Search NASA⌕ Search

SEARCH · Search NASA

Results for “single-crystals”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Point contact silicon solar cells

The construction of a 22.2% efficient single-crystal silicon solar cell fabricated at Stanford University is described. The cell dimensions were 3 x 5 mm and 100 microns thick with a base lifetime of 500 microseconds. The cell featured light trapping between a texturized top surface and a reflective bottom surface, small point contact diffusions, alternating between n-type and p-type in a polka-dot pattern on the bottom surface, and a surface passivation on all surfaces between contact regions.

Swanson, R. M.↗
NASA NTRS1987

Probabilistic structural analysis to evaluate the structural durability of SSME critical components

NASA Lewis Research Center is currently developing probabilistic structural analysis methods for select Space Shuttle Main Engine (SSME) structural components. Briefly, the deterministic, three-dimensional, inelastic analysis methodology developed under the Hot Section Technology (HOST) and R and T Base Programs is being augmented to accommodate the complex probabilistic loading spectra, the thermoviscoplastic material behavior, and the material degradation associated with the environment of space propulsion system structural components representative of the SSME such as turbine blades, transfer ducts, and liquid-oxygen posts. The development of probabilistic structural analysis methodology consists of the following program elements: (1) composite load spectra; (2) probabilistic structural analysis methods; (3) probabilistic finite element theory - new variational principles; and (4) probabilistic structural analysis application. In addition, the program includes deterministic analysis elements: (1) development of structural tailoring computer codes (SSME/STAEBL); (2) development of dynamic creep buckling/ratcheting theory; (3) evaluation of the dynamic characteristics of single-crystal SSME blades; (4) development of SSME blade damper technology; and (5) development of integrated boundary elements for hotfluid structure interaction.

Chamis, Christos C.↗
NASA NTRS1986

Protein crystal growth; Proceedings of the First International Conference, Stanford University, CA, August 14-16, 1985

Papers are presented on mechanisms of nucleation and growth of protein crystals, the role of purification in the crystallization of proteins and nucleic acids, and the effect of chemical impurities in polyethylene glycol on macromolecular crystallization. Also considered are growth kinetics of tetragonal lysozyme crystals, thermodynamic and kinetic considerations for crystal growth of complex molecules from solution, protein single-crystal growth under microgravity, and growth of organic crystals in a microgravity environment. Papers are also presented on preliminary investigations of protein crystal growth using the Space Shuttle, convective diffusion in protein crystal growth, and the growth and characterization of membrane protein crystals.

Feigelson, R. S.↗
NASA NTRS1986

Plastic deformation of a magnesium oxide 001-plane surface produced by cavitation

An investigation was conducted to examine plastic deformation of a cleaved single-crystal magnesium oxide 001-plane surface exposed to cavitation. Cavitation damage experiments were carried out in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (2 mm) to the surface of the cleaved specimen. The dislocation-etch-pit patterns induced by cavitation were examined and compared with that of microhardness indentations. The results revealed that dislocation-etch-pit patterns around hardness indentations contain both screw and edge dislocations, while the etch-pit patterns on the surface exposed to cavitation contain only screw dislocations. During cavitation, deformation occurred in a thin surface layer, accompanied by work-hardening of the ceramic. The row of screw dislocations underwent a stable growth, which was analyzed crystallographically.

Hattori, S.↗
NASA NTRS1986

Reflectivity of silicon carbide in the extreme ultraviolet

Reflectivity and scattering measurements on samples of SiC manufactured by a variety of processes. Measurements were made from near-normal to grazing incidence at wavelengths in the range of 114 to 1216 A. CVD SiC displays the highest reflectivity at EUV wavelengths and normal incidence. At grazing incidence, Si-rich samples show reflectivity cutoff identical to polycrystalline Si. From the limited data available for single-crystal material, it is concluded that CVD material has comparable performance.

Mrowka, Stanley↗
NASA NTRS1987

The stability of lamellar gamma-gamma-prime structures

The stability of stress-annealed gamma/gamma-prime lamellar structures were investigated using three nickel-base single-crystal alloys (the NASAIR 100 and two similar alloys, E and F, containing 5 and 10 wt pct Co, respectively) stress-annealed at 1000 C to form lamellae perpendicular to the applied stress. The rate of the lamellar thickening under various thermal and creep exposures was examined by SEM. For unstressed aging at 1100 C, the lamellar structures of the NASAIR and the E alloys exhibited continuous but slow lamellar coarsening, whereas the lamellae of the alloy F showed pronounced thickening plus spheroidization. Resistance to lamellar thickening was correlated with high magnitudes of lattice mismatch, which promoted a more regular lamellar structure and a finer spacing of misfit dislocations. Specimens which were tension-annealed prior to compressive creep testing exhibited an earlier onset of tertiary creep in comparison with only heat-treated specimens. This was associated with accelerated lamellar coarsening in the stress-annealed specimens.

Nathal, M. V.↗
NASA NTRS1987

Laser techniques in high-pressure geophysics

Laser techniques in conjunction with the diamond-anvil cell can be used to study high-pressure properties of materials important to a wide range of problems in earth and planetary science. Spontaneous Raman scattering of crystalline and amorphous solids at high pressure demonstrates that dramatic changes in structure and bonding occur on compression. High-pressure Brillouin scattering is sensitive to the pressure variations of single-crystal elastic moduli and acoustic velocities. Laser heating techniques with the diamond-anvil cell can be used to study phase transitions, including melting, under deep-earth conditions. Finally, laser-induced ruby fluorescence has been essential for the development of techniques for generating the maximum pressures now possible with the diamond-anvil cell, and currently provides a calibrated in situ measure of pressure well above 100 gigapascals.

Hemley, R. J.↗
NASA NTRS1988

Modified Withdrawal Slot Increases Silicon Production

New shape reduces ribbon breakage and resulting idle time. Shape for slot through which single-crystal silicon ribbon pulled from melt increases productivity. Reduces tendency of emerging ribbon to grow thin and break.

Piotrowsky, P. A.↗
NASA NTRS1988

Preferred Secondary Crystal Orientation For Turbine Blades

Directional solidification of single-crystal turbine blades, so secondary and primary, crystallographic orientation occurs on preferred axis, greatly increases resistance to fatigue. Technique lengthens lives of parts and reduces variation in longevity among parts.

Fritzemeier, Leslie G.↗
NASA NTRS1987

Development of a new generation of high-temperature composite materials

There are ever-increasing demands to develop low-density materials that maintain high strength and stiffness properties at elevated temperatures. Such materials are essential if the requirements for advanced aircraft, space power generation, and space station plans are to be realized. Metal matrix composites and intermetallic matrix composites are currently being investigated at NASA Lewis for such applications because they offer potential increases in strength, stiffness, and use temperature at a lower density than the most advanced single-crystal superalloys presently available. Today's discussion centers around the intermetallic matrix composites proposed by Lewis for meeting advanced aeropropulsion requirements. The fabrication process currently being used at Lewis to produce intermetallic matrix composites will be reviewed, and the properties of one such composite, SiC/Ti3Al+Nb, will be presented. In addition, the direction of future research will be outlined, including plans for enhanced fabrication of aluminide composites by the arc spray technique and fiber development by the floating-zone process.

Brindley, Pamela K.↗
NASA NTRS1988

Cumulative fatigue damage models

The problem of calculating expected component life under fatigue loading conditions is complicated by the fact that component loading histories contain, in many cases, cyclic loads of widely varying amplitudes. In such a case a cumulative damage model is required, in addition to a fatigue damage criterion, or life relationship, in order to compute the expected fatigue life. The traditional cumulative damage model used in design is the linear damage rule. This model, while being simple to use, can yield grossly unconservative results under certain loading conditions. Research at the NASA Lewis Research Center has led to the development of a nonlinear cumulative damage model, named the double damage curve approach (DDCA), that has greatly improved predictive capability. This model, which considers the life (or loading) level dependence of damage evolution, was applied successfully to two polycrystalline materials, 316 stainless steel and Haynes 188. The cumulative fatigue behavior of the PWA 1480 single-crystal material is currently being measured to determine the applicability of the DDCA for this material.

Mcgaw, Michael A.↗
NASA NTRS1987

Remote gate capacitance-voltage studies for noninvasive surface characterization

A measurement technique has been developed which allows noncontact capacitance-voltage measurements to be made using a gate electrode located remote from the semiconductor surface under study. With gate electrodes about 0.5 mm in diameter and gate to semiconductor separations of about 1500 A, it was possible to generate data entirely comparable to that obtained with integrated MIS structures but with the advantage that there was access directly to the free-semiconductor surface. This technique was applied to bulk single-crystal Si and InP samples.

Chang, R. R.↗
NASA NTRS1987

Effect of initial gamma prime size on the elevated temperature creep properties of single crystal nickel base superalloys

The influence of initial gamma-prime size and shape on the high-temperature creep properties of two single-crystal Ni-base superalloys was investigated. The two alloys were chosen to represent different magnitudes of gamma/gamma-prime lattice mismatch. A range of initial microstructures was produced by various quenching and aging treatments. Creep-rupture testing at 1000 C was performed under stresses where gamma-prime directionally coarsens to form gamma/gamma-prime lamellae in the early portion of the creep life. Both alloys exhibited a peak in creep resistance as a function of initial gamma-prime size. The peak corresponded to an initial microstructure consisting of cuboidal precipitates aligned along 001 line directions. These aligned cuboidal gamma-prime particles directionally coarsened into a relatively perfect lamellar gamma/gamma-prime structure in the early stages of creep, whereas the more irregularly shaped and distributed gamma-prime particles in both under- and overaged material formed more irregular lamellae with more imperfections. The alloy with a lower magnitude of mismatch was less sensitive to initial gamma-prime size and shape.

Nathal, M. V.↗
NASA NTRS1987

Electrochemical studies of thin films of conducting polymers and conducting polymer composites deposited on metal and semiconductor electrodes

Electrochemical studies indicate that poly(Isothianaphthene) or PITN, can be p-doped only. Electrochemical properties of PITN and Nafion-PITN in acetonitrile solutions containing tetra-phenyl Phosphonium chloride as supporting electrolyte are compared. In both cases, the electrochemical behavior of thin films are different from that of thick films. In addition, Nafion does not seem to alter the electrochemical properties of PITN. Cyclic voltammetric and chronocoulometric measurements were made to compute the diffusion coefficient of the counter ions. Electrochemical behavior of both PITN and Nafion-PITN in acetonitrile solution containing different counter ions are described. PITN, when electrochemically deposited, apparently neither passivates surface states present nor forms ohmic contacts with p-Si or p(+)Si single-crystal electrodes.

Nagasubramanian, G.↗
NASA NTRS1987

Isothermal dendritic growth - A low gravity experiment

The Isothermal Dendritic Growth Experiment has been designed to test dendritic growth theory at low undercoolings, under microgravity conditions in the Space Shuttle Cargo Bay-borne Material Science Laboratory. The experiment will be essentially autonomous, although limited in-flight interaction through a computer interface is planned. A crystal growth chamber able to yield oriented single-crystal dendritic growth will be incorporated; 'seeding' the chamber with a crystal of the requisite orientation will not in itself meet this requirement.

Glicksman, M. E.↗
NASA NTRS1987

Excimer laser annealing: A gold process for CZ silicon junction formation

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Wong, David C.↗
NASA NTRS1987

Silicon carbide - Progress in crystal growth

Recent progress in the development of two processes for producing large-area high-quality single crystals of SiC is described: (1) a modified Lely process for the growth of the alpha polytypes (e.g., 6H SiC) initially developed by Tairov and Tsvetkov (1978, 1981) and Ziegler et al. (1983), and (2) a process for the epitaxial growth of the beta polytype on single-crystal silicon or other substrates. Growth of large-area cubic SiC on Si is described together with growth of defect-free beta-SiC films on alpha-6H SiC crystals and TiC lattice. Semiconducting qualities of silicon carbide crystals grown by various techniques are discussed.

Powell, J. Anthony↗
NASA NTRS1987

High temperature isothermal and cyclic oxidation behavior of a single crystal Ni base superalloy

High-temperature oxidation behavior of a Ni-base superalloy, PWA1480, developed for use as single-crystal blades and vanes in advanced gas turbines, has been assessed. Isothermal and cyclic oxidation tests up to 200 hours were conducted at 1323, 1410, and 1473 K. The alloy was evaluated as to sample weight change, type of scale formed, type and amount of spall, and microstructural changes. The oxidation attack was more severe in cyclic as compared with isothermal oxidation. Also, enormous growth of the gamma-prime precipitate was observed at 1423 K during cyclic oxidation.

Hebsur, M. G.↗