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251 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Tuned and screened range-separated hybrid density functional theory for describing electronic and optical properties of defective gallium nitride

We apply a hybrid density functional theory approach, based on a tuned and screened range-separated hybrid (SRSH) exchange-correlation functional, to describe the optoelectronic properties of defective gallium nitride (GaN). SRSH and time-dependent SRSH (TDSRSH) are tuned to produce accurate energetics for the pristine material and applied to the study of a series of point defects in bulk GaN, a blue light-emitting material that degrades in the presence of defects. We first establish the accuracy of the method by comparing the predicted quasiparticle gap and low-energy excitation spectra of (TD)SRSH and many-body perturbation theory for both pristine GaN and GaN containing a single nitrogen vacancy. Aided by the reduced computational cost of (TD)SRSH, we then report on three additional technologically relevant point defects and defect complexes in GaN: the gallium vacancy, the carbon interstitial, and the carbon-silicon complex. We compute the low-energy optical absorption spectra for these defects and show the presence of defect-centered transitions. Furthermore, by estimating the Stokes shift, we predict, in agreement with previous studies, that the carbon substitutional defect is a candidate for the detrimental yellow luminescence in GaN. Furthermore, this study indicates that TDSRSH is a promising and computationally feasible approach for quantitatively accurate, first-principles modeling of defective semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Robust Solar Receivers Using MAX Phase Materials

This work was supported by the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy under the Solar Energy Technologies Office Award Number 35928. The objective of the proposed effort was to develop and optimize additive manufacturing technologies for low-cost fabrication of high-temperature receivers using MAX phase-based materials (Ti 3 SiC 2 and Ti 3 AlC 2 ). MAX phase materials are a group of ternary metal carbides and nitrides where M stands for an early transition metal element, A is a group 13–16 element, and X is C and/or N. In Phase 1, the binder jetting additive manufacturing process was used to synthesize and characterize the Ti 3 SiC 2 MAX phase material. The typical process involved first producing a TiC preform using binder jetting followed by infiltration of the preform with silicon melt to form Ti 3 SiC 2 in situ. The reaction-infiltrated samples showed formation of MAX phase in the sample core; however, the surface showed cracking. Various process conditions—cooling rates, hold times, Si proportion, etc.—were varied to minimize the surface cracking. The fabricated MAX phase core was characterized by microstructure analysis and evaluations of mechanical properties such as hardness and thermal shock. In Phase 2, the focus included fabrication of Ti 3 SiC 2 MAX phase materials by spark plasma sintering (SPS) and synthesis of Ti 3 AlC 2 MAX phase materials by the Al melt infiltration process. It is expected that Al infiltration will not cause sample cracking, since Al does not expand during solidification. In addition, other processing approaches were investigated to fabricate the MAX phase materials, such as SPS with a graphite bedding approach for producing short-length Ti 3 AlC 2 MAX phase tubes for demonstration of prototypical Concentrating Solar Power receiver tubes. Fabricated samples underwent thermo-mechanical testing to validate the materials for the solar receiver application at temperatures >1000°C. In Phase 3, the effort focused on the development and optimization of the Ti-Al-C MAX phase composite material using the Al melt infiltration approach. We started with optimization of precursor powders and making preform structures by either pressing them in a die or using the binder jetting additive manufacturing process followed by Al melt infiltration. In addition, we investigated the formation of preform structures by cold isostatic pressing followed by Al melt infiltration for making Ti-Al-C MAX phase composite. Thermo-mechanical characterizations, such as creep, strength, and thermal shock, were conducted to establish the structures’ performance.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Improvements in the Sample Space for the Backscattering Silicon Spectrometer (BASIS)

The increase in neutron flux at the Oak Ridge National Laboratory (ORNL) Spallation Neutron Source (SNS), currently operating at 2.0 MW proton beam power, has created new opportunities for higher-throughput neutron scattering experiments while also increasing the importance of minimizing background scattering and optimizing sample-environment operations. To address these challenges on the Backscattering Silicon Spectrometer (BA-SIS), several upgrades were developed and evaluated, including boron carbide (B₄C) masking for flat-plate sample containers, multi-cell sample holders used with a vertically translating sample stick, and an automated helium pump and purge (HPP) system for closed-cycle refrigerators. Neutron diffraction measurements demonstrate that B₄C masks reduce background scattering by 49–67%, outperforming both borated aluminum and boron nitride masks while introducing no additional Bragg reflections within the instrument’s accessible Q-range. Commissioning tests of a double-cell flat-plate sample contain-er showed no measurable crosstalk between adjacent sample compartments and con-firmed stable thermal performance, enabling multiple samples to be measured without re-peated temperature cycling. In addition, the automated HPP system provided reproducible sample-space gas handling with approximately ±1 mbar precision while reducing the need for operator intervention and supporting remote operation. Together, these developments improve signal-to-noise performance, increase experimental throughput, and enhance operational efficiency at BASIS, supporting the instrument’s continued operation under higher neutron flux conditions.

Jalarvo, Niina [ORNL] (ORCID:0000000306446866)↗
DOE OSTI2026

Water Vapor Resistant SiC/SiC Composite for Hydrogen-Based Turbines (Final Scientific Technical Report)

New material innovations are needed for the extreme environments of next generation, hydrogen-fueled turbine engines. Ceramic matrix composites (CMCs) offer high-temperature capability but are susceptible to degradation in high-temperature water vapor. Pratt & Whitney’s (P&W) baseline silicon carbide (SiC)/SiC CMC was initially applied to design a component in a hydrogen-fueled engine, verifying the existence of a design space and extracting boundary conditions to inform testing parameters. Several material innovations, including two fibers, interface coatings (IFC), and self-healing matrices (SHM), were investigated to improve high-temperature performance in water vapor. A boron-doped pyrocarbon (B-PyC) IFC and a SHM matrix with layers of zirconium nitride (ZrN) or zirconium diboride (ZrB 2 ) were developed to fabricate minicomposites with either standard Hi-Nicalon™ Type S (HNS) fibers or new Tyranno® SA4 fibers (SA4). The B-PyC IFC is functional but lacks in providing improved durability. A matrix consisting of thick layers of SiC and thin layers of ZrB 2 shows promise as a SHM that can effectively seal matrix cracks in this extreme environment. Minicomposites with HNS fibers generally outperform those with SA4 fibers.

08 HYDROGEN↗
DOE OSTI2025

Advanced polymer impregnation and pyrolysis (PIP) of SiOC-based ceramic matrix composites (CMCs)

Silicon carbide (SiC) ceramic matrix composites (CMCs) are valued for their high-temperature properties, making them ideal for harsh environments. However, conventional polymer impregnation and pyrolysis (C-PIP) often result in porous composites and require numerous cycles for densification. This study introduces the advanced PIP (A-PIP) method using a crosslinked polycarbosiloxane (PCS) precursor to enhance densification efficiency. Five SiC CMCs were fabricated using C-PIP and A-PIP, with variations in fiber reinforcement and fiber coatings. A-PIP achieved up to 19 % higher density and 78 % lower porosity in 79–86 % less processing time compared to C-PIP. Moreover, SiC-SiOC composites with boron nitride-coated fibers showed significant improvements in tensile strength (11 MPa to 134 MPa) and strain at maximum strength (0.01–0.11 %), underscoring the role of weak fiber-matrix interfaces. In conclusion, these results demonstrate A-PIP's potential to produce dense, low-porosity SiC CMCs more efficiently, significantly reducing manufacturing time and costs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Postirradiation examination from separate effects irradiation testing of uranium nitride kernels and coated particles

An overview of postirradiation examination results for uranium nitride kernels and uranium nitride coated particles irradiated in the High Flux Isotope Reactor are presented. This is the first postirradiation examination of the MiniFuel irradiation vehicle that was recently developed to rapidly accumulate burnup during separate effects irradiation testing. In general, the burnup and fuel temperatures measured postirradiation were consistent with the design calculations. The burnup measured by mass spectrometry ranged from 5.9 to 10 MWd/kgU and was achieved after only 68 effective full-power days of irradiation. The dilatometric evaluation of passive silicon carbide thermometry indicated that the fuel was irradiated at temperatures ranging from 410 to 460 °C. Because the irradiation temperatures and burnup were low, the UN kernels showed minimal fission gas release that was within the range of the expected recoil (athermal) release. While it is possible to measure fuel swelling using x-ray computed tomography, the observed swelling was too small to quantify in this case. Extensive microstructural characterization of the irradiated fuel was performed in this study, and no significant irradiation induced changes were observed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Summary of the Postirradiation Examination of the First Samples from a MiniFuel Irradiation

An overview of postirradiation examination results for uranium nitride kernels and uranium nitride coated particles irradiated in the High Flux Isotope Reactor are presented. This is the first postirradiation examination of the MiniFuel irradiation vehicle that was recently developed to rapidly screen different nuclear fuel concepts. Observations on fission gas release, irradiation conditions and microstructure of the irradiated fuel show good fuel performance at the low burnup achieved in this initial irradiation. The burnup measured by mass spectrometry ranged from 5.9 to 10 MWd/kgU as was achieved after only 68 effective full power days of irradiation. Results from silicon carbide thermometry measurements further benchmarked the MiniFuel irradiation vehicle and indicated fuel was irradiated at temperatures ranging from 410-460°C. Extensive microstructural characterization on the irradiated fuel was performed and no significant irradiation induced changes were observed.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such as the contact resistance, on/off ratio and mobility are often limited by the presence of interfacial residues caused by transfer procedures. Here, we show an ideal residue-free transfer approach using polypropylene carbonate with a negligible residue coverage of ~0.08% for monolayer MoS 2 at the centimetre scale. By incorporating a bismuth semimetal contact with an atomically clean monolayer MoS 2 field-effect transistor on hexagonal boron nitride substrate, we obtain an ultralow Ohmic contact resistance of ~78 Ω µm, approaching the quantum limit, and a record-high on/off ratio of ~10 11 at 15 K. Further, such an ultra-clean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting transition metal dichalcogenides.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Thin-film lithium niobate on diamond as a platform for efficient spin-phonon coupling

Negatively charged silicon vacancy (SiV − ) centers in diamond are leading candidates for solid-state quantum memory that can be controlled using electromagnetic or acoustic waves. The latter are particularly promising due to the strong strain response of SiV − , enabling large spin-phonon interaction strengths. Indeed, coherent spin control via surface acoustic waves (SAWs) has been demonstrated and is essential for developing on-chip phononic quantum networks. However, the absence of piezoelectricity in diamond requires an interface with a piezoelectric material for efficient transduction and delivery of acoustic waves to spins in diamonds. Here, we demonstrate a heterogeneously integrated phononic platform that combines thin-film lithium niobate with diamond to enable acoustic control of single SiV − spins. Additionally, leveraging large SAW-induced strain at the location of SiV − , we achieve coherent acoustic control of an electron spin with more than twofold improvement in Rabi frequency compared to state-of-the-art devices based on aluminum nitride on diamond. Furthermore, this work represents a crucial step towards realizing phonon-based quantum information processing systems.

Optically detected magnetic resonance↗
DOE OSTI2026

CMOS-fabricated ultraviolet light modulator using low-loss alumina piezo-optomechanical photonics

Ultra-violet (UV) and near-UV wavelengths are necessary for many important optical transitions for quantum technologies and various sensing mechanisms for biological and chemical detection. However, all well-known photonic platforms have excessively high losses in the UV, which has prevented photonic integrated circuits (PICs) being used to address these and other important application spaces. Photonic waveguides using low-loss alumina cores and silicon dioxide cladding have emerged as a promising solution because of alumina’s large optical bandgap and the high quality of films enabled by atomic layer deposition. These properties allow passive, low-loss waveguide operation down to at least 266 nm using multimode widths. However, to the best of our knowledge, active alumina PICs have only been realized using thermo-optic tuning, which precludes switching speeds shorter than approximately 100 microseconds, high circuit densities, and cryogenically compatible operation. Here, we introduce a CMOS-fabricated, piezo-optomechanical PIC platform using alumina waveguides and piezoelectric aluminum nitride strain actuators. The platform allows for sub-microsecond switching times, high circuit densities, and cryogenic operation which is desired in many UV PIC applications. We demonstrate a high-performance, reconfigurable optical filter operating at wavelengths as low as 320 nm. The filter has a 6-nanosecond switching time, a loaded linewidth of 3.3 GHz, tuning rate of 28 V/linewidth, and a hold power of less than 20 nW at one linewidth detuning. This work establishes the foundations for a new class of CMOS-fabricated, rapidly reconfigurable, and low-power UV photonic circuits compatible with wavelengths as low as 225 nm.

Castillo, Zachary A. [Sandia National Laboratories↗
DOE OSTI2022

Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation

Here, we report the first nonjellium, systematic, density functional theory (DFT) study of intrinsic and extrinsic defects and defect levels in zinc-blende (cubic) gallium nitride. We use the local moment counter charge (LMCC) method, the standard Perdew-Becke-Ernzerhoff (PBE) exchange-correlation potential, and two pseudopotentials, where the Ga 3$\textit{d}$ orbitals are either in the core ($d^0$) or explicitly in the valence set ($d^{10}$). We studied 64, 216, 512, and 1000 atom supercells, and demonstrated convergence to the infinite limit, crucial for delineating deep from shallow states near band edges, and for demonstrating the elimination of finite cell-size errors. Contrary to common claims, we find that exact exchange is not required to obtain defect levels across the experimental band gap. As was true in silicon, silicon carbide, and gallium arsenide, the extremal LMCC defect levels of the aggregate of defects yield an effective LMCC defect band gap that is within 10% of the experimental gap (3.3 eV) for both pseudopotentials. We demonstrate that the gallium vacancy is more complicated than previously reported. There is dramatic metastability–a nearest-neighbor nitrogen atom shifts into the gallium site, forming an antisite, nitrogen vacancy pair, which is more stable than the simple vacancy for positive charge states. Our assessment of the $d^0$ and $d^{10}$ pseudopotentials yields minimal differences in defect structures and defect levels. The better agreement of the $d^0$ lattice constant with experiment suggests that the more computationally economical $d^0$ pseudopotentials are sufficient to achieve the fidelity possible within the physical accuracy of DFT, and thereby enable calculations in larger supercells necessary to demonstrate convergence with respect to finite size supercell errors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111>oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

Matias, Vladimir↗
DOE OSTI2021

Self-assembled vertically aligned nanocomposite systems integrated on silicon substrate: Progress and future perspectives

Silicon (Si) integration is a critical step for implementing functional oxides into Si-based electronic devices, considering the advantages of low-cost and scalability of Si substrates. In the past decade, self-assembled vertically aligned nanocomposites (VANs) have attracted enormous research interest owing to their unique multifunctionalities and highly tunable physical properties as well as their one-step self-assembly process. Most of the VAN thin films have been reported to grow epitaxially on single crystalline oxide substrates, however, with limited systems reported on Si substrates due to the very large lattice mismatch between oxides and Si lattices. In this review, the current progress for self-assembled VAN systems integrated on a Si substrate is summarized. Buffer layered enabled VAN growth has been proven to be an effective approach for improving the epitaxial quality of oxide-oxide and oxide-metal VAN systems, while direct growth is preferred in nitride-metal VAN systems. Furthermore, the material versatility enables the Si-integrated VAN thin films to exhibit distinct physical properties such as ferromagnetism, ferroelectricity, magnetoresistance, as well as unique optical properties. The review also summarizes the various parameters for tuning the growth morphologies and corresponding properties for the VAN systems, including phase molar ratio, deposition frequency, buffer layers, background pressure, etc. Finally, future perspectives are discussed including new VAN system exploration, physical properties tuning, as well as design and fabrication of Si-based nanoelectronics and nanophotonic devices applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High volume packing fraction TRISO-based fuel in light water reactors

We report that for a decade, fully ceramic microencapsulated (FCM) fuel, containing tri-structural isotropic (TRISO) fuel particles in a silicon carbide (SiC) matrix, has been investigated as an accident-tolerant fuel for light water reactors (LWRs). Other examples exist of TRISO-based concepts for LWR fuels with different matrix materials. Previous studies assumed TRISO particle volume packing of approximately 0.44 in SiC (or another) matrix, the highest realistic packing fractions possible with conventional manufacturing. Recent advances in advanced manufacturing have yielded the development and demonstration of a fuel form that consists of conventionally manufactured TRISO particles in a 3D-printed SiC matrix with significantly higher possible TRISO packing fractions (0.5–0.7). This increased uranium loading enhances the viability of using TRISO-based particle fuel forms in LWRs. The viability of high-packing-fraction TRISO-based particle fuel forms in LWRs is assessed from the perspective of fuel cycle length, achievable fuel burnup, reactivity coefficients, and fuel cycle performance. Higher-packing-fraction TRISO-based fuel enables either longer cycle lengths (by ~25% at a packing fraction of 0.55 relative to 0.44) at a constant enrichment or decreased enrichments (by ~25% at a packing fraction of 0.55 relative to 0.44) at a constant cycle length. Studies of different fuel kernel types (uranium nitride, uranium oxycarbide, and uranium carbide) yield similar results, although the cycle length of uranium oxycarbide is shorter than for uranium nitride or uranium carbide (due to the lower density of uranium oxide). This work also characterized the production of 14 C resulting from neutron absorption in 14 N during operation for uranium mononitride fuel kernels; the ratio of 14 C/N was 1–2 at. % at discharge. For the fuel cycle evaluation, the activity of spent nuclear fuel and high-level waste at 100 and 100,000 years was lower for high-packing-fraction fuels than for conventional LWR fuel. Environmental impact metrics were similar overall, but higher on the front end of the fuel cycle and lower on the back end of the fuel cycle. Reactivity coefficients of higher-packing-fraction TRISO-based fuel were reasonable compared with those of conventional fuels.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Reaction of Hydrazine with Solution- and Vacuum-Prepared Selectively Terminated Si(100) Surfaces: Pathways to the Formation of Direct Si–N Bonds

Here, the reactivity of liquid hydrazine (N 2 H 4 ) with respect to H-, Cl-, and Br-terminated Si(100) surfaces was investigated to uncover the principles of nitrogen incorporation into the interface. This process has important implications in a wide variety of applications, including semiconductor surface passivation and functionalization, nitride growth, and many others. The use of hydrazine as a precursor allows for reactions that exclude carbon and oxygen, the primary sources of contamination in processing. In this work, the reactivity of N 2 H 4 with H- and Cl-terminated surfaces prepared by traditional solvent-based methods and with a Br-terminated Si(100) prepared in ultrahigh vacuum was compared. The reactions were studied with X-ray photoelectron spectroscopy, atomic force microscopy, and scanning tunneling microscopy, and the observations were supported by computational investigations. The H-terminated surface led to the highest level of nitrogen incorporation; however, the process proceeds with increasing surface roughness, suggesting possible etching or replacement reactions. In the case of Cl-terminated (predominantly dichloride) and Br-terminated (monobromide) surfaces, the amount of nitrogen incorporation on both surfaces after the reaction with hydrazine was very similar despite the differences in preparation, initial structure, and chemical composition. Density functional theory was used to propose the possible surface structures and to analyze surface reactivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition

The unintentional impurity incorporation in GaN epitaxial layers impacts the electrical conductivity and optical properties of the films grown by metalorganic chemical vapor deposition (MOCVD). It is critical to control impurity-related states for device structure development. The aim of this work is to contribute to the understanding of the reasons for the presence of certain background impurities. In this paper, the unintentional impurity incorporation of carbon, hydrogen, oxygen, and silicon in undoped (u-) GaN films grown by low-pressure MOCVD were studied. Background impurity concentrations were evaluated by secondary ion mass spectroscopy (SIMS) to optimize growth parameters including V/III ratio, growth temperature (T g ), growth pressure (P g ), and gallium (Ga) precursors of trimethylgallium (TMG) or triethylgallium (TEG). Unintentional [C] and [Si] incorporations are found to be highly dependent on the growth parameters. Further, for the same growth conditions, u-GaN films grown with a TEG precursor exhibited a lower background concentration of C compared to that of GaN grown with TMG. However, the lowest background [C] achieved was grown with TMG using optimized conditions and exhibited [C]<4×10 15 cm -3 which was at the detection limit of the SIMS measurement. These results were measured for a u-GaN layer grown with TMG at 200 Torr, 1030°C, and a V/III of 3700. The lowest background [Si] of 4×10 15 cm -3 was achieved by growing with TMG at 200 Torr, 1000°C, and V/III of 650.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗