Search NASA⌕ Search

SEARCH · Search NASA

Results for “topological devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Unconventional skyrmions in an interfacial frustrated triangular lattice

Magnetic skyrmions are spin topological textures of potential interest in spintronics-related data storage and processing devices. Here, in this work, we show the emergence of unconventional skyrmions in a geometrically frustrated triangular lattice on an inversion-symmetry-breaking two-dimensional electron gas substrate. Starting with a classical double-exchange mechanism, this generic interface induces exotic skyrmionic and unique noncoplanar magnetic states not observed in the equivalent square lattice interface. We study the model by deriving an effective spin Hamiltonian. Large scale classical Monte Carlo simulations provide a quantitative evidence for the emergence of these exotic magnetic states. We found that these chiral magnetic states exhibit a substantial and nonzero topological Hall conductivity. As potential material candidates, we propose Cr/MoS 2 , Fe/MoS 2 , and Fe/WSe 2 interfaces because they have the requisite underlying triangular lattice structures and large spin-orbit coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

NEXT-CRAB-0: a high pressure gaseous xenon time projection chamber with a direct VUV camera based readout

The search for neutrinoless double beta decay(0νββ) remains one of the most compelling experimentalavenues for the discovery in the neutrino sector.Electroluminescent gas-phase time projection chambers are wellsuited to 0νββ searches due to their intrinsicallyprecise energy resolution and topological event identificationcapabilities. Scalability to ton- and multi-ton masses requiresreadout of large-area electroluminescent regions with fine spatialresolution, low radiogenic backgrounds, and a scalable dataacquisition system. This paper presents a detector prototype thatrecords event topology in an electroluminescent xenon gas TPC viaVUV image-intensified cameras. This enables an extendable readoutof large tracking planes with commercial devices that reside almostentirely outside of the active medium. Following furtherdevelopment in intermediate scale demonstrators, this technique mayrepresent a novel and enlargeable method for topological eventimaging in 0νββ.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Probing fractional statistics in quantum simulators of spin liquid Hamiltonians

Recent advances in programmable quantum devices brought to the fore the intriguing possibility of using them to realise and investigate topological quantum spin liquid phases. This new and exciting direction brings about important research questions on how to probe and determine the presence of such exotic, highly entangled phases in a noisy quantum environment. One of the most promising tools is investigating the behaviour of the topological excitations, and in particular their fractional statistics. In this work we put forward a generic route to achieve this, and we illustrate it in the specific case of \mathbb{Z}_2 ℤ 2 topological spin liquids implemented with the aid of combinatorial gauge symmetry. We design a convenient architecture to study signatures of fractional statistics via quasiparticle interferometry, and we assess its robustness to diagonal and off-diagonal disorder, as well as to dephasing - effects that are generally pervasive in current quantum programmable devices. Interestingly, when turned on its head, our scheme provides a remarkably clear test of the “quantumness” of these devices, with robust signatures that crucially hinge on quantum coherence and quantum interference effects, and cannot be mimicked by classical stochastic processes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Alloying of Mn with Bi‐Rich Surfaces of Bi 2 Te 3 by Topotactic Reaction

Interfacing topological insulators (TI) with magnetic materials enables accessing quantum effects for advanced devices. The synthesis of such heterostructures faces challenges due to interlaying mixing and the often-complex multicomponent materials required to combine the desired properties. An alternative synthesis to direct growth is the modification of 2D materials by topotactic reactions to introduce new functionalities into pre-formed single or few-component 2D sheets. Here, the self-formation of bismuthene (a bilayer of Bi; Bi 2 ) is utilized by thermal decomposition of Bi 2 Te 3 as a platform to create novel 2D overlayers on the TI- substrate. Specifically, the Bi 2 layer is modified by reacting it with vapor deposited Mn in an attempt to induce magnetic properties. Scanning tunneling microscopy indicates that the Mn modified surface remains in a planar 2D layer, indicating the formation of an ordered Mn-rich surface layer. Density functional theory (DFT) is used to develop models of both the Bi-rich Bi 2 Te 3 surface as well as their subsequent Mn-modified structure. The DFT models indicate the possibility of magnetic ordering of the high spin Mn 2+ ions. The successful synthesis of planar MnBi alloys on a van der Waals material illustrates topotactic reactions as an alternative for creating novel layered heterostructures.

2D materials↗
DOE OSTI2025

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗
DOE OSTI2022

Correlated Hofstadter spectrum and flavour phase diagram in magic-angle twisted bilayer graphene

In magic-angle twisted bilayer graphene, the moiré superlattice potential gives rise to narrow electronic bands that support a multitude of many-body quantum phases. Further richness arises in the presence of a perpendicular magnetic field, where the interplay between moiré and magnetic length scales leads to fractal Hofstadter subbands. In this strongly correlated Hofstadter platform, multiple experiments have identified gapped topological and correlated states, but little is known about the phase transitions between them in the intervening compressible regimes. Here we simultaneously unveil sequences of broken-symmetry Chern insulators and resolve sharp phase transitions between competing states with different topological quantum numbers and different occupations of the spin-valley flavour. Our measurements determine the energy spectrum of interacting Hofstadter subbands in magic-angle twisted bilayer graphene and map out the phase diagram of flavour occupancy. In addition, we observe full lifting of the degeneracy of the zeroth Landau levels together with level crossings, indicating moiré valley splitting. We propose a unified flavour polarization mechanism to understand the intricate interplay of topology, interactions and symmetry breaking as a function of density and applied magnetic field in this system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Sn-InAs Nanowire Shadow-Defined Josephson Junctions

Hybrid superconductor–semiconductor platforms are foundational to advancing quantum information technologies, motivating the integration of materials with clean interfaces, robust superconductivity, and scalable architectures. Here, in this work, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with β-Sn shells. These nanowires extend in opposite in-plane directions, forming a self-aligned, criss-cross network. This enables the deterministic formation of nanowire-shadow Josephson junctions through angle-controlled, low-temperature Sn deposition. Structural characterization shows uniform polycrystalline β-Sn shells forming a sharp, diffusion-free interface with InAs. Low-temperature transport measurements reveal a hard induced superconducting gap ≈ 600 μeV, switching currents up to ≈ 500 nA, and parallel magnetic field resilience beyond 1T. These results establish β-Sn/InAs nanowire networks as a promising platform for superconducting qubits, low-noise microwave devices, and the exploration of exotic superconducting phases including triplet pairing and topological superconductivity.

B-Sn↗
DOE OSTI2022

Surface plasmons induce topological transition in graphene/α-MoO3 heterostructures

Abstract Polaritons in hyperbolic van der Waals materials—where principal axes have permittivities of opposite signs—are light-matter modes with unique properties and promising applications. Isofrequency contours of hyperbolic polaritons may undergo topological transitions from open hyperbolas to closed ellipse-like curves, prompting an abrupt change in physical properties. Electronically-tunable topological transitions are especially desirable for future integrated technologies but have yet to be demonstrated. In this work, we present a doping-induced topological transition effected by plasmon-phonon hybridization in graphene/α-MoO 3 heterostructures. Scanning near-field optical microscopy was used to image hybrid polaritons in graphene/α-MoO 3 . We demonstrate the topological transition and characterize hybrid modes, which can be tuned from surface waves to bulk waveguide modes, traversing an exceptional point arising from the anisotropic plasmon-phonon coupling. Graphene/α-MoO 3 heterostructures offer the possibility to explore dynamical topological transitions and directional coupling that could inspire new nanophotonic and quantum devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

A Compact Topological Microwave Isolator

A central goal of topological photonics has been to develop compact isolators using protected, non-reciprocal edge states. Furthermore, a recent demonstration of a ferrite-based microwave isolator leverages the magnon-induced topological photonic bandgap to achieve over 100 dB of isolation in a device smaller than a single free-space wavelength.

Magneto-optics↗
DOE OSTI2021

Experimental realization of classical Z 2 spin liquids in a programmable quantum device

We build and probe a Z 2 spin liquid in a programmable quantum device, the D-Wave DW-2000Q. Specifically, we observe the classical eight-vertex and six-vertex (spin ice) states and transitions between them. To realize this state of matter, we design a Hamiltonian with combinatorial gauge symmetry using only pairwise-qubit interactions and a transverse field, i.e., interactions which are accessible in this quantum device. The combinatorial gauge symmetry remains exact along the full quantum annealing path, landing the system onto the classical eight-vertex model at the endpoint of the path. The output configurations from the device allow us to directly observe the loop structure of the classical model. Moreover, we deform the Hamiltonian so as to vary the weights of the eight vertices and show that we can selectively attain the classical six-vertex (ice) model, or drive the system into a ferromagnetic state. Additionally, we present studies of the classical phase diagram of the system as a function of the eight-vertex deformations and effective temperature, which we control by varying the relative strengths of the programmable couplings, and we show that the experimental results are consistent with theoretical analysis. Finally, we identify additional capabilities that, if added to these devices, would allow us to realize Z 2 quantum spin liquids on which to build topological qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of kagome semimetal Mn 3 Ge

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn 3 Ge , an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall/Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D 0 19 Mn 3 Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn 3 Ge films is estimated to be 0.1 μV/K and is comparable to that in ferromagnetic Fe, despite Mn 3 Ge having a weak magnetization of ~ 3.5 m μ B / Mn at room temperature. In this work, the spin-mixing conductance is 90.5 nm – 2 at the Py / Mn 3 Ge interface, and the spin-Hall angle in Mn 3 Ge is estimated to be about eight times of that in Pt.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological electronic properties of silicon

The central role that materials play in human history is exemplified by the three-age division of prehistory into the stone, bronze, and iron ages. References to our present time as the information age or silicon age epitomizes the important role that this semiconducting material came to play in the development of computers and devices that permeate our daily lives. Here we show that the electronic states in silicon have nontrivial topological structures that are captured by a network of Berry flux lines that link at points of high symmetry in the Brillouin zone. Further, This complex network has ice-nodal points where fluxes satisfy ice rules, making silicon a nodal-chain insulator. Fixing the longitudinal momentum parallel to such flux lines yields a two-dimensional Dirac Hamiltonian for the transverse degrees of freedom. Similar to nodal-chain semimetals, we find drumheadlike states in the regions that are delimited by the projections of the bulk Berry flux network on the surface Brillouin zone.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electric control of a canted-antiferromagnetic Chern insulator

Abstract The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnBi 2 Te 4 is a rare platform for realizing a canted-antiferromagnetic (cAFM) Chern insulator with electrical control. We show that the Chern insulator state with Chern number C = 1 appears as the AFM to canted-AFM phase transition happens. The Chern insulator state is further confirmed by observing the unusual transition of the C = 1 state in the cAFM phase to the C = 2 orbital quantum Hall states in the magnetic field induced ferromagnetic phase. Near the cAFM-AFM phase boundary, we show that the dissipationless chiral edge transport can be toggled on and off by applying an electric field alone. We attribute this switching effect to the electrical field tuning of the exchange gap alignment between the top and bottom surfaces. Our work paves the way for future studies on topological cAFM spintronics and facilitates the development of proof-of-concept Chern insulator devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Topological band gap in intercalated epitaxial graphene

The study of functional manipulation of graphene is a critical subject, both for fundamental research and practical applications. In this study, we present that the intercalation of 5d transition metals into epitaxial graphene on SiC is a promising strategy for the realization of topologically nontrivial phases with a finite band gap in graphene. Employing first-principles calculations, grounded in density functional theory, we demonstrate that Re- and Ta-intercalated graphene evolve into two-dimensional topological insulators. These exhibit linear Dirac cones and quadratic bands with topological band gaps, respectively. The emergence of these topological states is attributed to the strong spin–orbit coupling strength of the intercalants. We show that the corresponding topological edge states persist within the finite bulk band gap, aligning with the bulk-boundary correspondence. Furthermore, we explore the spin splitting of the band structure, brought about by the inversion symmetry breaking and the spin–orbit coupling. Finally, our study underscores that the intercalation of graphene is an effective and a feasible approach for manipulating the band gap and the topological nature of graphene. Such intercalated graphene systems hold potential utility for spintronics and low-dimensional quantum device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Unraveling peculiar magnetism and band topology in Mn 3 Sb

Magnetic, pseudogap, topological, magnetostructural, and elastic behaviors of Mn 3 Sb have been unraveled. The ferrimagnetism (FIM) is described by localized and delocalized electron magnetism resulting in different magnetic moments on Mn atoms, confirming the neutron diffraction data. The identified magnetostructural properties are due to the non-equivalent Mn atoms in its lowest symmetry structure. The electronic structure is also unique due to variable valance states of Mn atoms. The magnetic moment (4.10 μB) of non-equivalent Mn1 atom is antiparallely aligned with the magnetic moments (2.34 μB) of Mn 2 and Mn 3 atoms. The estimated Curie temperature, TC, is higher than the room temperature, which may have above the room temperature applications in spintronic devices. The band structure and density of states (DOS) show the characteristics of band topology (opening of a gap in Dirac-like band features) and pseudo-gap, respectively, around the Fermi level. While expanding the unit cell, the tetragonal FIM ground state transforms to the cubic primitive FIM phase, however, the contraction transforms it to the L1 2 ferromagnetic (FM) phase. The estimated elastic constants, bulk to shear modulus ratio, and elastic anisotropy factor indicate that Mn3Sb exhibits mechanically stable, ductile, and anisotropic behaviors, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Conductivity space isotherm behavior in quantum anomalous Hall devices

The quantum Hall effect (QHE) has enhanced accessibility to measure and disseminate electrical units, owed in part to the recently redefined International System of Units in 2019. Graphene remains one of the preferred options to realize the ohm despite the limitations of high magnetic fields to produce a robust QHE. Topological insulators, on the other hand, show promise in providing quantized resistance via the quantum anomalous Hall effect, a phenomenon that removes the need for magnetic fields during operation. To optimize future devices for metrological applications, it is important to gain a better understanding of magnetically doped topological insulators like Cr-doped bismuth antimony telluride. The application of differential conductivity space analyses offers a more sensitive way to analyze the data and distinguish between 2D and 3D transport behaviors. This is particularly important in thin films, where the transition between 2D and 3D behavior can be subtle. The ability to confidently determine the dimensionality of the transport is crucial for selecting appropriate theoretical models for future device optimization. Furthermore, this work identifies variable range hopping as the dominant transport mechanism in the 2D regime using a rigorous statistical analysis (via the Bayes factor). These elements assist in the understanding of microscopic processes that govern charge transport in these materials.

Tran, N. T. M. [National Inst. of Standards and Te↗
DOE OSTI2020

Investigation of Various Transformer Topologies for HF Isolation Applications

High-frequency (HF) transformers are an essential part of many power electronic devices. The performance and behavior of HF transformers can greatly affect the efficiency and performance of all systems, particularly, from a parasitic parameter point of view. In this article, HF transformers' parasitic parameters, such as leakage inductances and parasitic capacitances, are analyzed using a novel analytical method, finite element method (FEM), and experimental measurements of different structures and winding arrangements. Also, the magnetic field, electric field, electric displacement field, and electric potential distribution within the transformers are simulated and analyzed. Four different HF transformers with E and U cores with different windings are designed and analyzed. Investigation outcomes help to classify structures according to the trade-off between leakage inductances and series parasitic capacitances. This information can later be used for the optimal selection and design of transformers as a function of their operating frequency for any power rating and voltage level. Moreover, 3-D FEM and experimental results validate the proposed methodology to be used for designing HF transformers in high-voltage/power applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Performance CMOS voltage level-up shifter circuit topology using pre-drive pull-up transistors

In a first example a voltage level-shifting device includes a level-shifting stage circuit. The level-shifting stage circuit includes a first level-shifting inverter circuit to invert a buffered input signal to drive a first internal node, a second level-shifting inverter circuit to invert a buffered inverted input signal to drive a second internal node, a first pre-drive circuit that receives the buffered inverted input signal, and drives the second internal node based on the state of the buffered inverted input signal, and a second pre-drive circuit that receives the buffered input signal, and drives the first internal node based on the state of the buffered input signal.

Armstrong, Paul R.↗