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Results for “polycrystalline structure”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Thermoelastic micromechanical stresses associated with a large alpha-silicon carbide grain in a polycrystalline beta-silicon carbide matrix

The thermoelastic micromechanical stresses associated with a single large hexagonal alpha-SiC grain within a fine-grain-size cubic (3C) beta-SiC matrix were calculated. The naturally occurring residual stresses which are created during cooling from the processing temperatures and the effects of superimposed applied external stresses are both considered. A significant effect of the shape or geometry of the alpha-SiC grain is revealed, with the largest residual stresses associated with the naturally occurring tabular or platelet structure. The stresses are compared with the published strength results for these materials, which suggests that the residual stresses assume a significant role in the strength reduction that is observed.

Li, Zhuang↗
NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗
NASA NTRS1995

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

This report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriented crystalline ZnSe films on (100) single crystal GaAs substrates were grown by MOCVD. In particular, ZnSe films were grown by reacting a zinc adduct with hydrogen selenide at temperatures in the range of 200 C to 400 C. X-ray diffraction studies and images obtained with an atomic force microscope determined that the films were highly oriented but were polycrystalline. Particular emphasis was placed on the use of a substrate temperature of 350 C. Using iodine as a dopant, n-type ZnSe films with resistivities in the range of .01 to .05 ohm-cm were grown on semi-insulating GaAs. Thus procedures have been developed for investigating the utility of n-type ZnSe window layers on n/p GaAs structures. Studies of recombination at n-ZnSe/n-GaAs interfaces in n-ZnSe/n-GaAs/p-GaAs cell structures are planned for future work.

Olsen, Larry C.↗
DOE OSTI2025

Etching-assisted upcycling of Ni-lean to Ni-rich cathode materials

Upcycling is recognized as a sustainable recycling approach for spent lithium-ion batteries. However, existing upcycling methods typically involve intricate pretreatment or post-treatment steps, complicating their practical application. Here, in this study, we propose a straightforward, etching-assisted upcycling method that effectively transforms polycrystalline Ni-lean cathodes into high-performance single crystal Ni-rich cathodes. During the etching step, nickel acetate was dissolved into acetic acid and then polycrystalline NMC111 are etched in the solution. Finally, polycrystalline NMC111 are converted into single crystal particles coated with amorphous nickel acetate. This significantly enhances elemental diffusion during subsequent sintering by minimizing both particle size and the contact distance between NMC111 and nickel acetate. As elemental diffusion is improved and acetate ions decompose completely during sintering, the process requires neither additional pretreatment nor post-treatment. The resulting cathode materials (Etched-UP622) exhibit superior structural and electrochemical properties compared to the Control622, achieving an energy density of 719.7 Wh/kg, approximately 56.7 mAh/g higher than Control622 and 125.5 Wh/kg higher than NMC111. Etched-UP622 also delivers higher discharge capacity, improved rate performance and cycling stability, surpassing Control622 and NMC111. Meanwhile, NMC811 also can be synthesized by the proposed strategy, and the discharge capacity can reach 166.9 mAh/g at 1C, similar to 14 mAh/g higher than Control811. Overall, this etching-assisted strategy simplifies the upcycling process and offers a scalable, sustainable route for producing high-quality cathode materials.

Acid etching↗
DOE OSTI2024

Polymorphism of Pb 5 (PO 4 ) 3 OH δ within the LK-99 mixture

During the synthetic exploration targeting the polycrystalline compound LK-99, an unexpected phase, Pb 5 (PO 4 ) 3 OH δ , was identified as a byproduct. We elucidated the composition of this compound through single-crystal X-ray diffraction analysis. Subsequent synthesis of the target compounds was achieved via high-temperature solid-state pellet reactions. The newly identified Pb 5 (PO 4 ) 3 OH δ has an orthorhombic crystal structure with space group Pnma , representing a unique structure differing from the hexagonal apatite phases of Pb 10 (PO 4 ) 6 O and Pb 5 (PO 4 ) 3 OH. Comprehensive temperature- and magnetic-field-dependent magnetization studies unveiled a temperature-independent magnetic characteristic of Pb 5 (PO 4 ) 3 OH δ . Solid-state nuclear magnetic resonance spectroscopy was employed to decipher the origins of the phase stability and confirm the presence of hydrogen atoms in Pb 5 (PO 4 ) 3 OH δ . These investigations revealed the presence of protonated oxygen sites, in addition to the interstitial water molecules within the structure, which may play critical roles in stabilizing the orthorhombic phase.

Xu, Mingyu (ORCID:0000000171386009)↗
NASA NTRS2005

New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

Evans, Laura J.↗
NASA NTRS1993

An experimental investigation of fatigue damage in aluminum 2024-T3 alloys

Aluminum alloys are finding increasing use in the aerospace and automobile industries due to their attractive low density-high modulus and low density-high strength characteristics. Unfortunately, cyclic stress-strain deformation alters the microstructure of the material. These structural changes can lead to fatigue damage and ultimately service failure. Therefore, in order to assess the integrity of the alloy, a correlation between fatigue damage and a measurable microstructural property is needed. Aluminum 2024-T3, a commonly used commercial alloy, contains many grains (individual crystals) of various orientations. The sizes and orientations of these grains are known to affect the strength, hardness, and magnetic permeability of polycrystalline alloys and metals; therefore, perhaps a relationship between a grain property and the fatigue state can be established. Tension-compression cycling in aluminum alloys can also induce changes in their dislocation densities. These changes can be studied from measurements of the electrical resistivities of the materials. Consequently, the goals of this investigation were: to study the grain orientation of aluminum 2024-T3 and to seek a correlation between the grain orientation and the fatigue state of the material; and to measure the electrical resistivities of fatigued samples of aluminum 2024-T3 and to interpret the findings.

Ferguson, Milton W.↗
DOE OSTI2026

Modeling Single-Crystal Battery Materials: From Fundamental Understanding to Performance Evaluation

The performance of rechargeable batteries is fundamentally influenced by the physicochemical properties and microstructural features of their key material components. Recent experimental advancements have highlighted the potential of single-crystal (SC) morphologies to address inherent limitations of polycrystalline (PC) electrodes and solid-state electrolytes, offering tunable charge transport kinetics and improved cell cycling performance. Here, this review examines how state-of-the-art computational modeling, from atomistic and mesoscale to continuum-level approaches, including machine learning methodologies, has been utilized to investigate the critical factors governing the electrochemical behavior of SC battery materials. We explore how predictive modeling can elucidate the processing–structure–property–performance relationships of SC cathodes, anodes, and solid-state electrolytes, with a focus on unique SC characteristics such as crystallographic anisotropy, size effects, and facet-dependent properties. Additionally, we identify limitations in commonly used modeling techniques and discuss strategies to address these challenges. By integrating high-fidelity simulations with experimental insights, this review aims to outline a clear path for the rational design and optimization of SC battery components, paving the way for accelerated advancements in energy storage technologies.

Materials science↗
DOE OSTI2025

Cleavable quaternary oxychlorides with high magnetic ordering temperatures

Quaternary oxychlorides derived from Ruddlesden–Popper 3d transition metal oxides offer a route to cleavable crystals with bulk antiferromagnetic ordering temperatures reaching at least 550 K. Here, we study the magnetic, optical, and mechanical behavior of Sr 2 FeO 3 Cl, Ca 2 FeO 3 Cl, Ca 3 Fe 2 O 5 Cl 2 , and Sr 3 Fe 2 O 5 Cl 2 . Through optical absorption measurements, we show that these antiferromagnetic semiconductors have optical band gaps of ≈2.1(1) eV. The magnetic ordering symmetries and temperatures were probed by neutron powder diffraction and Mössbauer spectroscopy on polycrystalline samples, demonstrating Néel temperatures (T N ) near room temperature in the single layer Sr 2 FeO 3 Cl (T N ≈ 311 K) and Ca 2 FeO 3 Cl (T N ≈ 360 K), and the double-layer compound Sr 3 Fe 2 O 5 Cl 2 has T N ≈ 545 K. The high-spin moments of Fe 3+ lie within the basal plane and the magnetic structures are compensated within each magnetic layer and characterized by magnetic propagation vectors k = ($\frac{1}{2}$ $\frac{1}{2}$ 0). Magnetization results demonstrate the quasi-2D nature of the magnetism, with a broad maximum in the susceptibility near 2T N for Sr 2 FeO 3 Cl. Scotch tape tests and mechanical exfoliation onto SiO 2 confirm the micaceous nature of these crystals with cleavage down to a single unit cell (two magnetic layers) achieved for Sr 3 Fe 2 O 5 Cl 2 . In conclusion, this paper highlights strong antiferromagnetic interactions, semiconducting band gaps, and cleavability of quaternary Fe-based oxychlorides and motivates future work on crystals and exfoliated flakes of these and related oxyhalide systems.

36 MATERIALS SCIENCE↗
DOE OSTI2025

X-ray diffraction strains in laser-ablated aluminum, nickel, sodium, and invar: Pressures to 475 GPa

Dynamically compressed materials in longitudinal waves are described by two physical models: hydrostatic pressure, with equal, normal, principal stresses or material uniaxially strained in the wave propagation direction. These models are disparate, so experimental comparisons and evaluations are important. Polycrystalline material in a state of hydrostatic pressure will have no eccentricity of x-ray-diffracted Debye–Scherrer rings. A general three-dimensional solution of Bragg diffracted x rays based on principal crystallographic strains in the compression wave was found. The distortion of x-ray diffraction beams has been used for strain measurements; the analysis developed incorporates a strained reciprocal lattice and the incident x-ray beam. Strain-distorted Polanyi surfaces form an annulus of compression with an ellipsoid of revolution in reciprocal space, which is intersected by Ewald's sphere for Bragg diffraction. The in situ measurements for strain describe nanosecond diffraction evaluated using two planes, (hkl) and (h′k′l′), both in the same crystallographic phase. Diffraction from Al, Ni, Na, and Invar quantifies the compression axial strains in these materials: The compression axial ratios are 0.65, 1.05, 0.88, and 1.58 at pressures of 291, 402, 409, and 367 GPa for the respective materials. Crystal structure transformations with homogeneous pressurized stresses, mandating equal normal strains, should not be anticipated to agree with heterogeneous, uniaxially strained, and sheared crystalline phases. Measurements support in-plane strains increasing with pressure, p , in fcc and hcp aluminum as ε 22 = −0.21 p /TPa.

Alloys↗
DOE OSTI2024

Tuning the spontaneous exchange bias effect in La 1.5 Sr 0.5 CoMnO 6 with sintering temperature

Here, in this study, we present a study of the influence of microstructure on the magnetic properties of polycrystalline samples of the La 1.5 Sr 0.5 CoMnO 6 double perovskite, with primary attention to the spontaneous exchange bias effect, a fascinating recently discovered phenomena for which some materials exhibit unidirectional magnetic anisotropy after being cooled in zero magnetic fields. By sintering La 1.5 Sr 0.5 CoMnO 6 at different temperatures, we obtained samples with distinct average grain sizes, ranging from 1.54-6.65 μm. A detailed investigation of the material's structural, morphologic, electronic, and magnetic properties using x-ray powder diffraction, powder neutron diffraction, x-ray absorption near edge structure spectroscopy, scanning electron microscopy, and ac and dc magnetometry has revealed a systematic enhancement of the exchange bias effect with increasing the average grain size. This evolution is discussed in terms of changes in the material's porosity and grain morphology and its influence on the exchange couplings at the magnetic interfaces.

14 SOLAR ENERGY↗
NASA NTRS1981

Rate of H2 formation on amorphous grains

The rate of formation of molecular hydrogen from hydrogen atoms adsorbed on amorphous grains taken to represent interstellar dust grains is analyzed. Following a brief review of the structure and thermodynamics of amorphous grains and the evidence that interstellar grains are indeed amorphous, consideration is given to the mechanism of formation of H2 molecules by the impact of H atoms on grains with adsorbed H atoms, and it is concluded that on amorphous grains, molecule formation will only occur if H atoms are adsorbed within a distance on the order of 10 A of each other. Rates of H2 formation on single crystal and polycrystalline grains are then calculated and compared with those for amorphous grains, and it is shown that, except for certain temperatures and high H atom densities, the rates of H2 formation on polycrystalline and amorphous grains are up to a few orders of magnitude lower than on single crystals. The results suggest that amorphous grains will lead to H2 clouds with irregular and sharply delineated features in contrast to the more uniform clouds formed on crystalline grains.

Smoluchowski, R.↗
DOE OSTI2025

High-Throughput In-Line Deposition of Silicon Oxide for Polycrystalline Silicon Passivating Contacts

Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiO x /poly-Si(n) structure with an implied open-circuit voltage (iV oc = 726 mV) and contact saturation current density (J 0 = 8.8 fA/cm 2 ). Furthermore, annealing AIDA SiO x films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO 2 , improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.

TOPcon↗
DOE OSTI2025

Development of Polycrystalline Photoelectrodes with Optimum Compositions and Morphologies for Solar Fuel Production via Electrochemical Synthesis (Final Technical Report)

Photoelectrochemical cells (PECs) can utilize solar energy for water splitting to produce H 2 as a clean fuel. The most critical components of a water-splitting PEC are semiconductor electrodes (photoelectrodes) that absorb solar energy to generate photoexcited charge carriers and transport them to the electrode/electrolyte interface for water reduction and oxidation reactions. While efficient PEC hydrogen production has been successfully demonstrated on the laboratory scale, the commercial viability of PECs depends critically on the cost of H 2 produced by the PECs, which is affected by the cost of PEC construction. Therefore, identifying promising inexpensive semiconductor electrodes is important. The goal of this project was to bring an advancement in the synthesis and understanding of inexpensive polycrystalline photoelectrodes based on oxides. Oxide-based semiconductors are inexpensive, easy to fabricate, and relatively more stable in aqueous media compared to other types of semiconductors. This project developed new electrodeposition methods to produce a variety of oxide-based semiconductor electrodes with precisely controlled compositions and morphologies to enhance photon absorption, electron-hole separation, and the use of electrons and holes for desired chemical reactions. The resulting high-quality photoelectrodes were investigated to establish the structure-composition-morphology-photoelectrochemical property relationships to identify the advantages and limitations of each oxide semiconductor system.

14 SOLAR ENERGY↗
NASA NTRS2002

CARES/Life Used for Probabilistic Characterization of MEMS Pressure Sensor Membranes

Microelectromechanical systems (MEMS) devices are typically made from brittle materials such as silicon using traditional semiconductor manufacturing techniques. They can be etched (or micromachined) from larger structures or can be built up with material deposition processes. Maintaining dimensional control and consistent mechanical properties is considerably more difficult for MEMS because feature size is on the micrometer scale. Therefore, the application of probabilistic design methodology becomes necessary for MEMS. This was demonstrated at the NASA Glenn Research Center and Case Western Reserve University in an investigation that used the NASA-developed CARES/Life brittle material design program to study the probabilistic fracture strength behavior of single-crystal SiC, polycrystalline SiC, and amorphous Si3N4 pressurized 1-mm-square thin-film diaphragms. These materials are of interest because of their superior high-temperature characteristics, which are desirable for harsh environment applications such as turbine engine and rocket propulsion system hot sections.

Nemeth, Noel N.↗
DOE OSTI2026

Simplex‐based model for nanoparticle grain identification in four‐dimensional scanning transmission electron microscopy data

Grain identification in polycrystalline nanoparticles, for example, determining which crystal phases are present at each spatial location, is fundamental to materials characterisation. This is particularly challenging when grains overlap extensively, as commonly occurs in four-dimensional scanning transmission electron microscopy (4D-STEM) datasets. We propose a simplex-based model (SBM) in which each simplex vertex represents the diffraction pattern (DP) of a pure grain, and the simplex edges and interior represent overlapping grains. Our SBM grain identification algorithm operates on the Bragg disk (BD) data matrix distilled from the 4D-STEM data to identify the grain membership at each scan position, together with a BD feature matrix whose columns represent the DPs for each constituent grain, which is important for identifying the crystal structure of each grain. We solve the model using a two-stage algorithm. In Stage 1, we adapt a linear mixing algorithm to estimate an initial BD feature matrix whose columns represent DPs of potentially overlapping grains. Our Stage 2 algorithm incorporates sparsity considerations to transform the initial BD feature matrix so that its columns represent DPs of pure grains. Using simulated datasets with various grain configurations, we demonstrate that SBM recovers both the BD feature matrix and membership maps more accurately than existing methods, even when a grain lacks any pure region and completely overlaps with other grains.

4D-STEM segmentation↗
NASA NTRS1972

Shielded silicon gate complementary MOS integrated circuit.

An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. N-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special field plate over certain transistors. The threshold voltages obtained on an oriented silicon substrate ranged from 1.5 to 3 V for either channel. Integrated inverters performed satisfactorily from 3 to 15 V, limited at the low end by the threshold voltages and at the high end by the drain breakdown voltage of the n-channel transistors. The stability of the new structure with an n-doped silicon gate as measured by the shift in C-V curve under 200 C plus or minus 20 V temperature-bias conditions was better than conventional aluminum gate or p-doped silicon gate devices, presumably due to the doping of gate oxide with phosphorous.

Lin, H. C.↗
DOE OSTI2025

Ultrafast Oxygen Conduction in Sillén Oxychlorides

Oxygen ion conductors are crucial for enhancing the efficiency of various clean energy technologies, including fuel cells, solid oxide air batteries, electrolyzers, membranes, sensors, and more. In this study, a structure-similarity analysis of ≈62k oxygen-containing compounds identified the MBi 2 O 4 X (M = rare-earth element, X = halogen element) family as promising candidates for fast oxygen transport. Among these, LaBi 2 O 4 Cl is found as an ultrafast oxygen conductor with an ultralow migration barrier of 0.1 eV based on ab initio studies. Its 2D layered structure, featuring a “triple fluorite” layer, supports diffusion of both oxygen vacancies and interstitials. In addition to vacancy diffusion with a 0.1 eV barrier, ab initio studies show interstitial diffusion exhibits a modest barrier of 0.6–0.8 eV. Frenkel pairs are found to be the dominant defects in intrinsic LaBi 2 O 4 Cl, facilitating significant vacancy-mediated oxygen diffusion at elevated temperatures. With 2.8% oxygen vacancies, LaBi 2 O 4 Cl is predicted to achieve a conductivity of 0.3 S/cm at 25 °C in a single crystal. Experimental synthesis and characterization of polycrystalline LaBi 2 O 4 Cl and Sr-doped LaBi 2 O 4 Cl revealed conductivity exceeding that of YSZ and LSGM below 400 °C, with lower activation energies, achieving a total conductivity of 0.1−0.2 mS/cm at 300 °C. Here, while these results confirm its potential of fast oxygen transport, we suggest further experimental optimization of LaBi 2 O 4 Cl, including aliovalent doping and microstructure refinement, could significantly enhance its performance, facilitating fast oxygen conduction approaching room temperature.

Defects↗