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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

A Relief Zone Architecture for Enhanced Durability of Ultrathin Membranes in Electrochemical Conversion Devices

Premature cell failures in electrochemical conversion systems often result when membrane electrode assemblies (MEAs) are prepared with ultra-thin (= 15 micrometer-thick) polymer electrolyte membranes (PEMs). These high-performance PEMs are susceptible to mechanical degradation from stress concentrations arising from component and device-level integration. Herein, a relief zone was developed to mitigate mechanical degradation by alleviating excess and non-uniform compression across the active area. Relief zones, created through the ablation of carbonaceous diffusion material achieves a seamless adaptation across a range of MEA dimensions and electrochemical applications without need for costly hardware modifications. This concept was demonstrated using fuel cells as a case study. Accelerated stress test (AST) validations yielded a 6-fold improvement for MEAs prepared with relief zones (i.e., lifetime approximately 1500 h) compared to those fabricated using conventional edge-protection techniques, showcasing the utility of this technique in decoupling integration and device-level engineering effects from intrinsic material limitations for durable electrochemical devices.

14 SOLAR ENERGY↗
NASA NTRS1971

Ultrathin gate valve for high vacuum operation

Thin, compact, high-vacuum gate valve used to join two vacuum systems together demonstrates multiple operation reliability. Valve measurements and non-protruding handle make valve usable in confined areas.

Ugiansky, R. J.↗
NASA NTRS1972

Exploratory development and services for preparing and examining ultrathin polished sections of lunar rocks and particulates, part 2

General principles and details of the actual procedure are presented for the preparator. Some background information is given on why certain lapping, polishing, and gluing procedures are needed. It is directed toward the innovative preparator who wishes to further refine procedures or to use some of his own techniques for some steps in the processing sequence. Specific details on the single procedure found to be most successful for lunar dense rocks, breccias, and particulates are outlined. A complete listing of equipment and supplies is appended.

Beauchamp, R. H.↗
NASA NTRS1978

The production of ultrathin polyimide films for the solar sail program and Large Space Structures Technology (LSST): A feasibility study

Polyimide membranes of a thickness range from under 0.01 micron m to greater than 1 micron m can be produced at an estimated cost of 50 cents per sq m (plus the cost of the polymer). The polymer of interest is dissolved in a solvent which is solube in water. The polymer or casting solution is allowed to flow down an inclined ramp onto a water surface where a pool of floating polymer develops. The solvent dissolves into the water lowering the surface tension of the water on equently, the contact angle of the polymer pool is very low and the edge of the pool is very thin. The solvent dissolves from this thin region too rapidly to be replenished from the bulk of the pool and a solid polymer film forms. Firm formation is rapid and spontaneous and the film spreads out unaided, many feet from the leading edge of the pool. The driving force for this process is the exothermic solution of the organic solvent from the polymer solution into the water.

Forester, R. H.↗
NASA NTRS1978

Effects of ultrathin oxides in conducting MIS structures on GaAs

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Childs, R. B.↗
NASA NTRS1984

Progress in developing ultrathin solar cell blanket technology

A program was conducted to develop technologies for welding interconnects to three types of 50-micron-thick, 2 by 2-cm solar cells. Parallel-gap resistance welding was used for interconnect attachment. Weld schedules were independently developed for each of the three cell types and were coincidentally identical. Six 48-cell modules were assembled with 50-micron (nominal) thick cells, frosted fused-silica covers, silver-plated Invar interconnectors, and four different substrate designs. Three modules (one for each cell type) have single-layer Kapton (50-micron-thick) substrates. The other three modules each have a different substrate (Kapton-Kevlar-Kapton, Kapton-graphite-Kapton, and Kapton-graphite-aluminum honeycomb-graphite). All six modules were subjected to 4112 thermal cycles from -175 to 65 C (corresponding to over 40 years of simulated geosynchronous orbit thermal cycling) and experienced only negligible electrical degradation (1.1 percent average of six 48-cell modules).

Patterson, R. E.↗
NASA NTRS1991

Making Ultrathin Solar Cells

Process produces extremely thin silicon solar cells - only 50 micrometers or less in thickness. Electrons and holes have less opportunity to recombine before collected at cell surfaces. Efficiency higher and because volume of silicon small, less chance of radiation damage in new cells. Initial steps carried out at normal thickness to reduce breakage and avoid extra cost of special handling. Cells then thinned mechanically and chemically. Final cell includes reflective layer on back surface. Layer bounces unabsorbed light back into bulk silicon so it absorbs and produces useful electrical output.

Cogan, George W.↗
NASA NTRS1991

Absorption and photoluminescence of ultrathin pseudomorphic InAs/GaAs quantum wells

Absorption data are presented for 2-4-monolayer InAs/GaAs single quantum wells obtained at 77 K using a polarization-based measurement technique. The special contribution of the optical loss features arising from bulk GaAs was minimized using the polarization selectivity of absorption in single quantum wells. The double structure observed in the spectra is attributed to transitions involving confined heavy holes and both confined and unconfined electron states.

Ksendzov, A.↗
NASA NTRS2000

Effect of Oxide Interface Roughness on the Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxides

In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.

Asenov, Asen↗
DOE OSTI2020

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

42 ENGINEERING↗
DOE OSTI2020

Ultrathin film lasing

Technologies are described for methods to fabricate lasers to amplify light. The methods may comprise depositing nanoparticles on a substrate. The length, width, and height of the nanoparticles may be less than 100 nm. The methods may further comprise distributing the nanoparticles on the substrate to produce a film. The nanoparticles in the film may be coupled nanoparticles. The coupled nanoparticles may be in disordered contact with each other within the film. The distribution may be performed such that constructive interference of the light occurs by multiple scattering at the boundaries of the coupled nanoparticles within the film. The methods may comprise exposing the film to a power source.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Ultrathin, polarization-independent, achromatic metalens for focusing visible light

An optical device includes a titanium dioxide substrate layer on a quartz base of a substrate. The substrate is configured to focus light in visible wavelength spectrum of 400 nm to 700 nm. The substrate comprises a first zone and a second zone. In some embodiments, the first zone and the second zone are concentric circles. A plurality of resonators are disposed on the substrate, the plurality of resonators comprising a first plurality corresponding to the first zone and a second plurality corresponding to the second zone. Each resonator is comprised of a dielectric material with a defined thickness “t” in the range of 30 nm to 300 nm. Each resonator has a radius “r” in the range of 30 nm to 300 nm and a gap “g” between adjacent resonators in the range of 5 nm to 200 nm. The first plurality of resonators in the first zone have a first radius within a first radius range that is different from a second radius range of the second plurality of resonators in the second zone. The plurality of resonators form a metasurface that defines at least in part an ultra-thin achromatic lens of the optical device.

47 OTHER INSTRUMENTATION↗