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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Sintering of reaction bonded silicon nitride

A process to produce sintered reaction-bonded Si3N4 (SRBSN) articles has been developed. This process consists of the addition of an appropriate sintering aid to reaction-bonded Si3N4 followed by sintering between 1780 and 2000 C, using an over pressure of nitrogen. The principal advantage of this process is the low sintering shrinkages of 5 to 10 percent. The properties and microstructure of two SRBSN systems sintered with MgO and Y2O3 additives are described and were found to be comparable to corresponding hot-pressed Si3N4 systems. Examples of applications of both systems are illustrated, demonstrating near net shape fabrication capability of the process.

Mangels, J. A.↗
NASA NTRS1983

Grain-boundary phases in hot-pressed silicon nitride containing Y2O3 and CeO2 additives

Auger electron spectroscopy in conjunction with X-ray powder diffraction and scanning electron microscopy is used to analyze the grain-boundary phases of Y2O3- and CeO2-doped Si3N4 hot-pressed materials in order to demonstrate that the additives concentrate predominantly in the grain boundaries of Si3N4 in the form of various oxynitride phases. A high oxygen content observed in sample fracture surfaces was found to be consistent with the existence of an oxygen-enriched phase in the grain boundaries. The presence of yttrium and cerium in the fracture surfaces and an overall increase in the O/N ratio imply that the additive oxides are predominantly concentrated in the intergranular phases.

Guha, J. P.↗
NASA NTRS1984

Silicon nitride powder

The characteristics and preparation methods of Si3N4 are reviewed. Special emphasis is placed on the correlation between impurities and strength of sintered Si3N4.

Mori, M.↗
NASA NTRS1984

Radiographic detectability limits for seeded voids in sintered silicon carbide and silicon nitride

Conventional and microfocus X-radiographic techniques were compared to determine relative detectability limits for voids in green and sintered SiC and Si3N4. The relative sensitivity of the techniques was evaluated by comparing their ability to detect voids that were artificially introduced by a seeding process. For projection microfocus radiography the sensitivity of void detection at a 90/95 probability of detection/confidence level is 1.5% of specimen thickness in sintered SiC and Si3N4. For conventional contact radiography the sensitivity is 2.5% of specimen thickness. It appears that microfocus projection radiography is preferable to conventional contact radiography in cases where increased sensitivity is required and where the additional complexity of the technique can be tolerated.

Baaklini, G. Y.↗
NASA NTRS1985

Silicon carbide-silicon nitride fibers: Preparation and characterization of polycarbosilazane precursors

This study examines the effect of modifications of the chemical structure of the monomers on the properties of the polymeric precursor and and ceramic fibers. A group of silaneamines, R'-Si (NH-R) sub 3, taken from the series where R' is methyl or phenyl and R is n-propyl, n-butyl, phenyl or allyl, are converted to polycarbosilazanes by heating in excess of 500 C. Resins obtained from this polymerization are characterized by NMR and IR spectroscopy and GPC. Each resin is tested for fiber-forming properties. Resin samples and fibers are hydrolytically cured. Thermogravimetric analyses are conducted on the cured resins to compare the relative thermal stability and examine the pyrolysis process. Cured fibers are tested for tensil strength.

Crouse, D. J.↗
NASA NTRS1985

Method for measuring surface activity of silicon nitride powder

Amorphous, alpha-, and beta-Si3N4 powders were activated by vibration ball milling in purified MeOH, and the surface activity of ground powders was determined by the temperature programmed desorption (TPD) method using NH3 gas. The concentration of active sites with a potential energy equivalent to the peak temperature in the spectrum increased was markedly by ball milling the amorphous Si3N4. The alpha- and beta-Si3N4 also had active sites produced by ball milling. The concentration of active site increased with increased ball milling time. A method for measuring surface activity of ceramic raw materials by TPD is proposed.

Kanno, Y.↗
NASA NTRS1985

Oxidation of silicon nitride sintered with rare-earth oxide additions

The effects of rare-earth oxide additions on the oxidation of sintered Si3N4 were examined. Insignificant oxidation occurred at 700 and 1000 C, with no evidence of phase instability. At 1370 C, the oxidation rate was lowest for Y2O3 and increased for additions of La2O3, Sm2O3, and CeO2, in that order. Data obtained from X-ray diffraction, electron microprobe analysis, and scanning electron microscopy indicate that oxidation occurs via diffusion of cationic species from Si3N4 grain boundaries.

Mieskowski, D. M.↗
NASA NTRS1985

Microstructure of reaction-bonded silicon nitride consolidated by isostatic hot-pressing

A microstructural examination and chemical analysis are conducted for reaction-bonded Si3N4 specimens that were isostatically hot pressed at 1850, 1950, and 2050 C. The present observations indicate that the previously reported increase in the 1200 C bend strength of reaction-bonded Si3N4, after pressing at 2050 C exclusively, is due to the relative oxygen levels of the isostatically hot pressed specimens; calculations show that an SiO2 content of less than about 2.2 vol pct is needed to yield the 1200 C strength increase.

Mieskowski, D. M.↗
NASA NTRS1985

Manufacture of dense sintered bodies containing silicon nitride

Sintered bodies containing 1-32.5 Si oxide and 1.5 wt.% SiC (Si oxide/SiC wt. ratio 3/2) are prepared and kept in a 10-3000 kg/2 sq. cm. N (g) atmosphere at 1500-2300 degrees, while simultaneously maintaining the CO (g) partial pressure around the body lower than the nitrogenation equil. pressure to give a dense sintered body. The prepared dense sintered body has high strength at high temperatures. Thus, SiC 40, oxide 30 and Si3N4 30 wt% were fired to a body which was kept in 1500 kg/sq. cm. N (g) for 20 h at 2000 degrees to give a dense sintered body having high bending strength at high temperatures.

Hirota, K.↗
NASA NTRS1986

Correlation of processing and sintering variables with the strength and radiography of silicon nitride

A sintered Si3N4-SiO2-Y2O3 composition, NASA 6Y, was developed that reached four-point flexural average strength/standard deviation values of 857/36, 544/33, and 462/59 MPa at room temperature, 1200 and 1370 C respectively. These strengths represented improvements of 56, 38, and 21 percent over baseline properties at the three test temperatures. At room temperature the standard deviation was reduced by over a factor of three. These accomplishments were realized by the iterative utilization of conventional x-radiography to characterize structural (density) uniformity as affected by systematic changes in powder processing and sintering parameters. Accompanying the improvement in mechanical properties was a change in the type of flaw causing failure from a pore to a large columnar beta- Si3N4 grain typically 40 to 80 microns long, 10 to 30 microns wide, and with an aspect ratio of 5:1.

Sanders, W. A.↗
NASA NTRS1986

Radiographic detectability limits for seeded voids in sintered silicon carbide and silicon nitride

Conventional and microfocus X-radiographic techniques were compared to determine relative detectability limits for voids in green and sintered SiC and Si3N4. The relative sensitivity of the techniques was evaluated by comparing their ability to detect voids that were artificially introduced by a seeding process. For projection microfocus radiography the sensitivity of void detection at a 90/95 probability of detection/confidence level is 1.5 percent of specimen thickness in sintered SiC and Si3N4. For conventional contact radiography the sensitivity is 2.5 percent of specimen thickness. It appears that microfocus projection radiography is preferable to conventional contact radiography in cases where increased sensitivity is required and where the additional complexity of the technique can be tolerated.

Baaklini, G. Y.↗
NASA NTRS1986

Effect of grain-boundary crystallization on the high-temperature strength of silicon nitride

Si3N4 specimens having the composition 88.7 wt pct Si3N4-4.9 wt pct SiO2-6.4 wt pct Y2O3 were sintered at 2140 C under 25 atm N2 for 1 h and then subjected to a 5 h anneal at 1500 C. Crystallization of an amorphous grain-boundary phase resulted in the formation of Y2Si2O7. The short-time 1370 C strength of this material was compared with that of material of the same composition having no annealing treatment. No change in strength was noted. This is attributed to the refractory nature of the yttrium-rich grain-boundary phase (apparently identical in both glassy and crystalline phases) and the subsequent domination of the failure process by common processing flaws.

Pierce, L. A.↗
NASA NTRS1986

Correlation of processing and sintering variables with the strength and radiography of silicon nitride

A sintered Si3N4-SiO2-Y2O3 composition, NASA 6Y, was developed that reached four-point flexural average strength/standard deviation values of 857/36, 544/33, and 462/59 MPa at room temperature, 1200 and 1370 C, respectively. These strengths represented improvements of 56, 38, and 21 percent over baseline properties at the three test temperatures. At room temperature the standard deviation was reduced by over a factor of three. These accomplishments were realized by the iterative utilization of conventional X-radiography to characterize structural (density) uniformity as affected by systematic changes in powder processing and sintering parameters. Accompanying the improvement in mechanical properties was a change in the type of flaw causing failure from a pore to a large columnar beta-Si3N4 grain typically 40-80 micron long, 10-30 micron wide, and with an aspect ratio of 5:1.

Sanders, W. A.↗
NASA NTRS1988

Molten-salt corrosion of silicon nitride. I - Sodium carbonate. II - Sodium sulfate

An experimental study of the corrosion of Si3N4 under thin films of Na2CO3 at 1000 C has been conducted using both pure Si3N4 and Si3N4 with various additives. The reaction mechanism is shown to consist of: (1) the decomposition of Na2CO3 and the formation of Na2SiO3; (2) rapid oxidation; and (3) the formation of a protective silica layer below the silicate. In the second part, the corrosion mechanism of Si3N4 + Na2SO4/O2 at 1000 C was studied for both pure and additive-containing Si3N4. The reaction of Si3N4 + Na2SO4 was found to involve an initial period of slow weight loss (due to Na2SO4 vaporization and oxidation-dissolution) followed by further oxidation or the near termination of the reaction, depending on the Si3N4 additive.

Fox, Dennis S.↗
NASA NTRS1988

Thermal effects on the mechanical properties of SiC fiber reinforced reaction bonded silicon nitride matrix (SiC/RBSN) composites

The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

Bhatt, R. T.↗
NASA NTRS1989

Hot isostatic pressing of silicon nitride with boron nitride, boron carbide, and carbon additions

Si3N4 test bars containing additions of BN, B4C, and C, were hot isostatically pressed in Ta cladding at 1900 and 2050 C to 98.9 percent to 99.5 percent theoretical density. Room-temperature strength data on specimens containing 2 wt pct BN and 0.5 wt pct C were comparable to data obtained for Si3N4 sintered with Y2O3, Y2O3 and Al2O3, or ZrO2. The 1370 C strengths were less than those obtained for additions of Y2O3 or ZrO2 but greater than those obtained from a combination of Y2O3 and Al2O3. SEM fractography indicated that, as with other types of Si3N4, room-temperature strength was controlled by processing flaws. The decrease in strength at 1370 C was typical of Si3N4 having an amorphous grain-boundary phase. The primary advantage of nonoxide additions appears to be in facilitating specimen removal from the Ta cladding.

Mieskowski, Diane M.↗