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At least 271 records · Page 15

An Outburst Scenario for the X-ray Spectral Variability in 3C 111

We present a combined Suzaku and Swift BAT broad-band E=0.6-200 keV spectral analysis of three 3C 111 observations obtained in 2010. The data are well described with an absorbed power-law continuum and a weak (R approximately equal to 0.2) cold reflection component from distant material. We constrain the continuum cutoff at E(sub C) approximately equal to 150- 200 keV, which is in accordance with X-ray Comptonization corona models and supports claims that the jet emission is only dominant at much higher energies. Fe XXVI Ly alpha emission and absorption lines are also present in the first and second observations, respectively. The modelling and interpretation of the emission line is complex and we explore three possibilities. If originating from ionized disc reflection, this should be emitted at r(sub in) greater than or equal to 50 r(sub g) or, in the lamp-post configuration, the illuminating source should be at a height of h greater than or equal to 30 r(sub g) over the black hole. Alternatively, the line could be modeled with a hot collisionally ionized plasma with temperature kT = 22.0(sup +6.1)(sub −3.2) keV or a photo-ionized plasma with logXi=4.52(sup +0.10)(sub −0.16) erg per second cm, and column density N(sub H) greater than 3×10(sup 23) per square centimeter. However, the first and second scenarios are less favored on statistical and physical grounds, respectively. The blue-shifted absorption line in the second observation can be modelled as an ultra-fast outflow (UFO) with ionization parameter logXi=4.47(sup +0.76) (sub −0.04) erg per second cm, column density NH=(5.3(sup +1.8)(sub −1.3))×10(sup 22) per square centimeter and outflow velocity v(sub out) = 0.104+/-0.006c. Interestingly, the parameters of the photoionized emission model remarkably match those of the absorbing UFO, supporting the possibility that the same material could be responsible for both emission and absorption. We suggest an outburst scenario in which an accretion disc wind, initially lying out of the line of sight and observed in emission, then crosses our view to the source and it is observed in absorption as a mildly-relativistic UFO.

Outburst↗

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

The off-axis approach to SiC epitaxial growth has not prevented many substrate crystal defects from propagating into SiC epilayers, and does not permit the realization of SiC heteropolytype devices. This paper reviews recent advancements in SiC epitaxial growth that begin to overcome the above shortcomings for arrays of device-sized mesas patterned into on-axis 4H/6HSiC wafers. These on-axis mesa growth techniques have produced 4H/6H-SiC homoepilayers and 3C-SiC heteroepilayers with substantially lower dislocation densities. The results should enable improved homojunction and heterojunction silicon carbide prototype devices.

Neudeck, P. G.↗

The Complex Circumnuclear Environment of the Broad-Line Radio Galaxy 3C 390.3 Revealed by Chandra HETG

We present the first high spectral resolution X-ray observation of the broad-line radio galaxy 3C 390.3 obtained with the high-energy transmission grating spectrometer on board the Chandra X-ray Observatory. The spectrum shows complex emission and absorption features in both the soft X-rays and Fe K band. We detect emission and absorption lines in the energy range E = 700-1000 eV associated with ionized Fe L transitions (Fe XVIIXX). An emission line at the energy of E approximately equal to 6.4 keV consistent with the Fe K alpha is also observed. Our best-fit model requires at least three different components: (i) a hot emission component likely associated with the hot interstellar medium in this elliptical galaxy with temperature kT = 0.5 +/- 0.1 keV; (ii) a warm absorber with ionization parameter log Epislon = 2.3 +/- 0.5 erg s(exp 1) cm, column density logN(sub H) = 20.7 +/- 0.1 cm(exp -2), and outflow velocity v(sub out) less than 150 km s(exp -1); and (iii) a lowly ionized reflection component in the Fe K band likely associated with the optical broad-line region or the outer accretion disk. These evidences suggest the possibility that we are looking directly down the ionization cone of this active galaxy and that the central X-ray source only photoionizes along the unobscured cone. This is overall consistent with the angle-dependent unified picture of active galactic nuclei.

black hole physics↗

Multiwavelength Observations of a Dramatic High Energy Flare in the Blazar 3C 279

Multiwavelength observation of blazars in conjuction with EGRET points have been obtained at several epochs. However, either the monitoring was to sparse or the source was not active during the campaign, so that detections of correlated mulitwavelentgh variabiltiy on short times scales are tentaive (3C 279, Maraschi et al. 1994; Hartman et al. 1996; OJ 287, Webb et al. 1996; PKS 0537-441, Pian et al. 1997).

gamma↗

Overview of the 2021 SDP 3C Citation Context Classification Shared Task

This paper provides an overview of the 2021 3C Citation Context Classification shared task. The second edition of the shared task was organised as part of the 2nd Workshop on Scholarly Document Processing (SDP 2021). The task is composed of two subtasks: classifying citations based on their (Subtask A) purpose and (Subtask B) influence. As in the previous year, both tasks were hosted on Kaggle and used a portion of the new ACT dataset. A total of 22 teams participated in Subtask A, and 19 teams competed in Subtask B. All the participated systems were ranked based on their achieved macro f-score. The highest scores of 0.26973 and 0.60025 were reported for sub-task A and B, respectively.

Kunnath, Suchetha N.↗

Effects of point defects on oxidation of 3C–SiC

The influence of implantation-induced point defects (PDs) on SiC oxidation is investigated via molecular dynamics simulations. PDs generally increase the oxidation rate of crystalline grains. Particularly, accelerations caused by Si antisites and vacancies are comparable, and followed by Si interstitials, which are higher than those by C antisites and C interstitials. However, in the grain boundary (GB) region, defect contribution to oxidation is more complex, with C antisites decelerating oxidation. Here, the underlying reason is the formation of a C-rich region along the oxygen diffusion pathway that blocks the access of O to Si and thus reduces the oxidation rate, as compared to the oxidation along a GB without defects.

36 MATERIALS SCIENCE↗

Electronic stopping in molecular dynamics simulations of cascades in 3C–SiC

Here, we investigate the effect of the electronic stopping power on defect production due to ion irradiation of cubic silicon carbide using molecular dynamics simulations. We simulate 20 keV and 30 keV Si and C ions, with and without the electronic energy loss. The results show that the electronic stopping effects are more profound in the case of C irradiation, where the ratio of the electronic energy loss S e to the nuclear energy loss S n is much larger compared to the ratio for Si ions. These findings indicate that this ratio plays a role in the effect of the electronic stopping on ion irradiation.

36 MATERIALS SCIENCE↗

Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 3c Raw Data

XPS after 0hr of chronoampometry. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra DLD system at a takeoff angle of 0° relative to the surface normal. An Al Kα source (hν = 1486.6 eV) was used to excite the core level electrons. Pass energy of 20 eV was used for the narrow scan of core levels and valence band spectra, and step size of 0.05 eV and 0.025 eV, respectively. The Spectral fitting was conducted using CasaXPS analysis software. The binding energy scales of all core levels were corrected to the N 1s of Ga – N bond at 397.8 eV. XPS O1s core level spectra from as-received Si/GaN sample, and deconvolution shows O - Ga bond and OH - H2O bond.

photocathode↗