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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Effect of Nanoscale Ce 0.8 Gd 0.2 O 2–δ Infiltrant and Steam Content on Ni–(Y 2 O 3 ) 0.08 (ZrO 2 ) 0.92 Fuel Electrode Degradation during High-Temperature Electrolysis

Studies of Ni–yttria-stabilized zirconia (YSZ) fuel electrode degradation mechanisms in solid oxide electrolysis cells (SOECs) are complicated by the different possible Ni–YSZ microstructures and compositions, and the variations in the H 2 /H 2 O ratio encountered in an electrolysis stack. Here, in this study, we describe a life testing scheme aimed at providing survey results on degradation as a function of the H 2 O–H 2 composition, with life tests carried out at five different steam contents from 90% to 10%. A Ni–YSZ-supported symmetric cell geometry is employed both with and without infiltrated nanoscale gadolinia-doped ceria (GDC). Impedance spectroscopy is utilized to observe changes in electrochemical characteristics during the life test, and a transmission-line-based equivalent circuit is used to model the data. Post-test electrode microstructures were observed. The results suggest that the GDC infiltrant reduces the electrode polarization resistance and provides more stable electrode polarization over a range of conditions.

08 HYDROGEN↗
DOE OSTI2025

Statistical Analysis of Intertube Tunneling Contacts in the Macroscopic Electrical Conductivity of Carbon Nanotube Fibers

Here, this study investigates the influence of tunneling contact resistances between carbon nanotubes (CNTs) on electron transport and electrical conductivity of macroscopic carbon nanofibers (CNFs), which profoundly impacts the performance of CNT thin film electronics, CNF electron emitters and cathodes, and energy conversion and storage devices. Utilizing a self-consistent electrical contact model coupling a transmission line model with tunneling current, we calculate the contact resistances of a plethora of CNT-CNT contacts within a CNF fiber, which consists of aligned, densely packed CNTs. A statistical analysis is conducted, using Gaussian distributions to account for variations in contact lengths, tunneling gap distances, and single CNT aspect ratios, to calculate the CNT-CNT contact resistance and the overall resistance of CNT fiber. By scaling our model to a macroscopic level, our results are in good agreement with experimental measurements. Our calculation suggests that while increasing the contact overlap length diminishes individual CNT-CNT contact resistance, it could paradoxically increase macroscopic CNT fiber resistance for a given constant CNF mass density, which is due to that fact that a larger overlap length allows more CNTs to pack along an electrical conduction path per unit length, leading to more tunneling contact junctions connected in series and thus less number of parallel conduction paths within the fiber cross section. Increasing tunneling gap distance increases both individual contact and overall fiber resistance. This research provides a simple design tool for tailoring CNT fiber electrical properties to promote real-world applications using CNTs or similar low-dimensional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Approaching the Practical Conductivity Limits of Aerosol Jet Printed Silver

Previous efforts to directly write conductive metals have been narrowly focused on nanoparticle ink suspensions that require aggressive sintering (>200°C) and result in low-density, small-grained agglomerates with electrical conductivities <25% of bulk metal. Here, we demonstrate aerosol jet printing of a reactive ink solution and characterize high-density (93%) printed silver traces having near-bulk conductivity and grain sizes greater than the electron mean free path, while only requiring low temperature (80°C) treatment. We have developed a predictive electronic transport model which correlates the microstructure to the measured conductivity and identifies a strategy to approach the practical conductivity limit for printed metals. Our analysis of how grain boundaries and tortuosity contribute to electrical resistivity provides insight into the basic materials science that governs how an ink formulator or process developer might approach improving the conductivity. Transmission line measurements validate that electrical properties are preserved up to 20GHz, which demonstrates the utility of this technique for printed RF components. Finally, this work reveals a new method of producing robust printed electronics that retain the advantages of rapid prototyping and three-dimensional fabrication while achieving the performance necessary for success within the aerospace and communications industries.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Quantum communication with itinerant surface acoustic wave phonons

Abstract Surface acoustic waves are commonly used in classical electronics applications, and their use in quantum systems is beginning to be explored, as evidenced by recent experiments using acoustic Fabry–Pérot resonators. Here we explore their use for quantum communication, where we demonstrate a single-phonon surface acoustic wave transmission line, which links two physically separated qubit nodes. Each node comprises a microwave phonon transducer, an externally controlled superconducting variable coupler, and a superconducting qubit. Using this system, precisely shaped individual itinerant phonons are used to coherently transfer quantum information between the two physically distinct quantum nodes, enabling the high-fidelity node-to-node transfer of quantum states as well as the generation of a two-node Bell state. We further explore the dispersive interactions between an itinerant phonon emitted from one node and interacting with the superconducting qubit in the remote node. The observed interactions between the phonon and the remote qubit promise future quantum-optics-style experiments with itinerant phonons.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Electro-optical measurement of intense electric field on a high energy pulsed power accelerator

We describe a direct electro-optical approach to measuring a strong 118 MV/m narrow pulse width (~ 33 ns) electric field in the magnetically insulated transmission line (MITL) of a pulsed power accelerator. To date, this is the highest direct external electric field measured electro-optically in a pulsed power accelerator, and it is between two to three orders of magnitude higher than values reported in comparable high energy scientific experiments. The MITL electric field is one of the most important operating parameters in an accelerator and is critical to understanding the properties of the radiation output. However, accurately measuring these high fields using conventional pulsed power diagnostics is difficult due to the strength of interfering particles and fields. Our approach uses a free-space laser beam with a dielectric crystal sensor that is highly immune to electromagnetic interference and does not require an external calibration. Here we focus on device theory, operating parameters, laboratory and pulsed power accelerator experiments as well as challenges that were overcome in the measurement environment.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Overview of the ICRF heating system in SPARC

Ion Cyclotron Range of Frequencies (ICRF) heating is a critical system for the SPARC mission of demonstrating net positive fusion gain. In the first campaign, 20 MW of installed power at 120 MHz will be supplied to 10 four-strap antennas, arranged in poloidal pairs. The matching network is designed to accommodate for a range of loading conditions and a fast controller adjusts the matching during a pulse with frequency modulation of ±1 MHz. For the main L-mode scenario of the first experimental campaign, the power coupling and absorption is analysed in this work. Several feeding schemes are compared and limits on the amount of the total coupled power are evaluated. Coupling of the full 20 MW power is possible well within the limit of the peak electric field in the transmission line of 15 kV/cm. The 3 He minority and 2 nd harmonic T heating scheme is validated in full-wave modelling to be efficient for heating plasma in the SPARC L-mode Q>1 scenario, with dominant ion heating and efficient single-pass absorption. A range of ICRF wave parameters and minority concentration would be suitable for operation and allow tailoring the heating properties for plasma conditions and experimental objectives.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

The effect of high-power transient events on tungsten and tungsten coatings used for radio frequency launcher applications

High-temperature plasma-facing material coatings used for radio frequency (RF) launchers need to be robust enough to survive RF breakdown arcing or other transient events from the plasma (e.g., an edge localized mode) without causing a catastrophic failure of the coating. High-power transient effects are being explored by using an RF-induced vacuum arc to determine the robustness of tungsten coatings made by a variety of manufacturing methods. A 1/4-wavelength resonant section of vacuum transmission line terminated with an open circuit electrode structure with a well-defined electric field (30-60 kV/mm) produces repeatable arcing conditions. The initial focus is on tungsten as a plasma-facing material, including sintered tungsten, tungsten coatings on steel produced via physical vapor deposition (PVD), and functionally graded tungsten/steel coatings deposited by low-pressure plasma-spraying (LPPS). Thin PVD coatings (1-2 microns) fail catastrophically from an arc and result in severe delamination of the coating. The arc-induced damage of thicker coatings, such as those made via LPPS, tend to be restricted to the top few microns of the surface. Arcing often initiates on sharp surface microstructures and causes localized melting of tungsten at the surface of all the materials studied and results in resolidified melt pools with surface cracks. The resolidified surface results in a reduction in overall deuterium retention when exposed to typical RF plasma sheath conditions.

Caughman, John [ORNL] (ORCID:0000000206091164)↗
DOE OSTI2023

Development and modeling for a small-scale, rapidly heated high explosives initiation time (HEIT) experiment

Most small-scale assessments of explosive sensitivity, including the popular drop-weight impact test, convolute thermal and mechanical phenomena to the extent that it has been extremely challenging to decipher how an explosive ignites and propagates reactions. For instance, an impact generates heat through a range of dissipation mechanisms, which can in turn, depending on the reaction rates of the explosive, lead to chemical decomposition. To deconvolute the various contributions to the sub-shock initiation and propagation of explosive reactions, we describe the development and modeling of the High Explosives Initiation Time (HEIT) test - a new, small-scale, high-throughput experiment designed to rapidly heat milligram quantities of energetic materials confined within small diameter steel needles. Specifically, we have modeled and designed a 250 joule pulsed power system capable of rapidly delivering electrical current to the needles, resulting in rapid heat delivery to the sample. In conclusion, the energy deposition rate into the sample is controlled by different transmission line topologies. Modeling in COMSOL is performed to understand the energy required to heat up the explosive sample.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during metalorganic chemical vapor deposition through sequential short-duration gyrotron microwave heating cycles at temperatures of 1200–1350 °C. GaN is implanted with 1019 cm−3 Mg ions, capped with AlN, and annealed under 3 MPa N2 overpressure in 5 s heating cycles for less than 60 s total using a high-power gyrotron microwave heating source. Through I–V characterization, photoluminescence spectroscopy, and Raman spectroscopy, we study the evolution of electrical properties, optically active point defects, and material strain in response to implantation and annealing. For Mg-implanted samples, increasing annealing temperature is characterized by an increase in the PL substitutional Mg-related peak (UVL) relative to the shallow-donor vacancy-related peak (GL2). Through comparison of implanted and in situ doped samples, it is demonstrated that the origin of compensating VN lies primarily in implantation rather than degradation from the annealing process. Transmission line measurements and diode I–V measurements show a sheet resistance of 1083 kΩ/□ and a hole concentration of 1.23 × 1015 cm−3, respectively, in the Mg-implanted material annealed at 1350 °C. We conclude that temperature-cycled gyrotron annealing at 1350 °C decreases implant-induced compensating point defects and activates Mg to obtain selective p-type conduction.

Meyers, V. (ORCID:0000000176731553)↗
DOE OSTI2020

Electron density measurement using a partially covered hairpin resonator in an inductively coupled plasma

Hairpin probes are used to determine electron densities via measuring the shift of the resonant frequency of the probe structure when immersed in a plasma. This manuscript presents new developments in hairpin probe hardware and theory that have enabled measurements in a high electron density plasma, up to approximately 10 12 cm -3 , corresponding to a plasma frequency of about 9 GHz. Hardware developments include the use of both quarter-wavelength and three-quarter-wavelength partially covered hairpin probes in a transmission mode together with an easily reproducible implementation of the associated microwave electronics using commercial off-the-shelf components. The three-quarter-wavelength structure is operated at its second harmonic with the purpose of measuring higher electron densities. New theory developments for interpreting the probe measurements include the use of a transmission line model to find an accurate relationship between the resonant frequency of the probe and the electron density, including effects of partially covering the probes with epoxy. Measurements are taken in an inductively coupled plasma sustained in argon at pressures below 50 mTorr. Results are compared with Langmuir probe and interferometry measurements.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Characterization of self-magnetic pinch radiographic diode performance on RITS-6 at Sandia National Laboratories. II. Coupling between the inductive voltage adder and the SMP load

The self-magnetic pinch (SMP) diode is a type of radiographic diode used to generate an intense electron beam for radiographic applications. At Sandia National Laboratories, SMP was the diode load for the six-cavity radiographic integrated test stand inductive voltage adder (IVA) driver operated in a magnetically insulated transmission line (MITL). The MITL contributes a flow current in addition to the current generated within the diode itself. Extensive experiments with a MITL of 40Ω load impedance [T. J. Renk et al., Phys. Plasmas 29, 023105 (2022)] indicate that the additional flow current leads to results similar to what might be expected from a conventional high-voltage interface driver, where flow current is not present. However, when the MITL flow impedance was increased to 80 Ω, qualitatively different diode behavior was observed. This includes large retrapping waves suggestive of an initial coupling to low impedance as well as diode current decreasing with time even as the total current does not. A key observation is that the driver generates total current (flow + diode) consistent with the flow impedance of the MITL used. The case is made in this paper that the 80Ω MITL experiments detailed here can only be understood when the IVA-MITL-SMP diode is considered as a total system. Additionally, the constraint of fixed total current plus the relatively high flow impedance limits the ability of the diode (whether SMP or other type) to act as an independent load. An unexpected new result is that in tracking the behavior of the electron strike angle on the converter as a function of time, we observed that the conventional cIV x “Radiographic” radiation scaling (where x~2.2) begins to break down for voltages above 8 MV, and cubic scaling is required to recover accurate angle tracking.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗
DOE OSTI2022

Impact of power flow on Z-pinch loads

Magnetically insulated transmission lines (MITLs) are used to deliver tens of MA to a Z-pinch load. The MITLs suffer current losses due to contaminant plasma located in the anode–cathode gap which is swept toward the load along the power flow. The swept up contaminant plasma can deposit mass and energy onto the load resulting in deformations or the seeding of macroscopic instabilities. This paper discusses 2D fully kinetic simulations of the contaminant plasma evolution which predict the current losses and the flux of mass and energy onto the load. Furthermore, the effects of a dynamic, i.e., imploding, load are shown to increase both the current loss and the mass and energy flux. The MITL used is a conical, radially converging design which is a feature common to MA-scale Z-pinch accelerators.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Mutually magnetically insulated two-species Brillouin flow

In this work, we use the Brillouin flow analytic framework to examine the physics of Magnetically Insulated Transmission Lines (MITL). Here, we derive a model applicable to any particle species, including both positive and negative ions, in planar and cylindrical configurations. We then show how to self-consistently solve for two-species simultaneously, using magnetically insulated electrons and positive ions as an example. We require both layers to be spatially separated and magnetically insulated (mutually magnetically insulated); for a 7.5 cm gap with a 2 MV bias voltage, this condition requires magnetic fields in excess of 2.73 T. We see a close match between mutually insulated MITL performance and “superinsulated” (high degree of magnetic insulation) electron-only theory, as may be expected for these high magnetic fields. However, the presence of ions leads to several novel effects: (1) Opposite to electron-only theory, total electron currents increase rather than decrease as the degree of magnetic insulation becomes stronger. The common assumption of neglecting electrons for superinsulated MITL operation must be revisited when ions are present—we calculate up to 20× current enhancement. (2) The electron flow layer thickness increases up to double, due to ion space-charge enhancement. (3) The contributions from both ions and electrons to the MITL flow impedance are calculated. The flow impedance drops by over 50% when ions fill the gap, which can cause significant reflections at the load if not anticipated and degrade performance. Additional effects and results from the inclusion of the ion layer are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Broadband bandpass Purcell filter for circuit quantum electrodynamics

In circuit quantum electrodynamics, qubits are typically measured using dispersively coupled readout resonators. Coupling between each readout resonator and its electrical environment, however, reduces the qubit lifetime via the Purcell effect. Inserting a Purcell filter counters this effect while maintaining high readout fidelity but reduces measurement bandwidth and, thus, limits multiplexing readout capacity. In this Letter, we develop and implement a multi-stage bandpass Purcell filter that yields better qubit protection while simultaneously increasing measurement bandwidth and multiplexed capacity. Here, we report on the experimental performance of our transmission-line-based implementation of this approach, a flexible design that can easily be integrated with current scaled-up, long coherence time superconducting quantum processors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Tuning the inductance of Josephson junction arrays without SQUIDs

It is customary to use arrays of superconducting quantum interference devices (SQUIDs) for implementing magnetic field-tunable inductors. Here, we demonstrate an equivalent tunability in a (SQUID-free) array of single Al/AlOx/Al Josephson tunnel junctions. With the proper choice of junction geometry, a perpendicularly applied magnetic field bends along the plane of the superconductor and focuses into the tunnel barrier region due to a demagnetization effect. Consequently, the Josephson inductance can be efficiently modulated by the Fraunhofer-type supercurrent interference. The elimination of SQUIDs not only simplifies the device design and fabrication but also facilitates a denser packing of junctions, and, hence, a higher inductance per unit length. As an example, we demonstrate a transmission line, the characteristic impedance of which is field-tuned in the range of 4–8 kΩ, centered around the important value of the resistance quantum h/(2e)2≈6.5 kΩ.

Physics↗
DOE OSTI2023

Magneto-optical measurement of magnetic field and electrical current on a short pulse high energy pulsed power accelerator

We describe a direct magneto-optical approach to measuring the magnetic field driven by a narrow pulse width (<10 ns), 20 kA electrical current flow in the transmission line of a high energy pulsed power accelerator. The magnetic field and electrical current are among the most important operating parameters in a pulsed power accelerator and are critical to understanding the properties of the radiation output. However, accurately measuring these fields and electrical currents using conventional pulsed power diagnostics is difficult due to the strength of ionizing radiation and electromagnetic interference. Our approach uses a fiber coupled laser beam with a rare earth element sensing crystal sensor that is highly resistant to electromagnetic interference and does not require external calibration. Here, we focus on device theory, operating parameters, results from an experiment on a high energy pulsed power accelerator, and comparison to a conventional electrical current shunt sensor.

42 ENGINEERING↗
DOE OSTI2024

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.

Physics↗