strength combined with a high intrinsic mechanical quality factor, Q i ≈ 4.3 × 10 4 . Using a recently developed flip-chip technique, we couple this QBAR resonator to a superconducting qubit on a separate die and demonstrate the quantum control of the mechanics in the coupled system. Furthermore, this approach promises a facile and flexible experimental approach to quantum acoustics and hybrid quantum systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Simultaneous on-chip generation of violet, blue, cyan, green, yellow, orange, and red light from an octave-spanning infrared frequency comb

An integrated, multi-spectral visible-light source could significantly benefit technologies such as displays, medical imaging, spectroscopy, visible-light communications, and astrophysics. However, despite recent advances in chip-scale visible lasers, simultaneously generating light of all colors in a single chip has been challenging. Existing solutions are either not suitable for full chip-scale integration, or are fundamentally difficult to scale. Here we demonstrate the simultaneous on-chip generation of infrared, red, orange, yellow, green, cyan, blue, and violet light. Leveraging the low loss, low dispersion, and high density of modes of an adiabatic multimode silicon nitride (SiN) microresonator, we use a single infrared pump of moderate power (~130 mW) to produce an octave-spanning infrared frequency comb that is then converted to different portions of the visible spectrum. We measure non-mode-locked combs and soliton steps corresponding to mode-locked states, making our comb generator suitable for applications that demand either low or high coherence. Since the required pump power is compatible with high-power lasers demonstrated in the same SiN platform, our multi-octave light generator can be fully integrated in a chip-scale form factor. We envision that such a light source will be a catalyst for the development and deployment of miniaturized multi-spectral technologies for quantum systems, medical imaging, displays, and spectroscopy.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Telecommunication-wavelength two-dimensional photonic crystal cavities in a thin single-crystal diamond membrane

We demonstrate two-dimensional photonic crystal cavities operating at telecommunication wavelengths in a single-crystal diamond membrane. We use a high-optical-quality and thin (~300 nm) diamond membrane, supported by a polycrystalline diamond frame, to realize fully suspended two-dimensional photonic crystal cavities with a high theoretical quality factor of ~8 × 10 6 and a relatively small mode volume of ~2(λ/n) 3 . The cavities are fabricated in the membrane using electron-beam lithography and vertical dry etching. We observe cavity resonances over a wide wavelength range spanning the telecommunication O- and S-bands (1360–1470 nm) with Q factors of up to ~1800. Our method paves the way for on-chip diamond nanophotonic applications in the telecommunication-wavelength range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Leveraging Spin-Orbit Coupling in Ge/SiGe Heterostructures for Quantum Information Transfer

Hole spin qubits confined to lithographically - defined lateral quantum dots in Ge/SiGe heterostructures show great promise. On reason for this is the intrinsic spin - orbit coupling that allows all - electric control of the qubit. That same feature can be exploited as a coupling mechanism to coherently link spin qubits to a photon field in a superconducting resonator, which could, in principle, be used as a quantum bus to distribute quantum information. The work reported here advances the knowledge and technology required for such a demonstration. We discuss the device fabrication and characterization of different quantum dot designs and the demonstration of single hole occupation in multiple devices. Superconductor resonators fabricated using an outside vendor were found to have adequate performance and a path toward flip-chip integration with quantum devices is discussed. The results of an optical study exploring aspects of using implanted Ga as quantum memory in a Ge system are presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

On-chip spectrometers using stratified waveguide filters

We present an ultra-compact single-shot spectrometer on silicon platform for sparse spectrum reconstruction. It consists of 32 stratified waveguide filters (SWFs) with diverse transmission spectra for sampling the unknown spectrum of the input signal and a specially designed ultra-compact structure for splitting the incident signal into those 32 filters with low power imbalance. Each SWF has a footprint less than 1 µm × 30,µm, while the 1 × 32 splitter and 32 filters in total occupy an area of about 35 µm × 260 µm, which to the best of our knowledge, is the smallest footprint spectrometer realized on silicon photonic platform. Experimental characteristics of the fabricated spectrometer demonstrate a broad operating bandwidth of 180 nm centered at 1550 nm and narrowband peaks with 0.45 nm Full-Width-Half-Maximum (FWHM) can be clearly resolved. This concept can also be implemented using other material platforms for operation in optical spectral bands of interest for various applications.

42 ENGINEERING↗
NASA NTRS1982

An evaluation of an ICCD imager of dynamic range expansion technique and application of insitu procedures for life-time extension

Research toward practical implementation of the Intensified Charge Coupled Device (ICCD) as a photon-counting array detector for astronomy is reported. The first area of concentration was to determine the rate and extent of the lifetime limiting damage to the CCD caused by the impact of high energy electrons, and to find whether various methods of annealing the damage were productive. The second effort was to determine the performance of the ICCD in a photon-counting mode to produce extended dynamic range measurements. There are two main effects that appear as the practical results of the electron damage to the CCD. One is an increase in the leakage current, i.e., the normal thermal generation of charge carriers in the silicon that provides a background dark signal that adds to the light produced image. In an undamaged CCD, the leakage current is usually fairly uniform across the photosensitive area of the silicon chip, with the exception of various bright pixels which have an anomalous leakage current well above the overall level.

Currie, D. G.↗
NASA NTRS2007

Imaging Spectrometer on a Chip

A proposed visible-light imaging spectrometer on a chip would be based on the concept of a heterostructure comprising multiple layers of silicon-based photodetectors interspersed with long-wavelength-pass optical filters. In a typical application, this heterostructure would be replicated in each pixel of an image-detecting integrated circuit of the active-pixel-sensor type (see figure). The design of the heterostructure would exploit the fact that within the visible portion of the spectrum, the characteristic depth of penetration of photons increases with wavelength. Proceeding from the front toward the back, each successive long-wavelength-pass filter would have a longer cutoff wavelength, and each successive photodetector would be made thicker to enable it to absorb a greater proportion of incident longer-wavelength photons. Incident light would pass through the first photodetector and encounter the first filter, which would reflect light having wavelengths shorter than its cutoff wavelength and pass light of longer wavelengths. A large portion of the incident and reflected shorter-wavelength light would be absorbed in the first photodetector. The light that had passed through the first photodetector/filter pair of layers would pass through the second photodetector and encounter the second filter, which would reflect light having wavelengths shorter than its cutoff wavelength while passing light of longer wavelengths. Thus, most of the light reflected by the second filter would lie in the wavelength band between the cutoff wavelengths of the first and second filters. Thus, further, most of the light absorbed in the second photodetector would lie in this wavelength band. In a similar manner, each successive photodetector would detect, predominantly, light in a successively longer wavelength band bounded by the shorter cutoff wavelength of the preceding filter and the longer cutoff wavelength of the following filter.

Wang, Yu↗
DOE OSTI2023

Novel Cascaded Ring Oscillator Vernier based TDC Architecture with a Feedthrough Reference Oscillator

Time to digital converters (TDCs) are widely used in particle physics and medical imaging to determine the relative arrival time of photons and other particles. Vernier TDCs are one of the most attractive options due to their power consumption efficiency and their small footprint. We present our newly patented innovative architecture of cascaded-stage Vernier TDCs comprised of a feedthrough reference oscillator. This architecture lead to successive Vernier measurements that result in a lower number of cycles for the same dynamic range to resolution ratio (DRRR), leading to reduced conversion time and lower jitter. To validate this architecture, a test chip was designed in 0.18~μm TSMC technology, integrating four types of cascaded Vernier TDCs with an increasing number of stages. The performance of the chip was assessed using a modular test platform specifically designed for TDCs. For comparison purposes, all TDCs were tested with a LSB of 50~ps and a dynamic range of 20~ns. The experimental results demonstrate the highest gain in performance between 1 stage Vernier and 2 stage Vernier TDCs with the precision improved from 36~ps~rms to 21~ps~rms, the maximum number of turns from 110 to 25 counts and the dead time, from 266.4~ns to 76.5~ns, on average. Adding Vernier stages is only relevant for a higher DRRR. Therefore, the 3-stage and 4-stage Vernier TDCs also show performance gains, but improvements are limited.

Scarpellini, Robin↗
DOE OSTI2020

High dynamic range CdTe mixed-mode pixel array detector (MM-PAD) for kilohertz imaging of hard x-rays

A hard x-ray, high-speed, high dynamic range scientific x-ray imager is described. The imager is based on the mixed-mode pixel array detector (MM-PAD) readout chip coupled to a 750 µm thick cadmium telluride (CdTe) sensor. The full imager is a 2 × 3 tiled array of MM-PAD sensor/readout chip hybrids. CdTe improves detection for high energy x-rays as compared to silicon sensors, enabling efficient x-ray imaging to extend to >100 keV. The detector is capable of 1 kHz imaging and in-pixel circuitry has been designed to allow for well depths of greater than 4 × 10 6 80 keV x-rays. Here, a charge integrating front-end allows for quantitative measurement of high flux x-ray images beyond the capabilities of photon counting detectors. Detector performance is summarized and experimental measurements are presented.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2020

Beating absorption in solid-state high harmonics

Since the new millennium coherent extreme ultra-violet and soft x-ray radiation has revolutionized the understanding of dynamical physical, chemical and biological systems at the electron’s natural timescale. Unfortunately, coherent laser-based upconversion of infrared photons to vacuum-ultraviolet and soft x-ray high-order harmonics in gaseous, liquid and solid targets is notoriously inefficient. In dense nonlinear media, the limiting factor is strong re-absorption of the generated high-energy photons. Here we overcome this limitation by generating high-order harmonics from a periodic array of thin one-dimensional crystalline silicon ridge waveguides. Adding vacuum gaps between the ridges avoids the high absorption loss of the bulk and results in a ~ 100-fold increase of the extraction depth. As the grating period is varied, each high harmonic shows a different and marked modulation, indicating their waveguiding in the vacuum slots with reduced absorption. Looking ahead, our results enable bright on-chip coherent short-wavelength sources and may extend the usable spectral range of traditional nonlinear crystals to their absorption windows. Potential applications include on-chip chemically-sensitive spectro-nanoscopy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

GRAPH — an readout ASIC for large MCP based detectors

We present a programmable 16 channel, mixed signal, low power readout ASIC, having the project historically named Gigasample Recorder of Analog waveforms from a PHotodetector (GRAPH). It is designed to read large aperture single photon imaging detectors using micro channel plates for charge multiplication, and measuring the detector's response on crossed strips anodes to extrapolate the incoming photon position. Each channel consists of a fast, low power and low noise charge sensitive amplifier, which provides a myriad of coarse and fine programmable options for gain and shaping settings. Further, the amplified signal is recorded using, to our knowledge novel, the Hybrid Universal sampLing Architecture (HULA) ADC. A kind of mixed signal double buffer memory, that enables concurrent waveform recording, and selected event digitized data extraction. The sampling frequency is freely adjustable between few kHz up to 125 MHz, while the chip's internal digital memory holds a history 2048 samples for each channel, with a digital headroom of 12 bits. An optimized region of interest sample-read algorithm allows to extract the information just around the event pulse peak, while selecting the next event, thus substantially reducing the operational dead time. The chip is designed in 130 nm TSMC CMOS technology, and its power consumption is around 47 mW per channel.

47 OTHER INSTRUMENTATION↗
NASA NTRS1990

Sub-electron noise charge coupled devices

A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed.

Chandler, Charles E.↗
NASA NTRS2014

A Highly Sensitive Multi-Element HgCdTe E-APD Detector for IPDA Lidar Applications

An HgCdTe electron avalanche photodiode (e-APD) detector has been developed for lidar receivers, one application of which is integrated path differential absorption lidar measurements of such atmospheric trace gases as CO2 and CH4. The HgCdTe APD has a wide, visible to mid-wave-infrared, spectral response, high dynamic range, substantially improved sensitivity, and an expected improvement in operational lifetime. A demonstration sensor-chip assembly consisting of a 4.3 lm cutoff HgCdTe 4 9 4 APD detector array with 80 micrometer pitch pixels and a custom complementary metal-oxide-semiconductor readout integrated circuit was developed. For one typical array the APD gain was 654 at 12 V with corresponding gain normalized dark currents ranging from 1.2 fA to 3.2 fA. The 4 9 4 detector system was characterized at 77 K with a 1.55 micrometer wavelength, 1 microsecond wide, laser pulse. The measured unit gain detector photon conversion efficiency was 91.1%. At 11 V bias the mean measured APD gain at 77 K was 307.8 with sigma/mean uniformity of 1.23%. The average, noise-bandwidth normalized, system noise-equivalent power (NEP) was 1.04 fW/Hz(exp 1/2) with a sigma/mean of 3.8%. The measured, electronics-limited, bandwidth of 6.8 MHz was more than adequate for 1 microsecond pulse detection. The system had an NEP (3 MHz) of 0.4 fW/Hz(exp 1/2) at 12 V APD bias and a linear dynamic range close to 1000. A gain-independent quantum-limited SNR of 80% of full theoretical was indicative of a gain-independent excess noise factor very close to 1.0 and the expected APD mode quantum efficiency.

NEP↗
DOE OSTI2025

Spin Decoherence Dynamics of Er 3+ in CeO 2 Films

Developing telecom-compatible spin-photon interfaces is essential towards scalable quantum networks. Erbium ions (Er 3+ ) exhibit a unique combination of a telecom (1.5 mu m) optical transition and an effective spin-1=2 ground state, but identifying a host that enables heterogeneous device integration while preserving long optical and spin coherence remains an open challenge. In this work, we explore the potential of Er 3+ :CeO 2 films on silicon and study the Er 3+ spin coherence, offering low nuclear spin density and the potential for on-chip integration. We demonstrate a 38.8 mu s spin coherence, which can be extended to 176.4 mu s with dynamical decoupling. Pairing experiments with cluster correlation expansion calculations, we identify spectral diffusion induced by bath Er 3+ spin flip-flops as the dominant decoherence mechanism and provide pathways to millisecond-scale coherence.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond

Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specific integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifiers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verified using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.

Fredenburg, Jeff↗
DOE OSTI2024

A 32-Channel Cryo-CMOS ASIC for SNSPD Biasing and Readout with Picosecond Timing

Superconducting nanowire single-photon detectors (SNSPD) are a promising technology for particle detection. Although SNSPDs have demonstrated picosecond timing accuracy, scaling up large arrays has proved challenging. In this work, we introduce a 32-channel cryo-CMOS application-specifc integrated circuit (ASIC) that can be tightly integrated with SNSPD arrays. The ASIC is designed to operate at a temperature of 4K and can perform up to 32 simultaneous timing measurements with a root-mean-square (RMS) accuracy of 8.0ps. The ASIC includes on-chip circuitry for externally biasing superconducting devices, low-noise amplifers for reading superconducting devices, high-resolution time-to-digital converters (TDC) for time-tagging events, and serializers for transmitting data to room-temperature electronics. The ASIC is manufactured in a 22nm FDSOI process and occupies an area of 4.0mm x 1.0mm. The performance of the ASIC was verifed using custom cryogenic device models internally developed for the 22nm SOI process. Measurement results will be presented at the conference.

Fredenburg, Jeff↗
DOE OSTI2020

Design of a multichannel photonic crystal dielectric laser accelerator

To be useful for most scientific and medical applications, compact particle accelerators will require much higher average current than enabled by current architectures. For this purpose, we propose a photonic crystal architecture for a dielectric laser accelerator, referred to as a multi-input multi-output silicon accelerator (MIMOSA), that enables simultaneous acceleration of multiple electron beams, increasing the total electron throughput by at least 1 order of magnitude. To achieve this, we show that the photonic crystal must support a mode at the Γ point in reciprocal space, with a normalized frequency equal to the normalized speed of the phase-matched electron. We show that the figure of merit of the MIMOSA can be inferred from the eigenmodes of the corresponding infinitely periodic structure, which provides a powerful approach to design such devices. Additionally, we extend the MIMOSA architecture to electron deflectors and other electron manipulation functionalities. These additional functionalities, combined with the increased electron throughput of these devices, permit all-optical on-chip manipulation of electron beams in a fully integrated architecture compatible with current fabrication technologies, which opens the way to unconventional electron beam shaping, imaging, and radiation generation.

43 PARTICLE ACCELERATORS↗