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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15

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NASA NTRS1981

Activation energies of thermal annealing of radiation-induced damage in n- and p-channels of CMOS integrated circuits. II

The procedures described by Danchenko et al. (1980) are applied to devices of RCA's Z-process (100,000 rad-hard). A thermal annealing investigation of the Z-process reveals an annealing behavior of the p-channels that is anomalous when compared with the p-channels of the commercial and J-processes. It is noted that the thermal annealing-induced shift of the threshold potential extends far below the original value; this necessitated the development of a new mathematical treatment, the treatment presented in the paper.

Danchenko, V.↗

NASA NTRS1982

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Danchenko, V.↗

NASA NTRS1984

Excimer laser annealing to fabricate low cost solar cells

The objective is to show whether or not pulsed excimer laser annealing (PELA) of ion-implanted junctions is a cost effective replacement for diffused junctions in fabricating crystalline silicon solar cells. The preliminary economic analysis completed shows that the use of PELA to fabricate both the front junction and back surface field (BSF) would cost approximately 35 cents per peak watt (Wp), compared to a cost of 15 cents/Wp for diffusion, aluminum BSF and an extra cleaning step in the baseline process. The cost advantage of the PELA process depends on improving the average cell efficiency from 14% to 16%, which would lower the overall cost of the module by about 15 cents/Wp. An optimized PELA process compatible with commercial production is to be developed, and increased cell efficiency with sufficient product for adequate statistical analysis demonstrated. An excimer laser annealing station was set-up and made operational. The first experiment used 248 nm radiation to anneal phosphorus implants in polished and texture-etched silicon.

Source record↗

NASA NTRS1984

Thermoluminescence and the shock and reheating history of meteorites. II - Annealing studies of the Kernouve meteorite

Samples of the unshocked, equilibrated chondrite, Kernouve (H6), have been annealed for 1-100 hours at 500-1200 C, their thermoluminescence sensitivity measured and Na, K, Mn, Ca, and Sc determined by instrumental neutron activation analysis. The TL sensitivity decreased with temperature until by 1000 C it had fallen by 40 percent. The process responsible has an activation energy of 8 kcal/mole and probably involves diffusion. Samples annealed 1000-1200 C had TL sensitivities 0.01 times the unannealed values, most of the decrease occurring at 1100 C. This process has an activation energy of 100 kcal/mole and is probably related to the melting of the TL phosphor, feldspar, with some decomposition and loss of Cs, Na and K. Meteorites whose petrography indicates heating above 1100 C by natural shock heating events (shock facies d-f), have TL sensitivities similar to samples annealed above 1100 C.

Sears, D. W. G.↗

NASA NTRS1986

Effect of annealing history on free volume in thermoplastics

Two different types of thermoplastic glassy polymers have been investigated for the effects of thermal annealing on their free volumes. It has been observed that free volumes in glassy polymers decrease asymptotically to a steady level after about four thermal anneals lasting for 24 hours at a temperature about 50 C below their glass transition temperatures. These results indicate that composites incorporating properly annealed thermoplastic matrices may not experience any additional internal stresses due to subsequent thermal excursions experienced while in service.

Singh, J. J.↗

NASA NTRS1985

Excimer laser annealing for fabrication of low-cost solar cells

Pulsed excimer laser annealing was successfully performed using a 50 w laser. Both polished and texturized cells were tried, however, there are serious problems with nonuniformity on texturized cells. A number of cells were produced and compared to diffusion furnace annealed cells. There was no clear economic advantage in using an excimer laser and there was a small penalty on average efficiency. The conclusion was that the excimer laser anneal process must be able to produce superior cells to be considered as a viable process option.

Spitzer, M. B.↗

NASA NTRS1986

Chemical and physical studies of type 3 chondrites. VII - Annealing studies of the Dhajala H3.8 chondrite and the thermal history of chondrules and chondrites

Samples of the Dhajala meteorite were annealed at 600-1000 C for 1, 2, 10, 20 and 100 h and their thermoluminescence (TL) properties were measured. After annealing at less than 900 deg, the TL sensitivity decreased by a factor of two; at higher temperatures, it fell by an order of magnitude. Data indicate that the annealing treatment caused the low-temperature feldspar in Dhajala to be converted to feldspar of a high-temperature (disordered) form. Low-temperature feldspar was found in the meteorite's TL-sensitive chondrules which comprised about 20 percent of those separated. It is suggested that these chondrules suffered greater crystallization of their mesostasis than the other chondrules, and equilibrated to lower temperatures. Based on TL data, there appears to be no relationship between post-metamorphic cooling rate and petrologic type for the 3.5-3.9 chondrites.

Keck, B. D.↗

NASA NTRS1987

A parallel simulated annealing algorithm for standard cell placement on a hypercube computer

A parallel version of a simulated annealing algorithm is presented which is targeted to run on a hypercube computer. A strategy for mapping the cells in a two dimensional area of a chip onto processors in an n-dimensional hypercube is proposed such that both small and large distance moves can be applied. Two types of moves are allowed: cell exchanges and cell displacements. The computation of the cost function in parallel among all the processors in the hypercube is described along with a distributed data structure that needs to be stored in the hypercube to support parallel cost evaluation. A novel tree broadcasting strategy is used extensively in the algorithm for updating cell locations in the parallel environment. Studies on the performance of the algorithm on example industrial circuits show that it is faster and gives better final placement results than the uniprocessor simulated annealing algorithms. An improved uniprocessor algorithm is proposed which is based on the improved results obtained from parallelization of the simulated annealing algorithm.

Jones, Mark Howard↗

NASA NTRS1987

Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

Kang, C. H.↗

NASA NTRS1987

Rapid thermal annealing of indium phosphide compound semiconductors

The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

Biedenbender, Michael D.↗

NASA NTRS1988

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.

Radhakrishnan, G.↗

NASA NTRS1989

Minimizing distortion and internal forces in truss structures by simulated annealing

Inaccuracies in the length of members and the diameters of joints of large truss reflector backup structures may produce unacceptable levels of surface distortion and member forces. However, if the member lengths and joint diameters can be measured accurately it is possible to configure the members and joints so that root-mean-square (rms) surface error and/or rms member forces is minimized. Following Greene and Haftka (1989) it is assumed that the force vector f is linearly proportional to the member length errors e(sub M) of dimension NMEMB (the number of members) and joint errors e(sub J) of dimension NJOINT (the number of joints), and that the best-fit displacement vector d is a linear function of f. Let NNODES denote the number of positions on the surface of the truss where error influences are measured. The solution of the problem is discussed. To classify, this problem was compared to a similar combinatorial optimization problem. In particular, when only the member length errors are considered, minimizing d(sup 2)(sub rms) is equivalent to the quadratic assignment problem. The quadratic assignment problem is a well known NP-complete problem in operations research literature. Hence minimizing d(sup 2)(sub rms) is is also an NP-complete problem. The focus of the research is the development of a simulated annealing algorithm to reduce d(sup 2)(sub rms). The plausibility of this technique is its recent success on a variety of NP-complete combinatorial optimization problems including the quadratic assignment problem. A physical analogy for simulated annealing is the way liquids freeze and crystallize. All computational experiments were done on a MicroVAX. The two interchange heuristic is very fast but produces widely varying results. The two and three interchange heuristic provides less variability in the final objective function values but runs much more slowly. Simulated annealing produced the best objective function values for every starting configuration and was faster than the two and three interchange heuristic.

Kincaid, Rex K.↗

NASA NTRS1992

Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells

Defect behavior, observed by deep level transient spectroscopy (DLTS), is used to predict carrier removal and the effects of simultaneous electron irradiation and injection annealing of the performance of InP solar cells. For carrier removal, the number of holes trapped per defect is obtained from measurements of both carrier concentrations and defect concentrations during an isochronal anneal. In addition, from kinetic considerations, the behavior of the dominant defect during injection annealing is used to estimate the degradation expected from exposure to the ambient electron environment in geostationary orbit.

Weinberg, I.↗

NASA NTRS1991

Optimal actuator placement on an active reflector using a modified simulated annealing technique

The development of a lightweight actuation system for maintaining the surface accuracy of a composite honeycomb panel using piezoelectric actuators is discussed. A modified simulated annealing technique is used to optimize the problem with both combinatorial and continuous criteria and with inequality constraints. Near optimal solutions for the location of the actuators, using combinatorial optimization, and for the required actuator forces, employing continuous optimization, are sought by means of the modified simulated annealing technique. The actuator locations are determined by first seeking a near optimum solution using the modified simulated annealing technique. The final actuator configuration consists of an arrangement wherein the piezoelectric actuators are placed along six radial lines. Numerical results showing the achievable surface correction by means of this configuration are presented.

Kuo, Chin-Po↗

NASA NTRS1951

Resolution of annealing experiments for the study of nonequilibrium states

The two techniques for conducting annealing experiments for the purpose of determining the distribution of atoms of a solid among non equilibrium states are considered. Related definitions for resolving power for annealing with steadily rising temperature and for annealing at a series of fixed temperatures are given. The necessary separation of activation energies for the resolution of two different non equilibrium states is found to be greater in the case of a steadily rising temperature, but of the order of 10 percent of the activation energy for both techniques. The resolving power in the case of a steadily rising temperature is independent of the rate of temperature rise.

SOLIDS↗

NASA NTRS1993

A detailed study of the photo-injection annealing of thermally diffused InP solar cells

A detailed analysis of the annealing of thermally diffused InP solar cells fabricated by the Nippon Mining Co. is presented. The cells were irradiated with 1 MeV electrons, and the induced degradation is measured using deep level transient spectroscopy and low temperature (86 K) IV measurements. Clear recovery of the photovoltaic parameters is observed during low temperature (T is less than 300 K) solar illuminations (1 sun, AMO) with further recovery at higher temperatures (300 less than T less than 500 K). For example, the output of a cell which was irradiated up to a fluence of 1 x 10(exp 16) cm(sup -2) was observed to recover to within 5 percent of the pre-irradiation output. An apparent correlation between the recovery of I(sub sc) and the annealing of the H4 defect and of the minority carrier trapping centers is observed. An apparent correlation between the recovery of VO, and the annealing of the H5 defect is also observed. These apparent correlations are used to develop a possible model for the mechanism of the recovery of the solar cells.

Walters, R. J.↗

NASA NTRS1994

Effects of Hydrogen Annealing, Sulfur Segregation and Diffusion on the Cyclic Oxidation Resistance of Superalloys: a Review

This review is based on the phenomenon of improved oxide scale adhesion for desulfurized superalloys. The proposed adhesion mechanism involves sulfur interfacial segregation and scale-metal bond weakening. Sulfur surface segregation on superalloys is examined as a function of temperature and sulfur content and related to classical behavior predicted by the McLean isotherm. Effective desulfurization to less than 1 ppmw can be accomplished by hydrogen annealing and is governed by sulfur diffusion kinetics in nickel. Hydrogen annealing results in excellent cyclic oxidation resistance for a number of advanced superalloys. The concept of a critical sulfur content is discussed in terms of practical annealing conditions and section thicknesses.

Smialek, J. L.↗

NASA NTRS1994

Effects of hydrogen annealing, sulfur segregation and diffusion on the cyclic oxidation resistance of superalloys: A review

This review is based on the phenomenon of improved oxide scale adhesion for desulfurized superalloys. The proposed adhesion mechanism involves sulfur interfacial segregation and scale-metal bond weakening. Sulfur surface segregation on superalloys is examined as a function of temperature and sulfur content, and is related to the classical behavior predicted by the McLean isotherm. Effective desulfurization to less than 1 ppmw can be accomplished by hydrogen annealing and is described by sulfur diffusion kinetics in nickel. Hydrogen annealing results in excellent cyclic oxidation resistance for a number of advanced superalloys. The concept of a critical sulfur content is discussed in terms of practical annealing conditions and section thicknesses.

Smialek, J. L.↗