High Temperature Microwave Dielectric Properties of JSC-1AC Lunar Simulant
Microwave heating has many potential lunar applications including sintering regolith for lunar surface stabilization and heating regolith for various oxygen production reactors. The microwave properties of lunar simulants must be understood so this technology can be applied to lunar operations. Dielectric properties at microwave frequencies for a common lunar simulant, JSC-1AC, were measured up to 1100 C, which is approximately the melting point. The experimentally determined dielectric properties included real and imaginary permittivity (epsilon', epsilon"), loss tangent (tan delta), and half-power depth, the di stance at which a material absorbs 50% of incident microwave energy. Measurements at 2.45 GHz revealed tan delta of JSC-1A increases from 0.02 at 25 C to 0.31 at 110 C. The corresponding half-power depth decreases from a peak of 286 mm at 110 C, to 13 mm at 1100 C. These data indicate that JSC-1AC becomes more absorbing, and thus a better microwave heater as temperature increases. A half-power depth maximum at 100-200 C presents a barrier to direct microwave heating at low temperatures. Microwave heating experiments confirm the sluggish heating effect of weak absorption below 200 C, and increasingly strong absorption above 200 C, leading to rapid heating and melting of JSC-1AC.