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At least 253 records · Page 14

Strongly temperature dependent ferroelectric switching in AlN, Al 1-x Sc x N, and Al 1-x B x N thin films

This manuscript reports the temperature dependence of ferroelectric switching in Al 0.84 Sc 0.16 N, Al 0.93 B 0.07 N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Furthermore, over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.

36 MATERIALS SCIENCE↗

Nematic Order, Plasmonic Switching and Self-Patterning of Colloidal Gold Bipyramids

Dispersing inorganic colloidal nanoparticles within nematic liquid crystals provides a versatile platform both for forming new soft matter phases and for predefining physical behavior through mesoscale molecular-colloidal self-organization. However, owing to formation of particle-induced singular defects and complex elasticity-mediated interactions, this approach has been implemented mainly just for colloidal nanorods and nanoplatelets, limiting its potential technological utility. Here, orientationally ordered nematic colloidal dispersions are reported of pentagonal gold bipyramids that exhibit narrow but controlled polarization-dependent surface plasmon resonance spectra and facile electric switching. Bipyramids tend to orient with their C 5 rotation symmetry axes along the nematic director, exhibiting spatially homogeneous density within aligned samples. Topological solitons, like heliknotons, allow for spatial reorganization of these nanoparticles according to elastic free energy density within their micrometer-scale structures. With the nanoparticle orientations slaved to the nematic director and being switched by low voltages ≈1 V within a fraction of a second, these plasmonic composite materials are of interest for technological uses like color filters and plasmonic polarizers, as well as may lead to the development of unusual nematic phases, like pentatic liquid crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electric and magnetic field observations during a substorm of 24 February 1970

A series of electric field measurements is reported which was obtained from the Injun 5 satellite along with a simultaneous magnetic disturbance observed in the interplanetary medium and on the ground during a magnetic substorm. The substorm analyzed took place on February 24, 1970. Prior to the onset of the substorm a greatly enhanced anti-sunward plasma flow was observed over the polar cap. The enhanced plasma flow occurred about 30 minutes after a switch in the direction of the interplanetary magnetic field from northward to southward. The electric fields across the polar cap immediately before and during the substorm were essentially unchanged indicating that an enhancement in the ionospheric conductivity rather than the electric field must be responsible for the large increase in the auroral electrojet current during the substorm.

Gurnett, D. A.↗

Electric and magnetic field observations during a substorm on February 24, 1970

Description of a series of electric field measurements obtained from the Injun 5 satellite and simultaneous magnetic disturbances observed in the interplanetary medium and on the ground during a magnetic substorm. The substorm analyzed took place on Feb. 24, 1970. Prior to the onset of the substorm, a greatly enhanced antisunward plasma flow was observed over the polar cap. The enhanced plasma flow occurred about 30 minutes after a switch in the direction of the interplanetary magnetic field from northward to southward. The electric fields across the polar cap immediately before and during the substorm were essentially unchanged, and it is thus indicated that an enhancement in the ionospheric conductivity rather than the electric field must be responsible for the large increase in the auroral electrojet current during the substorm.

Gurnett, D. A.↗

Twisted bilayer graphene: topological pumping and switching of topology by current [Slides]

The presentation was prepared for a BLABS seminar and includes various graphical images. The summary given highlighted: Topological pumping can be triggered by interlayer sliding in TBG due to the nontrivial topology associated with the synthetic dimension; Time-reversal symmetry of TBG can be spontaneously broken by Coulomb interaction, that results in the valley-polarized QAH state at 3/4 filling; A large enough current can pump electrons from the valence band to conductance band, that redistributes the electron occupation; and, the redistribution of electron occupation combined with the Coulomb interaction can switch the valley polarization and topology.

36 MATERIALS SCIENCE↗

Rain measurement results derived from a two polarization S-band radar employing frequency diversity at Wallops Island, Virginia

A dual polarization meteorological radar is described. It operates with a slow switch having a cycle time of 0.7 sec and incorporates a frequency diversity technique to achieve independent sampling over short intervals of time. Rain rate measurements derived from the dual polarization radar and low and high resolution rain gages located at a remote site are compared. Average percent differences in rainfall of < 5% and 16% are demonstrated when comparing the dual polarization radar measurements with the low and high resolution rain gages, respectively. Striking correlations of the rain rates are present during one rain day. The rain measurement cases examined were limited to only light rain rates (<7 mm/hr).

Goldhirsh, J.↗

Rain measurement results derived from a two-polarization frequency-diversity S-band radar at Wallops Island, Virginia

A dual polarization meteorological radar is described. It operates with a slow switch having a cycle time of 0.7 sec and incorporates a frequency diversity technique to achieve independent sampling over short intervals of time. Rain rate measurements derived from the dual polarization radar and low and high resolution rain gages located at a remote site are compared. Average percent differences in rainfall of less than 5 percent and 16 percent are demonstrated when comparing the dual polarization radar measurements with the low and high resolution rain gages, respectively. Striking correlations of the rain rates are present during one rain day. The rain measurement cases examined were limited to only light rain rates (less than 7 mm/hr).

Goldhirsh, Julius↗

Diode pumped, regenerative Nd:YAG ring amplifier for space application

The study reviews the research and development of a prototype laser used to study one possible method of short-pulse production and amplification, in particular, a pulsed Nd:YAG ring laser pumped by laser diode arrays and injected seeded by a 100-ps source. The diode array pumped, regenerative amplifier consists of only five optical elements, two mirrors, one thin film polarizer, one Nd:YAG crystal, and one pockels cell. The pockels cell performed both as a Q-switch and a cavity dumper for amplified pulse ejection through the thin film polarizer. The total optical efficiency was low principally due to the low gain provided by the 2-bar pumped laser head. After comparison with a computer model, a real seed threshold of about 10 exp -15 J was achieved because only about 0.1 percent of the injected energy mode-matched with the ring.

Coyle, D. B.↗

Optical control of topological memory based on orbital magnetization

Under suitable conditions, some twisted graphene multilayers and transition-metal dichalcogenides become Chern insulators, exhibiting the anomalous quantum Hall effect and orbital magnetization due to spontaneous valley polarization. We study the interaction of a Chern insulator with circularly polarized light. Here, the interaction energy contains an antisymmetric term that couples to the helicity of incident light. For a two-band Chern insulator, this term is expressed as an integral involving the Berry curvature of the system. Taking advantage of this interaction, we propose an experimental protocol for switching topological memory based on orbital magnetization by circularly polarized light. Moreover, two laser beams of opposite circular polarization can nucleate domains of opposite magnetization and thus produce an optically configurable domain wall carrying topologically protected chiral edge modes.

36 MATERIALS SCIENCE↗

Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO 3 Film

A ferroelectric domain wall memory device exploits the presence (or absence) of domain walls as the basis for information storage. Although structural defects strongly influence ferroelectric domain wall nucleation and growth, this correlation is far from being fully understood. For example, a single defect can play opposing roles: it can act as a nucleation site to initiate domain switching or, conversely, serve as a pinning center inhibiting domain wall motion. This is particularly the case for antiphase boundaries (APBs), whose influence on switching remains relatively unexplored despite being ubiquitous in oxide perovskite ferroelectrics. Here, we use aberration-corrected scanning transmission microscopy and in situ transmission electron microscopy under an applied bias to extensively characterize the influence of an APB on the switching behavior in a (110)-oriented BiFeO 3 thin film. We demonstrate that deterministic nucleation occurs in the proximity of a vertically oriented APB, following which domain growth occurs laterally in a symmetric fashion. Atomic-scale structural analysis reveals that the shear operation vector for the APB is 1/2[110]; this half-unit-cell shift extends over a few nanometers, implying that the APB plane is inclined toward the imaging direction. The symmetric switching observation is attributed to local inhomogeneous lattice strain and a reduction of polarization caused by the APB. These results demonstrate that an extended structural defect can be used as an active switching element rather than a stumbling block in reprogrammable domain-wall-based devices. Ultimately, this will expand the capabilities of ferroelectric thin films for future electronic devices based on ferroelectric domain walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co] N

Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co] N , which are either highly textured on single crystalline MgO substrates or randomly textured on SiO 2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.

42 ENGINEERING↗

Proximity ferroelectricity in wurtzite heterostructures

Proximity ferroelectricity is an interface-associated phenomenon in electric-field-driven polarization reversal in a non-ferroelectric polar material induced by one or more adjacent ferroelectric materials. Here, in this paper, we report proximity ferroelectricity in wurtzite ferroelectric heterostructures. In the present case, the non-ferroelectric layers are AlN and ZnO, whereas the ferroelectric layers are Al 1−x B x N, Al 1−x Sc x N and Zn 1−x Mg x O. The layered structures include nitride–nitride, oxide–oxide and nitride–oxide stacks that feature two-layer (asymmetric) and three-layer (symmetric) configurations. Ferroelectric switching in both layers is validated by multimodal characterization methods, including polarization hysteresis, anisotropic chemical etching, second harmonic generation, piezo response force microscopy, electromechanical testing and atomic resolution polarization orientation imaging in real space by scanning transmission electron microscopy. We present a physical switching model in which antipolar nuclei originate in the ferroelectric layer and propagate towards the internal non-ferroelectric interface. The domain wall leading edge produces elastic and electric fields that extend beyond the interface at close proximity, reducing the switching barrier in the non-ferroelectric layer, and allowing complete domain propagation without breakdown. Density functional theory calculations of polymorph energies, reversal barriers and domain wall energies support this model. Proximity ferroelectricity enables polarization reversal in wurtzites without the chemical or structural disorder that accompanies elemental substitution, opening new questions and opportunities regarding interface-based ferroelectricity.

36 MATERIALS SCIENCE↗

Robust and symmetric magnetic field dependency of superconducting diode effect in asymmetric Dirac semimetal SQUIDs

The recent demonstration of the superconducting diode effect (SDE) has generated renewed interest in superconducting electronics, in which devices such as compact superconducting diodes that can perform signal rectification with low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd 3 As 2 thin film grown by the molecular beam epitaxy technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of −10 and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.

Current-voltage characteristic↗

Atmospheric, climatic and environmental research

Research conducted during the past year in the climate and atmospheric modeling programs was focused on the development of appropriate atmospheric and upper ocean models, and preliminary applications of these models. Prinicpal models are a one-dimensional radiative-convection model, a three-dimensional global climate model, and an upper ocean model. Principal application is the study of the impact of CO2, aerosols and the solar constant on climate. Also the performance of the International Satellite Cloud Climatology Project cloud detection algorithm was evaluated, concentrating initially on its application to geosynchronous data, with an eventual switch of the developed methodologies to data from polar orbiting satellites. In the process, a number of improvements were made, in particular: an improved technique for tracking small scale day to day variability in clear sky continental temperatures; a number of techniques for the statistical assessment of cloud detection uncertainties due to cloud types which are spatially and temporally invariant; and a method used to detect those cloudy regions which have long term spatial and temporal stability.

Broecker, W. S.↗

Switching the spin cycloid in BiFeO3 with an electric field

Abstract Bismuth ferrite (BiFeO 3 ) is a multiferroic material that exhibits both ferroelectricity and canted antiferromagnetism at room temperature, making it a unique candidate in the development of electric-field controllable magnetic devices. The magnetic moments in BiFeO 3 are arranged into a spin cycloid, resulting in unique magnetic properties which are tied to the ferroelectric order. Previous understanding of this coupling has relied on average, mesoscale measurements. Using nitrogen vacancy-based diamond magnetometry, we observe the magnetic spin cycloid structure of BiFeO 3 in real space. This structure is magnetoelectrically coupled through symmetry to the ferroelectric polarization and this relationship is maintained through electric field switching. Through a combination of in-plane and out-of-plane electrical switching, coupled with ab initio studies, we have discovered that the epitaxy from the substrate imposes a magnetoelastic anisotropy on the spin cycloid, which establishes preferred cycloid propagation directions. The energy landscape of the cycloid is shaped by both the ferroelectric degree of freedom and strain-induced anisotropy, restricting the spin spiral propagation vector to changes to specific switching events.

36 MATERIALS SCIENCE↗

Phase Switching as the Origin of Large Piezoelectric Response in Organic-Inorganic Perovskites: A First-Principles Study

Piezoelectrics are critical functional components of many practical applications such as sensors, ultrasonic transducers, actuators, medical imaging, telecommunications. So far, the best performing piezoelectrics are ferroelectric ceramics, many of which are toxic, heavy, hard, and cost-ineffective. Recently, a groundbreaking discovery of extraordinarily large piezoelectric coefficients in the family of organic-inorganic perovskites gave a hope for a cheaper, environmentally friendly, inexpensive, light-weight and flexible alternative. However, the origin of such response in organic-inorganic ferroelectrics whose spontaneous polarization is an order of magnitude smaller than for inorganic counterparts remains unclear. In this study we employ first-principles simulations to predict that the mechanism associated with large piezoelectric constants is of extrinsic origin and associated with switching between the stable phase and previously overlooked energetically competitive metastable phase that can be stabilized by the external stress. Here, the phase switching changes the polarization direction and, therefore, gives origin to large piezoelectric response, similar to PbZr$_{1-x}$Ti$_x$O$_3$ near morphotropic phase boundary. Existence of such metastable phases is likely to manifest as the dynamical molecular disorder above the Curie temperature and, therefore, could be intrinsic to the entire family of organic-inorganic ferroelectrics with such disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Comparison of Dead-Time Effects in a WPT System Inverter for Different Fixed-Frequency Modulation Techniques

In this paper, a comparative study of the dead-time effects in a wireless power transfer (WPT) system inverter is performed for different fixed-frequency control techniques. The dead-time is provided between the complementary switching instances of the inverter phase-legs to ensure safe operation of the input power source. Under certain operating conditions, the dead-time results in waveform distortions or voltage-polarity reversal (VPR) at the inverter output. The VPR affects the switching characteristics, harmonic spectrum, switching losses, and output voltage/power of the system. A detailed analysis of the dead-time effect on the WPT system parameters such as output voltage and output power is conducted for the different fixed-frequency control strategies (i.e., traditional phase-shift control, asymmetrical clamped-mode, and asymmetrical duty-cycle control). Furthermore, the impact of dead-time on the inverter switching losses is compared for the different control strategies.

Kavimandan, Utkarsh↗

Towards computational polar-topotronics: Multiscale neural-network quantum molecular dynamics simulations of polar vortex states in SrTiO3/PbTiO3 nanowires

Recent discoveries of polar topological structures ( e.g ., skyrmions and merons) in ferroelectric/paraelectric heterostructures have opened a new field of polar topotronics. However, how complex interplay of photoexcitation, electric field and mechanical strain controls these topological structures remains elusive. To address this challenge, we have developed a computational approach at the nexus of machine learning and first-principles simulations. Our multiscale neural-network quantum molecular dynamics molecular mechanics approach achieves orders-of-magnitude faster computation, while maintaining quantum-mechanical accuracy for atoms within the region of interest. This approach has enabled us to investigate the dynamics of vortex states formed in PbTiO 3 nanowires embedded in SrTiO 3 . We find topological switching of these vortex states to topologically trivial, uniformly polarized states using electric field and trivial domain-wall states using shear strain. These results, along with our earlier results on optical control of polar topology, suggest an exciting new avenue toward opto-electro-mechanical control of ultrafast, ultralow-power polar topotronic devices.

Linker, Thomas↗