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At least 253 records · Page 14

High-Efficiency K-Band Space Traveling-Wave Tube Amplifier for Near-Earth High Data Rate Communications

The RF performance of a new K-Band helix conduction cooled traveling-wave tube amplifier (TWTA), is presented in this paper. A total of three such units were manufactured, tested and delivered. The first unit is currently flying onboard NASA's Lunar Reconnaissance Orbiter (LRO) spacecraft and has flawlessly completed over 2000 orbits around the Moon. The second unit is a proto-flight model. The third unit will fly onboard NASA's International Space Station (ISS) as a very compact and lightweight transmitter package for the Communications, Navigation and Networking Reconfigurable Testbed (CoNNeCT), which is scheduled for launch in 2011. These TWTAs were characterized over the frequencies 25.5 to 25.8 GHz. The saturated RF output power is greater than 40 W and the saturated RF gain is greater than 46 dB. The saturated AM-to-PM conversion is 3.5 /dB and the small signal gain ripple is 0.46 dB peak-to-peak. The overall efficiency of the TWTA, including that of the electronic power conditioner (EPC) is as high as 45%.

Simons, Rainee N.↗

AIAA Ascend 2021 Conference On Demand Manufacturing of Electronics Panel Abstract

1. Session Proposal o Session Title NASA’s In Space Manufacturing and the On Demand Manufacturing of Electronics o Session Topic Primary -- Space Logistics, Autonomy, and Robotics; Secondary – Transformative Research and Technologies o Session Format: Panel Discussion. o Requested Session Duration: 60 minutes o Short Session Description: The goal of NASA’s On Demand Manufacturing of Electronics project is to develop and demonstrate the feasibility of a low-gravity, on-demand manufacturing system for flexible hybrid electronic devices on the International Space Station. This panel will feature several key collaborators and team members from the commercial sector, academia, and internal to NASA, each of which are contributing an unique and vital role to the design and implementation of this new technology system. o Extended Session Description (Please describe in detail the activity proposed, including how you intend to use the requested session duration. This session description will be provided to the reviewers for consideration and will not be displayed in the online agenda.): The session will be moderated by Curtis Hill, the Project Lead for the On Demand Manufacturing of Electronics (ODME), and he will start by giving a brief introduction to the ODME project which is working to produce a demo system for the manufacturing of electronic devices on the International Space Station. Panelists consisting of collaborators and team members to the ODME project will then give a brief (~5 min) introduction highlighting their contributions to the project, followed by time for Q&A from the audience. The panel will consist of: 1. Kenneth Church, nScrypt. nScrypt is a leader in multi-material printing with a modular system that incorporates a direct write thick film print head, a polymer fused filament fabrication print head, a laser sintering attachment, a drill head attachment for milling, and a pick and place. The system can print a layer and scan for accuracy of prints. The combination of multiple print heads and scanning allows for the on-demand production of intricate electronic components. 2. Andy Kurk, TechShot, Inc. Techshot, Inc. has collaborated extensively with NASA on the in space manufacturing of both printed electronics and fused metal materials. They are currently working to develop and integrate a test system for printed electronics, and a flight demonstration on the International Space Station is anticipated in 2024. 3. Ed Hendricks, NextFlex. NextFlex has the goal of advancing the manufacture of flexible hybrid electronics in the U.S. They are working with ODME on the development of AstroSense, an additively manufactured, wireless, flexible, and wearable health sensor. 4. Dr. Pradeep Lall, Auburn University. Professor Lall is the MacFarlane Endowed Distinguished Professor in the Department of Mechanical Engineering with a Courtesy Joint Appointment in the Department of Electrical and Computer Engineering and a Courtesy Joint Appointment in the Department of Finance. He is collaborating with NASA’s ODME project to develop multilayer printable devices and to develop techniques to test the quality of a printed electronic device. 5. Dr. Wei Gao, California Institute of Technology. Professor Gao is an Assistant Professor of Medical Engineering. His group is developing fully printed, flexible, and wearable biosensors for crew health monitoring in collaboration with NASA’s ODME project. In addition, they are working on using sweat to power biofuel cells for wearable, self-powered electronic devices. 6. Beth Paquette, NASA Goddard. The ODME branch at NASA Goddard is spearheading a sounding rocket flight demo to prove the capability of a printed electronic device with multiple sensors. In addition, they focus on thin film and flexible energy storage evaluations. o Session Goal(s)/Outcome(s): Please list the learning objectives and/or tangible outcomes (technical paper or other publication). The goal of this session is to highlight the internal and collaborative efforts of NASA’s On Demand Manufacturing of Electronics project to develop a system for printing electronics that will be tested on the International Space Station in 2024. In addition, the session with facilitate discussion with the community on the state of the art of printable electronics, current challenges, and new avenues for collaboration.

Jennifer McInnis Jones↗

Electrical Devices and Circuits for Low Temperature Space Applications

The environmental temperature in many NASA missions, such as deep space probes and outer planetary exploration, is significantly below the range for which conventional commercial-off-the-shelf electronics is designed. Presently, spacecraft operating in the cold environment of such deep space missions carry a large number of radioisotope or other heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronic devices and circuits capable of operation at cryogenic temperatures will not only tolerate the harsh environment of deep space but also will reduce system size and weight by eliminating or reducing the heating units and their associate structures; thereby reducing system development cost as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior in the electrical and thermal properties of some semiconductor and dielectric materials at low temperatures. An on-going research and development program on low temperature electronics at the NASA Glenn Research Center focuses on the development of efficient electrical systems and circuits capable of surviving and exploiting the advantages of low temperature environments. An overview of the program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained from in-house component testing will also be discussed. On-going research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, R. L.↗

Atomic Oxygen Lamp Cleaning Facility Fabricated and Tested

NASA Lewis Research Center's Atomic Oxygen Lamp Cleaning Facility was designed to produce an atomic oxygen plasma within a metal halide lamp to remove carbon-based contamination. It is believed that these contaminants contribute to the high failure rate realized during the production of these lamps. The facility is designed to evacuate a metal halide lamp and produce a radio frequency generated atomic oxygen plasma within it. Oxygen gas, with a purity of 0.9999 percent and in the pressure range of 150 to 250 mtorr, is used in the lamp for plasma generation while the lamp is being cleaned. After cleaning is complete, the lamp can be backfilled with 0.9999-percent pure nitrogen and torch sealed. The facility comprises various vacuum components connected to a radiation-shielded box that encloses the bulb during operation. Radiofrequency power is applied to the two parallel plates of a capacitor, which are on either side of the lamp. The vacuum pump used, a Leybold Trivac Type D4B, has a pumping speed of 4-m3/hr, has an ultimate pressure of <8x10-4, and is specially adapted for pure oxygen service. The electronic power supply, matching network, and controller (500-W, 13.56-MHz) used to supply the radiofrequency power were purchased from RF Power Products Inc. Initial test results revealed that this facility could remove the carbon-based contamination from within bulbs.

Sechkar, Edward A.↗

Rise time in 20-32 keV impulsive X-radiation

A new property of the X-ray impulsive component observed in solar flares is discussed, giving attention to the relation between the slope of the electron power spectrum and the rise time in the 20-32 keV X-ray spike. This particular energy range was chosen because it offered the greatest number of impulsive events while being sufficiently high to avoid contamination by soft X radiation. It is found for the thin-target model that the electron spectrum tends to be softer when the acceleration rate is smaller.

Vorpahl, J. A.↗

Graphite fluoride fibers and their applications in the space industry

Characterization and potential space applications of graphite fluoride fibers from commercially available graphitized carbon fibers are presented. Graphite fluoride fibers with fluorine to carbon ratios of 0.65 and 0.68 were found to have electrical resistivity values of 10(exp 4) and 10(exp 11) Ohms-cm, respectively, and thermal conductivity values of 24 and 5 W/m-K, respectively. At this fluorine content range, the fibers have tensile strength of 0.25 + or - 0.10 GPa (36 + or - 14 ksi), Young's modulus of 170 + or - 30 GPa (25 + or - 5 Msi). The coefficient of thermal expansion value of a sample with fluorine to carbon ratio of 0.61 was found to be 7 ppm/C. These properties change and approach the graphite value as the fluorine content approach 0. Electrically insulative graphite fluoride fiber is at least five times more thermally conductive than fiberglass. Therefore, it can be used as a heat sinking printed circuit board material for low temperature, long life power electronics in spacecraft. Also, partially fluorinated fiber with tailor-made physical properties to meet the requirements of certain engineering design can be produced. For example, a partially fluorinated fiber could have a predetermined CTE value in -1.5 to 7 ppm/C range and would be suitable for use in solar concentrators in solar dynamic power systems. It could also have a predetermined electrical resistivity value suitable for use as a low observable material. Experimental data indicate that slightly fluorinated graphite fibers are more durable in the atomic oxygen environment than pristine graphite. Therefore, fluorination of graphite used in the construction of spacecraft that would be exposed to the low Earth orbit atomic oxygen may protect defect sites in atomic oxygen protective coatings and therefore decrease the rate of degradation of graphite.

Hung, Ching-Chen↗

High Power Silicon Carbide (SiC) Power Processing Unit Development

NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

Power Processing↗

Design of the High Energy Astronomy Observatory /HEAO/ power subsystem

Observatory power is generated by a partially deployable solar array which is modularized to facilitate adaptation to three missions having different power requirements. Three nickel-cadmium batteries are controlled independently from dedicated modular chargers to increase subsystem adaptability and decrease sensitivity to temperature differences between batteries. Battery level redundancy is employed, enabling mission completion with two of three battery/charger combinations operational. Bus voltage limiting is accomplished by a modularized shunt regulator which can survive any single part failure and meet all mission requirements. Relatively low shunt electronics power dissipation internal to the observatory is achieved by sequenced operation of linear shunt segments which are coupled to a large area resistive shunt radiator. Summaries of solar array, battery and subsystem breadboard test results are provided.

Reppucci, G. M.↗

Molecular Simulations of Ultrafast Radiation Induced Melting at Metal-Semiconductor Interfaces

Understanding radiation induced ultrafast melting at material interfaces is essential in designing robust electronic devices for aviation/space applications and in laser machining. While it is difficult to achieve the spatial and temporal resolution required to quantify the phenomenon experimentally, simulations can provide the detailed mechanisms of the structural changes that happen during phase transition. In this work, we use molecular simulations to study the effect of radiation damage on silicon carbide (SiC) - tungsten (W) interfaces which is of interest in high power electronics. A multi-scale approach is involved wherein the reactions at the interfaces are quantified using ab-initio molecular dynamics (MD) simulations and classical MD simulations are employed to understand the structural and diffusional changes across the material interface. Finally, coarse-grained Lennard-Jones type models are used to study the larger scale mechanisms and structures obtained due to the induced damages. We show that the response of the material to radiation damage depends on factors such as energy of the incident radiation, thermal properties, and molecular structure of the material.

Ravichandran, Ashwin↗

Reliable Power Hibernation and Recovery for Solar Powered Lunar Missions

NASA Glenn Research Center has been working on a solution to surviving the lunar night based on the discovery that Li-Ion cells can survive the freeze/thaw process. This implies that a lunar surface spacecraft could hibernate through the coldest portions of the night and recover at lunar dawn. Survival and recovery also depend on power electronics capable of tolerating the cold and reliably starting at lunar dawn based on solar array output alone. GRC is working with STMD Space Technology Research Grant investigators to characterize Li-ion cells through the freeze-thaw process and fully understand the electro-chemical and thermal-mechanical processes to assure reliable cell hibernation and recovery. Further, we are working with investigators to determine what power semiconductor material, transistor technology, and power architecture is best suited for reliable cold start at lunar dawn and methodically restoring the power system to full operation for the next lunar cycle.

Spacecraft Power↗

Diamond Analyzed by Secondary Electron Emission Spectroscopy

Diamond is a promising semiconductor material for novel electronic applications because of its chemical stability and inertness, heat conduction properties, and so-called negative electron affinity (NEA). When a surface has NEA, electrons generated inside the bulk of the material are able to come out into the vacuum without any potential barrier (work function). Such a material would have an extremely high secondary electron emission coefficient o, very high photoelectron (quantum) yield, and would probably be an efficient field emitter. Chemical-vapor-deposited (CVD) polycrystalline diamond films have even more advantages than diamond single crystals. Their fabrication is relatively easy and inexpensive, and they can be grown with high levels of doping--consequently, they can have relatively high conductivity. Because of these properties, diamond can be used for cold cathodes and photocathodes in high-power electronics and in high-frequency and high-temperature semiconductor devices.

Krainsky, Isay L.↗

A Thermal and Electrical Analysis of Power Semiconductor Devices

The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

Vafai, Kambiz↗

Power Converters Secure Electronics in Harsh Environments

In order to harden power converters for the rigors of space, NASA awarded multiple SBIR contracts to Blacksburg, Virginia-based VPT Inc. The resulting hybrid DC-DC converters have proven valuable in aerospace applications, and as a result the company has generated millions in revenue from the product line and created four high-tech jobs to handle production.

Source record↗

Power Supply Unit

The Cuk DC to DC Switching Converter was developed by Caltech Professors, Slobodan Cuk and R. D. Middlebrook. The converter changes unsuitable dc voltage into one or more voltages suitable for powering electronic equipment; it can also be used in converting dc current to ac and vice versa. It was named one of the 100 most significant technical advances of 1979. The Cuk converter is more efficient than previous conversion devices, simpler, smaller, lighter, cheaper and highly reliable. The first application of the technology is in the Compucorp 685 word/data processor, manufactured by Compucorp. NASA waived title rights; Caltech granted exclusive license to the inventors, who in turn, transferred their rights to a company they founded called TESLA Company, which sublicenses the converter design and related technology to companies making power supplies for use in their own products.

Source record↗

A Battery Charger and State of Charge Indicator

A battery charger which has a full wave rectifier in series with a transformer isolated 20 kHz dc-dc converter with high frequency switches, which are programmed to actively shape the input dc line current to be a mirror image of the ac line voltage is discussed. The power circuit operates at 2 kW peak and 1 kW average power. The BC/SCI has two major subsystems: (1) the battery charger power electronics with its controls; and (2) a microcomputer subsystem which is used to acquire battery terminal data and exercise the state of charge software programs. The state of charge definition employed is the energy remaining in the battery when extracted at a 10 kW rate divided by the energy capacity of a fully charged new battery. The battery charger circuit is an isolated boost converter operating at an internal frequency of 20 kHz. The switches selected for the battery charger are the single most important item in determining its efficiency. The combination of voltage and current requirements dictate the use of high power NPN Darlington switching transistors. The power circuit topology is a three switch design which utilizes a power FET on the center tap of the isolation transformer and the power Darlingtons on each of the two ends. An analog control system is employed to accomplish active input current waveshaping as well as the necessary regulation.

Latos, T. S.↗

Silicon Carbide Nanotube Synthesized

Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

Lienhard, Michael A.↗

Development of SiC Large Tapered Crystal Growth

Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

Neudeck, Phil↗